• 한국진공학회지
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• 제21권5호
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• pp.258-263
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• 2012

펄스레이저 증착법으로 P형 실리콘(100) 기판위에 증착한 Fe 희석된 Si 합금의 구조와 전기적 및 자기적 물성을 연구하였다. 합금시료에 대한 X-선 회절패턴에서 육방정계에 해당하는 FeSi, $Fe_3Si$, 및 $Fe_5Si_3$와 관련된 여러 개의 회절신호가 관측되었으며, 에너지분산분광 측정에 의한 시료내 Fe 원자의 함량은 1.25~6.49 atm, %로 나타났다. 또한, 온도변화에 따른 전기비저항 값의 측정으로부터 5.21 meV와 7.79 meV 두 개의 활성화에너지를 얻을 수 있었다. 절대온도 10 K에서 측정한 최대 자화는 약 100 emu/cc로 나타났으며, 3,000 Oe의 외부자기장하에서 온도의 함수로 측정한 자화 값으로부터 시료의 강자성 특성은 350 K까지도 유지됨을 알 수 있었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.115-116
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• 2008

The ferroelectric vinylidene fluoride-trifluoroethylene ($VF_2$-TrFE) and $Al_2O_3$ passivation layer for the Metal/Insulator/Ferroelectric/Semiconductor (MIFS) structure were deposited using spin coating and remote plasma atomic layer deposition (RPALD), respectively. A 2.5 ~ 3 wt % diluted solution of purified vinylidene fluoride-trifluoroethylene ($VF_2$: TrFE=70:30) in a DMF solution were prepared and deposited on silicon wafer at a optimized spin speed. After annealing in a vacuum ambient at 150 ~ $200^{\circ}C$ for 60 min, upper insulator layer were deposited at temperature ranging from 100 ~ $150^{\circ}C$ by RPALD. We described electrical and structural properties of MIFS fabricated by spin coating and RPALD methods.

• 한국재료학회지
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• 제21권8호
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• pp.439-443
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• 2011

The crystal structure and magnetic properties of a new solid solution type ferrite $(Fe_2O_3)_5-(Al_2O_3)_{3.4}-(Ga_2O_3)_{0.6}-SiO$ were investigated using X-ray diffraction and M$\"{o}$ssbauer spectroscopy. The results of the X-ray diffraction pattern indicated that the crystal structure of the sample appears to be a cubic spinel type structure. The lattice constant (a = 8.317 ${\AA}$) decreases slightly with the substitution of $Ga_2O_3$ even though the ionic radii of the Ga ions are larger than that of the Al ions. The results can be attributed to a higher degree of covalency in the Ga-O bonds than in the Al-O and Fe-O bonds, which can also be explained using the observed M$\"{o}$ssbauer parameters, which are the magnetic hyperfine field, isomer shift, and quadrupole splitting. The drastic change in the magnetic structure according to the Ga ion substitution in the $ (Fe_2O_3)_5(Al_2O_3)_{4-x}(Ga_2O_3)_xSiO$ system and the low temperature variation have been studied through a M$\"{o}$ssbauer spectroscopy. The M$\"{o}$ssbauer spectrum at room temperature shows the superpositions of two Zeeman patterns and a strong doublet. It shows significant departures from the prototypical ferrite and is comparable with the diluted ferrite. The doublet of spectrum at room temperature appears to originate from superparamagnetic clusters and also the asymmetry of the doublet appears to be caused by the preferred orientation of the crystallites. The M$\"{o}$ssbauer spectra below room temperature show various complicated patterns, which can be explained by the freezing of the superparamagnetic clusters. On cooling, the magnetic states of the sample were various and multi critical.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.388-388
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• 2010

In this study, Ferroelectric vinylidene fluoride-trifluoroethylene (VF2-TrFE) copolymer films were directly deposited on degenerated Si (n+, $0.002\;{\Omega}{\cdot}cm$) using by spin coating method. A 1~5 wt% diluted solution of purified vinylidene fluoride-trifluoroethylene (VF2:TrFE = 70:30) in a dimethylformamide (DMF) solvent were prepared and deposited on silicon wafers at a spin rate of 2000 ~ 4000 rpm for 2 ~ 30 seconds. After annealing in a vacuum ambient at 100 ~ $200^{\circ}C$ for 60 min, upper aluminum electrodes were deposited by vacuum evaporation for electrical measurement. X-ray diffraction results showed that the VF2-TrFE films on Si substrates had $\beta$-phase of copolymer structures. The capacitance on highly doped Si wafer showed hysteresis behavior like a butterfly shape and this result indicates clearly that the copolymer films have ferroelectric properties. The typical measured remnant polarization ($P_r$) and coercive filed ($E_c$) values were about $5.7\;{\mu}C/cm^2$ and 710 kV/em, respectively, in an applied electric field of ${\pm}$ 1.5 MV/em. The gate leakage current densities measured at room temperature was less than $7{\times}10^{-7}\; A/cm^2$ under a field of 1 MV/cm.

• 한국재료학회지
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• 제5권7호
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• pp.808-815
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• 1995

비화학량론적 치환형 페라이트 Fe$_{}1.429$(Al$_{4-x}$ Ga$_{x}$)$_{0.286}$ Si$_{0.143}$ /O$_4$계의 자기적 상태를 Mossbauer 분광법과 SQUID를 이용해 조사 하였다. 실온에서의 Mossbauer 스펙트럼은 x=0.2 경우 잘 정렬된 두개의 Zeeman 패턴을 보이고 x=0.4 경우 두개의 Zeeman 패턴과 이중선이 중첩되어 나타난다. 이중선의 근원은 치환 및 온도의존성을 고려할때 초상자성 cluster에 의한 것으로 보여지며 Neel's collinear모델과는 현저한 차이를 보이는 희석된 페라이트의 특성을 갖는다. 저온에서의 mossbauer 스팩트럼은 매우 다양한 형태를 보이며 초상자성 cluster의 freezing에 그 원인을 두고 있다. 그 영향으로 온도가 내려감에 따라 다임계적인 자기적 상태를 갖는다. SQUID 측정으로 얻어진 자화값이 50K 이하에서 급격히 감소하였는데 이것은 스핀 freezing과 초상자성 효과를 포함하는 스핀 canting의 효과로 설명되어 진다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.20-21
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• 2008

Ferroelectric vinylidene fluoride-trifluoroethylene ($VF_2$-TrFE) copolymer films were directly deposited on degenerated Si ($n^+$, 0.002 $\Omega{\cdot}cm$) using by dip coating method. A 1 ~ 3 wt% diluted solution of purified vinylidene fluoride-trifluoroethylene ($VF_2$:TrFE=70:30) in a dimethylformamide (DMF) solvent were prepared and deposited on silicon wafers using dip coating method for 10 seconds. After Post-Annealing in a vacuum ambient at 100~200 $^{\circ}C$ for 60 min, upper aluminum electrodes were deposited by thermal evaporation through the shadow mask to complete the MFS structure. The ferroelectric $\beta$-phase peak of films, depending on the annealing temperature, started to show up around $125^{\circ}C$, and the intensity of the peak increased with increasing annealing temperature. Above $175^{\circ}C$, the peak started to decrease. The C-V characteristics were measured using a Precision LCR meter (HP 4284A) with frequency of 1MHz and a signal amplitude of 20 mV. The leakage-current versus electric-field characteristics was measured by mean of a pA meter/DC voltage source (HP 4140B).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.169-170
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• 2006

In this study, ultra thin films of ferroelectric vinylidene fluoride-trifluoroethylene (VF2-TrFE) copolymer were fabricated on degenerated Si (n+, $0.002\;{\Omega}{\cdot}cm$) using by spin coating method. A 1~5 wt% diluted solution of purified vinylidene fluoride-trifluoroethylene (VF2:TrFE=70:30) in a dimethylformamide (DMF) solvent were prepared and deposited on silicon wafers at a spin rate of 2000~5000rpm for 30 seconds. After annealing in a vacuum ambient at $200^{\circ}C$ for 60 min, upper gold electrodes were deposited by vacuum evaporation for electrical measurement. X-ray diffraction results showed that the VF2-TrFE films on Si substrates had $\beta$-phase of copolymer structures. The capacitance on $n^+$-Si(100) wafer showed hysteresis behavior like a butterfly shape and this result indicates clearly that the dielectric films have ferroelectric properties. The typical measured remnant polarization (2Pr) and coercive filed (EC) values measured using a computer controlled a RT-66A standardized ferroelectric test system (Radiant Technologies) were about $0.54\;C/cm^2$ and 172 kV/cm, respectively, in an applied electric field of ${\pm}0.75\;MV/cm$.

• 대한화학회지
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• 제27권6호
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• pp.424-482
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• 1983

분석시료에 일정량의 표준물을 첨가한 후 희석제로 묽히는 방법을 이용하여 주석슬랙중의 $Ta_2O_5$,$Nb_2O_5$ 및 $SnO_2$를 X-선 분광 분석법으로 정량하였다. 희석제로는 $SiO_2$와 $Fe_2O_3$를 사용하였으며 첨가시료와 1:1의 비로 희석 시켰다. $Ta_2O_5$와 $SnO_2$ 의 분석결과는 $Fe_2O_3$보다 $SiO_2$로 희석시킨 것이 표준 검정곡선법에 의해 얻은 분석값과 더 잘 일치하고, $Nb_2O_5$는 이와 반대로 $SiO_2$보다 $Fe_2O_3$로 희석시킨 것이 더 잘 일치함을 보여주었다.

• 동아시아식생활학회지
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• 제13권1호
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• pp.56-63
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• 2003

증류수, 수도수, 온천수 희석액(55배 희석, 4배 희석, 2배희석)을 사용한 반죽의 발효특성과 빵의 품질에 미치는 영향을 조사하였다. 사용한 온천수의 총고형물 함량은 8,765 ppm 이였으며 주요 무기질로는 Na가 2296 ppm, Ca가 287 ppm, Mg와 K가 각각 65 및 8 ppm을 함유하였다. Fe, Cu, Co, F. Zn, Al, S, Mo, Se 및 Si 등이 0.002~5.2 ppm을 함유하였다. 온천수를 사용한 반죽의 pH는 6.95~7.68로 증류수의 6.40보다 높았다. 반죽부피는 온천수의 농도가 높아짐에 따라 감소하였다. pH를 5.5로 조정한 온천수를 사용한 반죽의 부피는 대조구 보다 오히려 높았다. 온천수를 사용한 빵의 경도와 신장성은 대조구보다 높았으나 pH를 조정한 온천수기 경우는 낮았다. 점착성은 경도 및 신장성과는 역으로 희석 온천수에서 낮았다. pH조정 또는 조정 없이 구운 빵의 부드러운 정도는 2배로 희석한 온천수가 증류수 및 55배, 2배 희석 온천수보다 높았다. 쫄깃한 정도는 전반적으로 온천수가 대조구에 비하여 높았으며 종합적인 맛은 4배로 희석한 온천수가 가장 좋았다.

• 한국재료학회지
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• 제24권12호
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• pp.694-699
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• 2014

We report the chemical vapor deposition growth characteristics of graphene on various catalytic metal substrates such as Ni, Fe, Ag, Au, and Pt. 50-nm-thick metal films were deposited on $SiO_2/Si$ substrates using dc magnetron sputtering. Graphene was synthesized on the metal/$SiO_2$/Si substrates with $CH_4$ gas (1 SCCM) diluted in mixed gases of 10% $H_2$ and 90 % Ar (99 SCCM) using inductively-coupled plasma chemical vapor deposition (ICP-CVD). The highest quality of graphene film was achieved on Ni and Fe substrates at $900^{\circ}C$ and 500 W of ICP power. Ni substrate seemed to be the best catalytic material among the tested materials for graphene growth because it required the lowest growth temperature ($600^{\circ}C$) as well as showing a low ICP power of 200W. Graphene films were successfully grown on Ag, Au, and Pt substrates as well. Graphene was formed on Pt substrate within 2 sec, while graphene film was achieved on Ni substrate over a period of 5 min of growth. These results can be understood as showing the direct CVD growth of graphene with a highly efficient catalytic reaction on the Pt surface.