• Proceedings of the Materials Research Society of Korea Conference
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• 1994.11a
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• pp.10-10
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• 1994

• 제어로봇시스템학회:학술대회논문집
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• 2003.10a
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• pp.382-385
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• 2003

In this paper, in order to improve the control performance of piezoelectric actuator, an integrated control structure is proposed. The control structure consists of inverse hysteresis model , to compensate the hysteresis nonlinearty problem, and feedforward - feedback controller to give a good tracking performance. The inverse hysteresis model and neural network are used as feed-forward controller, and PID controller is used as a feedback controller. From diverse experiments it is concluded that the proposed control scheme gives good tracking performance than the classical control does.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2004.10a
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• pp.383-388
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• 2004

A piezoelectric actuator yields hysteresis effect due to its composed ferroelectric. Hysteresis nonlinearty is neglected when a piezoelectric actuator moves with short stroke. However when it moves with long stroke and high frequency, the hysteresis nonlinearty can not be neglected. The hysteresis nonlinearty of piezoelectric actuator degrades the control performance in precision position control. In this paper, in order to improve the control performance of piezoelectric actuator, an inverse modeling scheme is proposed to compensate the hysteresis nonlinearty problem. And feedforward - feedback controller is proposed to give a good tracking performance. The Feedforward controller is inverse hysteresis model, Nueral network and PID control is used as a feedback controller. To show the feasibility of the proposed controller and hysteresis modeling, some experiments have been carried out. It is concluded that the proposed control scheme gives good tracking performance

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.2 no.1
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• pp.70-75
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• 1992

A model for a microstructural residual stress in a ferroelectric material is proposed. Based on this model, two facts are estimated. One of them is that the residual stress on a grain boundary is larger than that on a domain boundary. Another one is that the microstructural residual stress decrease with increasing grain size. These facts are confirmed by the microcrack morphology and the dependence of dielectric constant hysteresis between heating and cooling on grain size in $PbZr_{0.4}Ti_{0.6}O_3$ ceramics.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.27 no.6
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• pp.849-856
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• 2003

A three-dimensional constitutive model for polarization switching in ferroelectric materials is used to predict the formation of switching zones in an atomic force microscopy(AFM) tip/ferroelectric thin film/bottom electrode system via finite element simulation. Initially the ferrolectric film is poled upward and the bottom electrode is grounded. A strong dc field is imposed on a fixed point of the top surface of the film through the AFM tip. A small switching zone with downward polarization is nucleated and grows with time. It is found that initially the shape of the switched zone is that of a bulgy dagger, but later turn to the shape of a reversed cup with the lower part wider than the upper part. It can also be concluded that the size of switching zones increases with the period of applied electric potential. The present results are qualitatively consistent with experimental observations.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.404-407
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• 2003

Among the ferroeletric thin films that have been widely investigated for ferroelectric random access memory (FRAM) applications, the $SrBi_2Ta_2O_9$ (SBT) thin film is appropriate as a memory capacitor material due to its excellent fatigue endurance. SBT thin films were etched in high-density $Cl_2/Ar$ in inductively coupled plasma. The maximum etch rate of SBT film is $1834\;{\AA}/min$ under $Cl_2/(Cl_2+Ar)$ of 30 %, rf power of 700 W, dc-bias voltage of -250 V, chamber pressure of 11 mTorr and gas flow rate of 20 sccm.

• Journal of the Korean Ceramic Society
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• v.20 no.1
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• pp.19-24
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• 1983

Dielectrics used as capacitor was studied in the system of $Pb(MgW)_{0.5} O_3-PbTiO_3-PbZrO_3$ Curie tempera-tures of $PbTiO_3 PbZrO_3$ and $Pb[MgW]_{0.5} O_3$ were 49$0^{\circ}C$ 23$0^{\circ}C$ and 39$0^{\circ}C$ respectively. When these materials formed solid solution the more amount of $Pb(MgW)_{0.5}O_3$ was increased the more Curie temperature lowered and dielectric constant increased. Higher dielectric constants were measured in the solid solution of which X-Ray diffraction patterns were changed. Especially Curie temperature and dielectric constant were 85$^{\circ}C$ and 4159 respectively in the composition of 60 $Pb(MgW)_{0.5}O_3-30 PbTiO_3-10PbZrO_3$. Also in this composition ferroeletric material with thermal stability was obtained.

• Journal of the Korean Chemical Society
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• v.37 no.1
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• pp.92-97
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• 1993

Sol-Gel Process is a new method of synthesis of high-quality of glass and glass-ceramics. Ferroeletric material, $BaTiO_3$ powder was made by reacting $Ba(OH)_2$ and $Ti[OCH(CH_3)_2]_4$ in alcohol. There was about 16.5% weight loss in thermogravimetric analysis. It was crystallized to tetragonal structure by heat treatment at $700^{\circ}C$ for 2 hours and had a specific surface area, 16.0 $m^2/g.$ Shrinkage curve by sintering was began around $1100^{\circ}C$ in dilatometer analysis.

• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.1881-1883
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• 2005

In this study, PZT thin films were fabricated using sol-gel Processing onto $Si/SiO_2/Ti/Pt$ substrates. PZT sol with different Zr/Ti ratio(20/80, 30/70, 40/60, 52/48) were prepared, respectively. The films were fabricated by using the spin-coating method on substrates. The films were heat treated at $450^{\circ}C$, $650^{\circ}C$ by rapid thermal annealing(RTA). The preferred orientation of the PZT thin films were observed by X-ray diffraction(XRD), and Scanning electron microscopy(SEM). All of the resulting PZT thin films were crystallized with perovskite phase. The fine crystallinity of the films were fabricated. Also, we found that the ferroelectric properties from the dielectric constant of the PZT thin films were over 600 degrees, P-E hysteresis constant. And the leakage current densities of films were lower than $10^{-8}\;A/cm^2$. It is concluded that the PZT thin films by sol-gel process to be convinced of application for ferroelectric memory device.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.21-24
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• 1997

Ferroeletric LiNbO$_3$ thin films hale been prepared directly on Si(100) substrates by conventional RF magnetron spurttering system for nonvolatile memory applications. As-deposited films were performed RTA(Rapid Thermal Annealing) treatment in an oxygen atmosphere at 600 $^{\circ}C$ for 60 s. The rapid thermal annealed films were changed to poly-crystalline ferroelectric nature from amorphous of as-deposition. The resistivity of the ferroelectric LiNbO$_3$ film was increased from a typical vague of 1~2$\times$10$^{8}$ $\Omega$.cm before the annealing to about 1$\times$10$^{13}$ $\Omega$.cm at 500 kV/cm and reduce the interface state density of the LiNbO$_3$/Si(100) interface to about 1$\times$10$^{11}$ cm$^2$ . eV. Ferroelectric hysteresis measurements using a Sawyer-Tower circuit yielded remanent polarization (Pr) and coercive field (Ec) values of about 1.2 $\mu$C/cm$^2$ and 120 kV/cm, respectively.