• Electrical & Electronic Materials
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• v.8 no.2
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• pp.204-210
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• 1995

The characteristics of the internal circuits and the load capacitance should be included to optimize the size of BiCMOS buffer. In order to get the optimum size and delay time of the BiCMOS buffer, new size plane is suggested. By using the size plane, the optimum characteristics of CMOS buffer according to the number of stages can be obtained. From this method, delaytime, .tau.$_{D}$, is obtained 2.39 nsec with $V_{\var}$=5V, $C_{L}$=5pF, W=30.mu.m and $A_{e}$=135.mu. $m^{2}$.>..>...>.

• Journal of the Korean Ceramic Society
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• v.34 no.10
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• pp.1060-1066
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• 1997

In this paper, the effects of La addition of PLZT thin film prepared by sol-gel method on the capacitor characteristics are investigated for gigabit generation DRAM applications. The addition of La on the PLZT capacitor results in a trade-off between charge storage density(Qc') and leakage current density(Jl). As La content increases, Qc' and permeability(εr) at 0V are reduced while Jl is significantly decreased. It is demonstrated that 5% La doping of PZT can substantially reduce Jl and also improve resistance to fatigue while incurring only minimal degradation of Qc'. Very low leakage current density (5×10-7 A/㎠ even at 125℃) and high charge storage density (100fC/㎛2) under VDD/2=1V conditions are achieved using 5% La doped PZT thin films for gigabit DRAM capacitor dielectrics. In addition, the fatigue and TDDB measurements indicate good reliability of the PLZT capacitors.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.347-349
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• 1999

We have fabricated insulating thin films using p-hexadecoxyphenol(p-Hp) that was formed phenol-formaldehyde resin of crosslinked structure from reaction with formaldehyde by LB technique. For fabricated MIM device, the possibility for insulating layers of electronic were investigated by electrical properties of their LB films according to crosslinking of LB films current-voltage (I-V) properties and frequency-capacitance (C-F) characteristics. We have provided evidence for the high insulating performance of phenol-formaldehyde thin films by the LB method. Conductivity of their LB films was as follows: pure water > 1 % aq. Formaldehyde > heat treatment, in the current-voltage (I-V) characteristics. It is demonstrated that insulation properties of crosslinked p-HP LB films were improved. In capacitance-frequency properties, the heat-treated p-HP LB films for crosslinking showed a low relative dielectric constant.

• Journal of Crop Science and Biotechnology
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• v.11 no.1
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• pp.75-82
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• 2008

Functional stay-green is a beneficial trait that may increase grain yield through the sustained photosynthetic competence during monocarpic senescence in cereal crops. The temporal changes of photosynthesis and related characteristics throughout the grain filling period of a stay-green japonica rice "SNU-SG1" was compared in growth chamber conditions with three high-yielding cultivars(HYVs) and their $F_1$ hybrids with SNU-SG1. SNU-SG1 exhibited a typical characteristic of functional stay-green in terms of chlorophyll degradation and photosynthetic competence during grain filling. According to the photosynthesis-light response curve measured at 10 and 35 d after heading for the flag leaf, SNU-SG1 exhibited higher initial light conversion efficiency and thus higher gross photosynthetic rate at light saturation compared to HYVs. Light saturation point was not different among genotypes, ranging from 1000 to 1500 ${\mu}mol$ photon $m^{-2}s^{-1}$. Net photosynthetic rate at light saturation($P_{max}$) of the upper four leaves in SNU-SG1 was much higher and sustained longer throughout grain-filling than HYVs and $F_1$ hybrids. The sustained high photosynthetic competence of SNU-SG1 during grain filling was ascribed to the longer maintenance of high mesophyll conductance that resulted from not only high chlorophyll content and its delayed degradation but also the slow degeneration of photosystem II(PS II) as judged by chlorophyll fluorescence($F_v/F_m$) of flag leaves. $F_1$ hybrids showed slow degeneration of photosystem II similar to the male parent SNU-SG1 while chlorophyll degradation pattern close to female parents, thus exhibiting a little higher $P_{max}$ than female parents. These results suggest that SNU-SG1 has a typical functional stay-green trait that can be utilized for increasing rice yield potential through the improved dry matter production during grain filling.

• Proceedings of the KSPS conference
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• 1996.10a
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• pp.521-528
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• 1996

This presentation explores on the perceptual characteristics of the lateral sound /l/ in CV syllables. At initial position we found that /l/ has well marked formant transitions. Then several questions arise: 1) are these formant structures dependent on the following vowel\ulcorner. 2) Are the formant transitions giving an additional cue for the identification\ulcorner Considering that the French vocalic system presents a greater variety of vowels than Spanish, several experiments were designed to verify to what extent a more extensive range of vocalic timbres contribute to the perception of /l/. Natural emissions of /l/ produced in Argentine Spanish and Canadian French CV syllables were recorded, where V was successively /i, e, a, o, u/ for Spanish and /i, e, $\varepsilon$, a, $\alpha$, o, u, y, \phi$/ for French. For each item, the segment C was maintained and V was replaced by cutting & splicing by each of the remaining vowels without transitions. Results of the identification tests for Spanish show that natural /l/ segments with low Fl and high formants F3, F4 can be clearly identified in the /i, e, u/ vowel contexts without transitions. For French subjects the combination of /l/ with a vowel without transitions reflected correct identifications for its own original vowel context in /e, $\varepsilon$, y, $\phi$/. For both languages, in all these combinations, F1 values remained rather steady along the syllable. In the case of /o, u/ very likely the F2 difference lead to a variety of perceptions of the original /l/. For example in Ilul, French subjects reported some identifications of /l/ as a vowel, mainly /y/. Our observations reinforce the importance of F1 as a relevant cue for /l/, and the incidence of the relative distance between formants frequencies of both components.

• Journal of Powder Materials
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• v.20 no.5
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• pp.376-381
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• 2013

Spherical Ti-6Al-4V powders in the size range of 250 and 300 ${\mu}m$ were uniformly doped with nano-sized hydroxyapatite (HAp) powders by Spex milling process. A single pulse of 0.75-2.0 kJ/0.7 g of the Ti-6Al-4V powders doped with HAp from 300 mF capacitor was applied to produce fully porous and porous-surfaced Ti-6Al-4V implant compact by electro-discharge-sintering (EDS). The solid core was automatically formed in the center of the compact after discharge and porous layer consisted of particles connected in three dimensions by necks. The solid core increased with an increase in input energy. The compressive yield strength was in a range of 41 to 215 MPa and significantly depended on input energy. X-ray photoelectron spectroscopy and energy dispersive x-ray spectrometer were used to investigate the surface characteristics of the Ti-6Al-4V compact. Ti and O were the main constituents, with smaller amount of Ca and P. It was thus concluded that the porous-surfaced Ti-6Al-4V implant compacts doped with HAp can be efficiently produced by manipulating the milling and electro-discharge-sintering processes.

• Journal of the Korean Institute of Telematics and Electronics
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• v.14 no.3
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• pp.25-31
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• 1977

Fe V spinels were prepared by sintering the well-ground stoichiometric mixtures of Fe O and V O at 1,10$0^{\circ}C$ under H -CO atmosphere. The activation energy for electrical conduction decreases with increasing amount of iron. The tendency of activation energy depending on the amount of iron contained clarifies that the electrical condction of the spinel is mainly due to electron hopping between Fe and Fe ions at B sites. In the experiment for negative resistance characteristics, the threshold voltage (Vth) for the samples is related to ambient temperature, thickness and raising rate of applied voltage. Vth decreases as temperature increases while Vth increases linearly with thickness and Vth increases linearly with the raising rate of applied voltage in semi-logarithmic scale. These results lead to a conclusion that current paths mainly formed by thermal breakdown are ascribed to the negative resistance phenomena. Applying this property, these vanadium iron spinels may be used for switching elements.

• Journal of the Korean Electrochemical Society
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• v.6 no.2
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• pp.158-160
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• 2003

We have reported to make nanostructured cobalt oxide electrode that have large capacitance over than 400 F/g (specific capacitance) and good cycleability. But, it had serious demerits of low voltage range under 0.5 V and low power density. Therefore, we need to increase voltage range of cobalt oxide electrode. We report here on the electrochemical properties of sol-gel-derived nanoparticulate cobalt xerogel in 1M KOH solution and aqueous polymeric gel electrolyte. In solution electrolyte, cobalt oxide electrode had over 250 F/g capacitance consisted of EDLC and pseudocapacitance. In gel electrolyte, cobalt oxide electrode had around 100 F/g capacitance. This capacitance was only electric double layer capacitance of active surface area. In solution electrolyte, potassium ion as working ion reacted with both of layers easily. However, In gel electrolyte, reacted with only surface-active layer. Itis very hard to reach resistive layer. So, we have studied on pretreatment of electrode to contain working ions easily. We'll report more details.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.93-96
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• 2001

We have reported to make nanostructured cobalt oxide electrode that have large capacitance over than 400F/g (specific capacitance) and good cycleability. But, It had serious demerits of low voltage range under 0.5V and low power density. Therefore, we need to increase voltage range of cobalt oxide electrode. we report here on the electrochemical properties of sol-gel-derived nanoparticulate cobalt xerogel in 1M KOH solution and aqueous polymeric gel electrolyte. In solution electrolyte, cobalt oxide electrode had over than 250F/g capacitance consisted of EDLC and pseudocapacitance. In gel electrolyte, cobalt oxide electrode had around l00F/g capacitance. This capacitance was only surface EDLC. In solution electrolyte, potassium ion as working ion reacted with both of layers easily. However, In gel electrolyte, reacted with only surface-active layer. Its very hard to reach resistive layer. So, we have studied on pretreatment of electrode to contain working ions easily. We'll report more details.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.93-96
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• 2001

We have reported to make nanostructured cobalt oxide electrode that have large capacitance over than 400F/g (specific capacitance) and good cycleability. But, It had serious demerits of low voltage range under 0.5V and low power density. Therefore, we need to increase voltage range of cobalt oxide electrode. we report here on the electrochemical properties of sol-gel-derived nanoparticulate cobalt xerogel in 1M KOH solution and aqueous polymeric gel electrolyte. In solution electrolyte, cobalt oxide electrode had over than 250F/g capacitance consisted of EDLC and pseudocapacitance. In gel electrolyte, cobalt oxide electrode had around 100F/g capacitance. This capacitance was only surface EDLC. In solution electrolyte, potassium ion as working ion reacted with both of layers easily. However, In gel electrolyte, reacted with only surface-active layer. Its very hard to reach resistive layer. So, e have studied on pretretmetn of electrode to contain working ions easily. We'll report more details.