• 제목/요약/키워드: Fast Storage Device

검색결과 76건 처리시간 0.024초

Design of QCA Content-Addressable Memory Cell for Quantum Computer Environment (양자컴퓨터 환경에서의 QCA 기반 내용주소화 메모리 셀 설계)

  • Park, Chae-Seong;Jeon, Jun-Cheol
    • The Journal of the Convergence on Culture Technology
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    • 제6권2호
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    • pp.521-527
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    • 2020
  • Quantum-dot cellular automata (QCA) is a technology that attracts attention as a next-generation digital circuit design technology, and several digital circuits have been proposed in the QCA environment. Content-addressable memory (CAM) is a storage device that conducts a search based on information stored therein and provides fast speed in a special process such as network switching. Existing CAM cell circuits proposed in the QCA environment have a disadvantage in that a required area and energy dissipation are large. The CAM cell is composed of a memory unit that stores information and a match unit that determines whether or not the search is successful, and this study proposes an improved QCA CAM cell by designing the memory unit in a multi-layer structure. The proposed circuit uses simulation to verify the operation and compares and analyzes with the existing circuit.

Performance Analysis of Flash Translation Layer Algorithms for Windows-based Flash Memory Storage Device (윈도우즈 기반 플래시 메모리의 플래시 변환 계층 알고리즘 성능 분석)

  • Park, Won-Joo;Park, Sung-Hwan;Park, Sang-Won
    • Journal of KIISE:Computing Practices and Letters
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    • 제13권4호
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    • pp.213-225
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    • 2007
  • Flash memory is widely used as a storage device for potable equipments such as digital cameras, MP3 players and cellular phones because of its characteristics such as its large volume and nonvolatile feature, low power consumption, and good performance. However, a block in flash memories should be erased to write because of its hardware characteristic which is called as erase-before-write architecture. The erase operation is much slower than read or write operations. FTL is used to overcome this problem. We compared the performance of the existing FTL algorithms on Windows-based OS. We have developed a tool called FTL APAT in order to gather I/O patterns of the disk and analyze the performance of the FTL algorithms. It is the log buffer scheme with full associative sector translation(FAST) that the performance is best.

End-to-End Resource Management Techniques for Supporting Real-time Tasks in Mobile Devices (모바일 기기의 실시간 작업 지원을 위한 종단간 자원 관리 기술)

  • Bahn, Hyokyung
    • The Journal of the Institute of Internet, Broadcasting and Communication
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    • 제22권5호
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    • pp.43-48
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    • 2022
  • With the recent performance improvement of mobile devices as well as the emergence of various applications, not only interactive tasks but also real-time tasks are rapidly increasing. As real-time tasks have deadline requirements, resource management policies used in the conventional time-sharing systems have limitations in satisfying real-time constraints. In this paper, we examine how to efficiently manage resources while satisfying the constraints of real-time tasks through end-to-end resource management of CPU, memory, and storage when interactive and real-time tasks are executed concurrently on a mobile device. Instead of suggesting complicated resource management policies, we focus on examining the basic concepts necessary for each resource management. Specifically, we first look at basic policies such as assigning dedicated CPU cores for real-time tasks, allocating a certain working set of real-time tasks in memory, and using fast storage without context switch in I/O. We then consider how these basic policies can be adopted efficiently.

MTJ based MRAM Core Cell

  • Park, Wanjun
    • Journal of Magnetics
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    • 제7권3호
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    • pp.101-105
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    • 2002
  • MRAM (Magnetoresistive Random Access Memory) is a promising candidate for a universal memory that meets all application needs with non-volatile, fast operational speed, and low power consumption. The simplest architecture of MRAM cell is a series of MTJ (Magnetic Tunnel Junction) as a data storage part and MOS transistor as a data selection part. This paper is for testing the actual electrical parameters to adopt MRAM technology in the semiconductor based memory device. The discussed topics are an actual integration of MRAM core cell and its properties such as electrical tuning of MOS/MTJ for data sensing and control of magnetic switching for data writing. It will be also tested that limits of the MRAM technology for a high density memory.

Precision Position and Gap Control for High Density Optical Head Using Bimorph PZT (Bimorph PZT를 이용한 고밀도 광학헤드의 정밀위치 및 간극제어)

  • 권영기;홍어진;박태욱;박노철;양현석;박영필
    • Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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    • 한국소음진동공학회 2004년도 춘계학술대회논문집
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    • pp.888-893
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    • 2004
  • This paper proposed a dual actuator using bimorph PZT for information storage device based on prove array NSOM(Near-field Scanning Optical Microscopy). The gap between the media and the optical head should be maintained within the optical tolerance. Therefore, a new actuator having high sensitivity is required. Bimorph PZT, which has fast access time and high sensitivity characteristic, is suitable for this precise actuating system. This paper is focused on derivation of mathematical model of dual bimorph PZT actuator and control algorithm. Hamilton's principle was used for mathematical model. The model is verified by FEA(Finite Element Analysis), and compared with experimental results. Different control algorithms were used f3r two bimorph PZT actuating same direction and opposite direction. The gap between recording media and optical head was controlled within 20nm in experiment.

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Power Control modeling and Simulation of Hybrid Power System for Building Microgrid Connected Application

  • Yoon, Gi-Cap;Cho, Jae-Hoon;Hong, Won-Pyo
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • 제23권11호
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    • pp.84-93
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    • 2009
  • In this paper, we propose to study the possibility of using a photovoltaic system combined with a high speed micro-turbine. This hybrid system can work as stand-alone system or grid connected system as it will be a part of a micro-grid. Initially, we propose Matlab/Simulink dynamic models of photovoltaic, micro turbine systems and supercapacitor. Then, we carry out a simulation comparison of the two systems, this is, with supercapacitor and without supercapacitor bank. We show that supercapacitor bank as short-term storage device was necessary to reduce the fast fluctuation of power in the case of sensitive loads. It is verified the simulation results of Matlab/Simulink based hybrid power system represent the effectiveness of the suggested hybrid power system.

Search Performance Improvement of Column-oriented Flash Storages using Segmented Compression Index (분할된 압축 인덱스를 이용한 컬럼-지향 플래시 스토리지의 검색 성능 개선)

  • Byun, Siwoo
    • Journal of the Korea Academia-Industrial cooperation Society
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    • 제14권1호
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    • pp.393-401
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    • 2013
  • Most traditional databases exploit record-oriented storage model where the attributes of a record are placed contiguously in hard disk to achieve high performance writes. However, for search-mostly datawarehouse systems, column-oriented storage has become a proper model because of its superior read performance. Today, flash memory is largely recognized as the preferred storage media for high-speed database systems. In this paper, we introduce fast column-oriented database model and then propose a new column-aware index management scheme for the high-speed column-oriented datawarehouse system. Our index management scheme which is based on enhanced $B^+$-Tree achieves high search performance by embedded flash index and unused space compression in internal and leaf nodes. Based on the results of the performance evaluation, we conclude that our index management scheme outperforms the traditional scheme in the respect of the search throughput and response time.

Preparation of flexible energy storage device based on reduced graphene oxide (rGO)/conductive polymer composite (환원된 그래핀 옥사이드/전도성 고분자 복합체를 이용한 플렉시블 에너지 저장 매체의 개발)

  • Jeong, Hyeon Taek;Cho, Jae Bong;Kim, Jang Hun;Kim, Yong Ryeol
    • Journal of the Korean Applied Science and Technology
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    • 제34권2호
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    • pp.280-288
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    • 2017
  • Nanocarbon base materials such as, graphene and graphene hybrid with high electrochemical performances have great deal of attention to investigate flexible, stretchable display and wearable electronics in order to develop portable and high efficient energy storage devices. Battery, fuel cell and supercapacitor are able to achieve those properties for flexible, stretchable and wearable electronics, especially the supercapacitor is a promise energy storage device due to their remarkable properties including high power and energy density, environment friendly, fast charge-discharge and high stability. In this study, we have fabricated flexible supercapacitor composed of graphene/conductive polymer composite which could improve its electrochemical performance. As a result, specific capacitance value of the flexible supercapacitor (unbent) was $198.5F\;g^{-1}$ which decreased to $128.3F\;g^{-1}$ (65% retention) after $500^{th}$ bending cycle.

The Influence of $O_2$ Gas on the Etch Characteristics of FePt Thin Films in $CH_4/O_2/Ar$ gas

  • Lee, Il-Hoon;Lee, Tea-Young;Chung, Chee-Won
    • Proceedings of the Korean Vacuum Society Conference
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    • 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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    • pp.408-408
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    • 2012
  • It is well known that magnetic random access memory (MRAM) is nonvolatile memory devices using ferromagnetic materials. MRAM has the merits such as fast access time, unlimited read/write endurance and nonvolatility. Although DRAM has many advantages containing high storage density, fast access time and low power consumption, it becomes volatile when the power is turned off. Owing to the attractive advantages of MRAM, MRAM is being spotlighted as an alternative device in the future. MRAM consists of magnetic tunnel junction (MTJ) stack and complementary metal- oxide semiconductor (CMOS). MTJ stacks are composed of various magnetic materials. FePt thin films are used as a pinned layer of MTJ stack. Up to date, an inductively coupled plasma reactive ion etching (ICPRIE) method of MTJ stacks showed better results in terms of etch rate and etch profile than any other methods such as ion milling, chemical assisted ion etching (CAIE), reactive ion etching (RIE). In order to improve etch profiles without redepositon, a better etching process of MTJ stack needs to be developed by using different etch gases and etch parameters. In this research, influences of $O_2$ gas on the etching characteristics of FePt thin films were investigated. FePt thin films were etched using ICPRIE in $CH_4/O_2/Ar$ gas mix. The etch rate and the etch selectivity were investigated in various $O_2$ concentrations. The etch profiles were studied in varying etch parameters such as coil rf power, dc-bias voltage, and gas pressure. TiN was employed as a hard mask. For observation etch profiles, field emission scanning electron microscopy (FESEM) was used.

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Anticipatory I/O Management for Clustered Flash Translation Layer in NAND Flash Memory

  • Park, Kwang-Hee;Yang, Jun-Sik;Chang, Joon-Hyuk;Kim, Deok-Hwan
    • ETRI Journal
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    • 제30권6호
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    • pp.790-798
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    • 2008
  • Recently, NAND flash memory has emerged as a next generation storage device because it has several advantages, such as low power consumption, shock resistance, and so on. However, it is necessary to use a flash translation layer (FTL) to intermediate between NAND flash memory and conventional file systems because of the unique hardware characteristics of flash memory. This paper proposes a new clustered FTL (CFTL) that uses clustered hash tables and a two-level software cache technique. The CFTL can anticipate consecutive addresses from the host because the clustered hash table uses the locality of reference in a large address space. It also adaptively switches logical addresses to physical addresses in the flash memory by using block mapping, page mapping, and a two-level software cache technique. Furthermore, anticipatory I/O management using continuity counters and a prefetch scheme enables fast address translation. Experimental results show that the proposed address translation mechanism for CFTL provides better performance in address translation and memory space usage than the well-known NAND FTL (NFTL) and adaptive FTL (AFTL).

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