• Proceedings of the KIEE Conference
• /
• 1995.11a
• /
• pp.541-543
• /
• 1995

We propose the improved threshold current ratio method to determine the reflectivity of coated facets. The carrier recombination time used in the improved threshold current ratio method depends on the value of facet reflectivities. However, the carrier recombination time used in the conventional threshold current ratio method is constant regardless of facet reflectivities. The difference between the results of the two methods increases as the reflectivity of a coated facet decreases.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.37 no.11
• /
• pp.36-42
• /
• 2000

We calculate the facet reflectivity as a function of the waveguide width of buried channel waveguides using the angular spectrum method and the field profiles obtained by the effective index method, the variational method and the modified variational method, respectively and discuss the results. As the waveguide width increases, the facet reflectivity of buried channel waveguides approaches to that of slab waveguides. As the waveguide width decreases, the facet reflectivity of quasi-TE mode decreases from that of slab waveguides, while that of quasi-TE mode increases from that of slab waveguides. The variation of the facet reflectivity of quasi-TE mode as a function of waveguide width is much larger than that of quasi-TM mode. When the aspect ratio is one, the difference between the facet reflectivity of quasi-TE mode and that of quasi-TM mode using the variational method and the modified variational method is negligible, while the difference between the facet reflectivity of quasi-TE mode and that of quasi-TM mode using the effective index method is large. In the case of quasi-TE mode, the facet reflectivity using the angular spectrum method and the field profiles obtained by the modified variational method could be more accurate than that obtained by the effective method. In the case of quasi-TM mode, the facet reflectivities obtained by the various methods are almost the same.

• Proceedings of the Optical Society of Korea Conference
• /
• 1991.06a
• /
• pp.203-208
• /
• 1991

We present an analytic equation for the reflectivity spectrum of a Bragg reflector in terms of the front mirror reflectivity, due to the refractive index difference between the refractive index of outside medium and the average refractive index of Bragg reflector structures, and the reflectivity of a Bragg reflector calculated by the coupled wave method. We show that even Fresnel reflection causes the reflectivity spectrum of a bragg reflector to be very different from that of Bragg reflectors calculated by the coupled wave method. The reflectivity spectrum of a Bragg reflector is dramatically changed because the interference effect between the reflected wave from the front facet and that from the Bragg reflector is changed due to the difference of a phase change from a Bragg reflector when the sequence of layers in a Bragg reflector is changed.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.38 no.9
• /
• pp.634-642
• /
• 2001

We calculate the facet reflectivity of buried channel waveguides and ridge waveguides as a function of the waveguide width for various thicknesses using the angular spectrum method and the two dimensional field profiles obtained by the variational method (VM) and the effective index method (EIM). The variation of the reflectivity of buried channel waveguides as a function of the waveguide width is large, while that of ridge waveguides is very small. The accuracy of the field profiles necessary for the calculation of the facet reflectivity using the angular spectrum method greatly affects that of the facet reflectivity. The difference between the exact reflectivity and that using EIM increases as the waveguide width and thickness decreases due to the inaccuracy of the field profiles obtained by EIM. However, the difference between the exact reflectivity and that using VM is smaller than that using EIM regardless of waveguide width and thickness. The difference between the facet reflectivities u sing EIM and VM is small in the area where the EIM works very well.

• Korean Journal of Optics and Photonics
• /
• v.11 no.5
• /
• pp.340-346
• /
• 2000

Traveling wave type semiconductor optical amplifiers integrated with spot-size-converter (SSC-TW-SOA) have been extensively studied for the improvement of coupling effiClency With single-mode fiber and fO! the cost reducClon 111 a packaging In tlIis paper the slructural dependence of the spot-slZe-converter on the effective facet reflectlvllY $R_{eff}$ was experimentally as well as thcoretienlly mvestlgated. It was shown that not only a sufficient mode-conversion in a sse region along the latersl and tran~verse directions but also an introductIOn of angled-facet were very essential in order to reduce $R_{eff}$ Very small ripple less than 0.1 dB in an amplified spontaneous emission spectrum was observed with the fabncated SSC-lW-SOA which consists of the wrndow length of $20\mu\textrm{m}$, facet angle of $7^{\circ}$, and antlrelleetioll-coated facet of ] % reflectivity.tivity.

• Korean Journal of Optics and Photonics
• /
• v.14 no.3
• /
• pp.298-305
• /
• 2003

We have calculated the single mode yield of index-coupled (IC) DFB lasers above threshold for several kL, and facet reflectivity combinations, and investigated the correlation between those results and the single mode yield as a function of f number at the threshold. As a result, there is little correlation between the single mode yield above threshold and the single mode yield as a function of f number at the threshold. The single mode yields above threshold for kL of 0.8 and 1.25 is larger than those for kL, of 2 and 3 due to the spatial hole burning effect. Also, we have investigated the effect of the reflectivity of the AR facet on the single mode yield for AR-HR and AR-CL combinations. For AR-HR combinations, the single mode yield increases as the reflectivity of the AR facet decreases. However, for AR-CL combinations, the reflectivity of the AR facet for the largest single mode yield exists. In the single mode yield calculations for IC DFB lasers in this paper, the single mode yield for kL of 0.8 with AR(1％)-HR combination is largest above threshold.

• Korean Journal of Optics and Photonics
• /
• v.15 no.2
• /
• pp.149-157
• /
• 2004

We have calculated the power extraction efficiency and the lasing wavelength distribution of complex-coupled(CC) DFB lasers above threshold for various｜$\chi$L｜ and facet reflectivity combinations, and we have compared the results with those at threshold. Also, we have investigated the effect of coupling coefficient ratio(CR) and the reflectivity of AR facet on the power extraction efficiency and the lasing wavelength distribution. At threshold, the single mode yield as a function of power extraction efficiency of in-phase(IP) CC DFB lasers is the same as that of anti-phase(AP) CC DFB lasers. Above threshold, however, the single mode yield as a function of power extraction efficiency of IP CC DFB lasers is much larger than that of AP CC DFB lasers. For IP CC DFB lasers, AR-HR combination has high single mode yield and large power extraction efficiency compared to other facet combinations. IP CC DFB laser with AR-HR combination for ｜$\chi$L｜of 0.8 has the highest single mode yield and largest power extraction efficiency above threshold among the cases considered. For AR-HR combination, as CR increases and the reflectivity of AR facet decreases, both single mode yield and power extraction efficiency increase due to the reduction of the spatial hole burning effect. For AR-HR combination, the lasing wavelength of CC DFB laser has distributed over the stopband of DFB. As CR increases, the lasing wavelength concentrates on the long wavelength side for IP CC DFB laser, while on the short wavelength side for AP CC DFB laser. As ｜$\chi$L｜ increases, the width of the wavelength distribution decreases and the lasing wavelength moves to the long wavelength side.

• Korean Journal of Optics and Photonics
• /
• v.17 no.6
• /
• pp.548-555
• /
• 2006

We investigate the effect of the reflectivity of both facets and the phase of a phase tuning section on the self-pulsation (SP) characteristics of multisection index-coupled (IC) DFB lasers composed of two index-coupled DFB sections and a phase tuning section between them in terms of yield. In the case of weak coupling strength, as the reflectivity of both facets increases, the effect of reflected fields from both facets and the other DFB section on the mode characteristics of one DFB section increases. Thus the number of mode hoping increases and yield decreases for the variation of phases of both facets. In the case of strong coupling strength, as the reflectivity of both facets increases, the spatial hole burning effect increases, so that the yield decreases. The maximum yield and the range of the phase of a phase tuning section with yield more than 40% decrease as the facet reflectivity increases irrespective of coupling strength. As the coupling strength increases, the variation of yield for the variation of the phase of a phase tuning section increases and the variation of the phase of a phase tuning section with the maximum yield for the variation of the reflectivity of both facets decreases. The yield characteristics of the cases with the coupling strengths of 2 and 3 are better than those with the coupling strengths of 1.2 and 4.

• Korean Journal of Optics and Photonics
• /
• v.10 no.6
• /
• pp.524-526
• /
• 1999

It is observed that the mode spacing of an cxternal cavity semiconducror laser can be altered dramatically by the insertion of an intracavity etalon. 111e mode spacing is decreased as a function of etalon's reflectivity and this effect is quantitatively explained by an analysis of resonant modes. We abo show that this effect provides a precise and convenient alternative for determining the coating reflectivity of a high reflectivity etalon. talon.

• Current Optics and Photonics
• /
• v.4 no.6
• /
• pp.461-465
• /
• 2020

A dual-mode laser terahertz source consisting of two in-line distributed Bragg reflector (DBR) laser diodes (LD) is proposed. It is less susceptible to residual reflections from facets than an in-line dual-mode distributed feedback (DFB) LD. The characteristics of the proposed terahertz source are theoretically investigated using a split-step time-domain simulation. It is shown that terahertz waves of frequencies from 385 GHz to 1725 GHz can be generated by appropriate thermal tuning of two DBR LDs. The dual-mode DBR LD terahertz source exhibits good spectral quality for residual facet reflectivity below 0.02, but facet reflectivity of the in-line dual-mode DFB LD terahertz source should be below 0.002 to provide similar spectral quality.