• Title/Summary/Keyword: FN 스트레스

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New Method for Elimination of Comparator Offset Using the Fowler-Nordheim Stresses (Fowler-Nordheim 스트레스에 의한 MOS 문턱전압 이동현상을 응용한 비교기 옵셋 제거방법)

  • Chung, In-Young
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.46 no.3
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    • pp.1-9
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    • 2009
  • In this paper proposed a new method which adaptively eliminates comparator offsets using the threshold voltage shift by the Fowler-Nordheim stress. The method evaluates the sign of comparator offset and gives the FN stress to the stronger MOSFETs of the comparator, leading to offset reduction. We have used an appropriate stressing operation, named 'stress-packet', in order to converge the offset value to zero. We applied the method to the latch-type comparator which is prevalently used for DRAM bitline sense amplifier, and verified through experiments that offsets of the latch-type comparators are nearly eliminated with the stress-packet operations. We also discuss about the reliability issues that must be guaranteed for field application of this method.

Effects of Oral Administration of Thyroid Hormone on Physiological Activity and Growth of Black Porgy Reared in Freshwater or Seawater (담수 및 해수사육 감성돔, Acanthopagrus schlegeli의 생리활성과 성장에 미치는 갑상선 호르몬의 효과)

  • Min Byung-Hwa;Noh Gyoung-Ane;Jeong Min-Hwan;Kang Duk-Young;Choi Cheol-Young;Bang In-Chul;Chang Young-Jin
    • Journal of Aquaculture
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    • v.19 no.3
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    • pp.149-156
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    • 2006
  • Stress responses, osmoregulation and growth of black porgy reared in freshwater or seawater were investigated by supplying the feed (10 mg/kg feed) treated with the $T_3$ (3,5,3'-triiodo-L-thyronine) for 90 days. Plasma $T_3$ in black porgy reared for 60 days in freshwater with (FT) or without (FN) $T_3$, treatment was lower than that in black porgy reared in seawater with (ST) or without (SN) $T_3$ treatment. The concentration of $T_3$ in FT was significantly more than that in FN. Plasma cortisol in FT, at the same day, was 4 times higher than that in FN, whereas the differences of the hormone between ST and SN was not significant. Although the levels of plasma glucose in FN and FT tended to be lower than that in ST and SN, no differences were found between fish reared in freshwater and seawater after $T_3$ treatment. Aspartate aminotransferase (AST) and alanine aminotransferase (ALT) of black porgy reared in seawater showed no difference throughout the experimental period. However, at the beginning stages of the experiment, the plasma levels of these enzymes in FN and FT were higher than in SN and ST. Recovering of AST level to the level of SN or FT was laster in FT than in FN. However, no effects of the exogenous $T_3$ treatment on osmoregulatory capacity and growth of black porgy reared in freshwater or seawater were observed in this study.

Disturbance Minimization by Stress Reduction During Erase Verify for NAND Flash Memory (반복된 삭제/쓰기 동작에서 스트레스로 인한 Disturbance를 최소화하는 플래쉬 메모리 블록 삭제 방법)

  • Seo, Juwan;Choi, Min
    • KIPS Transactions on Computer and Communication Systems
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    • v.5 no.1
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    • pp.1-6
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    • 2016
  • This paper focuses on algorithm innovation of NAND Flash Memory for enhancing cell lifetime. During flash memory read/write/erase, the voltage of a specific cell should be a valid voltage level. If not, we cannot read the data correctly. This type of interference/disturbance tends to be serious when program and erase operation will go on. This is because FN tunneling results in tunnel oxide damage due to increased trap site on repetitive high biased state. In order to resolve this problem, we make the cell degradation by reducing the amount of stress in terms of erase cell, resulting in minimizing the cell disturbance on erase verify.

Intelligent silicon bead chip design for bio-application (바이오 응용을 위한 지능형 실리콘 비드 칩 설계)

  • Moon, Hyung-Geun;Chung, In-Young
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.16 no.5
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    • pp.999-1008
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    • 2012
  • Unlike the existing CMOS chip, ISB (Intelligent Silicon Bead) is new concept biochip equipped with optical communication and memory function. It uses the light for power of SoC CMOS and interface with external devices therefore it is possible to miniaturize a chip size and lower the cost. This paper introduces an input protocol and a design of the low power and the low area to transfer the power and the signal through a single optical signal applied from external reader device to bead chip at the same time. It is also verified through simulation and measurement. In addition, low-power PROM is designed for recording and storing ID of a chip and it is successful in obtaining the value of output according to the optical input. Through this study, a new type biochip development can be expected by solving high cost and a limit of miniaturizing a chip area problem of an existing RFID.

Dielectrical Characteristics of Ultrathin Reoxidized Nitrided Oxides by Rapid Thermal Process (급속 열처리 공정에 의한 초박막 재산화 질화산화막의 유전 특성)

  • 이용재;안점영
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.16 no.11
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    • pp.1179-1185
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    • 1991
  • Ultrathin Reoxidized Nitrided Oxides were formed by lamp heated rapid thermal annealing in oxyzen at temperatures of $1050^{\circ}C$-$1100^{\circ}C$ for 20, 40 seconds. The electrical characteristics of ultrathin films were evaluated by leakage current breakdown voltage. TDDB. FN tunneling. Nitridation and reoxidition condition dependence of charge trapping properties. i.e.. the flat band voltage shift $({\Delta}V_{FB})$ and the increase of charge-to-breakdown $(Q_{BD})$ induced by a high field stress where studied. As the results of analysis. rapid thermal reoxidation was achieved striking improvement of dielectric integrity, the charge to breakdown was increased and flat band voltage shift was reduced.

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A Study on the Development of Stress Testing Model for Korean Banks: Optimal Design of Monte Carlo Simulation and BIS Forecasting (국내은행 스트레스테스트 모형개선에 관한 연구: 최적 몬테카를로 시뮬레이션 탐색과 BIS예측을 중심으로)

  • Chaehwan Won;Jinyul Yang
    • Asia-Pacific Journal of Business
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    • v.14 no.1
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    • pp.149-169
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    • 2023
  • Purpose - The main purpose of this study is to develop the stress test model for Korean banks by exploring the optimal Monte Carlo simulation and BIS forecasting model. Design/methodology/approach - This study selects 15 Korean banks as sample financial firms and collects relevant 76 quarterly data for the period between year 2000 and 2018 from KRX(Korea Excange), Bank of Korea, and FnGuide. The Regression analysis, Unit-root test, and Monte Carlo simulation are hired to analyze the data. Findings - First, most of the sample banks failed to keep 8% BIS ratio for the adverse and severely Adverse Scenarios, implying that Korean banks must make every effort to realize better BIS ratios under adverse market conditions. Second, we suggest the better Monte Carlo simulation model for the Korean banks by finding that the more appropriate volatility should be different depending on variables rather than simple two-sigma which has been used in the previous studies. Third, we find that the stepwise regression model is better fitted than simple regression model in forecasting macro-economic variables for the BIS variables. Fourth, we find that, for the more robust and significant statistical results in designing stress tests, Korean banks are required to construct more valid time-series and cross-sectional data-base. Research implications or Originality - The above results all together show that the optimal volatility in designing optimal Monte Carlo simulation varies depending on the country, and many Korean banks fail to pass sress test under the adverse and severely adverse scenarios, implying that Korean banks need to make improvement in the BIS ratio.

Electrical Characterization of Ultrathin $SiO_2$ Films Grown by Thermal Oxidation in $N_2O$ Ambient ($N_2O$ 분위기에서 열산화법으로 성장시킨 $SiO_2$초박막의 전기적 특성)

  • Gang, Seok-Bong;Kim, Seon-U;Byeon, Jeong-Su;Kim, Hyeong-Jun
    • Korean Journal of Materials Research
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    • v.4 no.1
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    • pp.63-74
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    • 1994
  • The ultrathin oxide films less than 100$\AA$ were grown by thermal oxidation in $N_2O$ ambient to improve the controllability of thickness, thickness uniformity, process reproducibility and their electrical properties. Oxidation rate was reduced significantly at very thin region due to the formation of oxynitride layer in $N_2O$ ambient and moreover nitridation of the oxide layer was simultaneously accompanied during growth. The nitrogen incorporation in the grown oxide layer was characterized with the wet chemical etch-rate and ESCA analysis of the grown oxide layer. All the oxides thin films grown in $N_2O$, pure and dilute $O_2$ ambients show Fowler-Nordheim electrical conduction. The electrical characteristics of thin oxide films grown in $N_2O$ such as leakage current, electrical breakdown, interface trap density generation due to the injected electron and reliability were better than those in pure or dilute ambient. These improved properties can be explained by the fact that the weak Si-0 bond is reduced by stress relaxation during oxidation and replacement by strong Si-N bond, and thus the trap sites are reduced.

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