• 한국정보디스플레이학회:학술대회논문집
• /
• 2007.08b
• /
• pp.1545-1546
• /
• 2007

Zinc gallate-based RGB phosphors and vertically aligned carbon nanotube emitters are prepared for flat field-emission lamp. The blend phosphors of blue $ZnGa_2O_4$, green $ZnGa_2O_4:Mn^{2+}$ and red $ZnGa_2O_4:Cr^{3+}$ are coated on the front glass, and the carbon nanotubes are chemically bonded on the rear ITO glass as a cathode.

• Transactions of the Korean Society of Machine Tool Engineers
• /
• v.16 no.6
• /
• pp.163-167
• /
• 2007

A field emission electron gun including 3 electrodes including one cathode and two anodes is very important for high resolution electron microscope. To have functions to control the initially-emitted electron beam, two anodes act as an electrostatic lens according to equipotential lines by adjusting the spot size, intensity, and working distance. To verify the action of the electron beam by the electrostatic lens by changing several parameters such as electrode shape, displacement and applied voltage to the electrodes, the two lenses were design and simulated and then their performances were analyzed with angular beam intensity(distribution), electrical optic axis variation and their stability.

• Proceedings of the KIPE Conference
• /
• 2007.07a
• /
• pp.359-361
• /
• 2007

본 논문은 CNT(Carbon Nano Tube) FEL(Field Emission Lamp)에서 애노드(Anode)-캐소드(Cathode) 구동용 고전압 구동 회로 구현에 관한 것이다. 본 논문에서 제안하는 고전압 DC 전원 회로는 턴비가 높은 고전압 트랜스포머의 Leakage 인덕턴스를 이용하는 Series-Resonant 형태의 Full Bridge 컨버터를 적용하고 고전압 트랜스포머와 Voltage Multiplier를 이용한다. 고전압 트랜스의 절연전압을 줄이기 위해서 두개의 트랜스포머와 Voltage Multiplier를 이용하여 애노드 전극에는 Positive 고전압, 캐소드 전극에는 Negative 고전압을 인가한다. 이 경우 애노드와 캐소드 사이의 아크 방전 시에도 구동 IC 및 스위칭 소자를 보호할 수 있는 장점이 있다.

• Journal of Electrical Engineering and Technology
• /
• v.3 no.2
• /
• pp.276-279
• /
• 2008

We report on the enhancement of cathode-luminescence in an $In_xGa_{1-x}N/In_yGa_{1-y}$ green light emitting diode structure using two-dimensional photonic crystals. The square lattice arrays of photonic crystals with diameter/periodicity of 200/500 nm were fabricated by electron beam lithography. Inductively coupled plasma dry etching was used to etch and define photonic crystals. Three samples with different etch depths, i.e., 170, 95, and 65 nm, were constructed. Field emission scanning electron microscope analysis shows that air holes of photonic crystal structure with inverted-cone shapes were fabricated after dry etching. Cathode-luminescence measurement indicated that up to 30-fold enhancement of cathode-luminescence intensity has been achieved.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.16 no.12S
• /
• pp.1248-1254
• /
• 2003

Carbon nanotubes(CNTs) are grown by using Co catalyst metal. CNTs fabricated by PECVD(plasma enhanced chemical vapor deposition) method are studied in terms of surface reaction and surface structure by TEM and Raman analysing method and ate analysed in its electrical field emission characteristics with variation of space between anode and cathode. Acetylene(C$_2$H$_2$) gas is used as the carbon source, while ammonia and hydrogen gas are used as catalyst and dilution gas. The CNTs grown by hydrogen(H$_2$) gas plasma indicates better vortical alignment, lower temperature process, and longer tip, compared to that grown by ammonia(NH$_3$) gas plasma. The CNTs fabricated with Co(cobalt) catalyst metal and PECVD method show the multiwall structure in mid-circle type in tip-end and the inner vacancy of 10nm. Emission properties of CNTs indicate the turn-on field to be 2.6 V/${\mu}{\textrm}{m}$ We suggest that CNTs can be possibly applied to the emitter tip of FEDs and high brightness flat lamp because of low temperature CNTs growth, low turn-on field.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.11a
• /
• pp.71-75
• /
• 2003

Carbon nanotubes(CNTs) are grown by using Co catalyst metal. CNTs fabricated by PECVD(plasma enhanced chemical vapor deposition) method are studied in terms of surface reaction and surface structure by TEM and Raman analysing method and are analysed in its electrical field emission characteristics with variation of space between anode and cathode. Acetylene($C_2H_2$) gas is used as the carbon source, while ammonia and hydrogen gas are used as catalyst and dilution gas. The CNTs grown by hydrogen($H_2$) gas plasma indicates better vertical alignment, lower temperature process and longer tip, compared to that grown by ammonia($NH_3$) gas plasma. The CNTs fabricated with Co(cobalt) catalyst metal and PECVD method show the multiwall structure in mid-circle type in tip-end and the inner vacancy of 10nm. Emission properties of CNTs indicate the turn-on field to be $2.6\;V/{\mu}m$. We suggest that CNTs can be possibly applied to the emitter tip of FEDs and high brightness flat lamp because of low temperature CNTs growth, low turn-on field.

• Journal of Information Display
• /
• v.2 no.4
• /
• pp.1-7
• /
• 2001

This paper investigates the characteristics of a newly developed high density hollow cathode plasma(HCP) system and its application for the etching of silicon wafers. We used $SF_6$ and $O_2$ gases in the HCP dry etch process. This paper demonstrates very high plasma density of $2{\times}10^{12}cm^{-3}$ at a discharge current of 20 rna, Silicon etch rate of 1.3 ${\mu}m$/min was achieved with $SF_6/O_2$ plasma conditions of total gas pressure of 50 mTorr, gas flow rate of 40 seem, and RF power of200W. This paper presents surface etching characteristics on a crystalline silicon wafer and large area cast type multicrystlline silicon wafer. We obtained field emitter tips size of less than 0.1 ${\mu}m$ without any photomask step as well as with a conventional photolithography. Our experimental results can be applied to various display systems such as thin film growth and etching for TFT-LCDs, emitter tip formations for FEDs, and bright plasma discharge for PDP applications. In this research, we studied silicon etching properties by using the hollow cathode plasma system.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2005.07b
• /
• pp.1530-1533
• /
• 2005

We investigated under-gate type carbon nanotube field emitter arrays (FEAs) for back light unit (BLU) in liquid crystal display (LCD). Gate oxide was formed by wet etching of ITO coated glass substrate instead of depositing $SiO_2$ on the glass substrate. Wet etching is easer and simpler than depositing and etching of thick gate oxide to isolate the gate metal from cathode electrode in triode. Field emission characteristic s of triode structure were measured. The maximum current density of 92.5 ${\mu}A/cm^2$ was when the gate and anode voltage was 95 and 2500 V, respectively at the anode-cathode spacing of 1500 ${\mu}m$.

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.61 no.7
• /
• pp.1001-1006
• /
• 2012

This paper presents a carbon nanotube (CNT) triode-structure field emitter as an ion source in a micro time-of-flight mass spectrometer(TOF-MS). In the ion source by field emission, the electrons emitted from cathodes under an electric field accelerated to the anode and ionize gas molecules by impact before arriving the anode. The generated positive ions are to be accelerated to the ion collector. Whereas most of ions are drawn to the cathodes in diode field emitters, a grid in the triode field emitter prevents the ions from being drawn to the cathodes. The triode field emitter is fabricated by micromachining. The cathode is composed of six CNT cylinders. The total size of the fabricated device is $8.0{\times}7.3{\times}1.9mm^3$. The anode and the grid current of the fabricated CNT field emitter were measured for various anode and grid voltages. When the anode and the grid voltages are 1000 V and 990 V, respectively, the emission current passing through the ionization region is 8.6 ${\mu}A$, which is a sufficient emission current for ionization and mass spectrometry.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2004.08a
• /
• pp.855-859
• /
• 2004

The Japanese National Project "Carbon Nanotube FED" is developing a high image-quality and low power-consumption field emission display (FED) by applying carbon nanotube (CNT) to the electron source. A uniform electron source with a flat-film CNTs and fine structure triodes Fir suppressing the deviation of emission is required. For realizing an FED panel, it is also necessary to develop the glass-bulb technologies for vacuum sealing, and display technologies for driving the panel by circuit electronic and for evaluating the picture quality by measuring. By achieving these technologies, an FED compatible with conventional Cathode Ray Tubes (CRTs) will be realized.