• 한국재료학회지
• /
• 제17권3호
• /
• pp.173-178
• /
• 2007

Carbon nanotube cathodes(CNT cathodes) with a trench structure similar to gated structure of triode-type cathode were fabricated by a screen printing method using multi-walled carbon nanotubes. The effects of surface treatments on CNT cathodes were investigated for high efficiency field emission displays(FEDs). A liquid method easily removed the organic residue and protruded the CNTs. Field emission properties were measured by using a diode-type mode. The liquid method produced a turn-on field of $1.4V/{\mu}m$. The emission current density was measured about $3.1mA/cm^{2}$ at the electric field of $3V/{\mu}m$. The liquid method showed a high potential applicable to the surface treatment for triode-type FEDs.

• 한국재료학회지
• /
• 제18권5호
• /
• pp.277-282
• /
• 2008

The effects of the field emission property in relation to the surface morphology and adhesion force were investigated. The single-wall-nanotube-based cathode was obtained by use of an in-situ arc discharge synthesis method, a screen-printing method and a spray method. The morphologies of the formed emitter layers were very different. The emission stability and uniformity were dramatically improved by employing an in-situ arc discharge synthesis method. In this study, it was confirmed that the current stability and uniformity of the field emission of the cathode depend on the surface morphology and adhesion force of the emitters. The current stability of the field emission device was also studied through an electrical aging process by varying the current and electric field.

• Bulletin of the Korean Chemical Society
• /
• 제27권10호
• /
• pp.1651-1654
• /
• 2006

Field emission (FE) currents were measured for silver-pasted and glass-pasted single-walled carbon nanotubes (SWNTs) after illuminating the tubes with a pulsed 532 nm laser. A very low turn-on field of approximately 0.4 V/m m and a high current density ~1700 $\mu A/cm^2$ at 3.5 V/m m was obtained for the silver-pasted SWNTs after laser irradiation but on the whole, no improvements were found for the glass-pasted SWNTs. Two roles of laser irradiation for the silver-pasted SWNTs were proposed. First, the embedded SWNTs and SWNT bundles inside the silver paste were immerged on the outer surface due to an instantaneous melting or annealing of the silver metals by the laser resulting in an increase of the field emission sites. Second, the laser irradiation was thought to improve the electrical contact between SWNTs and the silver metal by reducing the contact resistance via laser-induced thermal annealing, which was responsible for increasing the FE currents.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
• /
• pp.775-777
• /
• 2007

Field emission properties of expanded graphite composite have been studied. Composite has been synthesized via shear mixing expanded graphite in ${\alpha}-terpineol$ and ethyl cellulose. Field emission properties, of screen printed composite has been measured at a static applied electric field. The details of the analysis have been presented.

• Applied Microscopy
• /
• 제46권4호
• /
• pp.227-237
• /
• 2016

This investigation deals with the process of field electron emission from composite microemitters. Tested emitters consisted of a tungsten or carbon-fiber core, coated with a dielectric material. Two coating materials were used: (1) Clark Electromedical Instruments Epoxylite resin and (2) Epidian 6 Epoxy resin (based on bisphenol A). Various properties of these emitters were measured, including the current-voltage characteristics, which are presented as Fowler-Nordheim plots, and the corresponding electron emission images. A field electron microscope with a tip (cathode) to screen (anode) distance of 10 mm was used to electrically characterize the emitters. Measurements were carried out under ultra-high vacuum conditions with a base pressure of $10^{-6}$ Pascal ($10^{-8}$ mbar).

• Applied Microscopy
• /
• 제46권4호
• /
• pp.244-252
• /
• 2016

This paper describes a new design of carbon nanotube tip. $Nanocly^{TM}$ NC 7000 Thin Multiwall Carbon Nanotubes of carbon purity (90%) and average diameter tube 9.5 nm with a high aspect-ratio (>150) were used. These tips were manufactured by employing a drawing technique using a glass puller. The glass microemitters with internal carbon nanotubes show a switch-on effect to a high current level (1 to $20{\mu}A$). A field electron microscope with a tip (cathode)-screen (anode) separation at ~10 mm was used to characterize the electron emitters. The system was evacuated down to a base pressure of ${\sim}10^{-9}$ mbar when baked at up to ${\sim}200^{\circ}C$ overnight. This allowed measurements of typical Field Electron Emission characteristics; namely the current-voltage (I-V) characteristics and the emission images on a conductive phosphorus screen (the anode). Fowler-Nordheim plots of the current-voltage characteristics show current switch-on for each of these emitters.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
• /
• pp.353-353
• /
• 2008

Carbon nanotubes (CNTs) are attractive for field emitter because of their outstanding electrical, mechanical, and chemical properties. Several applications using CNTs as field emitters have been demonstrated such as field emission display (FED), backlight unit (BLU), and X-ray source. In this study, we fabricated a CNT cathode using transparent ultra-thin CNT film. First, CNT aqueous solution was prepared by ultrasonically dispersing purified single-walled carbon nanotubes (SWCNTs) in deionized water with sodium dodecyl sulfate (SDS). To obtain the CNT film, the CNT solution in a milliliter or even several tens of micro-litters was deposited onto a porous alumina membrane through vacuum filtration process. Thereafter, the alumina membrane was solvated by the 3 M NaOH solution and the floating CNT film was easily transferred to an indium-tin-oxide (ITO) glass substrate of $0.5\times0.5cm^2$ with a film mask. The transmittance of as-prepared ultra-thin CNT films measured by UV-Vis spectrophotometer was 68~97%, depending on the amount of CNTs dispersed in an aqueous solution. Roller activation, which is a essential process to improve the field emission characteristics of CNT films, increased the UV-Vis transmittance up to 93~98%. This study presents SEM morphology of CNT emitters and their field emission properties according to the concentration of CNTs in an aqueous solutions. Since the ultra-thin CNT emitters prepared from the solutions show a high peak current density of field emission comparable to that of the paste-base CNT emitters and do not contain outgassing sources such as organic binders, they are considered to be very promising for small-size-but-high-end applications including X-ray sources and microwave power amplifiers.

• JSTS:Journal of Semiconductor Technology and Science
• /
• 제2권2호
• /
• pp.93-101
• /
• 2002

We have proposed and fabricated two lateral type field emission diodes, poly-Si emitter by utilizing the local oxidation of silicon (LOCOS) and GaN emitter using metal organic chemical vapor deposition (MOCVD) process. The fabricated poly-Si diode exhibited excellent electrical characteristics such as a very low turn-on voltage of 2 V and a high emission current of $300{\;}\bu\textrm{A}/tip$ at the anode-to-cathode voltage of 25 V. These superior field emission characteristics was speculated as a result of strong surface modification inducing a quasi-negative electron affinity and the increase of emitting sites due to local sharp protrusions by an appropriate activation treatment. In respect, two kinds of procedures were proposed for the fabrication of the lateral type GaN emitter: a selective etching method with electron cyclotron resonance-reactive ion etching (ECR-RIE) or a simple selective growth by utilizing $Si_3N_4$ film as a masking layer. The fabricated device using the ECR-RIE exhibited electrical characteristics such as a turn-on voltage of 35 V for $7\bu\textrm{m}$ gap and an emission current of~580 nA/l0tips at anode-to-cathode voltage of 100 V. These new field emission characteristics of GaN tips are believed to be due to a low electron affinity as well as the shorter inter-electrode distance. Compared to lateral type GaN field emission diode using ECR-RIE, re-grown GaN emitters shows sharper shape tips and shorter inter-electrode distance.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
• /
• pp.154-154
• /
• 2008

Although the screen printing technology using photosensitive carbon nanotube (CNT) paste has many advantages such as low cost, simple process, uniform emission, and capability of mass production, the CNT paste needs to be improved further in CNT dispersion, printability, adhesion, electrical conductivity, population of CNT emitters, etc. Ball milling has been frequently employed to prepare the CNT paste as ball milling can mix its ingredients very well and easily cut the long, entangled CNTs. This study carried out a parametric approach to fabricating the CNT paste in terms of low-energy ball milling and a paste composition. Field emission properties of the CNT paste was characterized with CNT dispersion and electrical conductivity which were measured by a UV-Vis spectrophotometer and a 4-point probe method, respectively. Main variables in formulating the CNT paste include a length of milling time, and amounts of CNTs and conductive inorganic fillers. In particular, we varied not only the contents of conductive fillers but also used two different sizes of filler particles of ${\mu}m$ and nm ranges. Among many variations of conductive fillers, the best field emission characteristics occurred at the 5 wt% fillers with the mixing ratio of 3:1 for ${\mu}m$-and nm-sizes. The amount and size of fillers has a great effect on the morphology, processing stability, and field emission characteristics of CNT emitter dots. The addition a small amount of nm-size fillers considerably improved the field emission characteristics of the photosensitive CNT paste.

• 한국진공학회지
• /
• 제9권2호
• /
• pp.122-129
• /
• 2000

Mo이 코팅된 유리기판 상에 전기영동법으로 도포된 유리화 비정형 탄소분말의 전계방출 특성을 조사하였다. 탄소의 $sp^2$결합만으로 이루어진 유리화 비정형 탄소는 전계방출을 얻기 위한 초기화 공정 없이도 규칙적인 전계방출 거동을 보이고 있었다. 전자의 방출이 시작되는 임계전장의 크기는 3에서 4 MV/m 구간의 값을 가지고 있었으며, Fowler-Nordheim plot로부터 평가된 effective work function은 약 0.06 eV였다. 전류전압거동의 반복측정에 의해 관찰된 바와 같이 전계방출의 안정성 면에서 유리화 비정형 탄소는 Si tip보다 우수하였으며, 도포된 전체면적에서 전면발광의 가능성을 확인할 수 있었다. 이러한 결과는 탄소계 물질에서 관찰되는 전계방출이 탄소의 $sp^3$결합과 밀접하게 관련되어 있지 않으며, 전자가음극물질의 표면으로 이동하는데 필요한 전기전도성, 혹은 기판과 음극물질 계면에서의 전자이동 등이 전계방출의 거동을 결정하는 중요한 요인임을 보여주고 있다.