• Journal of Chest Surgery
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• 제41권1호
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• pp.102-105
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• 2008

대혈관 사이로 주행하는 관상동맥의 이상 기시는 매우 드문 심기형으로 심근허혈이나 급사를 초래할 수 있다. 이런 기형을 교정하기 위해 몇몇 술식들이 소개되어 왔다. 우관상동맥의 이상기시 환자에서 우관상동맥의 또 다른 개구부를 만들어주는 Extended Unroofing 술식을 성공적으로 수행하였다. 술 후 3개월 째 심근허혈이나 대동맥판막역류증 없이 새로 만든 개구부는 넓게 잘 유지되었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.420-420
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• 2013

We investigated oxygen plasma effect on defect states near the interface of AlGaN/GaN High Electron Mobility Transistor (HEMT) structure grown on a silicon substrate. After the plasma treatment, electrical properties were evaluated using a frequency dependant Capacitance-Voltage (C-V) and a temperature dependant C-V measurements, and a deep level transient spectroscopy (DLTS) method to study the change of defect densities. In the depth profile resulted from the temperature dependant C-V, a sudden decrease in the carrier concentration for two-dimensional electron gas (2DEG) nearby 250 K was observed. In C-V measurement, the interface states were improved in case of the oxygen-plasma treated samples, whereas the interface was degraded in case of the nitrogen-plasma treated sample. In the DLTS measurement, it was observed the two kinds of defects well known in AlGaN/GaN structure grown on sapphire substrate, which have the activation energies of 0.15 eV, 0.25 eV below the conduction band. We speculate that this defect state in AlGaN/GaN on the silicon substrate is caused from the decrease in 2DEG's carrier concentrations. We compared the various DLTS signals with filling pulse times to identify the characteristics of the newly found defect. In the filling pulse time range under the 80 us, the activation energies changed as the potential barrier model. On the other hand, in the filling pulse time range above the 80 us, the activation energies changed as the extended potential model. Therefore, we suggest that the found defect in the AlGaN/GaN/Si structure could be the extended defect related with AlGa/N/GaN interface states.

• 한국철도학회논문집
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• 제8권2호
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• pp.111-115
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• 2005

The Study provides the technical background and calculation method f3r the long wave track defect. On high speed railway, It is necessary to manage the long wave band up to 80m track defect fur improving a riding quality. For this reason, Track recording methods for highspeed railway are used 10m and 30m recording bases, these are covered middle wave band and long wave band successfully. Extended base recording data is calculated by geometrical model and this data provides a good result for KTX riding index.

• International Journal of Precision Engineering and Manufacturing
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• 제4권6호
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• pp.12-19
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• 2003

This paper presents the effect of boundary conditions in various failure pressure models published for the estimation of failure pressure. Furthermore, this approach is extended to the failure prediction with the aid of a failure probability model. The first order Taylor series expansion of the limit state function is used in order to estimate the probability of failure associated with each corrosion defect in buried pipelines for long exposure period with unit of years. A failure probability model based on the von-Mises failure criterion is adapted. The log-normal and standard normal probability functions for varying random variables are adapted. The effects of random variables such as defect depth, pipe diameter, defect length, fluid pressure, corrosion rate, material yield stress, material ultimate tensile strength and pipe thickness on the failure probability of the buried pipelines are systematically investigated for the corrosion pipeline by using an adapted failure probability model and varying failure pressure model.

• Bulletin of the Korean Chemical Society
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• 제16권10호
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• pp.957-968
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• 1995

Generalized Multichannel Quantum Defect theory (MQDT) was implemented to the vibrational predissociation of triatomic van der Waals molecules in the previous paper [Bull. Korean Chem. Soc, 12, 228 (1991)]. Implementation was limited to the calculation of the scattering matrix. It is now extended to the calculation of the predissociation spectra and the final rotational distribution of the photofragment. The comparison of the results with those obtained by other methods, such as Golden-rule type calculation, infinite order sudden approximation (IOS), and close-coupling method, shows that the implementation is successful despite the fact that transition dipole moments show more energy dependence than other quantum defect parameters. Examination of the short-range channel basis functions shows that they resemble angle-like functions and provide the validity of the IOS approximation. Besides the validity of the latter, only a few angles are found to play the major role in photodissociation. In addition to the implementation of MQDT, more progress in MQDT itself is made and reported here.

• Journal of Chest Surgery
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• 제34권10호
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• pp.733-744
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• 2001

배경: 대동맥 축착증과 심실중격결손이 동반된 환아의 적절한 치료 방침에 대해서는 이견이 많다. 본 연구는 생후 6개월 이하의 환아에서 대동맥 축착증과 심실중격결손의 일타 완전교정 결과 및 수술방법에 따른 대동맥 축착증의 재발에 대해 알아보고자 하였다. 대상 및 방법: 1995년 1월부터 2000년 12월가지 본원에서 대동맥 축착증과 심실중격결손으로 일차 완전교정을 시행받은 생후 6개월 이하의 환아 33명을 대상으로 후향적으로 조사하였다. 환아의 평균 연령과 체중은 각각 54$\pm$37일(12일~171일)과 3.9$\pm$1.1kg(1.5~6kg)이었다. 대동맥 축착 고정은 연구 초기에는 저체온하 완전순환정지하에서 시행하였으며 최근에는 순환정지없이 무명동맥을 통한 국소 뇌관류 상태에서 시행하였다. 축착증 교정 방법은 초기에는 Extended cad-to-end anastomosis(EEEA;n=16)와 Extended side-to-side anastomosis(ESSA;n=2)를, 최근에는 Extended end-to-sidc anasto mosis(EESA;n=15)를 이용하였다 심실중격결손은 초기 16명에서는 Dacron을, 최근 17명에서는 자가 심낭편을 이용하여 폐쇄하였다. 대동맥궁 발육부전은 29명(88%)에서 있었으며 원위부 발육부전 18명, 완전형 5명, 그리고 복잡형은 6명이었다.

• Nuclear Engineering and Technology
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• 제55권6호
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• pp.2298-2304
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• 2023

Titanium alloys are expected to become one of the candidate materials for nuclear-powered spacecraft due to their excellent overall performance. Nevertheless, atomistic mechanisms of the defect accumulation and evolution of the materials due to long-term exposure to irradiation remain scarcely understood by far. Here we investigate the heavy irradiation damage in a-titanium with a dose as high as 4.0 canonical displacements per atom (cDPA) using atomistic simulations of Frenkel pair accumulation. Results show that the content of surviving defects increases sharply before 0.04 cDPA and then decreases slowly to stabilize, exhibiting a strong correlation with the system energy. Under the current simulation conditions, the defect clustering fraction may be not directly dependent on the irradiation dose. Compared to vacancies, interstitials are more likely to form clusters, which may further cause the formation of 1/3<1210> interstitial-type dislocation loops extended along the (1010) plane. This study provides an important insight into the understanding of the irradiation damage behaviors for titanium.

• 한국정보과학회논문지:소프트웨어및응용
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• 제33권7호
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• pp.605-614
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• 2006

성공적인 소프트웨어 개발은 QCD에 의해 결정되며, 그 중 Quality는 Cost와 Delivery를 결정하는 핵심요소이기도 하다. 그리고 소프트웨어의 규모와 복잡도가 증가함에 따라 quality의 조기 확보의 중요성이 점차 커지고 있다. 이러한 관점에서 개발 후 결함을 찾아내고 수정하는 것보다 결함예방을 위해 더 많은 노력을 기울여야 할 것이다. 결함 예방을 위해서는 peer review, testing과 같은 결함 식별활동과 함께 기존에 발생된 defect 에 대한 분석을 통해 발생 가능한 결함의 주업을 차단하는 활동이 필요하며, 이를 위해 기존의 품질 데이타의 조직화 및 활용이 필요하다. 소프트웨어의 품질 예방을 위한 방법으로 system safety 확보를 위해 사용되고 있는 FMEA를 활용할 수 있다. SW-FMEA(Software Fault Mode Effect Analysis)는 예측을 통해 결함을 예방하는 방법으로, 기존에는 요구사항 분석 및 설계 시 많이 활용되어 왔다 이러한 SW-FMEA는 개발 활동을 통해 측정되는 정보를 활용하여, 분석, 설계, 나아가 peer review나 testing 둥 개발 및 관리 활동에 적용하여 결함예방 (defect prevention) 의 수단으로 활용 할 수 있다. 본 논문에서는 기존에 시스템 분석, 설계에 focusing된 SW-FMEA를 변형하여 product 결합뿐 아니라, 개발과정 중 발생할 수 있는 fault를 줄일 수 있는 결함 예방 model을 제안한다.

• 한국재료학회지
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• 제9권1호
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• pp.57-64
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• 1999

The electrical conductivity of TiO$_2$ doped with 0.05~1.5mol% WO$_3$ was measured in the oxygen partial pressure range of 10\ulcorner~10\ulcorner atm and temperature range of 1100~130$0^{\circ}C$ to investigate the defect types and the electrical properties. The grain size and density were increased as the liquid phase was formed by the doped WO$_3$. The secondary phase and WO$_3$peaks at the sample doped up to 4.0 mol% were not detected from the XRD results. The data(log$\sigma$/logPo$_2$) over 110$0^{\circ}C$ were divided into the four regions. From these experimental results, we proposed the following defect regions. 1) Magneli phase(extended defect), 2) Reduced rutile region which is similar to the behavior of undoped rutile, 3) Nearly stoichiometric Ti\ulcornerW\ulcornerO$_2$region in which extra charge of W\ulcorner cation is expected to be compensated by an electron, 4) Overstoichiometric Ti\ulcornerW\ulcornerO\ulcorner region which is a metal deficiency not to be observed in pure TiO$_2$. The electrical conductivity of w-doped TiO$_2$ was influenced by the measuring temperature, oxygen partial pressure, and the dopig content.

• Journal of Periodontal and Implant Science
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• 제44권6호
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• pp.300-306
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• 2014

Purpose: A laterally positioned flap (LPF) combined with a subepithelial connective tissue graft (SCTG) is one of the conventional approaches for resolving gingival recession defects, with the advantages of flap flexibility and extended coverage of the tissue graft. However, thus far, evidence is lacking for the use of this technique for the treatment of advanced gingival recession defects. This report discusses three Miller class III cases with interproximal bone loss and wide and deep defects treated with a combination procedure of a modified laterally positioned flap (mLPF) and SCTG. Methods: mLPF combined with SCTG was performed for each case. The defect size and the degree of hypersensitivity at baseline and the final appointment in each case were documented. Results: The three cases had a mean initial defect of $7.7{\pm}1.5mm$ and a mean residual defect of $1.7{\pm}1mm$ at the 6-, 3-, and 36-month follow-up, respectively, after the root coverage surgery. The symptom of hypersensitivity was improved, and the patients were satisfied with the clinical outcomes. Conclusions: The results demonstrated that the combination of mLPF with SCTG is promising for treating these advanced cases with respect to obtaining the expected root coverage with the gingival tissue.