• Title/Summary/Keyword: Fe dopant

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Development and Synthesis of La Doped CuO-ZnO-Al2O3 Mixed Oxide (La이 도핑된 CuO-ZnO-Al2O3 복합 산화물의 합성공정개발)

  • Jung, Mie-Won;Lim, Saet-Byeol;Moon, Bo-Ram;Hong, Tae-Whan
    • Korean Journal of Materials Research
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    • v.21 no.1
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    • pp.67-71
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    • 2011
  • La doped CuO-ZnO-$Al_2O_3$ powders are prepared by sol-gel method with aluminum isopropoxide and primary distilled water as precursor and solvent. In this synthesized process, the obtained metal oxides caused the precursor such as copper (II) nitrate hydrate and zinc (II) nitrate hexahydrate were added. To improve the surface areas of La doped CuO-ZnO-$Al_2O_3$ powder, sorbitan (z)-mono-9-octadecenoate (Span 80) was added. The synthesized powder was calcined at various temperatures. The dopant was found to affect the surface area and particle size of the mixed oxide, in conjunction with the calcined temperature. The structural analysis and textual properties of the synthesized powder were measured with an X-ray Diffractometer (XRD), a Field-Emission Scanning Electron Microscope (FE-SEM), Bruner-Emmett-Teller surface analysis (BET), Thermogravimetry-Differential Thermal analysis (TG/DTA), $^{27}Al$ solid state Nuclear Magnetic Resonance (NMR) and transform infrared microspectroscopy (FT-IR). An increase of surface area with Span 80 was observed on La doped CuO-ZnO-$Al_2O_3$ powders from $25m^2$/g to $41m^2$/g.

Metallorganic Chemical Vapor Deposition and Characterization of TiO2 Nanoparticles

  • Jung, Oh-Jin;Kim, Sam-Hyeok;Cheong, Kyung-Hoon;Li, W.;Saha, S. Ismat
    • Bulletin of the Korean Chemical Society
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    • v.24 no.1
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    • pp.49-54
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    • 2003
  • TiO₂nanoparticles were synthesized using the metallorganic chemical vapor deposition process. Particles with and without metal ion dopants were obtained. X-ray photoelectron and energy dispersive X-ray spectroscopic measurements confirmed the stoichiometry of the TiO₂nanoparticles. X-ray diffraction patterns showed a polycrystalline anatase structure of TiO₂. Transmission electron microscopy revealed that these particles are of nanoscale dimensions. Exact particle size and size distribution analyses were carried out by dynamic light scattering. The average particle size was determined to be 22 nm. The nanosize particles provided large surface area for photocatalysis and a large number of free surface-charge carriers, which are crucial for the enhancement of photocatalytic activity. To improve the photocatalytic activity, metal ions, including transition metal ions $(Pd^{2+},\;Pt^{4+},\;Fe^{3+})$ and lanthanide ion $(Nd^{3+})$ were added to pure TiO₂nanoparticles. The effects of dopants on photocatalytic kinetics were investigated by the degradation of 2-chlorophenol under an ultraviolet light source. The results showed that the TiO₂nanoparticles with the metal ion dopants have higher photocatalytic activity than undoped TiO₂. The $Nd^{3+}$ ion of these dopant metal ions showed the highest catalytic activity. The difference in the photocatalytic activity with different dopants is related to the different ionic radii of the dopants.

p-Type AlN epilayer growth for power semiconductor device by mixed-source HVPE method (혼합소스 HVPE 방법에 의한 전력 반도체 소자용 p형 AlN 에피층 성장)

  • Lee, Gang Seok;Kim, Kyoung Hwa;Kim, Sang Woo;Jeon, Injun;Ahn, Hyung Soo;Yang, Min;Yi, Sam Nyung;Cho, Chae Ryong;Kim, Suck-Whan
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.29 no.3
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    • pp.83-90
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    • 2019
  • In this paper, Mg-doped AlN epilayers for power semiconductor devices are grown by mixed-source hydride vapor phase epitaxy. Magnesium is used as p-type dopant material in the grown AlN epilayer. The AlN epilayers on the GaN-templated sapphire substrate and GaN-templated-patterned sapphire substrate (PSS), respectively, as the base substrates for device application, were selectively grown. The surface and the crystal structures of the AlN epilayers were investigated by field emission scanning electron microscopy (FE-SEM) and high-resolution-X-ray diffraction (HR-XRD). From the X-ray photoelectron spectroscopy (XPS) and Raman spectra results, the p-type AlN epilayers grown by using the mixed-source HVPE method could be applied to power devices.

Crystal Growth of $Cr:Al_2O_3$ and $Ti:Al_2O_3$ by Czochralski Technique (용액인상법에 의한 $Cr:Al_2O_3$$Ti:Al_2O_3$ 단결정 육성)

  • Yu, Yeong-Mun;Lee, Yeong-Guk;Park, Ro-Hak
    • Korean Journal of Crystallography
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    • v.6 no.1
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    • pp.1-13
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    • 1995
  • Cr:A12O3 and Ti:A12O3 single crystals were grown by Czochralski method, and the effects of crystal growth parameters such as pulling rate, rotation rate, dopant and growth atmosphere on crystal quality were investigated. And spectroscopic properties including lasing efficiency were also measured. Single crystals, sized of 20mm in diameter and 100-135mm in length, were successfully grown from the seed of <001> direction. With the doping level of 0.5w/o Cr2O3, pulling rate 2.0mm/hr, rotation rate of 30rpm and inert atmosphere by nitrogen gas, high quality crystals of Cr:A12O3 were grown. While in case of Ti:A12O3 crystals, high quality crystals were grown under the conditions of the doping level of 0.25w/o TiO2, pulling rate of 1.5mm/hr, rotation rate of 30rpm and reducing atmosphere by hydrogen - nitrogen mixed gas. It was confirmed that Cr3+ ion which maintains its ionoc valence during growth easily de-bubbled than Ti4+ ion which changes its valence, Fe3+ ion also has do-bubbling effect to Ti:A12O3 crystal and the reducing atmosphere by 90% N2 - 10% H2 mixed gas gave effective result on the changing of Ti4+ to Ti3+ and de-bubbling. As a result of spectroscopic measurements of Cr:A12O3 crystal, 4A2 →4F2 and 4F1 absorption transitions and E →4A2(R1) and 2A →4A2(R2) fluorenscence transitions were confirmed. And it was measured that wavelengths of laser R1 and R2 transitions were 696±5nm and 692±5nm respectively, line width of these transitions were 12A, and life-time of fluorenscence was 152μsec. In case of Ti:A12O3 crystals, it was confirmed that absortion transition of 4T2→4E and fluorescence transition of 4E→4T2 with wide range of 650-1050nm was occured. And 147μsec of life-time of fluorescence, 125.4 of figure of merit and 9% of laser efficience were also measured.

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