• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.389-390
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• 2008

We fabricated organic field-effect transistors (OFETs) based a fluorinated copper phthalocyanine ($F_{16}CuPc$) as an active layer. And we observed the surface morphology of the $F_{16}CuPc$ thin film. The $F_{16}CuPc$ thin film thickness was 40nm, and the channel length was $50{\mu}m$, channel width was 3mm. We observed the typical current-voltage (I-V) characteristics and capacitance-voltage (C-V) in $F_{16}CuPc$ FET and we calculated the effective mobility.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2008.10a
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• pp.619-621
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• 2008

Organic field-effect transistors (OFETs) are of interest for use in widely area electronic applications. We fabricated a copper phthalocyanine (CuPc) based field-effect transistor with different metal electrode. The CuPc FET device was made a top-contact type and the substrate temperature was room temperature. The source and drain electrodes were used an Au and Al materials. The CuPc thickness was 40nm, and the channel length was $50{\mu}m$, channel width was 3mm. We observed a typical current-voltage (I-V) characteristics in CuPc FET with different electrode materials.

• Proceedings of the SAREK Conference
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• 2008.06a
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• pp.459-462
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• 2008

The fact that the major cases of life casualties are from smoke in the fire accidents and the expected steep increase of skyscrapers, huge spaces, multiplexes and huge scaled underground spaces demand establishment of efficient smoke countermeasure. The architectural factors affecting the pressure field of building should be examined for the successful design and operation of smoke management system and the stack effect is one of the important factors. The field experiments on stack effect in stairwells of high-rise building with regard to open/close condition of door are carried out to evaluate the features of pressure applied to door between each compartments, i.e, stair, lobby and accommodation. The procedures and results of experiments are presented.

• Carbon letters
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• v.13 no.1
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• pp.17-22
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• 2012

Currently, graphene is a topic of very active research in fields from science to potential applications. For various radio-frequency (RF) circuit applications including low-noise amplifiers, the unique ambipolar nature of graphene field-effect transistors can be utilized for high-performance frequency multipliers, mixers and high-speed radiometers. Potential integration of graphene on Silicon substrates with complementary metal-oxide-semiconductor compatibility would also benefit future RF systems. The future success of the RF circuit applications depends on vertical and lateral scaling of graphene metal-oxide-semiconductor field-effect transistors to minimize parasitics and improve gate modulation efficiency in the channel. In this paper, we highlight recent progress in graphene materials, devices, and circuits for RF applications. For passive RF applications, we show its transparent electromagnetic shielding in Ku-band and transparent antenna, where its success depends on quality of materials. We also attempt to discuss future applications and challenges of graphene.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.506-507
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• 2008

Organic field-effect transistors (OFETs) are of interest for use in widely area electronic applications. We fabricated a copper phthalocyanine (CuPc) based field-effect transistor with different metal electrode. The CuPc FET made a top-contact type and the substrate temperature was room temperature. The source and drain electrodes were used an Au and Al materials. The CuPc thickness was 40nm, and the channel length was $50{\mu}m$, channel device was width was 3mm. We observed a typical current-voltage (I-V) characteristics in CuPc FET with different electrode materials.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.04b
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• pp.12-13
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• 2008

Organic field-effect transistors (OFETs) are of interest for use in widely area electronic applications. We fabricated a copper phthalocyanine (CuPc) based field-effect transistor with different metal electrode. The CuPc FET device was made a top-contact type and the substrate temperature was room temperature. The source and drain electrodes were used an Au and Al materials. The CuPc thickness was 40nm, and the channel length was $50{\mu}m$, channel width was 3mm. We observed a typical current-voltage (I-V) characteristics in CuPc FET with different electrode materials.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.494-495
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• 2007

Organic field-effect transistors (OFETs) are of interest for use in widely area electronic applications. We fabricated a copper phthalocyanine (CuPc) based field-effect transistor with different metal electrode. The CuPc FET device was made a top-contact type and the substrate temperature was room temperature. The source and drain electrodes were used an Au and Al materials. The CuPc thickness was 40nm, and the channel length was $50{\mu}m$, channel width was 3mm. We observed a typical current-voltage (I-V) characteristics in CuPc FET with different electrode materials.

• Proceedings of the KSME Conference
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• 2001.06e
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• pp.742-747
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• 2001

A study on the ultrasonic effect for turbulence enhancement is carried out in the horizontal flow field of a coaxial circular pipe. A large transparent acryl tank is made to perform several experiments for the above research. The front flow field from jet exit is divided as 4 measuring regions to observe characteristics of the above flow field according to those with and without ultrasonic. An ultrasonic transducer with 2MHz high frequency is used to give them the ultrasonic forcing. Characteristics such as the velocity distribution, the kinetic energy and the turbulence intensity are visualized, observed, examined and considered at Re No. 2000. In results, it is clarified that the ultrasonic increases the turbulence enhancement. And the optimum and harmonious intensity suited to the power of flow is needed to maximize the turbulence enhancement.

• Journal of Electrical Engineering and Technology
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• v.8 no.6
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• pp.1481-1486
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• 2013

In this paper, a new two dimensional (2D) analytical model of a Dual Material Gate tunnel field effect transistor (DMG TFET) is presented. The parabolic approximation technique is used to solve the 2-D Poisson equation with suitable boundary conditions. The simple and accurate analytical expressions for surface potential and electric field are derived. The electric field distribution can be used to calculate the tunneling generation rate and numerically extract tunneling current. The results show a significant improvement of on-current and reduction in short channel effects. Effectiveness of the proposed method has been confirmed by comparing the analytical results with the TCAD simulation results.

• The Journal of the Acoustical Society of Korea
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• v.15 no.1E
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• pp.39-44
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• 1996

Matched field localization schemes often show a high sensitivity to acoustic variabilities due to mismatch between assumed and actual environments. In this paper, we focus on the effect of source motion or Doppler on matched field processing (MEP). to accomplish this, MFP is extended to treat a moving source problem with normal mode description of the sound field. the extension involves both the temporally nonstationary and spatially inhomogeneous nature of the sound field generated by a time-harmonic point source moving uniformly in a stratified oceanic waveguide. It is demonstrated that the impact of source motion can be significant to MEP although the velocity of a moving source is much smaller than the sound velocity of the oceanic waveguide. In addition, a criteria for minimizing the effect of Doppler on MFP is discussed.