• Journal of the Optical Society of Korea
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• 제20권6호
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• pp.698-703
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• 2016

We report a new all-optical flip-flop (AOFF) with a quite simple structure, using optical beating in an injection-locked Fabry-Perot laser diode (FP-LD) with optical bistability. While conventional AOFF methods using an injection-locked FP-LD require additional devices such as secondary FP-LDs or polarization controllers for reset operation, the proposed method can be implemented using only a single commercially available FP-LD with set and reset signals. The optical beating induces intensity fluctuations inside the FP-LD, and releases the locking state to the reset state. Even though we demonstrated the AOFF at 100 Mbit/s, we expect that its operation rate could extend to 10 Gbit/s, according to the limit of the FP-LD's frequency response.

• 한국정보통신설비학회:학술대회논문집
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• 한국정보통신설비학회 2008년도 정보통신설비 학술대회
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• pp.309-312
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• 2008

We study signal characteristics of the injection-locked Fabry-Perot laser diodes(FP-LDs) for the development of a costeffective WDM-PON solution. The output power and system performance of WDM-PON using injection locked FP-LD are depend on optical characteristics of injection source. The effect of optical power and polarization state of the injection source experimentally investigated. We also measured BER characteristics of the directly modulated FPLD and its power penalty at the BER of $10^{-9}$.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 추계학술대회 논문집 전기물성,응용부문
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• pp.236-238
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• 2002

A noble fiberoptic voltage sensor system utilizing an interferometric transducer has been introduced for high voltage measurement. The sensor system employs a fiberoptic Fabry-Perot interferometric strain sensor to convert voltage to displacement in an auxiliary movable electrode. The operating mechanism is based on the fact that the electrostatic force acting on the electrode system by the applied voltage results in strain variation on the Fabry-Perot interferometry. The experiment results show that the proposed voltage sensor has the potential to be extended to very high voltage system with appropriate auxiliary electrodes.

• 한국광학회:학술대회논문집
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• 한국광학회 1989년도 제4회 파동 및 레이저 학술발표회 4th Conference on Waves and lasers 논문집 - 한국광학회
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• pp.113-118
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• 1989

By using the single mode optical fiber, we fabricated Fiber-optic Fabry-Perot interferometer (FFPI). The change over a wide range in the optical path length of a FFPI is observed. The temporal movement of the interference fringes by external condition to P.Z. T) is converted to circular motion on an oscilloscope display and then recorded with a micro-computer. The two output voltages of the D/A converters are applied to X and Y terminals of oscilloscope to display circular motion on oscilloscope. Thus the direction of phase shift can be determined with observing the direction of circular motion. The variation of the optical length can be measured by calculating the angle of spot of circle with an accuracy of λ/90 wave length due to variation of temperature in this system 2.7x10-4$^{\circ}C$.

• 한국광학회:학술대회논문집
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• 한국광학회 2003년도 하계학술발표회
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• pp.194-195
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• 2003

가속도 센서는 물체의 움직임, 속도의 변화, 충격, 진동 등의 동적힘을 순시적으로 감지하여 유용한 정보로 변환시키는 장치이다. 본 논문에서는 실리콘 기계 구조물과 광섬유형 Fabry - Perot 센서(FFPI)를 사용하여 광섬유 간섭계형 가속도 센서를 제작하였으며 실리콘 구조물의 구조를 변경하여 용도에 적합한 다양한 센서를 제작할 수 있음을 보였다. 광 간섭계는 그 구조에 따라 Fabry - Perot$^{[2]}$ , Mach-Zender$^{[3]}$ , Michelson$^{[4]}$ , Sagnac$^{[5]}$ 등으로 구분되면 이러한 간섭계 중에서 Fabry - Perot 간섭계는 측정영역이 두 반사막의 거리로 정확하게 정의되며 반사막의 거리를 조절하여 좁은 영역에서의 측정이 가능하고 고감도를 갖는다. (중략)

• Journal of the Optical Society of Korea
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• 제12권4호
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• pp.359-363
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• 2008

A novel WDM-PON system delivering bidirectional 1.25-Gbps data and broadcasting data is proposed. A subcarrier signal modulates optical carriers of a Fabry-Perot-laser-diode based broadband light source to broadcast to all users. Reflective semiconductor optical amplifiers are used as modulators for the baseband data at both the optical line terminal and the remote optical network unit for a channel. Bit error rate and error vector magnitude were measured to demonstrate the proposed scheme.

• Journal of the Optical Society of Korea
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• 제17권6호
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• pp.481-485
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• 2013

A method for the measurement of the concentration of methane is experimentally demonstrated. The wavelength filter and gas cell are combined by using one Fabry-Perot etalon, which is filmed with the reflectivity of 96%. The optical broadband source is not only filtered to match the absorption wavelength of methane, but also absorbed by the methane in the same Fabry-Perot etalon. The concentration of the methane can be detected directly by measuring the transmission intensity. Compared with the conventional method, the proposed method possesses low costand high stability.

• 대한공업교육학회지
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• 제31권1호
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• pp.185-199
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• 2006

본 연구에서는 구조물이 횡방향으로 음압을 받을 경우 이를 감지하기 위하여 Fabry-Perot형 광섬유 배열 센서를 제작하고 실험하였다. 이는 한 개의 광원으로 두 개의 센서가 병렬로 연결되고 센서의 출력신호를 보기 위한 별도의 신호처리기가 필요 없는 구조이다. 횡방향 음압을 임의의 음원 주파수인 100Hz, 200Hz 및 655Hz의 주파수를 무지향성 스피커에 인가하였으며 $60cm{\times}60cm{\times}60cm$의 격자 구조물에 부착된 두 개의 배열 센서가 잡은 신호를 분석하였다. 시간 영역에서 두 개의 센서 신호는 진폭에 약간의 차이는 있으나 음원 주파수를 잘 감지함을 확인 하였다. 센서가 실제로 양단이 지지된 구조의 배열 센서를 모델링하고 그 해를 실험결과와 비교하였다. 2kHz의 음원을 배열 센서에 인가하였더니 이론 해석과 비교적 잘 일치하는 측정 결과를 얻었다.

• 한국광학회지
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• 제8권3호
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• pp.230-235
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• 1997

광섬유의 단면을 적절한 곡률의 곡면으로 가공함으로써 종래 구조에 비해 우수한 특성의 광섬유 Fabry-Peror(FP)간섭 필터를 제작할 수 있음을 이론적으로 분석하였다. 광섬유 단면의 가공된 오목거울의 곡률은 계단형 단일모드 광섬유의 도파모드를 Gaussian빔으로 가정했을 때 광섬유에서 나와 일정거리의 자유공간을 진행한 빔의 파면의 곡률과 일치하여야 하며, 이때 거울의 기울기 0.2.deg., 곡률오차 70.mu.m, 공극거리 오차 8.mu.m, 광축의 횡편차 0.5.mu.m이내의 범위에서 이상적인 배치를 벗어난 경우에도 광섬유간의 거리가 15.mu.m일 때 0.5%이하의 결합손실을 가져 종래에 비해 훨씬 간단한 새로운 구조의 광섬유 FP필터가 제작될 수 있음을 확인하였다. 마지막으로 곡면가공된 광섬유 단면의 간섭파형을 통하여 광섬유 단면을 의도된 구조로 가공할 수 있음을 보였다.

• 통합자연과학논문집
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• 제3권3호
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• pp.168-173
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• 2010

Novel porous silicon chip exhibiting dual optical properties, both Frbry-Perot fringe (optical reflectivity) and photoluminescence had been developed and used as chemical sensors. Porous silicon samples were prepared by an electrochemical etch of p-type sillicon wafer (boron-doped, <100> orientation, resistivity 1 - 10 ${\Omega}$). The ething solution was prepared by adding an equal volume of pure ethanol to an aqueous solution of HF (48% by weight). The porous silicon was illuminated with a 300 W tungsten lamp for the duration of etch. Ething was carried out as a two-electrode Kithley 2420 preocedure at an anodic current. The surface of porous silicon was characterized by FT-IR instrument. The porosity of samples was about 80%. Three different types of porous silicon, fresh porous silicon (Si-H termianated), oxidized porous silicon (Si-OH terminated), and surface-derivatized porous silicon (Si-R terminated), were prepared by the thermal oxidation and hydrosilylation. Then the samples were exposed to the wapor of various organics vapors. such as chloroform, hexane, methanol, benzene, isopropanol, and toluene. Both reflectivity and photoluminescence were simultaneously measured under the exposure of organic wapors.