• Journal of the Korean Society for Precision Engineering
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• v.16 no.10
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• pp.132-140
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• 1999

This paper treats the estimation of human impedance and their application to human-robot collaboration work. Initially, we perform an experiment at which the human becomes a slave and the robot behaves like a master having F/T sensor on its end. The human impedance expressed in terms of mass, damping, and stiffness properties are estimated based on the force data measured by F/T sensor and the commanded position data of the robot. To show the effectiveness of the estimated human impedance, we perform the second experiment at which the roles of the human and the robot are reversed. It is shown that the robot using the estimated human impedance follows the trajectory commanded by human very smoothly.

• Journal of the Korean Society of Industry Convergence
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• v.26 no.4_1
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• pp.545-551
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• 2023

In this paper, a robot automation methodology for chemical drum assembly in semiconductor industries are presented. Robot automation is essential to resolve safety issues in which operators are directly or indirectly exposed to chemicals or fumes in assembling dispense heads on chemical drums. However, the chemical drum assembling process involves complex and difficult tasks, such as mating male/female keycodes and fastening screws with large-diameter, which may be very difficult to be performed by a single-arm robot with a commercial rigid F/T sensor. In order to solve the problems, a method for assembling a chemical drum using dual-arm collaborative robot system, compliance F/T sensor, robot vision and gripper is presented.

• Journal of the Korean Institute of Telematics and Electronics T
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• v.35T no.1
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• pp.48-58
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• 1998

For the purpose of designing novel capacitance pressure sensor, several effects on sensitivity such as parasitic capacitance effects, temperature/thermal drift and leakage current have to be eleiminated. This paper proposed the experimental studies on frequency compensation method by electronic circuit technique, C-V converting method with switched capacitor and C-F converting method with schmitt trigger circuit. The third interface circuit by frequency compensation method is composed to eliminate the drift and leakage component by comparision sensing frequency with reference frequency. The signal transmission is realized by digital signal to minimize the influence of noise and high resolution is obtained by means of increasing the number of digital bits. In the fabricated high performance C-V interface, the offset voltage was not appeared, and in case of voltage source, 4.0V, feed back capacitance, 10㎊, the pressure, 0~10 ㎪, the sensitivity of C-V converter is 28 ㎷/㎪.V, the temperature drift characteristic, 0.051 %F.S./$^{\circ}C$ and C-F converter shows -6.6 Hz/pa, 0.078 %F.S./$^{\circ}C$ respectively, relatively good ones.

• Journal of the Korean Ceramic Society
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• v.41 no.2
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• pp.97-101
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• 2004

W $O_{x}$-based semiconductor type thin film gas sensor was fabricated for the detection of N $O_{x}$ by reactive d.c. sputtering method. The relative oxidation state of the deposited W $O_{x}$ films was approximately compared by the calculation of the difference of the binding energy between Ols to W4 $f_{7}$2/ core level XPS spectra in the standard W $O_3$ powder of known composition. As the annealing temperature increased from 500 to 80$0^{\circ}C$, relative oxygen contents and grain size of the sputtered films were gradually increased. As the results of sensitivity ( $R_{gas}$/ $R_{air}$) measurements for the 5 ppm N $O_2$ gas, the sensitivity was 110 and the sensor showed recovery time as fast as 200 s. The other sensor properties were examined in terms of surface microstructure, annealing temperature, and relative oxygen contents. These results indicated that the W $O_3$ thin film with well controlled structure is a good candidate for monitoring and controlling of automobile exhaust.haust.t.t.t.

• Proceedings of the KIEE Conference
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• 2003.07c
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• pp.1638-1640
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• 2003

In the recent years, UHF PD measuring technique for detecting partial discharges was proved the effective method for Gas Insulated Switchgear (GIS). However, in case of GIS with a metal flange around insulating spacer, UHF PD measurement using typical external UHF PD sensor is difficult. In this paper, a novel hole-type UHF PD sensor based on Archimedean spiral antenna theory has been proposed and realized. All spacers with metal flange have small hole in order to inject epoxy. Using the novel hole-type UHF PD sensor, it makes detection possible to PD signal that are emitted through the epoxy injection hole. Additionally, the measuring characteristic of UHF PD signals from several artificial defects in GIS and the novel ${\Phi}$-f-q pattern analysis technology are discussed.

• Proceedings of the KIEE Conference
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• 1987.07a
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• pp.244-248
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• 1987

The force/torque sensor for robot is developed. The compliance algorithm for peg-in-hole insertion task using the forec/troque sensor is developed. The system consists of an IBM PC, robot, force/torque sensor, strain meter, A/D board, and interface board. The IBM PC functions as a main processor and the robot controller as a slave processor. The sensor is constructed to measure $T_x$, $T_y$, $F_z$ which are necessary to precisely execute a peg-in-hole insertion task by SCARA type assembly robot. The outputs of sensor are analyzed. On the basis of the analysis, compliance algorithm for peg-in-hole insertion task is developed. Some comments concerning the development of wrist force/torque sensor and compliance algorithm are given.

• Journal of Sensor Science and Technology
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• v.30 no.6
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• pp.436-440
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• 2021

The impact of the gate length (L_g) on the DC and high-frequency characteristics of indium-rich In_0.8Ga_0.2As channel high-electron mobility transistors (HEMTs) on a 3-inch InP substrate was inverstigated. HEMTs with a source-to-drain spacing (L_SD) of 0.8 ㎛ with different values of L_g ranging from 1 ㎛ to 19 nm were fabricated, and their DC and RF responses were measured and analyzed in detail. In addition, a T-shaped gate with a gate stem height as high as 200 nm was utilized to minimize the parasitic gate capacitance during device fabrication. The threshold voltage (V_T) roll-off behavior against L_g was observed clearly, and the maximum transconductance (g_{m_max}) improved as L_g scaled down to 19 nm. In particular, the device with an L_g of 19 nm with an L_SD of 0.8 mm exhibited an excellent combination of DC and RF characteristics, such as a g_{m_max} of 2.5 mS/㎛, On resistance (R_ON) of 261 Ω·㎛, current-gain cutoff frequency (f_T) of 738 GHz, and maximum oscillation frequency (f_max) of 492 GHz. The results indicate that the reduction of L_g to 19 nm improves the DC and RF characteristics of InGaAs HEMTs, and a possible increase in the parasitic capacitance component, associated with T-shap, remains negligible in the device architecture.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2009.06a
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• pp.837-838
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• 2009

• Smart Media Journal
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• v.12 no.7
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• pp.27-42
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• 2023

The development of cloud services and IoT technology has radically changed the cloud environment, and has evolved into a new concept called fog computing and F2C (fog-to-cloud). However, as heterogeneous cloud/fog layers are integrated, problems of access control and security management for end users and edge devices may occur. In this paper, an F2C-based IoT smart health monitoring system architecture was designed to operate a medical information service that can quickly respond to medical emergencies. In addition, a role-based service access control technology was proposed to enhance the security of user's personal health information and sensor information during service interoperability. Through simulation, it was shown that role-based access control is achieved by sharing role registration and user role token issuance information through blockchain. End users can receive services from the device with the fastest response time, and by performing service access control according to roles, direct access to data can be minimized and security for personal information can be enhanced.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.3
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• pp.224-228
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• 2011

This research, integratable capacitive relative humidity sensor was produced using polyimide on glass substrate. Also, at the time of upper electrode formation, upper electrode grain size was affected by giving changes to sputtering condition. Through this analyzing electrical characteristics affect from capacitive relative humidity sensor was possible. Capacitance of capacitive relative humidity sensor was 330 pF, linearity of 0.6%FS and it showed less than 3% of low hysterisis. Specially, hysterisis was affected more from interface than interstitial. Also was affected by the grain size which is one of the formation condition of upper electrode.