• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.5
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• pp.486-492
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• 1999

The purpose of this research was to find out what is the dominant factor determining the $H_{ex}$ and the $H_C$ of Mn-Ir/Ni-Fe multilayers with different buffer layers. Regardless of (111) texture of Mn-Ir layer, all samples showed over the $H_{ex}$ of 155 Oe. We found out the $H_{ex}$ and the $H_C$ of Mn-Ir/Ni-Fe multilayers depend on interface morphology and grain size of Mn-Ir layer at the interface between Mn-Ir and Ni-Fe layers. The dependence of magnetroesistance ratio and coupling field on the thickness of ferromagnetic layer, thickness of Cu layer and different buffer layers have been studied. Maximum magnetoresistance ratio appeared for the sample Ta(5 nm)/Mn-Ir(10 nm)/Ni-Fe(7.5 nm)/Cu(2 nm)/Ni-Fe(6 nm)/Ta(5 nm)/Si. Magnetoresistance ratio may be related to grain of ferromagnetic layer. Coupling field may be related to the roughness and the grain size of ferromagnetic layer in the spin-valve multilayers.

• Journal of the Semiconductor & Display Technology
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• v.18 no.3
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• pp.77-81
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• 2019

Recently, Korea has been making efforts at the government level to overcome the national crisis that Japan's dependency on technology in the semiconductor and display materials sectors has also escaped due to export regulations on three materials carried out by Japan. Therefore, based on the data of the National Science & Technology Information Service (NTIS) operated by the government, we analyze the trend of R & D investment in the display field, thereby improving R & D to improve material technology competitiveness in the future. Let's examine the implications of investment. A total of 5 years of new research and development investment in the field of display was invested as basic research fund for 25%, 15% for applied research, and 53% for development research. In terms of development cost and development period, the basic research showed that the amount of money and the development period were shorter than that of applied research. In other words, the basic research accounted for 25% of the R & D investment and the average R & D period was only 3.2 years. As we can see from the recent development of H fiber carbon fiber, which was recently developed and entered full-scale production, we were able to succeed because of the benefits of government support for 10 years while giving the same material title differently. In order to escape from Japan's technological dependence on semiconductor and display materials in Korea, As such, basic research in the field of materials is only possible when long-term research is conducted.

• Journal of the Korean Magnetics Society
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• v.27 no.3
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• pp.77-81
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• 2017

The rotatable anisotropy effect was observed in the ferromagnetic resonance measurement in exchange coupled ferromagnetic/antiferromagnetic thin films and it was due to rotation of antiferromagnetic layer by the exchange coupling energy. We analyzed the CoFe thickness dependence of rotatable anisotropy field and ferromagnetic resonance linewidth in exchange coupled $CoFe(t_F)/MnIr(2.5nm)$ thin films. The rotatable anisotropy field was inversely propositional to the CoFe thickness and it was well fitted by the rotatable anisotropy energy of $0.96erg/cm^2$. The ferromagnetic resonance linewidth were linearly propositional to the rotatable anisotropy field in $t_F$ < 50 nm, while it was more dominated by the eddy current effect in $t_F$ > 50 nm.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.5
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• pp.319-325
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• 1999

Direct current(d.c.)leakage current voltage characteristics of radio-frequencymagnetron sputtered BaTa\sub 2\O\sub 6\ film capacitors with aluminum(A1) top and indium tin oxide (ITO) bottom electrodes have been investigatedas a function of applied field and temperature. In order to study surfacetreatment effect on the electrical characteristics of as-deposited film weperformed exposure of oxygen plasma on $BaTa_2O_6$ surface. d. c.current-voltage (I-V), bipolar pulse charge-voltage (Q-V), d. c. current-time (I-t) andcapacitance-frequency (C-f) analysis were performed on films. All ofthe films exhibita low leakage current, a high breakdown field strength (3MV/cm-4.5MV/cm), and high dielectric constant (20-30). From the temperature dependence of leakage current,we can conclude that the dominant conduction mechanism is ascribed toSchottky emission at high electric field (>1MV/cm) and hopping conduction at lowelectric field (<1MV/cm). According to our results, the oxide plasma surfacetreatmenton as-deposited $BaTa_2O_6$ resulted in lowering interfacebarrier height and thus, leakage current when a negative voltage applied to the A1 electrode. This can be explained by reduction of surface contamination via etching surface and filling defects such as oxygen vacancies.

• Progress in Medical Physics
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• v.11 no.1
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• pp.1-18
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• 2000

For wedged photon beams, the variation of the wedge factor with field size was reported by several authors. However, until now such variation with field size had not been explained quantitatively. Therefore, the variation of the wedge factor was investigated by measuring outputs with field sizes increasing from 4 cm $\times$ 4 cm to 25 cm $\times$ 25 cm for open and wedged 6 and 10MV X-ray beams. The relative outputs for wedged fields to 10 cm $\times$ 10 cm have been obtained. The results show the Increase of the wedge factor caused by the change in fluence of high energy Photon beam with field size, up to 8.0% for KD77-6MV X-ray beam. This increase could be explained as a linear function of the irradiated wedge volume except small field size up to about 10 cm. In the cases of the narrow rectangular beam parallel to the wedge direction, the wedge factor decreases slightly with increasing field size up to about 10-15 cm due to a relatively reduced photon fluence from the change of the wedge thickness. We could explain the causes of a wedge factor variation with field size as the fluences of primary photon passed throughout the wedge, contributing to the dose at the central beam axis and that the fluences were affected by the gradient of the wedge with the change of field size. For clinical use, the formula developed to describe the wedge factor variation with field size has been corrected.

• Progress in Medical Physics
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• v.18 no.1
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• pp.48-54
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• 2007

This study is to develope a phantom for MOSFET (Metal Oxide Semiconductors Field Effect Transistors) dosimetry and compare the dosimetric properties of standard MOSFET and microMOSFET with the phantom. In this study, the developed phantom have two shape: one is the shape of semi-sphere with 10cm diameters and the other one is the flat slab of $30{\times}30cm$with 1 cm thickness. The slab phantom was used for calibration and characterization measurements of reproducibility, linearity and dose rate dependency. The semi-sphere phantom was used for angular and directional dependence on the types of MOSFETs. The measurements were conducted under $10{\times}10cm^2$ fields at 100cm SSD with 6MV photon of Clinac (21EX, Varian, USA). For calibration and reproducibility, five standard MOSFETS and microMOSFETs were repeatedly Irradiated by 200cGy five times. The average calibration factor was a range of $1.09{\pm}0.01{\sim}1.12{\pm}0.02mV/cGy$ for standard MOSFETS and $2.81{\pm}0.03{\sim}2.85{\pm}0.04 mV/cGy$ for microMOSFETs. The response of reproducibility in the two types of MOSFETS was found to be maximum 2% variation. Dose linearity was evaluated In the range of 5 to 600 cGy and showed good linear response with $R^2$ value of 0.997 and 0.999. The dose rate dependence of standard MOSFET and microMOSFET was within 1% for 200 cGy from 100 to 500MU/min. For linearity, reproducibility and calibration factor, two types of MOSFETS showed similar results. On the other hand, the standard MOSFET and microMOSFET were found to be remarkable difference in angular and directional dependence. The measured angular dependence of standard MOSFET and microMOSFET was also found to be the variation of 13%, 10% and standard deviation of ${\pm}4.4%,\;{\pm}2.1%$. The directional dependence was found to be the variation of 5%, 2% and standard deviation of ${\pm}2.1%,\;{\pm}1.5%$. Therefore, dose verification of radiation therapy used multidirectional X-ray beam treatments allows for better the use of microMOSFET which has a reduced angular and directional dependence than that of standard MOSFET.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 2002.10b
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• pp.197-198
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• 2002

In order to produce micromachined parts with a great dimensional accuracy, it is important to clarify the influence of heterogeneity and/or discontinuity of workpiece materials on the micromachining process, because almost all structural materials are composed of heterogeneous and/or homogeneous crystal grains at the micro scale. Experiments where JIS S25C steel had been scratched with a diamond triangular pyramid indenter were conducted under a field emission scanning electron microscope (FE-SEM). The difference of plastic deformation at a groove scratched between a pearlite zone and a proeutectoid ferrite zone was investigated through comparison with the groove scratched of a pearlite zone and a proeutectoid ferrite zone.

• 한국연소학회:학술대회논문집
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• 2004.11a
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• pp.91-96
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• 2004

Simultaneous CH and OH planar laser induced fluorescence(PLIF) and stereoscopic particle image velocimetry (PIV) measurements have been developed to investigate the local flame structure of turbulent premixed flames. The developed simultaneous two radical concentrations and three component velocity measurements on a two-dimensional plane was applied for relatively high Reynolds number turbulent premixed flames in a swirl stabilized combustor. All measurements were conducted for methane-air premixed flames in the corrugated flamelets regime. Strong three-dimensional fluctuation implies that misunderstanding of the flame/turbulent interactions would be caused by the analysis of two-component velocity distribution in a cross section. Furthermore, comparisons of CH-OH PLIF and three-component velocity field show that the burned gases not always have high-speed velocity in relatively high Reynolds number turbulent premixed flame. The Reynolds number dependence of the flame front was clearly captured by the simultaneous CH-OH PLIF and stereoscopic PIV measurements.

• Journal of Sensor Science and Technology
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• v.15 no.2
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• pp.102-105
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• 2006

In-vivo dosimetry is an essential tool of quality assurance programs in radiotherapy. The most commonly used techniques to verify dose are thermoluminescence dosimeter (TLD) and diode detectors. Metal oxide semiconductor field-effect transistor (MOSFET) has been recently proposed for using in radiation therapy with many advantages. The reproducibility, linearity, isotropy, dose rate dependence of the MOSFET dosimeter were studied and its availability was verified. Consequently the results can be used to improve therapeutic planning procedure and minimize treatment errors in radiotherapy.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.62-62
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• 2009

Electrical properties of SGS-TFT with 5/5 ${\mu}m$ channel width and length which gate insulator is made of 20nm $SiO_2$ and 80nm $SiN_x$ was fabricated and measured at various temperatures. The field-effect mobility was decreased from 86.25 to 80.42 $cm^2/Vs$ and threshold voltage also decreased from -1.5792 to -1.0492 V, when temperature is increased from room temperature to $100^{\circ}C$. Subthreshold swing, also, increased from 0.3212 to 0.4818 V/dec and $I_{on/off}$ ratio decreased from $5.05{\times}10^7$ to $6.93{\times}10^5$.