• Journal of Korean Vacuum Science & Technology
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• v.6 no.2
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• pp.76-78
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• 2002

We have carried out the first-principle electronic structure calculations to investigate the spacer layer formation of Fe/Si multilayered films (MLF) and compared with the results obtained by optical spectroscopy. The computer-simulated spectra based on various structural models of MLF showed that neither FeSi$_2$ nor B2O-phase FeSi, which are semiconducting, could be considered as the spacer layers in the Fe/Si MLF for the strong antiferromagnetic coupling. The optical properties of the spacer extracted from the effective optical response of the MLF strongly support its metallic nature. The optical conductivity spectra of various phases of Fe-Si compounds were calculated and compared with the extracted optical properties of the spacer. From the above theoretical investigations it is concluded that a E2-phase metallic FeSi compound is spontaneously formed at the interfaces during deposition.

• Applied Chemistry for Engineering
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• v.10 no.3
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• pp.343-348
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• 1999

The iron silicide films were prepared by chemical vapor deposition method using rf-plasma in variations of substrate temperature. rf-power, and ratio of $SiH_4$ and Fe-precursor. While iron silicide films are generally grown by ion beam synthesis (IBS) method of multi-step process, it is confirmed that iron silicide or $\beta$-phase consolidated $Fe_aSi_bC_cH_d$ was formed by one-step process in this study. The characteristics of films is variable because the different amounts of carbon and hydrogen was involved in the films as a function of dilute ratio of Fe-precursors and silane. It was shown that the different characteristics of films in carbon and hydrogen following the ratio of Fe-precursor and silane. The optical gap energy of films fabricated according to substrate temperature was invariant because active site brought in desorption of hydrogen was limiled. When rf-power was above 240 watt, the optical gap energy turned out to have high values because of dangling bonds increased by etching.

• Korean Journal of Materials Research
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• v.6 no.10
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• pp.1043.2-1048
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• 1996

자기기록의 고밀도화로 인해 보자력(Hc)이 큰 자기기록매체가 필요하게 되었다. 고보자력매체에 신호를 충분히 기록하기 위해서는 보다 강한 자장이 필요하다. 이 때문에 포화자화(Ms)가 큰 재료가 필요하며 고주파 영역에서 실효투자율($\mu$eff)이 높아야 한다. Fe계 합금박막은 이에 적합한 재료이다. 본 연구에서는 Fe의 결정자기이방성에 영향을 미치는 Si과 Fe의 격자 변형을 유도할 수 있는 B를 첨가하였다. Fe-B-Si 계 박막을 질소분위기 중에서 RF Matnetron Sputter로 제작하여 연자기적 특성에 관하여 고찰하였다. Fe91.49B4.01Si4.50at% 박막은 35$0^{\circ}C$에서 1시간 열처리를 행함으로써 약 900(10MHz) 정도의 투자율과 7.6Oe의 보자력을 나타냈으며 포화자화는 1300emu/㎤를 얻었다.

• Journal of Magnetics
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• v.4 no.2
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• pp.39-45
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• 1999

Sandwich structures of$ Nd_2Fe_{14}B/Fe/Nd_2Fe_{14}B $magnetic films have been grown by a KrF excimer laser (λ=248 nm) ablation technique. Magnetic properties were characterized by varying the thickness of hard ($Nd_2Fe_{14}B$) and soft (Fe) magnetic films and the volume fraction as well. In the (x)nm[NdFeB]/(y)nm[Fe]/(x)nm[NdFeB]/(100) Si structure the thickness (x) was varied from 3.6 to 54 nm, and (y) from 15 to 112 nm. At (y) = 15~20 nm where the volume fraction of Fe corresponded to 61~75%, the sandwich structure exhibited an enhanced Mr/Ms and iHc as well from the result of the exchange coupling between the magnetic layers. Experimentally calculated exchange constant$ (A_s) of A_s = 2.5{\times}10^{-10} J/m$ was estimated using the intrinsic coercivity (iHc) of 1.2 kOe at 5 K for the sandwich magnetic trilayers.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.932-934
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• 2004

Due to the increasing variety and capacity of information and communication media, systems of microwave band communication have branched out extensively. Surface acoustic wave (SAW) devices fabricated FeSiB thin films on quartz substrate were deposited by RF magnetron sputter and by photolithographic processes. This device is with a center frequency 146MHz and the insertion loss as low as -43dB was obtained.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.04a
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• pp.3-6
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• 2002

Effect of Ag additive element on microstructure of $Fe_{87-x}Zr_7B_6Ag_x$, magnetic thin films on Si(001) substrates has been investigated using Transmission Electron Microscopy(TEM) and X-ray Diffraction(XRD). All samples with additive Ag element were made by DC-sputtering and subjected to annealing treatments of $300^{\circ}C{\siim}600^{\circ}C$ for 1 hr. TEM and XRD showed that perfectly amorphous state in Ag-free Fe-based films was observed in as-deposited condition. The as-deposited Fe-based films with the presence of Ag constituent have a mixture of Fe-based amorphous and nano-sized Ag crystalline phases. In this case, additive element, Ag was soluted into Fe-based matrix. With the increase in additive element, Ag, insoluble nano-crystalline Ag particles were dispersed in the Fe-based amorphous matrix. Crystallization of Fe-based amorphous phase in the matrix of $Fe_{82}Zr_7B_6Ag_5$ thin films occurred at an annealing temperature of $400^{\circ}C$. Upon annealing, the amorphous-Ag crystalline state of Fe-Zr-B-Ag films was transformed into the mixture of Ag crystalline phase + Fe-based amorphous phase + ${\alpha}$-Fe cluster followed by the crystallization process of ${\alpha}$-Fe nanocrystalline + Ag crystalline phases.

• Journal of Magnetics
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• v.2 no.3
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• pp.76-85
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• 1997

Magnetic and magnetostrictive properties of Tb-Fe and Tb-Fe-B thin films are systematically investigated over a wide composition range from 40.2 to 68.1 at. % Tb. The films were fabricated by rf magnetron sputtering using a composite target which consists of an Fe plate and Tb chips. The microstructure, examined by X-ray diffraction, mainly consists of an amorphous phase and, at high Tb contents, a pure Tb phase also exists. A progressive change in the direction of anisotropy from the perpendicular to in-plane occurs as the Tb content increases and the boundary at which the anisotropy change occurs shifts significantly towards to higher Tb contents with the addition of B. The saturation magnetization exhibits maxima at the Tb contents of 42 and 48 at. % for Tb-Fe and Tb-Fe-B thin films, respectively, and it is decreased by the addition of B. The coercive force, measured in the easy direction, decreases monotonically with the Tb content. Excellent magnetostrictive characteristics, particularly at low magnetic fields, are achieved in both Tb-Fe and Tb-Fe-B thin films; for example, a magnetostriction of 138 ppm is obtained in a Tb-Fe-B thin film at a magnetic field as low as 30 Oe. The excellent magnetostrictive properties of the present thin films are supported by the equally excellent magnetic softness, the coercivity below 10 Oe and a typical squared-loop shape with the saturation field as low as 1 kOe. Due to the excellent low field magnetostrictive characteristics, the present Tb-Fe based thin films are thought to be suitable for Si based microdevices.

• Journal of the Korean Magnetics Society
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• v.14 no.5
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• pp.163-168
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• 2004

We prepared ultra thin film structure of Si(100)/ $SiO_2$(200 nm)/Ta(5 nm)/Ni$_{80}$Fe$_{20/(l～15 nm)}$Ta(5 nm) using an inductively coupled plasma(ICP) helicon sputter. Magnetic properties and cross-sectional microstructures were investigated with a superconduction quantum interference device(SQUID) and a transmission electron microscope(TEM), respectively. We report that NiFe films of sub-3 nm thickness show the B$_{bulk}$ = 0 and B$_{surf}$=-3 ${\times}$ 10$^{-7}$(J/$m^2$). Moreover, Curie temperature may be lowered by decreasing thickness. Coercivity become larger as temperature decreased with 0.5 nm - thick Ta/NiFe interface intermixing. Our result implies that effective magnetic properties of magnetoelastic anisotropy, saturation magnetization, and coercivity may change abruptly in nano-thick films. Thus we should consider those abrupt changes in designing nano-devices such as MRAM applications.

• Applied Chemistry for Engineering
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• v.10 no.1
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• pp.105-111
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• 1999

When the preparation method of iron silicide films possess the annealing process, the interfacial state of the films is not fine. The good quality films were obtained as the plasma was used without annealing processing. Since the injected precursors were various active species in the plasma state, the organic compound was contained in the prepared films. We confirmed the formation of Fe-Si bonds as well as the organic compound by Fe and Si vibration mode in Raman scattering spectrum at $250cm^{-1}$ and Ft-IR. Because of epitaxy growth being progressed by the high energy of plasma at the low temperature of substrate, iron silicide was epitaxially grown to ${\beta}$-phase that had lattice structure such as [220]/[202] and [115]. Band gap of the prepared films had value of 1.182~1.174 eV and optical gap energy was shown value of 3.4~3.7 eV. The Urbach tail and the sub-band-gap absorptions were appeared by organic compound in films. We knew that the prepared films by plasma were obtained a good quality films because of being grown single crystal.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.8
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• pp.888-892
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• 2004

It is necessary to develop soft magnetic layer with high saturation magnetization 4 $\pi{M}_s$ and in-plane magnetic anisotropy field Hk for soft magnetic underlayer of perpendicular magnetic recording media with high signal to noise ratio. Fe-Co-B layer with high 4 $\pi$Ms of about 23 kG deposited on Ni-Fe and Ni-Fe/Si seedlayer exhibited very high in-plane magnetic anisotropy filed Hk of about 280 and 380 Oe, respectively, In-plane XRD studies clarified that the lattice spacing of planes along the easy axis direction was longer than that along the hard axis direction in the Fe-Co-B layers with high Hk. These results indicate that high Hk of Fe-Co-B/Ni-Fe and Fe-Co-B/［Ni-Fe/si］ layers were resulted from magnetoelastic anisotropy owing to a residual stress. Moreover, the high Hk in the Fe-Co-B/Ni-Fe layer was maintained until 30$0^{\circ}C$ annealing temperature.