• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1618-1620
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• 1996

A variety of processing techniques have been reported for preparing high quality functional thin films, and one of the most successful techniques has been known to be the rf FTMS(facing targets magnetron sputtering) method. The rf FTMS has preferable advantages to reduce the resputtering effect when depositing thin films and efficiently to oxidize the grown films by oxygen radicals. The resulting optimum conditions were found to be the rf power 50 W and the substrate position of 20 mm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.283-284
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• 2005

Al electrode for OLED was deposited by Facing Targets Sputtering(FTS) system which can reduce the damage of organic layer. The Al thin films were deposited on the slide glass as a function of working gas such as Ar, Kr or mixed gas. The film surface image was observed by AFM and SEM. In the results, when Al thin film were deposited using mixed gas, the surface morphology was improved in some region.

• Journal of the Korean Vacuum Society
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• v.8 no.1
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• pp.26-30
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• 1999

Sputter deposited Co-Cr thin films been developed continuously as one of the major candidates for high density recording media. In this study, Co-26at%Cr thin films with c-axis oriented normal to substrate surface were prepared by a improved facing targets sputtering system. We find that the effect of microstructural changes of the sputtered Co-Cr thin films on magnetic properties and changes of crystal orientation due to the variation of substrate temperature.

• Journal of Magnetics
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• v.18 no.2
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• pp.155-158
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• 2013

FeCoB films were being prepared on a Ru underlayer by using the oblique incidence of sputtered and back-scattered particles which have a high in-plane magnetic anisotropy field $H_k$ above 400 Oe. It is suitable to attain such deposition condition when facing targets sputtering system. The in-plane X-ray diffraction analysis clarified that there is anisotropic residual stress which is the origin of the high in-plane magnetic anisotropy. The directional crystalline alignment and inclination of crystallite growth were also observed. Such anisotropic crystalline structures may affect the anisotropic residual stress in the films. The B content of 5.6 at.% was appropriate to induce such anisotropic residual stress and $H_k$ of 410 Oe in this experiment. The film with B content of 6 at.% possessed large saturation magnetization of 22 kG and high $H_k$ of 500 Oe. The film exhibited high ferromagnetic resonance frequency of 9.2 GHz.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.11a
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• pp.194-195
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• 2012

대향 타겟 스퍼터링법 (Facing Targets Sputtering)을 이용하여 저온 공정에서 ZnO 박막을 증착하였다. 이 실험에서 두 개의 타겟의 거리를 70nm로 고정하고 박막의 증착두께를 150nm로 정하였다. 인가전압을 변수로 하였을 경우 ZnO 박막의 방향성과 결정성을 XRD로 측정하고 분석하였고 OES로 플라즈마 진단을 하였다. 그 결과 인가전압의 증가에 따라 결정성은 증가하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.403-404
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• 2008

In this study, we prepared ITO thin film on glass, polycarbonate (PC) and polyethersulfone (PES) substrate in Facing Targets sputtering (FTS) system. Properties of as-deposited thin films's aging change were investigated as a function of time placed in the air. The electrical and optical properties of as-deposited thin films were employed by a four point probe and an UV/VIS spectrometer, an X-ray diffractometer (XRD), a Field Emission Scanning Electron Microscope(FESEM) and a Hall Effect measurement. As a result, as time went by, transmittance of all films did not change but resistivity of films was decreasing.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.7
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• pp.793-796
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• 2004

In order to improve c-axis crystalline orientation and high perpendicular coercivity of deposited ${Co}_77{Cr}_20{Ta}_3$perpendicualr recording layer, Two step method was investigated using a Facing Targets Sputtering System(FTS). The ${\Delta\theta}_50$ of ${Co}_77{Cr}_20{Ta}_3$recording layer deposited on seedlayer prepared at Room Temperature was as low as $5^\circ$, while that of the recording layer without seedlayer was about 11$^{\circ}$. The Two-Step method using ${Co}_77{Cr}_20{Ta}_3$seedlayer prepared at Room Temperature was shown to be very effective in controling the c-axis orientation of ${Co}_77{Cr}_20{Ta}_3$ recording layer with thin thickness.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.309-312
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• 1997

The Ce-Cr(-Ta) film are one of the most suitable candidates for perpendicular magnetic media. the control of the preparation conditions, such as Ar gas pressure P$\_$Ar/ substrates temperature T$\_$s/, films thickness $\delta$, deposition speed R$\_$d/, is considered to be important to attain ultra high density recording far perpendicular magnetic recording media. In this study, the Co-Cr thin films and Co-Cr-Ta thin films were deposited on the glass side substrates by using Facing Targets Sputtering apparatus(FTS). Crystallographic characteristics and magnetic characteristics were evaluated by X-ray diffractometry(XRD), Vibrating Sample Magnetometer(VSM) respectively.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.1367-1368
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• 2007

We prepared Zinc Oxide thin films introducing Ag layer on glass substrates at room temperature by using facing targets sputtering (FTS) method. In order to obtain good electrical properties, Ag layer was introduced. Ag with various thickness of thin films were used as intermediate layers. The electrical, optical and crystallographic properties of thin films were investigated by Four-Point probe, UV/VIS spectrometer and XRD. From the results, we could confirm that the thickness of Ag layer changes the electrical and optical performances of the multilayers.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.217-217
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• 2010

새로운 물질의 투명전극 제작을 위해 대향타겟식 스퍼터링 (Facing Targets Sputtering, FTS)법을 이용하여 유리 기판위에 AZO와 GZO 이종타겟을 사용하여 유리 기판 위에 GAZO 박막을 제작하였다. FTS는 두 타겟이 서로 마주보는 구조로 인해 서로 다른 종류의 타겟을 장착하여 새로운 물질의 박막을 제작하는데 있어 용이하고, 타겟 뒷면에 위치한 영구자석으로 인해 타겟으로부터 방출되는 2차 전자 등을 구속하여 고밀도 플라즈마를 형성함으로서 고품위 박막의 제작이 가능하다. 본 연구에서는 투입 전력에 따라 제작된 GAZO 박막의 전기적, 광학적 및 구조적 특성 변화를 살펴보았다. 특성 평가는 UV/VIS spectrometer, Hall measurement, X-ray diffractometer (XRD), Atomic Force Microscope (AFM), Field Emission Scanning Electron Microscopy (FESEM) 을 이용하여 분석하였다. 그 결과 제작된 GAZO 박막은 비저항 $4.3\;{\times}\;10^{-4}\l;{\Omega}-cm$, 가시광 영역에서 투과율 80% 이상을 나타내는 것으로 분석되었다.