• Journal of the Korean Vacuum Society
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• v.12 no.4
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• pp.214-217
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• 2003

In this study, we prepared ZnO thin film on $SiO_2$/Si substrate by FTS (Facing Targets Sputtering) apparatus which can reduce damage on the thin film because the bombardment of high-energy Particles such as ${\gamma}$-electron can be restrained. And, properties of thin filnl grown with ZnO buffer-layer which can be suppress initial growth layer was investigated. The crystalline and the c-axis preferred orientation of ZnO thin film was also investigated by XRD. As a result, we noticed that the ZnO thin film has a good crystallographic characteristic at thickness of ZnO buffer layer 10, 20 nm and working pressure 1 mTorr.

• Journal of the Korean Magnetics Society
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• v.2 no.1
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• pp.22-28
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• 1992

Barium ferrite thin films were reactively deposited with Fe and BaO composite targets by a facing tergects sputtering unit. When thermally oxidized silicon wafers were used as substrates, minimum substrate heating of $750^{\circ}C$ was necessary for the perfect c-axis alignment in barium ferrite films. To lower the critical substrate temperature for the good c-axis alignment, such seed layers as ZnO, ${\alpha}-Fe_{2}O_{3}$ and ${\gamma}-Fe_{2}O_{3}$ were tested. The excellent c-axis algnment of BaM was obtained at a substrate temperature of $600^{\circ}C$ on ZnO seed layer whose (002) plane was parallel to the substrate surface. The magnetic properties of the BaM film showed saturation magnetization of 295 emu/cc, perpendicular coercivity of 1.7 kOe and squareness of 0.75. Optimum deposition rate of $230\;{\AA}/min$ was obtained with the composite target and this was 5 to 20 times higher than those of other investigators with oxide targets.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.2
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• pp.114-120
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• 2012

In this research, we prepared Ga doped zinc oxide(ZnO:Ga, GZO) targets each difference sintering temperature $700^{\circ}C$, $800^{\circ}C$, and doping rate 1 wt.%, 2 wt.%, 3 wt.%. The characteristics of thin film on glass substrates which deposited by facing target sputtering in pure Ar atmosphere are reported. Ga doped zinc oxide film is attracted material through low resistivity, high transmittance, etc. When prepared target powder's structure was investigated by scanning electron microscope, densification and coarsening by driving force was observed. For each ZnO:Ga films with a $Ga_2O_3$ content of 3 wt.% at input power of 45W, the lowest resistivity of $9.967{\times}10^{-4}{\Omega}{\cdot}cm$ ($700^{\circ}C$) and $9.846{\times}10^{-4}{\Omega}{\cdot}cm$ ($800^{\circ}C$) was obtained. the carrier concentration and mobility were $4.09{\times}10^{20}cm^{-3}$($700^{\circ}C$), $4.12{\times}10^{20}cm^{-3}$($800^{\circ}C$) and $15.31cm^2/V{\cdot}s(700^{\circ}C)$, $12.51cm^2/V{\cdot}s(800^{\circ}C)$, respectively. And except 1 wt.% Ga doped ZnO thin film, average transmittance of these samples in the range 350-800 nm was over 80%.

• Korean Journal of Materials Research
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• v.21 no.1
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• pp.28-33
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• 2011

This paper describes the fabrication of AlN thin films containing iron and iron nitride particles, and the magnetic and electrical properties of such films. Fe-N-Al alloy films were deposited in Ar and $N_2$ mixtures at ambient temperature using Fe/Al composite targets in a two-facing-target DC sputtering system. X-ray diffraction results showed that the Fe-N-Al films were amorphous, and after annealing for 5 h both AlN and bcc-Fe/bct-$FeN_x$ phases appeared. Structure changes in the $FeN_x$ phases were explained in terms of occupied nitrogen atoms. Electron diffraction and transmission electron microscopy observations revealed that iron and iron nitride particles were randomly dispersed in annealed AlN films. The grain size of magnetic particles ranged from 5 to 20 nm in diameter depending on annealing conditions. The saturation magnetization as a function of the annealing time for the $Fe_{55}N_{20}Al_{25}$ films when annealed at 573, 773 and 873 K. At these temperatures, the amount of iron/iron nitride particles increased with increasing annealing time. An increase in the saturation magnetization is explained qualitatively in terms of the amount of such magnetic particles in the film. The resistivity increased monotonously with decreasing Fe content, being consistent with randomly dispersed iron/iron nitride particles in the AlN film. The coercive force was evaluated to be larger than $6.4{\times}10^3Am^{-1}$ (80 Oe). This large value is ascribed to a residual stress restrained in the ferromagnetic particles, which is considered to be related to the present preparation process.