• 한국재료학회:학술대회논문집
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• 한국재료학회 1994년도 추계 학술발표 강연 및 논문 개요집
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• pp.10-10
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• 1994

• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 2003년도 ICCAS
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• pp.382-385
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• 2003

In this paper, in order to improve the control performance of piezoelectric actuator, an integrated control structure is proposed. The control structure consists of inverse hysteresis model , to compensate the hysteresis nonlinearty problem, and feedforward - feedback controller to give a good tracking performance. The inverse hysteresis model and neural network are used as feed-forward controller, and PID controller is used as a feedback controller. From diverse experiments it is concluded that the proposed control scheme gives good tracking performance than the classical control does.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2004년도 추계학술대회 논문집
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• pp.383-388
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• 2004

A piezoelectric actuator yields hysteresis effect due to its composed ferroelectric. Hysteresis nonlinearty is neglected when a piezoelectric actuator moves with short stroke. However when it moves with long stroke and high frequency, the hysteresis nonlinearty can not be neglected. The hysteresis nonlinearty of piezoelectric actuator degrades the control performance in precision position control. In this paper, in order to improve the control performance of piezoelectric actuator, an inverse modeling scheme is proposed to compensate the hysteresis nonlinearty problem. And feedforward - feedback controller is proposed to give a good tracking performance. The Feedforward controller is inverse hysteresis model, Nueral network and PID control is used as a feedback controller. To show the feasibility of the proposed controller and hysteresis modeling, some experiments have been carried out. It is concluded that the proposed control scheme gives good tracking performance

• 한국결정성장학회지
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• 제2권1호
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• pp.70-75
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• 1992

강유전 요업체내에 존재하는 잔류응력에 대한 모델이 제시되었다. 모델로부터 다음과 같은 두가기 사실을 알 수 있었다. 첫째 잔류응력은 입계와 분역경계에 존재하며, 입계에 존재하는 응력이 분역경계에 존재하는 응력보다 컸다. 둘째는 입자내에 분역이 존재할 때, 잔류응력은 입자크기가 증가함에 따라 감소했다. 위와 같은 사실은 ($PbZr_{0.4}Ti_{0.6}O_3$)요업체에서 분극에 의해 유발된 미세균열과 입자크기에 따른 승온과 냉각시 유전율차이로부터 증명되었다.

• 대한기계학회논문집A
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• 제27권6호
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• pp.849-856
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• 2003

A three-dimensional constitutive model for polarization switching in ferroelectric materials is used to predict the formation of switching zones in an atomic force microscopy(AFM) tip/ferroelectric thin film/bottom electrode system via finite element simulation. Initially the ferrolectric film is poled upward and the bottom electrode is grounded. A strong dc field is imposed on a fixed point of the top surface of the film through the AFM tip. A small switching zone with downward polarization is nucleated and grows with time. It is found that initially the shape of the switched zone is that of a bulgy dagger, but later turn to the shape of a reversed cup with the lower part wider than the upper part. It can also be concluded that the size of switching zones increases with the period of applied electric potential. The present results are qualitatively consistent with experimental observations.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.404-407
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• 2003

Among the ferroeletric thin films that have been widely investigated for ferroelectric random access memory (FRAM) applications, the $SrBi_2Ta_2O_9$ (SBT) thin film is appropriate as a memory capacitor material due to its excellent fatigue endurance. SBT thin films were etched in high-density $Cl_2/Ar$ in inductively coupled plasma. The maximum etch rate of SBT film is $1834\;{\AA}/min$ under $Cl_2/(Cl_2+Ar)$ of 30 %, rf power of 700 W, dc-bias voltage of -250 V, chamber pressure of 11 mTorr and gas flow rate of 20 sccm.

• 한국세라믹학회지
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• 제20권1호
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• pp.19-24
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• 1983

Dielectrics used as capacitor was studied in the system of $Pb(MgW)_{0.5} O_3-PbTiO_3-PbZrO_3$ Curie tempera-tures of $PbTiO_3 PbZrO_3$ and $Pb[MgW]_{0.5} O_3$ were 49$0^{\circ}C$ 23$0^{\circ}C$ and 39$0^{\circ}C$ respectively. When these materials formed solid solution the more amount of $Pb(MgW)_{0.5}O_3$ was increased the more Curie temperature lowered and dielectric constant increased. Higher dielectric constants were measured in the solid solution of which X-Ray diffraction patterns were changed. Especially Curie temperature and dielectric constant were 85$^{\circ}C$ and 4159 respectively in the composition of 60 $Pb(MgW)_{0.5}O_3-30 PbTiO_3-10PbZrO_3$. Also in this composition ferroeletric material with thermal stability was obtained.

• 대한화학회지
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• 제37권1호
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• pp.92-97
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• 1993

졸-겔법은 양질의 유리와 결정화 유리를 합성할 수 있는 새로운 방법이다. 알코올 용액에서 $Ba(OG)_$ 와 Ti[OCH(CH_3)_2]$를 반응시켜 강유전성 물질인 티탄산 바륨 분말을 합성하였다. 이 분말을 열중량 분석한 결과 전체적으로 약 16.5%의 중량 감소가 있었다. $700^{\circ}C$에서 2시간 동안 열처리하여 정방정의 티탄산 분말을 얻었으며 이때 비표면적이 $16.0m^2/g$였다. 소결에 의한 수축을 측정한 결과 $1100^{\circ}C$ 부근에서 시작되었다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 제36회 하계학술대회 논문집 C
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• pp.1881-1883
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• 2005

In this study, PZT thin films were fabricated using sol-gel Processing onto $Si/SiO_2/Ti/Pt$ substrates. PZT sol with different Zr/Ti ratio(20/80, 30/70, 40/60, 52/48) were prepared, respectively. The films were fabricated by using the spin-coating method on substrates. The films were heat treated at $450^{\circ}C$, $650^{\circ}C$ by rapid thermal annealing(RTA). The preferred orientation of the PZT thin films were observed by X-ray diffraction(XRD), and Scanning electron microscopy(SEM). All of the resulting PZT thin films were crystallized with perovskite phase. The fine crystallinity of the films were fabricated. Also, we found that the ferroelectric properties from the dielectric constant of the PZT thin films were over 600 degrees, P-E hysteresis constant. And the leakage current densities of films were lower than $10^{-8}\;A/cm^2$. It is concluded that the PZT thin films by sol-gel process to be convinced of application for ferroelectric memory device.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 추계학술대회 논문집
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• pp.21-24
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• 1997

Ferroeletric LiNbO$_3$ thin films hale been prepared directly on Si(100) substrates by conventional RF magnetron spurttering system for nonvolatile memory applications. As-deposited films were performed RTA(Rapid Thermal Annealing) treatment in an oxygen atmosphere at 600 $^{\circ}C$ for 60 s. The rapid thermal annealed films were changed to poly-crystalline ferroelectric nature from amorphous of as-deposition. The resistivity of the ferroelectric LiNbO$_3$ film was increased from a typical vague of 1~2$\times$10$^{8}$ $\Omega$.cm before the annealing to about 1$\times$10$^{13}$ $\Omega$.cm at 500 kV/cm and reduce the interface state density of the LiNbO$_3$/Si(100) interface to about 1$\times$10$^{11}$ cm$^2$ . eV. Ferroelectric hysteresis measurements using a Sawyer-Tower circuit yielded remanent polarization (Pr) and coercive field (Ec) values of about 1.2 $\mu$C/cm$^2$ and 120 kV/cm, respectively.