• 대한교통학회지
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• 제26권4호
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• pp.251-264
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• 2008

정확하고 신뢰성 있는 실시간 교통자료의 수집은 다양한 교통운영관리 전략의 구현 및 교통정보제공을 위한 필수요소이다. 본 연구에서는 보다 seamless한 고급 교통정보가공을 위해 차량 간 무선통신기술(Vehicle-To-Vehicle Communication; V2V)을 활용한 새로운 교통정보수집체계를 제안하였다. GPS를 이용하여 개별차량의 주행궤적을 추출하고 V2V를 이용한 교통정보수집 방안을 제시하였다. 본 연구에서 제안한 교통정보수집체계의 기술적 요구사항분석을 위해 몬테카를로 시뮬레이션 기반의 평가체계를 개발하였다. 미시적 교통시뮬레이터 AIMSUN으로부터 개별차량의 주행궤적을 추출하고, 이를 이용한 구간통행시간 산출기법을 몬테카를로 시뮬레이션 기반 평가체계에 결합하여 기술적 요구사항을 도출하였다. 구간통행시간 정확도에 영향을 미치는 요인으로서 V2V 및 개별차량 주행궤적 추출이 가능한 equipped vehicle의 market penetration rate, V2V 통신반경, 통행시간 산출주기를 분석하였다. 또한, 제안된 시스템의 기술적 타당성 확인을 위해 prototypical implementation을 수행하였다. 본 연구의 결과물은 보다 seamless하고 정확한 교통정보가공을 위한 차세대 수집시스템 개발 및 구현을 위한 유용한 기초자료로 활용될 것으로 기대된다.

• 한국분무공학회지
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• 제1권2호
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• pp.16-23
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• 1996

In case of a high-speed D.I. diesel engine. the injected fuel spray is unavoidable that the impinging on the wall of piston cavity and in this case the geometry of piston cavity has a great influence on the atomization structure and air flow fields. In the field of combustion and in many other spray applications, there are clear evidence of correlation between spray structure and emission of pollutants. Ordinary, the combustion chamber of driving engine have unsteady turbulent flow be attendant on such as the change of temperature, velocity and pressure. So the analysis of spray behavior is difficult. In this study, a single spray was impinged on each cavity wall at indicated angle in a quiescent atmosphere at room temperature and pressure, as being the simplest case, and 3 types of piston cavity such as Dish, Toroidal and Re-entrant type was tested for analyzing the influence of cavity geometry. And hot wire probe was used for analyze non-steady flow characteristics of impinging spray, and to investigate the behavior of spray, the aspects of concentration c(t), standard deviation $\sigma(t)$ and variation factor (v.f.) was measured with the lapse of time.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.137-137
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• 2009

Thin-film transistors (TFTs) that can be prepared at low temperatures have attracted much attention due to the great potential for flexible electronics. One of the mainstreams in this field is the use of organic semiconductors such as pentacene. But device performance of the organic TFTs is still limited by low field effect mobility or rapidly degraded after exposing to air in many cases. Another approach is amorphous oxide semiconductors. Amorphous oxide semiconductors (AOSs) have exactly attracted considerable attention because AOSs were fabricated at room temperature and used lots of application such as flexible display, electronic paper, large solar cells. Among the various AOSs, a-IGZO was considerable material because it has high mobility and uniform surface and good transparent. The high mobility is attributed to the result of the overlap of spherical s-orbital of the heavy pest-transition metal cations. This study is demonstrated the effect of thickness channel layer from 30nm to 200nm. when the thickness was increased, turn on voltage and subthreshold swing were decreased. a-IGZO TFTs have used a shadow mask to deposit channel and source/drain(S/D). a-IGZO were deposited on SiO2 wafer by rf magnetron sputtering. using power is 150W, working pressure is 3m Torr, and an O2/Ar(2/28 SCCM) atmosphere at room temperature. The electrodes were formed with Electron-beam evaporated Ti(30nm) and Au(70nm) structure. Finally, Al(150nm) as a gate metal was evaporated. TFT devices were heat treated in a furnace at $250^{\circ}C$ in nitrogen atmosphere for an hour. The electrical properties of the TFTs were measured using a probe-station to measure I-V characteristic. TFT whose thickness was 150nm exhibits a good subthreshold swing(S) of 0.72 V/decade and high on-off ratio of 1E+08. Field effect mobility, saturation effect mobility, and threshold voltage were evaluated 7.2, 5.8, 8V respectively.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2007년도 추계종합학술대회
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• pp.758-760
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• 2007

최근에 유기물 전계효과 트랜지스터의 연구는 전자 소자 분야에서 널리 알려져 있다. 특히 본 연구에서는 CuPc 물질을 기본으로 하여 소자를 제작하고, 또한 기판의 온도를 달리 하여 CuPc/Au 구조 소자의 표면 전위 특성을 측정하였다. 기판은 slide glass를 사용하였고, CuPc 박막파 Au 전극은 진공 증착법을 이용하였다. 측정 온도의 범위는 0 - $100^{\circ}C$이었으며, 모든 측정은 진공 상태에서 측정이 이루어 졌다. 상온에서의 표면 전위 값은 약 600mV의 값을 보이고 있으며, 기판의 온도가 $100^{\circ}C$일 때 표면 전위 값은 약 500mV의 값으로 감소하는 것을 알 수 있다. 이러한 표면 전위 값의 변화는 기판의 온도가 상승하면서 CuPc 벌크 박막의 특성이 변화하는 것으로 판단되며, AFM 측정을 통해 확인 할 수 있었다.

• 천문학논총
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• 제15권spc2호
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• pp.45-52
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• 2000

Four plasma instruments are currently under development for KAISTSAT-4 (K-4) which is scheduled for launch in 2002. They are the Solid-State Telescope, Electro-Static Analyzer, Langmuir Probe, and the Scientific Magnetometer, that will respectively allow in-situ detection of high energy and low energy components of auroral particles, ionospheric thermal electrons, and magnetic field disturbances. These instruments, together with the Far-ultraviolet IMaging Spectrograph, will provide micro-scale physics of Earth's polar ionosphere with detailed spectral information that has not been previously achieved with other space missions. In this paper, we review the concept of the four space plasma instruments as well as the anticipated results from the instruments.

• 천문학회보
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• 제42권1호
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• pp.45.1-45.1
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• 2017

Optical variability is one way to probe the nature of the central engine of AGN at smaller linear scales, and previous studies have shown that optical variability of AGN is more prevalent at longer timescales and at shorter wavelengths. To understand the properties and physical mechanism of variability, we are performing the KMTNet Active Nuclei Variability Survey (KANVaS). Especially, we investigated intra-night variability of AGN with KMTNet data which observed COSMOS field during 3 separate nights from 2015 to 2016 in B, V, R, and I bands. Each night was composed of 5, 9, and 11 epochs with 20-30 min cadence. To find AGN in the COSMOS field, we applied multi-wavelength selection methods. Using X-ray, mid-infrared, and radio selection methods, 50-60, 130-220, 20-40 number of AGN are detected, respectively. Achieving photometric uncertainty ~0.01mag by differential photometry, we employed a standard time-series analysis tool to identify variable AGN, chi-square test. Preliminary results indicate that there is no evidence of intra-night optical variability of AGN. It is possible that previous studies discovered intra-night variability used inappropriate photometric error. However, main reason seems that our targets have fainter magnitude (higher photometric error) than that of previous studies. To discover variability of AGN, we will investigate longer timescale variability of AGN.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.5-5
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• 2009

Thin-film-transistors (TFTs) that can be prepared at low temperatures have attracted much attention because of the great potential for transparent and flexible electronics. One of the mainstreams in this field is the use of organic semiconductors such as pentacene. But device performance of the organic TFTs is still limited due to low field-effect mobility and rapid degradation after exposing to air. Alternative approach is the use of amorphous oxide semiconductors as a channel. Amorphous oxide semiconductors (AOSs) based TFTs showed the fast technological development, because AOS films can be fabricated at room temperature and exhibit the possibility in application like flexible display, electronic paper, and larges solar cells. Among the various AOSs, a-IGZO has lots of advantages because it has high channel mobility, uniform surface roughness and good transparency. [1] The high mobility is attributed to the overlap of spherical s-orbital of the heavy post-transition metal cations. This study demonstrated the effect of the variation in channel thickness from 30nm to 200nm on the TFT device performance. When the thickness was increased, turn-on voltage and subthreshold swing was decreased. The a-IGZO channels and source/drain metals were deposited with shadow mask. The a-IGZO channel layer was deposited on $SiO_2$/p-Si substrates by RF magnetron sputtering, where RF power is 150W. And working pressure is 3m Torr, at $O_2/Ar$ (2/28 sccm) atmosphere. The electrodes were formed with electron-beam evaporated Ti (30 nm) and Au (70 nm) bilayer. Finally, Al (150nm) as a gate metal was thermal-evaporated. TFT devices were heat-treated in a furnace at 250 $^{\circ}C$ and nitrogen atmosphere for 1hour. The electrical properties of the TFTs were measured using a probe-station. The TFT with channel thickness of 150nm exhibits a good subthreshold swing (SS) of 0.72 V/decade and on-off ratio of $1{\times}10^8$. The field effect mobility and threshold voltage were evaluated as 7.2 and 8 V, respectively.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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• pp.163-163
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• 2000

In this research, we used the ion irradiation technique which has an advantae in improving intentionally the properties of surface and interface in a non-equilibrium, instead of the conventional annealing method which has been known to improve the material properties in the equilibrium stat. Cu/Co multilayered films were prepared on SiN4/SiO2/Si substrates by the electron-beam evaporation for the Co layers and the thermal evaporation for the Cu layers in a high vacuum. The ion irradiation with a 80keV Ar+ was carried out at various ion doses in a high vacuum. Hysteresis loops of the films were investigated by magneto-optical polar Kerr spectroscopy at various experimental conditions. The change of atomic structure of the films before and after the ion irradiation was studied by glancing angle x-ray diffraction, and the intermixing between Co and Cu sublayers was confirmed by Rutherford backscattering spectroscopy. The surface roughness and magneto-resistance were measured by atomic force microscopy and with a four-point probe system, respectively. During the magneto-resistance measurement, we changed temperature and the direction of magnetization. From the results of experiments, we found that the change at the interfaces of the Cu/Co multilayered film induced by ion irradiation cause the change of magnetic properties. According to the change in hysteresis loop, the surface inplane component of magnetic easy axis was isotropic before the ion irradiation, but became anisotropic upon irradiation. It was confirmed that this change influences the axial behavior of magneto-resistance. Especially, the magneto-resistance varied in accordance with an external magnetic field and the direction of current, which means that magneto-resistance also shows the uniaxial behavior.

• 한국진공학회지
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• 제7권1호
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• pp.17-23
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• 1998

RF magnetron co-sputtering법으로 PFN[$Pb(Fe_{0.5}Nb_{0.5}O_3(PFN)$]박막을 제조한 후 급속 열처리(rapid thermal annealing, RTA)하여 XRD(s-ray diffractometer)를 통한 박막의 상변 태 및 전기적 특성에 대하여 연구하였다. $SiO_2$/Si, ITO/glass, 및 Pt/Ti/$SiO_2$/Si기판에 PFN 박막을 증착시켰다. 기판의 변화에 따른 증착된 PFN박막의 조성변화는 관찰할 수 없었다. ITO/glass기판을 사용한 경우와 $SiO_2$/Si기판을 사용하여 증착시킨 PFN박막의 결정구조를 분석한 결과 ITO/glass기판에 증착한 시편이 perovskite상으로의 결정화가 더욱 우세하였다. 이는$SiO_2$기판의 경우 Pb의 확산에 의해 결정화가 잘 되지 못하기 때문이다. Pt/Ti/$SiO_2$/Si 기판 위에 증착시킨 PFN박막의 경우 perovskite상과 pyrochlore상이 공존하였다. Perovskite 상으로의 상변태에 대한 중요한 변수로는 열처리 온도와 Pb의 함량인 것이 확인되었으며, Pb의 함량이 화학양론적 조성비에 비해 5-10%정도 과량일수록 perovskite상으로의 상변태 온도가 낮아지고 상전이 정도가 향상되는 것으로 나타났으며, 급속 열처리 후 XRD를 이용 한 결정성 분석결과를 통해 결정한 perovskite상으로의 상전이 최저온도는 $500^{\circ}C$였다. Pb/(Fe+Nb)의 조성비가 1.17인 경우의 박막을 질소 분위기 하에서 $600^{\circ}C$로 30초간 급속열 처리 하였을 때 낮은 누설 전류 값과 1kHz에서 88의 유전 상수 값, 2.0$\mu$C/$\textrm{cm}^2$의 잔류 분극 값과 144kV/cm의 항전계 값을 얻었다.