• Title/Summary/Keyword: Exponential function

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Soil Water Storage and Antecedent Precipitation Index at Gwangneung Humid-Forested Hillslope (광릉 산지사면에서의 선행강우지수와 토양저류량 비교연구)

  • Gwak, Yong-Seok;Kim, Su-Jin;Lee, Eun-Hyung;Hamm, Se-Yeong;Kim, Sang-Hyun
    • Korean Journal of Agricultural and Forest Meteorology
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    • v.18 no.1
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    • pp.30-41
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    • 2016
  • The temporal variation of soil water storage is important in hydrological modeling. In order to evaluate an antecedent wetness state, the antecedent precipitation index (API) has been used. The aim of this article is to compare observed soil water storage with APIs calculated by widely used four equations, to configure the relationship between soil water storage and API by a regression model for one-year(2009), and to predict the soil water storage for the next two years(2010~2011). The soil water storage was evaluated from the observed soil moisture dataset in soil depths of 10, 30, 60cm at 21 locations by TDR measurement system for 3 years. As a result, API with the exponential function among the four equations can describe the variation of the observed soil water storage. Monthly optimized parameters of the API's equations seemed to be roughly related with the (potential) evapotranspiration (PET). Using revised monthly optimized parameters of APIs considering the seasonal pattern of PET, we characterize the relationship between API and the observed soil water storage for one year, which looks better than those of other researches.

The recombination velocity at III-V compound heterojunctions with applications to Al/$_x$/Ga/$_1-x$/As-GaAs/$_1-y$/Sb/$_y$/ solar cells

  • 김정순
    • 전기의세계
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    • v.28 no.4
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    • pp.53-63
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    • 1979
  • Interface recombination velocity in $Al_{x}$G $a_{1-x}$ As-GaAs and $Al_{0.85}$, G $a_{0.15}$ As-GaA $s_{1-y}$S $b_{y}$ heterojunction systems is studied as a function of lattice mismatch. The results are applied to the design of highly efficient III-V heterojunction solar cells. A horizontal liquid-phase epitaxial growth system was used to prepare p-p-p and p-p-n $Al_{x}$G $a_{1-x}$ As-GaA $s_{1-y}$S $b_{y}$-A $l_{x}$G $a_{1-x}$ As double heterojunction test samples with specified values of x and y. Samples were grown at each composition, with different GaAs and GaAs Sb layer thicknesses. A method was developed to obtain the lattice mismatch and lattice constants in mixed single crystals grown on (100) and (111)B oriented GaAs substrates. In the AlGaAs system, elastic lattice deformation with effective Poisson ratios .mu.$_{eff}$ (100=0.312 and .mu.$_{eff}$ (111B) =0.190 was observed. The lattice constant $a_{0}$ (A $l_{x}$G $a_{1-x}$ As)=5.6532+0.0084x.angs. was obtained at 300K which is in good Agreement with Vegard's law. In the GaAsSb system, although elastic lattice deformation was observed in (111) B-oriented crystals, misfit dislocations reduced the Poisson ratio to zero in (100)-oriented samples. When $a_{0}$ (GaSb)=6.0959 .angs. was assumed at 300K, both (100) and (111)B oriented GaAsSb layers deviated only slightly from Vegard's law. Both (100) and (111)B zero-mismatch $Al_{0.85}$ G $a_{0.15}$As-GaA $s_{1-y}$S $b_{y}$ layers were grown from melts with a weight ratio of $W_{sb}$ / $W_{Ga}$ =0.13 and a growth temperature of 840 to 820 .deg.C. The corresponding Sb compositions were y=0.015 and 0.024 on (100) and (111)B orientations, respectively. This occurs because of a fortuitous in the Sb distribution coefficient with orientation. Interface recombination velocity was estimated from the dependence of the effective minority carrier lifetime on double-heterojunction spacing, using either optical phase-shift or electroluminescence timedecay techniques. The recombination velocity at a (100) interface was reduced from (2 to 3)*10$^{4}$ for y=0 to (6 to 7)*10$^{3}$ cm/sec for lattice-matched $Al_{0.85}$G $a_{0.15}$As-GaA $s_{0.985}$S $b_{0.015}$ Although this reduction is slightly less than that expected from the exponential relationship between interface recombination velocity and lattice mismatch as found in the AlGaAs-GaAs system, solar cells constructed from such a combination of materials should have an excellent spectral response to photons with energies over the full range from 1.4 to 2.6 eV. Similar measurements on a (111) B oriented lattice-matched heterojunction produced some-what larger interface recombination velocities.ities.ities.s.

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Relationship of box counting of fractured rock mass with Hoek-Brown parameters using particle flow simulation

  • Ning, Jianguo;Liu, Xuesheng;Tan, Yunliang;Wang, Jun;Tian, Chenglin
    • Geomechanics and Engineering
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    • v.9 no.5
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    • pp.619-629
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    • 2015
  • Influenced by various mining activities, fractures in rock masses have different densities, set numbers and lengths, which induce different mechanical properties and failure modes of rock masses. Therefore, precisely expressing the failure criterion of the fractured rock influenced by coal mining is significant for the support design, safety assessment and disaster prevention of underground mining engineering subjected to multiple mining activities. By adopting PFC2D particle flow simulation software, this study investigated the propagation and fractal evolution laws of the micro cracks occurring in two typical kinds of rocks under uniaxial compressive condition. Furthermore, it calculated compressive strengths of the rocks with different confining pressures and box-counting dimensions. Moreover, the quantitative relation between the box-counting dimension of the rocks and the empirical parameters m and s in Hoek-Brown strength criterion was established. Results showed that with the increase of the strain, the box-counting dimension of the rocks first increased slowly at the beginning and then exhibited an exponential increase approximately. In the case of small strains of same value, the box-counting dimensions of hard rocks were smaller than those of weak rocks, while the former increased rapidly and were larger than the latter under large strain. The results also presented that there was a negative correlation between the parameters m and s in Hoek-Brown strength criterion and the box-counting dimension of the rocks suffering from variable mining activities. In other words, as the box-counting dimensions increased, the parameters m and s decreased linearly, and their relationship could be described using first order polynomial function.

A Study on the Analysis of Time-Regional Distribution of PRecipitation Frequency and Rainfall INternsity in Korea. (강수빈도 및 강우강도의 시공적 분포분석에 관한 연구)

  • 이재준;손광익
    • Water for future
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    • v.14 no.4
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    • pp.53-72
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    • 1981
  • In this study, South Korea is divided into 5 zones and is studied about the analysis of time-regional distribution of previpitation frequency and rainfall intensity in Korea. In the previpitation frequency analysis, the basic data groups of 39 stations were selected. The diagram of previpitation frequency was drawn, and the time-regional distribution of precipitation frequency was analized. In the rainfall intensity analysis, the basic data groups of 36 stations were selected. The probable rainfall, I-D-F curve, and regression equation between 24hr. and 10min.-18hr. areal depth were obtained. The results of this study are following; 1) The precipitation class of max. recurrence probability in every season except summer was commonly (1) 1-5mm, (2) 0.1-1mm, (3) 5-10mm in order. 2) The zone of max. recurrence frequency owing to the precipitation class was zone II in precipitation frequency of below 20mm, zone IV in precipitation frequency of 30-40mm, zone I in precipitation frequency of above 70mm for a year. 3) The recurrence probability of precipitation in Korea can be represented to the equation of exponential function; $$W(x)=e^{\alpha+\beta}$$ 4) The first and third zones were expected heavy rain for the short and long duration. 5) The I.D.F. curves were drawn, and established that the time interval for the least deviation of I.D.F curve is 10~40min., 40min. -4hr., 4~24hr. 6) The regression equations of areal mean depth between 24hr. and 10min.-18hr. for each zone were obtained. 7)The probable rainfall of 36 points were calculated.

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Comparison of Groundwater Recharge between HELP Model and SWAT Model (HELP 모형과 SWAT 모형의 지하수 함양량 비교)

  • Lee, Do-Hun;Kim, Nam-Won;Chung, Il-Moon
    • Journal of Korea Water Resources Association
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    • v.43 no.4
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    • pp.383-391
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    • 2010
  • The groundwater recharge was assessed by using both SWAT and HELP models in Bocheong-cheon watershed. The SWAT model is a comprehensive surface and subsurface model, but it lacks the physical basis for simulating a soil water percolation process. The HELP model which has a drawback in simulating subsurface lateral flow and groundwater flow component can simulate soil water percolation process by considering the unsaturated flow effect of soil layers. The SWAT model has been successfully applied for estimating groundwater recharge in a number of watersheds in Korea, while the application of HELP model has been very limited. The subsurface lateral flow parameter was proposed in order to consider the subsurface lateral flow effect in HELP model and the groundwater recharge was simulated by the modified exponential decay weighting function in HELP model. The simulation results indicate that the recharge of HELP model significantly depends on the values of lateral flow parameter. The recharge errors between SWAT and HELP are the smallest when the lateral flow parameter is about 0.6 and the recharge rates between two models are shown to be reasonably comparable for daily, monthly, and yearly time scales. The HELP model is useful for estimating groundwater recharge at watershed scale because the model structure and input parameters of HELP model are simpler than that of SWAT model. The accuracy of assessing the groundwater recharge might be improved by the concurrent application of SWAT model and HELP model.

Fracture Toughness Prediction of RPV Steels Using Crack Arrest Load of Load-Displacement Curve in Charpy V - Notch Impact Test (샤피 V - 노치 충격 하중-변위 곡선의 균열정지하중을 이용한 원자로압력용기강의 파괴인성 예측)

  • Park, Jeong-Yong;Kim, Ju-Hak;Lee, Yun-Gyu;Hong, Jun-Hwa
    • Korean Journal of Materials Research
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    • v.10 no.4
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    • pp.305-311
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    • 2000
  • Applicability of crack arrest load measured from the Charpy V-notch impact test has been investigated to predict the fracture toughness of nuclear reactor pressure vessel (RPV) steels (ASME SA508 Cl.3). The temperature dependence of the crack arrest load was well described by the type of exponential function characterized by an index temperature at which the crack arrest load is 2kN. The specific index temperature, which also well correlated with $T_{NDT}\;and\;T_{41J}$ is expected to be representative index temperature characterizing the crack arrest fracture toughness of RPV steels. Also, the crack arrest load correlated well with the stable crack length measured from the fracture surface. From the measurements of the crack arrest load and the stable crack length, the lower bound fracture toughness, $K_{Ia}$ of RPV steels could be predicted with sufficient accuracy.

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Variation of Hydrogen Residue on Metallic Samples by Thermal Soaking in an Inert Gas Environment (불활성 가스하 열건조에 따른 금속시험편의 수소잔류물 거동 분석)

  • Lee, Yunhee;Park, Jongseo;Baek, Unbong;Nahm, Seunghoon
    • Transactions of the Korean hydrogen and new energy society
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    • v.24 no.1
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    • pp.44-49
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    • 2013
  • Hydrogen penetration into a metal leads to damages and mechanical degradations and its content measurement is of importance. For a precise measurement, a sample preparation procedure must be optimized through a series of studies on sample washing and drying. In this study, two-step washing with organic solvents and thermal soaking in inert gas were tried with a rod-shaped, API X65 steel sample. The samples were machined from a steel plate and then washed in acetone and etyl-alcohol for 5 minute each and dried with compressed air. After then, the samples were thermally soaked in a home-made nitrogen gas chamber during 10 minute at different heat gun temperatures from 100 to $400^{\circ}C$ and corresponding temperature range in the soaking chamber was from 77 to $266^{\circ}C$ according to the temperature calibration. Hydrogen residue in the samples was measured with a hot extraction system after each soaking step; hydrogen residue of $0.70{\pm}0.12$ wppm after the thermal soaking at $77^{\circ}C$ decayed with increase of the soaking temperature. By adopting the heat transfer model, decay behavior of the hydrogen residue was fitted into an exponential decay function of the soaking temperature. Saturated value or lower bound of the hydrogen residue was 0.36 wppm and chamber temperature required to lower the hydrogen residue about 95% of the lower bound was $360^{\circ}C$. Furthermore, a thermal desorption spectroscopy was done for the fully soaked samples at $360^{\circ}C$. Weak hydrogen peak was observed for whole temperature range and it means that hydrogen-related contaminants of the sample surface are steadily removed by heating. In addition, a broad peak found around $400^{\circ}C$ means that parts of the hydrogen residue are irreversibly trapped in the steel microstructure.

The Effect of Change in Moisture Content on Some Physical Properties of Grains (I) -Spericity, Weight, Volume- (含水率變化가 穀物의 物理的 特性에 미치는 影響(I) -球形率, 重量, 體積-)

  • Oh, Moo-Young
    • Magazine of the Korean Society of Agricultural Engineers
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    • v.26 no.2
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    • pp.59-68
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    • 1984
  • The Purpose of this study was to investigate the effect of the change in misture content on some physical properties of grains, and some relations amont the properties. Materials included ere rough rice, brown rice, barley and wheat with the range of moisture content of 6~26 percent, 7~25 percent, 10~24 percent and 6~22 percent, respectively. Kernel dimension, sphericity, kernel weight, and volume were included as the physical properties of the grains. The results obtained are summarized as follows; 1. The ratio of grain length to the thickness was in the range of 3.59~4.16 for rough rice(Indica type), 2.98~3.27 for rough rice(Japonica type), 3.25 for brown rice (I.T.), 2.14~2.38 for brown rice(J.T.), 2.92~3.13 for barley and 2.10~2.21 for wheat, respectively. 2. The sphericity was found to be 42 percent for rough rice(I.T.), 48 percent for rough rice(J.T.), 52 percent for brown rice(I.T.), 62 percent for brown rice(J.T.), 45 percent for barley and 61 percent for wheat, respectively. 3. The kernel weight of grains was linealy increased with the increase of moisture content. At a specified moisture centent of 14 percent, the kernel weight was shown to be in the range of 4.72${\times}10^{-5}$~3.58${\times}10^{-5}$kg for wheat, 3.60${\times}10^{-5}$~3.12${\times}10^{-5}$kg for barley, 2.80${\times}10^{-5}$~2.35${\times}10^{-5}$kg for rough rice, and 2.24${\times}10^{-5}$~1.82${\times}10^{-5}$kg for brown rice, respectively. 4. The kernel volume was linearly increased with increase of moisture content. The rate of increase was significantly low for rough rice in comparison with the remaining grains. The kernel volume, at a specified moisture content of 14 percent, was in the range of 3.51${\times}10^{-8}$~2.76${\times}10^{-8}m^3$ for wheat, 2.84${\times}10^{-8}$~2.43${\times}10^{-8}m^3$ for barley, 2.93${\times}10^{-8}$~1.97${\times}10^{-8}m^3$ for rough rice, and 1.61${\times}10^{-8}$~1.29${\times}10^{-8}m^3$ for brown rice, respectively. 5. The kernel volume of grains was found to be related to the length, width, thickness and kernel weight as a exponential function. The kernel volume was shown to have correlation coefficient to the length factor rough rice and barley which were of low sphericity, while the width factor was predominant for brown rice and wheat which was of high sphericity.

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$In_{0.64}Al_{0.36}Sb$층의 성장온도 및 도핑에 따른 광학적 특성

  • O, Jae-Won;Kim, Hui-Yeon;Ryu, Mi-Lee;Im, Ju-Yeong;Sin, Sang-Hun;Kim, Su-Yeon;Song, Jin-Dong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.160-160
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    • 2010
  • 테라헤르츠 소스로 저온 InGaAs를 대체하기 위해 저온에서 성장한 $In_{0.64}Al_{0.36}Sb$의 성장 온도에 따른 광학적 photoluminescence (PL)과 time-resolved PL (TRPL) 측정을 이용하여 분석하였다. 또한 Be 도핑 농도에 따른 p형 $In_{0.64}Al_{0.36}Sb$의 PL과 TRPL 특성을 undoped $In_{0.64}Al_{0.36}Sb$와 Si-doped $In_{0.64}Al_{0.36}Sb$ 결과와 비교 분석하였다. 본 연구에 사용한 시료는 분자선 엑피탁시 (molecular beam epitaxy)법으로 GaAs 기판 위에 $In_{0.64}Al_{0.36}Sb$을 다양한 성장온도에서 ${\sim}3.7\;{\mu}m$두께 성장하였다. $In_{0.64}Al_{0.36}Sb$의 성장온도는 $400^{\circ}C$ 에서 $460^{\circ}C$까지 변화시키며 성장하였으며, Si과 Be 도핑한 $In_{0.64}Al_{0.36}Sb$ 시료는 약 $420^{\circ}C$에서 성장하였다. 모든 시료의 PL 피크는 ~1450 nm 근처에서 나타나며 단파장 영역에 shoulder 피크가 나타났다. 그러나 가장 낮은 온도 $400^{\circ}C$에서 성장한 시료는 1400 nm에서 1600 nm에 걸쳐 매우 넓은 피크가 측정되었다. PL 세기는 $450^{\circ}C$ 에서 성장한 시료가 가장 강하게 나타났으며, $435^{\circ}C$에서 성장한 시료의 PL 세기가 가장 약하게 나타났다. 방출파장에 따른 PL 소멸곡선을 측정하였으며 double exponential function을 이용하여 운반자 수명시간을 계산하였다. 운반자 수명시간은 빠른 소멸성분 $\tau_1$과 느린 소멸성분 $\tau_2$가 존재하고 빠른 성분 $\tau_1$의 PL 진폭이 약 80%로 느린 성분 $\tau_2$보다 우세하게 나타났다. 각 PL 피크에서의 운반자 수명시간 $\tau_1$은 ~1 ns로 성장온도에 따른 변화는 관찰되지 않았다. 또한 방출파장이 1400 nm에서 1480 nm까지 PL 피크 근처에서 운반자 수명시간은 거의 일정하게 나타났다. Be-doped 시료의 PL 피크는 1236 nm에서 나타나며, Si-doped 시료는 1288 nm, undoped 시료는 1430 nm에서 PL 피크가 측정되었다. PL 피크에서 PL 소멸곡선은 Be-doped 시료가 가장 빨리 감소하였으며, Si-doped 시료가 가장 길게 나타났다. 이러한 결과로부터 $In_{0.64}Al_{0.36}Sb$의 광학적 특성은 성장 온도, dopant type, 도핑 농도에 따라 변화하는 것을 확인하였다.

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Silicon doping effects on the optical properties of $In_{0.64}Al_{0.36}Sb$ grown on GaAs substrates

  • Kim, Hui-Yeon;Ryu, Mi-Lee;Im, Ju-Yeong;Sin, Sang-Hun;Kim, Su-Yeon;Song, Jin-Dong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.159-159
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    • 2010
  • 본 논문은 테라헤르츠 소스로 저온 InGaAs를 대체하기 위한 저온 $In_{0.64}Al_{0.36}Sb$의 실리콘(Si) 도핑 농도에 따른 광학적 특성 변화를 photoluminescence (PL)과 time-resolved PL (TRPL) 측정을 이용하여 분석하였다. $In_{0.64}Al_{0.36}Sb$ 시료는 분자선 엑피탁시 (molecular beam epitaxy)법으로 GaAs 기판 위에 약 $420^{\circ}C$에서 $3.7\;{\mu}m$ 두께 성장하였다. Si은 $In_{0.64}Al_{0.36}Sb$ 시료에서 도핑 농도가 낮을 때는 어셉터(acceptor)로 작용하다가 도핑 농도가 증가함에 따라 도너(donor)로 작용하였다. 본 연구에 사용한 $In_{0.64}Al_{0.36}Sb$ 시료의 Si 도핑 농도는 $4.5{\times}10^{16}\;cm^{-3}$ (n형), $4{\times}10^{16}\;cm^{-3}$ (n형), $8{\times}10^{15}\;cm^{-3}$ (n형), $1{\times}10^{15}\;cm^{-3}$ (p형), $4{\times}10^{14}\;cm^{-3}$ (p형)인 다섯 개의 시료를 사용하였다. Si 도핑한 시료의 PL 피크는 undoped 시료보다 약 100-200 nm 단파장에서 나타나고 PL 세기도 크게 증가하였다. 그러나 Si 도핑 농도가 가장 낮은 n형과 p형 시료의 PL 피크가 가장 짧은 파장 (높은 에너지)에 나타나고 도핑 농도가 증가함에 따라 장파장으로 이동함을 보였다. n형 시료의 도핑 농도가 $8{\times}10^{15}\;cm^{-3}$에서 $4.5{\times}10^{16}\;cm^{-3}$로 증가하였을 때 PL 피크는 1232 nm에서 1288 nm까지 장파장쪽으로 이동하였으며, p형 시료는 도핑 농도가 $4{\times}10^{14}\;cm^{-3}$에서 $1{\times}10^{15}\;cm^{-3}$로 증가하였을 때 PL 피크가 1248 nm에서 1314 nm로 이동함을 보였다. 또한 시료 온도에 따른 PL 결과는 온도가 증가함에 따라 PL 피크는 장파장으로 이동하면서 PL 세기는 급격하게 감소하고 약 100 - 150 K에서 소멸하였다. 그러나 ~1500 nm 이상 장파장 영역에 매우 넓은 새로운 피크가 나타났으며 온도가 증가함에 따라 PL 세기가 증가함을 확인하였다. Si 도핑 농도에 따른 운반자 수명시간 변화를 TRPL을 이용하여 측정하였다. 운반자 수명시간은 double exponential function을 이용하여 얻었다. Si 도핑 시료의 운반자 수명시간이 undoped 시료에 비해 매우 길게 나타났으며, Si 도핑 시료에서는 p형 시료들보다 n형 시료들의 운반자 수명시간이 길게 나타났다. PL 방출파장에 따른 운반자 수명시간은 Si 도핑 농도에 따라 다르게 나타났다. 이러한 PL과 TRPL 결과로부터 $In_{0.64}Al_{0.36}Sb$의 발광 특성 및 운반자 동역학은 Si 도핑에 크게 영향을 받는다는 것을 확인하였다.

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