• Journal of Korean Ophthalmic Optics Society
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• v.8 no.2
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• pp.25-29
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• 2003

Nickel-ferrite $Ni_xFe_{3-x}O_4$ thin films with several composition for Ni on glass substrate was prepared by ferrite plating method in order to make sunglass which cut off ultraviolet and shield electromagnetic field. It has single phase of polycrystalline spinel structure and has gloss as mirror and has high hardness which is no scratch while scraping by using nail. The transmittance of nickel-ferrite thin film is lowered to zero below 400 nm manifestly. And it shows that the nickel-ferrite thin film in nickel composition rate x = 0.09 was most cut oil ultraviolet when compared with goods of other company in the cut off effect of ultraviolet. Therefore, sunglasses coated with $Ni_xFe_{3-x}O_4$ thin film can be used in removing ultraviolet and electromagnetic field.

• Proceedings of the Korean Magnestics Society Conference
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• 2000.09a
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• pp.492-499
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• 2000

Co-Ni-Fe-N thin films were fabricated by a N$\sub$2/ reactive rf magnetron sputtering method. The nitrogen partial pressure (P$\sub$N2/) was varied in the range of 0∼10%. As P$\sub$N2/ increases in this range, the saturation magnetization (B$\sub$s/) linearly decreases from 19.8 kG to 14 kG and the electrical resistivity ($\rho$) increased from 27 to 155 ${\mu}$$\Omega$cm. The coercivity (H$\sub$c/) exhibits the minimum value at 4% of P$\sub$N2/. The magnetic anisotropy (H$\sub$k/) are in the range of 20∼50 Oe. High frequency characteristics of (Co$\sub$22.2/Ni$\sub$27.6/Fe$\sub$50.2/)$\sub$100-x/N$\sub$x/ films are excellent in the range of 3∼5% of P$\sub$N2/. Especially the effective permeability of the film fabricated at 4% of P$\sub$N2/ is 800, which is maintained up to 600 MHz. This film also shows Bs of 17.5 kG, H$\sub$c/ of 1.4 Oe, resistivity of 98 $\Omega$cm and H$\sub$k/ of about 25 Oe. Also, the corrosion resistance of (Co$\sub$22.2/Ni$\sub$27.6/Fe$\sub$50.2/)$\sub$100-x/N$\sub$x/ were improved with the increase in N concentration.

• Journal of Magnetics
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• v.9 no.3
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• pp.79-82
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• 2004

The structure and magnetic properties of Fe-Ni-N/Cu multilayered films, prepared by the DC magnetron sputter, as a function of different thicknesses of Fe-Ni-N ($t_{FeNiN}$) and Cu ($t_Cu$) layers have been studied by the methods of x-ray diffraction and measurement of magnetic moment. It has been found that the enhancement of (200) orientation in Fe-Ni-N layers is observed at the ratio of layer thickness with about $t_{FeNiN}/t_{Cu}$ $\underline{\simeq}$ 3.75. The reduction of magnetization due to the formation of interdiffusion near the interface is explained by means of the dead layer model. The temperature dependence of magnetization exhibits the feature of Blochs $T^{\frac{2}{3}}$ law. The layer thickness dependence of Curie temperature has been discussed by critical temperature theory of Heisenberg model.

• Journal of the Korean Magnetics Society
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• v.15 no.4
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• pp.226-230
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• 2005

In this research, magnetic properties and annealing effects of the spin valve structures were investigated, which have Ta underlayer deposited with Ar and $N_2$ gas mixture. Also, TaN underlayer as a diffusion barrier and the substrate were investigated. The structure of the spin valve was Si($SiO_2$)/Ta(TaN)/NiFe/CoFe/Cu/CoFe/FeMn/Ta. Deposition rate was decreased and resistivity and roughness of the TaN films were increased as the $N_2$ gas flow was increased. The XRD results after high temperature annealing showed that Silicides were created in Si/Ta layer, but not in Si/TaN layer. Magnetoresistance ratio (MR) and exchange coupling field ($H_{ex}$) were decreased when the $N_2$ gas flow was increased over 4.0 sccm. The MR of the spin valves with Ta and TaN films deposited with up to 4.0 sccm of $N_2$ gas flow was increased about $0.5\%$ until the annealing temperature of up to $200^{\circ}C$ and then, decreased. TaN film deposited with 8.0 sccm of $N_2$ gas flow showed twice the adhesion of the Ta film. The above results indicate that with 3.0 sccm of $N_2$ gas flow during the Ta underlayer deposition, the magnetic properties of the spin valves are maintained, while the underlayer may be used as a diffusion barrier and the adhesion between the Si substrate and the underlayer is increased.

• Journal of the Korean Magnetics Society
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• v.14 no.5
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• pp.163-168
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• 2004

We prepared ultra thin film structure of Si(100)/ $SiO_2$(200 nm)/Ta(5 nm)/Ni$_{80}$Fe$_{20/(l～15 nm)}$Ta(5 nm) using an inductively coupled plasma(ICP) helicon sputter. Magnetic properties and cross-sectional microstructures were investigated with a superconduction quantum interference device(SQUID) and a transmission electron microscope(TEM), respectively. We report that NiFe films of sub-3 nm thickness show the B$_{bulk}$ = 0 and B$_{surf}$=-3 ${\times}$ 10$^{-7}$(J/$m^2$). Moreover, Curie temperature may be lowered by decreasing thickness. Coercivity become larger as temperature decreased with 0.5 nm - thick Ta/NiFe interface intermixing. Our result implies that effective magnetic properties of magnetoelastic anisotropy, saturation magnetization, and coercivity may change abruptly in nano-thick films. Thus we should consider those abrupt changes in designing nano-devices such as MRAM applications.