• 한국자기학회지
• /
• 제17권2호
• /
• pp.55-59
• /
• 2007

본 논문에서는 Co를 주성분으로 하는 아몰퍼스 자성 와이어를 동축케이블의 신호선으로 하는 자계센서를 제작하여 외부자계에 대한 특성을 측정하였다. 측정된 임피던스의 주파수의존성에는 전송선로의 공진특성이 반영되었으며 인가자계가 없을 때, 1/4 파장에 해당하는 주파수가 250 MHz에서 나타났다. 측정 주파수대역에서는 표피효과에 의한 저항성분이 임피던스를 거의 결정하였으며 또한 외부자계가 $0\;Oe{\sim}1\;Oe$ 사이에서 임피던스는 자성 아몰퍼스와이어의 투자율의 변화에 의해 크게 변화하였다. 0.1 Oe 부근에서 150 MHz의 ${\Delta}Z/{\Delta}H$가 $300{\Omega}/Oe$이라는 매우 큰 값이 얻어져 Co를 주성분으로 하는 자성와이어를 동축케이블형 자계센서로 사용하는 경우 센서로서 매우 유용함을 알 수 있었다.

• 한국세라믹학회지
• /
• 제52권1호
• /
• pp.77-82
• /
• 2015

The effect of the electrode type on the dielectric and piezoelectric properties of $Pb(Mg_{1/3}Nb_{2/3})O_3-PbZrO_3-PbTiO_3$ (PMN-PZT) single crystals was investigated in an effort to improve their properties for various piezoelectric applications. First, three different types of PMN-PZT single crystals [PMN-PZT-A (piezoelectrically soft type; dielectric constant ~ 10,000), PMN-PZT-B (piezoelectrically soft type; phase-transition temperature between the rhombohedral and tetragonal phases ($T_{RT}$) ~ $145^{\circ}C$), PMN-PZT-C (piezoelectrically hard type; high mechanical quality factor ($Q_m$) ~ 1,000)] were fabricated using the solid-state single crystal growth (SSCG) method. Then, four different types of electrodes [sputtered Au, sputtered Cr/Au, sputtered Ti/Au, and fired Ag] were formed on the single crystals, and their dielectric and piezoelectric properties were measured. The single crystals with a sputtered Ti/Au electrode showed the highest dielectric and piezoelectric constants but the lowest coercive electric field ($E_C$). The single crystals with a fired Ag electrode showed the lowest dielectric and piezoelectric constants but the highest coercive electric field ($E_C$). This dependence on the type of electrode was most significant in the piezoelectrically hard PMN-PZT-C single crystals. However, the effects of the electrode type on the phase transition temperatures ($T_C$, $T_{RT}$) and dielectric loss were negligible. These results clearly demonstrate that it is important to select an appropriate electrode so as to maximize the dielectric and piezoelectric properties of single crystals in each type of piezoelectric application.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
• /
• pp.226-229
• /
• 2004

A stoichiometric mixture of evaporating materials for $CuAlSe_2$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $CuAlSe_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $680^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuAlSe_2$ single crystal thin films measured with Hall effect by van der Pauw method are $9.24{\times}10^{16}\;cm^{-3}$ and $295\;cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuAlSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;2.8382\;eV\;-\;(8.68{\times}10^{-4}\;eV/K)T^2/(T+155K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $CuAlSe_2$ have been estimated to be 0.2026 eV and 0.2165 eV at 10K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $CuAlSe_2$. The three photocurrent peaks observed at 10K are ascribed to the $A_1-$, $B_1-$, and $C_1$-exciton peaks for n = 1.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
• /
• pp.40-40
• /
• 2008

$InGaZnO_4$ based thin film transistors (TFTs) are of interest for large area and low cost electronics. The TFTs have strong potential for application in flat panel displays and portable electronics due to their high field effect mobility, high on/off current ratios, and high optical transparency. The application of such room temperature processed transistors, however, is often limited by the operation voltage and long-tenn stability. Therefore, attaining an optimum thickness is necessary. We investigated the thickness dependence of a room temperature grown $MgO_{0.3}BST_{0.7}$ composite gate dielectric and an $InGaZnO_4$ (IGZO) active semiconductor on the electrical characteristics of thin film transistors fabricated on a polyethylene terephthalate (PET) substrate. The TFT characteristics were changed markedly with variation of the gate dielectric and semiconductor thickness. The optimum gate dielectric and active semiconductor thickness were 300 nm and 30 nm, respectively. The TFT showed low operating voltage of less than 4 V, field effect mobility of 21.34 cm2/$V{\cdot}s$, an on/off ratio of $8.27\times10^6$, threshold voltage of 2.2 V, and a subthreshold swing of 0.42 V/dec.

• 천문학회보
• /
• 제37권1호
• /
• pp.95.2-95.2
• /
• 2012

We have compared the geoeffective parameters of halo coronal mass ejections (CMEs) to predict geomagnetic storms. For this we consider 50 front-side full halo CMEs whose asymmetric cone model parameters and earthward direction parameter were available. For each CME we use its projected velocity (Vp), radial velocity (Vr), angle between cone axis and sky plane (${\gamma}$) from the cone model, earthward direction parameter (D), source longitude (L), and magnetic field orientation (M) of the CME source region. We make a simple and multiple linear regression analysis to find out the relationship between CME parameters and Dst index. Major results are as follows. (1) $Vr{\times}{\gamma}$ has a higher correlation coefficient (cc = 0.70) with the Dst index than the others. When we make a multiple regression of Dst and two parameters ($Vr{\times}{\gamma}$, D), the correlation coefficient increases from 0.70 to 0.77. (2) Correlation coefficients between Dst index and $Vr{\times}{\gamma}$ have different values depending on M and L. (3) Super geomagnetic storms (Dst ${\leq}$ -200 nT) only appear in the western and southward events. Our results demonstrate that not only the cone model parameters together with the earthward direction parameter improve the relationship between CME parameters and Dst index but also the source longitude and its magnetic field orientation play a significant role in predicting geomagnetic storms.

• 한국추진공학회:학술대회논문집
• /
• 한국추진공학회 2007년도 제29회 추계학술대회논문집
• /
• pp.263-266
• /
• 2007

Ballistic Range는 오래전부터 짧은 시간에 극도의 고압상태를 만들어낼 수 있기 때문에 고속 충격역학, 발사체 공기역학, 새로운 재료의 생성과 같은 다양한 공학 분야에서 사용되어왔다. 2단 경 가스총은 가장 넓게 사용되어지고 있다. 현재의 실험적 연구는 발사체 가상실험을 쉽게 수행할 수 있는 새로운 타입의 Ballistic Range를 개발하기위해 진행되어져왔다. 실험은 발사체 속도의 다양한 변수들의 의존성을 찾기 위해 수행되었다. 다양한 발차에 속도를 얻기 위해 고압실압력, 격막파열압력, 발사체와 피스톤 질량에 변화를 주었다. 또한 발사되는 발사체 주변의 유동을 알아보기 위해 유동장을 가시화하였다.

• 한국전자파학회논문지
• /
• 제11권3호
• /
• pp.454-463
• /
• 2000

와이어 안테나의 대역폭 향상을 위해 기존의 선형적인 기하학적 구조를 변경시키는 방법을 제안하였다. 그 구조 합성은 이차원적으로 이루어지며, 원거리 boresight 전장의 주파수 의존성을 최소화시키는데 그 기본을 두고 있다. 안테나상의 전류분포는 펄스함수를 이용한 Galerkin법을 사용하여 계산하였다. 안테나 끝부분에서의 반사파에 의해 와이어상에 정재파가 존재하여 광대역화에 한계가 있으므로, 이 영향을 줄이기 위해 합성된 안테 나 끝부분에 저항을 적절히 분포시켰다. 그 결과 10:1 대역폭에서 전력이득이 $6.5\pm1.1$dBi, 정재파비가 2 이하인 평탄한 특성을 만족시킬 수 있었다. 종래의 선형 v-다이폴의 성능과 비교. 분석함으로써 제시한 방법의 타당성을 보였다.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 반도체 재료 센서 박막재료 전자세라믹스
• /
• pp.56-59
• /
• 2004

The stochiometric composition of $AgGaS_2$ polycrystal source materials for the $AgGaS_2/GaAs$ epilayer was prepared from horizontal furnace. From the extrapolation method of X-ray diffraction patterns it was found that the polycrystal $AgGaS_2$ has tetragonal structure of which lattice constant $a_0$ and $c_0$ were 5.756 ${\AA}$ and 10.305 ${\AA}$, respectively. $AgGaS_2/GaAs$ epilayer was deposited on throughly etched GaAs (100) substrate from mixed crystal $AgGaS_2$ by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $590^{\circ}C$ and $440^{\circ}C$ respectively. The crystallinity of the grown $AgGaS_2/GaAs$ epilayer was investigated by the DCRC (double crystal X-ray diffraction rocking curve). The optical energy gaps were found to be 2.61 eV for $AgGaS_2/GaAs$ epilayer at room temperature. The temperature dependence of the photocurrent peak energy is well explained by the Varshni equation, then the constants in the Varshni equation are given by ${\alpha}=8.695{\times}10^{-4}eV/K$, and $\beta$=332 K. From the photocurrent spectra by illumination of polarized light of the $AgGaS_2/GaAs$ epilayer, we have found that crystal field splitting $\Delta$ Cr was 0.28 eV at 20 K. From the PL spectra at 20 K, the peaks corresponding to free and bound excitons and a broad emission band due to D-A pairs are identified. The binding energy of the free excitons are determined to be 0.2676 eV and 0.2430 eV and the dissociation energy of the bound excitons to be 0.4695 eV.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2010년도 제39회 하계학술대회 초록집
• /
• pp.74-74
• /
• 2010

The aqua-plasma is the non-thermal plasma in electrical conductive electrolyte by generates the vapor film layer on the immersed metal electrode surface. This plasma can generate the hydroxyl radical by dissociate the water molecule with the plasma electron. To develop the plasma discharge device for high efficiency in the hydroxyl radical generation, proper model for estimation of plasma power is necessary. In this work, the 1-D spherical model was developed, considering temperature dependence material constants. The relation between the plasma power and hydroxyl generation was also studied by the comparison between the optical emission intensity from the hydroxyl radical using monochromator and estimated plasma power. First, the thickness of vapor layer thickness was estimated using the Navier-Stokes fluid equation in order to calculate the discharge E-field inside vapor layer. Using the E-field magnitude and power balance on the plasma generation, it was possible to estimate the plasma power. The plasma power was assumed to uniformly fill the vapor layer and the temperature of vapor layer was fixed in the boiling temperature of electrolyte, 375K. In the experiment, the aqua-plasma was discharged in the saline by applied the voltage on the bipolar electrode. The range of applied voltage was 234 to 280V-rms in the frequency of 380 kHz. Two type electrodes were produced with two ${\Phi}0.2$ tungsten. The plasma power was estimated from the V-I signal from the two high voltage probes and current probe. The estimated plasma power agreed with the profile of emission intensity when the plasma discharged between the metal electrode and vapor layer surface. However, when the plasma discharged between the metal electrodes, the increasing rate of emission intensity was lower than the increase of plasma power. It implies that the surface reaction is more sufficient rather than the volume reaction in the radical generation, due to the high density of water molecule in the liquid.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
• /
• pp.282-285
• /
• 2003

Single crystal $CuAlSe_2$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at $410\;^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $CuAlSe_2$ source at $680\;^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $CuAlSe_2$ thin films measured with Hall effect by van der Pauw method are $9.24{\times}10^{16}\;cm^{-3}\;and\;295\;cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuAlSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;2.8382\;eV\;-\;(8.68\;{\times}\;10^{-4}eV/K)T^2/(T\;+\;155\;K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $CuAlSe_2$ have been estimated to be 0.2026 eV and 0.2165 eV at 10 K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the $\Delta$so definitely exists in the ${\Gamma}_5$ states of the valence band of the $CuAlSe_2$. The three photocurrent peaks observed at 10 K are ascribed to the $A_1-$, $B_1-$, and $C_1$-exciton peaks for n = 1.