• 한국전산구조공학회:학술대회논문집
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• 한국전산구조공학회 2002년도 가을 학술발표회 논문집
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• pp.153-160
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• 2002

Based on a generalized variational principle for magneto-thermo-elasticity, a theoretical model is proposed to describe the coupled magneto-thermo-elastic interaction in soft ferromagnetic plates. Using the linearized theory of magneto-elasticity and perturbation technique, we analyze the magneto-elastic and magneto-thermo- elastic instability of simply supported ferromagnetic plates subjected to thermal and magnetic fields. A nonlinear finite element procedure is developed next to simulate the magneto-thermo-elastic behavior of a finite-size ferromagnetic plates. The effects of thermal and magnetic fields on the magneto-thermo-elastic bending and buckling is investigated in some detail.

• 한국전산구조공학회논문집
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• 제15권4호
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• pp.727-739
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• 2002

강자성 판의 자기-열-탄성 상호작용을 고찰하기 위하여 자기-열-탄성에 관한 일반화된 변분원리에 기초한 이론적인 모델이 제안되었다. 자탄성 선형화이론과 섭동법을 사용하여, 온도장과 자기장으로 재하된 단순지지 강자성 평판의자-탄성 좌굴과 자기-열-탄성 좌굴거동을 해석하였다. 또한 해석적인 고찰이 어려운 보다 복잡한 강자성 판의 자기-열-탄성 거동을 모사하기 위하여 비선형 유한요소 모형을 개발하였다. 이 유한요소모형을 이용하여 유한한 강자성 판의 자기-열-탄성 ？과 좌굴거동 그리고, 이에대한 온도장과 자기장의 영향에 대하여 고찰하였다.

• Journal of the Korean Physical Society
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• 제73권12호
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• pp.1884-1888
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• 2018

We have employed electron paramagnetic resonance spectroscopy and magnetization measurements in order to study the effect of Al-incorporation on the magnetic interactions in ZnO:Mn diluted magnetic semiconductors. Al-doping is shown to decrease the antiferromagnetic correlation and to increase the ferromagnetic interaction, which is attributed to the hydrogen-mediated ferromagnetic Mn complexes in our Mn-doped ZnO samples.

• Journal of Magnetics
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• 제5권4호
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• pp.139-142
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• 2000

The interlayer coupling between adjacent ferromagnetic layers was examined for CoFe/Cu/NiFe trilayer systems. A series of films of CoFe (20 nm)/Cu($t_{cu}$)/NiFe (20 nm) trilayers with Cu spacer thickness, $t_{cu}$, in the range of 1~10 m was deposited on Si(100) wafers at room temperature by DC magnetron sputtering. In order to understand the dependence of the magnetic interaction between ferromagnetic $Co_{90}Fe_{10}$ (wt.%) and $Ni_{81}Fe_{19}$ (wt.%) layers separated by a nonmagnetic Cu spacer on the Cu layer thickness, we investigated the derivative ferromagnetic resonance (FMR) spectra. The FMR results were analyzed using the model of Layadi and Art-man for interlayer interaction. The interlayer coupling constant decreases in an oscillatory manner as the Cu spacer thickness increases up to 10 nm and approaches zero above 10 nm. The interlayer coupling constant is positive for all samples. Hence, it seems that the exchange coupling between adjacent CoFe and NiFe layers separated by a Cu layer is ferromagnetic.

• 반도체디스플레이기술학회지
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• 제19권3호
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• pp.49-54
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• 2020

We studied the electronic and magnetic properties for the Mn-doped chalcopyrite (CH) AlAs, GaAs, and AlGaAs₂ semiconductor by using the first-principles calculations. The chalcopyrite AlGaP₂, AlGaAsP, and AlGaAs₂ compounds have a semiconductor characters with a small band-gap. The interaction between Mn-3d and As-4p states at the Fermi level dominate rather than the other states. The ferromagnetic ordering of dopant Mn with high magnetic moment is induced due to the Mn(3d)-As(4p) strong coupling, which is attributed by the partially filled As-4p bands. The holes are mediated with keeping their 3d-electrons, therefore the ferromagnetic state is stabilized by this double-exchange mechanism. We noted that the ferromagnetic state with high magnetic moment is originated from the hybridized As(4p)-Mn(3d)-As(4p) interaction mediated by the holes-carrier.

• Bulletin of the Korean Chemical Society
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• 제26권7호
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• pp.1031-1032
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• 2005

• 한국재료학회지
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• 제26권1호
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• pp.35-41
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• 2016

The electrical transport properties of $La_{0.5}Sr_{0.5}CrO_3$ below room temperatures were investigated by dielectric, dc resistivity, magnetic properties and thermoelectric power. Below $T_c$, $La_{0.5}Sr_{0.5}CrO_3$ contains a dielectric relaxation process in the tangent loss and electric modulus. The $La_{0.5}Sr_{0.5}CrO_3$ involves the transition from high temperature thermal activated conduction process to low temperature one. The transition temperature corresponds well to the Curie point. The relaxation mechanism has been discussed in the frame of electric modulus spectra. The scaling behavior of the modulus suggests that the relaxation mechanism describes the same mechanism at various temperatures. The low temperature conduction and relaxation takes place in the ferromagnetic phase. The ferromagnetic state in $La_{0.5}Sr_{0.5}CrO_3$ indicates that the electron - magnon interaction occurs, and drives the carriers towards localization in tandem with the electron - lattice interaction even at temperature above the Curie temperature.

• Transactions on Electrical and Electronic Materials
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• 제7권1호
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• pp.12-15
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• 2006

We present the structural, magnetic, and electrical properties in the (Al,Mn)N films with various Mn concentrations grown by plasma-enhanced molecular beam epitaxy. X-ray diffraction analyses reveal that the (Al,Mn)N films have the wurtzite structure without secondary phases. All (Al,Mn)N films showed the ferromagnetic ordering. Particularly, ($Al_{1-x}Mn_{x}$)N film with x = 0.028 exhibited the highest magnetic moment per Mn atom at room temperature. Since all the films exhibit the insulating characteristics, the origin of ferromagnetism in (Al,Mn)N might be attributed to either indirect exchange interaction caused by virtual electron excitations from Mn acceptor level to the valence band within the samples or a percolation of bound magnetic polarons arisen from exchange interaction of localized carriers with magnetic impurities in a low carrier density regime.

• 반도체디스플레이기술학회지
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• 제9권3호
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• pp.1-4
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• 2010

First-principles calculations based on spin density functional theory are performed to study the spin-resolved electronic properties of AlN doped with a Cu concentration of 6.25%-18.75%. The ferromagnetic state is more energetically favorable state than the antiferromagnetic state or the nonmagnetic state. For $Al_{0.9375}Cu_{0.0625}N$, a global magnetic moment of 1.26 mB per supercell, with a localized magnetic moment of 0.75 $m_B$ per Cu atom is found. The magnetic moment is reduced due to an increase in the number of Cu atoms occupying adjacent cation lattice position. For $Al_{0.8125}Cu_{0.1875}N$, the magnetism of the supercell disappears by the interaction of the neighboring Cu atoms. The nonmagnetic to ferromagnetic phase transition is found to occur at this Cu concentration. The range of concentrations that are spin-polarized should be restricted within very narrow.

• Journal of Magnetics
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• 제20권4호
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• pp.331-335
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• 2015

The ferromagnetic and electronic structure for the $Al_xGa_{1-x}P$ and Mn-doped $AlGaP_2$ was studied by using the self-consistent full-potential linear muffin-tin orbital method. The lattice parameters of un-doped $Al_xGa_{1-x}P$ (x = 0.25, 0.5, and 0.75) were optimized. The band-structure and the density of states of Mn-doped $AlGaP_2$ with or without the vacancy were investigated in detail. The P-3p states at the Fermi level dominate rather than the other states. Thus a strong interaction between the Mn-3d and P-3p states is formed. The ferromagnetic ordering of dopant Mn with high magnetic moment is induced due to the (Mn-3d)-(P-3p)-(Mn-3d) hybridization, which is attributed by the partially filled P-3p bands. The holes are mediated with keeping their 3d-characters, therefore the ferromagnetic state is stabilized by this double-exchange mechanism.