• Journal of the Optical Society of Korea
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• v.6 no.3
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• pp.83-86
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• 2002

Nanoscopic emission from periodic nano-hole arrays in thick metal films is studied experimentally. The experiments give direct evidence for SP excitations in such structures. We show that the symmetry of the emission is governed by polarization and its shape is defined the interference of SP waves of different diffraction orders. Near-Held pattern analysis combined with the far-Held reflection and transmission measurements suggests that the SP eigenmodes of these arrays may be understood as those of ionic plasmon molecules.

• Journal of the Korean Physical Society
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• v.73 no.10
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• pp.1495-1501
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• 2018

We have developed an extended three-dimensional free-electron laser (3D FEL) code with source-dependent expansion to calculate the intensity of the radiation field and the spot size in a free-electron laser oscillator. The effect of the wiggler field errors was evaluated for the case of a planar wiggler generated by a magnet stack with parabolic shaped pole faces by using the extended three-dimensional equations in a free-electron laser oscillator based on the proposed FEL facility which is to be operated in the far-infrared and the infrared regions. The radiation spot size due to the wiggler field errors also have been analyzed for wiggler errors of ${\Delta}B/B=0.0$, 0.03, 0.06 and 0.09% at z = 1 m and z = 2 m. The effect of the diffraction of radiation field due to the wiggler field errors of ${\Delta}B/B=0.0$ and ${\Delta}B/B=0.09%$ at 200 passes was evaluated by using the extended 3D code that we developed. The variation of the curvature of the phase front and the effect of the radiation field intensity due to the wiggler field errors were also evaluated for B = 0.5 T and B = 0.7 T with the wiggler error of ${\Delta}B/B=0.09%$ at 200 passes and the results were compared to those of without errors. The intensity of the radiation, behavior of the radiation spot size and the variation of the curvature of the phase were highly sensitive to the wiggler error of ${\Delta}B/B$ > 0.09%, but were less sensitive to the wiggler errors for ${\Delta}B/B$ < 0.09% in a free-electron laser (FEL) oscillator based on the proposed FEL facility.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.8 s.350
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• pp.1-5
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• 2006

At-wavelength inspection system of extreme Ultra-violet lithography was developed and the inspection results were compared with the optical mask inspection system by cross correlation experiments. In at-wavelength EUV mask inspection system, a raster scan of focused euv light is used to illuminate euv light to mask blank and specularly and non-specularly reflected euv light are detected by photo diode and microchannel plate. The cross correlation results between at-wavelength inspection tool and optical inspection tool shows strong correlation. Far-field scattering fringe pattern from programmed phase and opqque defect, which were detected by phosphor plate and CCD camera shows that distinct diffraction fringes were observed with fringe spacing dependent on the defect size.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2003.11a
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• pp.536-540
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• 2003

A new concept of adaptive focusing, using a Rotman lens, is presented in this paper. A Rotman lens is a microwave lens which is able to focus microwave power on its focal arc or generate multiple beams. By adding the array of phase shifters between a Rotman lens and antenna elements, the wavefront can be adaptively modulated to focus objects distributed in short range rather than far-field zone. From the optical point of view, the propagations of the lens have been simplified from the Fresnel diffraction integral to the Fourier transform. Using Fourier Transform, a beam propagation method has been developed to show improvement of the resolution by controlling wavefront of wave propagating from an aperture-type antenna array. The beam width(or spot size) and intensity have been calculated for a focused beam propagating from an array having $10{\lambda}$ of its size. For the beam with $20{\lambda},\;30{\lambda}$, and $50{\lambda}$ of geometrical focal length, the half-power beamwidth (spot size) is about $1.1{\lambda},\;1.3{\lambda}$, and $1.9{\lambda}$, respectively.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.17 no.5
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• pp.179-186
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• 2007

Single crystal $CdGa_2Se_4$ layers were grown on a thoroughly etched semi-insulating GaAs(100) substrate at $420^{\circ}C$ with the hot wall epitaxy(HWE) system by evaporating the polycrystal source of $CdGa_2Se_4$ at $630^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of single crystal $CdGa_2Se_4$ thin films measured with Hall effect by van der Pauw method are $8.27{\times}10^{17}cm^{-3},\;345cm^2/V{\cdot}s$ at 293 K, respectively. The photocurrent and the absorption spectra of $CdGa_2Se_4/SI$(Semi-Insulated) GaAs(100) are measured ranging from 293 K to 10 K. The temperature dependence of the energy band gap of the $CdGa_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation $E_g(T)=2.6400eV-(7.721{\times}10^{-4}eV/K)T^2/(T+399K)$. Using the photocurrent spectra and the Hopfield quasicubic model, the crystal field energy(${\Delta}cr$) and the spin-orbit splitting energy(${\Delta}so$) far the valence band of the $CdGa_2Se_4$ have been estimated to be 106.5 meV and 418.9 meV at 10 K, respectively. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1^-},\;B_{1^-},\;and\;C_{11}-exciton$ peaks.

• The Journal of Engineering Research
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• v.1 no.1
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• pp.5-14
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• 1997

The purpose of thesis is to analyze the radiation characteristics of an offset gregorian antenna in order to design the satellite-loaded antenna. In order to compute the radiation pattern of the sub-reflector, the reflected wave is obtained by GO(Geometric Optics) at an arbitrary shaped sub-reflector. Then the total radiation EM wave is obtained by summing the diffracted fields obtained by UTD(Uniform Geometrical Theory of Diffraction) and the GO fields. In order to calculate the far field radiation pattern of the main reflector, the radiation integral equation is derived from the induced current density on reflector surface using PO(Physical Optics). The kernel is expanded in terms of Jacobi-Bessel series for increasing the computational efficiency, then the modified radiation integral is represented as the double integral equation independent of observation points. When the incident fields are assumed to be x-or y-polarized field, the characteristics of radiation patterns in the gregorian antenna is analyzed in case of the main reflector having the focal length of 62.4$\lambda$, diameter of 100$\lambda$, and offset height of 75$\lambda$, and the sub-reflector having the eccentricity of 0.501, the inter focal length og 32.8$\lambda$, the horn axis angle of $9^{\circ}$ and the half aperture angle of $15.89^{\circ}$. The cross-polarized level and side lobe level in the offset geogorian reflector are reduced by 30dB and 10dB, respectively, in comparison with those of the offset parabolic antenna.