• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.156-156
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• 2011

Nanocrystalline $Ca_2Gd_8Si_6O_{26}$ (CGS) : $Sm^{3+}$ and CGS : $Tb^{3+}/Sm^{3+}$ phosphors were prepared by solvothermal reaction method for light emitting diode (LED) and field emission display (FED) applications. The XRD patterns of these phosphors confirmed their oxyapatite structure in the hexagonal lattice. The visible luminescence properties of these phosphors were investigated by exciting with ultraviolet (UV) or near-UV light and low voltage electron beam. The photoluminescence (PL) properties of $Ca_2Gd_8Si_6O_{26}$ (CGS) : $Sm^{3+}$ and CGS : $Tb^{3+}/Sm^{3+}$ phosphors were investigated as a function of $Sm^{3+}$ concentration. Cathodoluminescence (CL) properties were examined by changing the acceleration voltage. The CGS : $Sm^{3+}$ showed the dominant orange emission due to the $^4G_{5/2}{\rightarrow}^6H_{7/2}$ transition. The CGS : $Tb^{3+}/Sm^{3+}$ phosphor showed the green, white and orange emissions when excited with 275, 378, and 405 nm wavelengths, respectively. The chromaticity coordinates of these phosphors were comparable to or better than those of standard phosphors for LED or FED devices.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.590-593
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• 1999

$Y_2SiO_5$:Ce was considered as blue phosphor for field emission display because it had an excellent resistance against brightness saturation. But unfortunately It hadn't a sufficient brightness to be applied to FED. In this experiment It-$In_2O_3$, MgO and $SiO_2$ were coated onto $Y_2SiO_5$:Ce phosphor in order to improve the cathodoluminance(CL properties. The coating structures were identified to be the crystalline phases of $In_2O_3$ and MgO respectively. They had fine particle-like shape and were distributed on the surface of $Y_2SiO_5$:Ce phosphor. It was found that the CL efficiency of $Y_2SiO_5$:Ce phosphors were decreased after coatings with In20:j and MgO in voltage range from 500 V to 5 kV. But the brightness of $Y_2SiO_5$:Ce phosphor was increased after coating of 5 0 2 . And also the aging test showed that $In_2O_3$ coating improved the life time of $Y_2SiO_5$:Ce phosphor.

• 한국광학회:학술대회논문집
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• 한국광학회 2003년도 하계학술발표회
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• pp.284-285
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• 2003

Significant research interest in the growth and characterization of $Y_2$O$_3$：Eu$^{3+}$ thin films has been shown over the last few years because of the promise for applications of display devices. Although an Eu-doped oxysulfide (Eu： $Y_2$O$_2$S) which has an efficiency of 13％ has been used for a traditional cathode ray tube (CRT) red phosphor, the sulfide system is known to degrade rapidly under the high current densities needed for field-emission display (FED) technology. (omitted)d)

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.191-192
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• 2003

For the CNT-FED to be cost-effective, many efforts for the lower voltage operation have been made in the under-gate cathode structure. In this study, the effects of the frit proportion in the CNT paste, cathode electrode width, CNT-to-counter electrode gap, and the CNT length in the cathode structure were examined.

• 한국전기전자재료학회논문지
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• 제29권3호
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• pp.181-185
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• 2016

One of the important issues for fabricating the microelectronic display devices such as FED, PDP, and VFD is to obtain a high vacuum level inside the panel. In addition, sustaining the initial high vacuum level permanently is also very important. In the conventional packing technology using a tabulation method, it is not possible to obtain a satisfiable vacuum level for a proper operation. In case of FED, the poor vacuum level results in the increase of operating voltage for electron emission from field emitter tips and an arcing problem, resultantly shortening a life time. Furthermore, the reduction of a sealing process time in the PDP production is very important in respect of commercial product. The most probable method for obtaining the initial high vacuum level inside the space with such a miniature and complex geometry is a vacuum in-line sealing which seals two glass plates within a high vacuum chamber. The critical solution for the vacuum sealing is to develop a frit glass to avoid the bubbling or crack problems during the sealing process at high temperature of about $400^{\circ}C$ under the vacuum environment. In this study, the suitable frit power was developed using a mixture of vitreous and crystalline type frit powders, and a vacuum sealed CNT FED with 2 inch diagonal size was fabricated and successfully operated.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.383-384
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• 2007

The nano and micro-sized $ZnGa_2O_4$ phosphor were prepared by precipitation method and solid-state method. The luminescence, formation process and structure of phosphor powders were investigated by means of XRD, SEM and PL. The result of XRD analysis showed that $ZnGa_2O_4$ spinel structure was formed at as-prepared in the case of precipitation method. However, micro-sized phosphor was required high heating treatment to have a satisfactory spinel structure. The CL intensity of nano-sized phosphor was about 4-fold higher than that of micro-sized phosphor. The emission spectra of all $ZnGa_2O_4$ phosphor show a self activated blue emission band at around 420 nm in the wide range of 300~600 nm.

• 한국응용과학기술학회지
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• 제23권3호
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• pp.243-251
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• 2006

Field emission display(FED) is actively investigated in view of the development of full color flat-panel display, which can replace some cathode-ray tube(CRT). Thus, the development of new phosphors appropriate for FED is urgently needed and has been actively investigated. In this work, $SrTiO_3:Pr^{3+}$ phosphor was prepared by sol-gel method and the coating was applied by sol-gel method combined with sonication on these phosphor's surface into diluted precursor solution. It was found that very fine particles of coating material were formed on phosphor's surface. The luminescent intensity of $SrTiO_3:Pr^{3+}$ phosphor coated with $SiO_2$ and $Al_2O_3$ was considerably increased without any noticeable change in color chromaticity. The optimum concentration of coating material was found to be 1wt% and the optimum pH value of the solution was 10.

• 한국세라믹학회지
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• 제39권2호
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• pp.171-177
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• 2002

본 연구에서는 DC bias가 인가된 유도결합형 플라즈마 열선 화학기상증착법을 이용하여 580$^{\circ}C$의 저온에서 탄소나노튜브를 수직 배향시켰다. 성장된 탄소나노튜브의 기판으로는 강화유리 위에 촉매층으로 Ni과 전도층으로 Cr을 300/200 ${\AA}$(Ni/Cr) 증착된 것으로 R-F magnetron sputtering을 이용하여 제작하였다. 성장 시 RF power와 DC bias power는 150W와 80W이며 텅스텐 필라멘트 power는 7∼8 A로 인가하였다. 성장된 탄소나노튜브는 속이 비어 있는 다중벽으로 이루어 졌으며 성장된 탄소나노튜브 끝단에는 금속 촉매로 보이는 Ni이 존재하는 것을 알 수 있었다. 탄소나노튜브는 흑연화도가 우수하며 그에 따라 탄소나노튜브의 전계 방출 특성도 우수하게 평가되었다. 성장된 탄소나노튜브의 구동 전압은 약 3 V/${\mu}m$이었다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 D
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• pp.1517-1519
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• 1999

FED용 형광체로 사용되는 $ZnGa_2O_4$를 Glycine Nitrate Process로 합성하여 고상 반응법으로 합성한 $ZnGa_2O_4$ 분말과 비교 분석하였다. 또한 Glycine Nitrate Process로 제조시 Mn의 doping 농도를 변화시키면서 각각의 조성비에 따른 발광특성을 알아보았다. TGA 측정 결과 GNP법으로 합성된 $ZnGa_2O_4$의 경우약 $300^{\circ}C$이상에서 무게감량이 없으며, XRD 상분석 결과 연소반응 후 이미 상형성이 이루어짐을 알 수 있었다. PL측정을 결과 GP(Glycine Nitrate Process)로 제조된 $ZnGa_2O_4$ 분말의 발광효율이 고상 반응법으로 제조된 분말보다 우수하였으며, 균일하고 비표면적이 큰 단일상임이 관찰되었고, 더 작은 에너지와 시간으로 제조할 수 있는 장점이 있었다.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2005년도 춘계학술대회 논문집
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• pp.1236-1239
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• 2005

Aligned carbon nanotubes(CNTs) array were synthesized using DC plasma-enhanced chemical vapor deposition. Silicon substrate Ni-coated of 5nm thickness were pretreated by $NH_3$ gas with a flow rate of 180sccm, for 10min. CNTs were grown on the pretreated substrates at $30%\;C_2H_2:NH_3$ flow ratios for 10min. Carbon nanotubes with diameters from 60 to 80 nanometers and lengths about 2.7 micrometers were obtained. Vertical alignment of carbon nanotubes were observed by FESEM.