• 한국정보디스플레이학회:학술대회논문집
• /
• 2004.08a
• /
• pp.1003-1006
• /
• 2004

We have fabricated poly-Si TFTs at 170$^{\circ}C$ using inductively coupled plasma chemical vapor deposition (ICP-CVD) and excimer laser annealing (ELA). A Poly-Si film with large grains exceeding 5000${\AA}$ and a $SiO_2$ film with high breakdown field are deposited by ICP-CVD. A high mobility exceeding 100$cm^2$/Vs with a low sub-threshold swing of 0.76V/dec was obtained.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2004.08a
• /
• pp.962-965
• /
• 2004

In this work, thin films of amorphous silicon (a-Si) were formed on plastic substrates by sputtering deposition and crystallized using excimer laser irradiation. As the entire process is conducted at room temperature, and the laser irradiation-induced heating is confined to the thin film, the plastic substrate is not subjected to thermal stresses. The microstructure resulting from the laser irradiation was dependent on the laser irradiation energy density and the composition of the underlying buffer layers. It was found that a layer of AlN deposited as a buffer between the plastic and the a-Si film increased the endurance of the a-Si film under laser irradiation, and resulted in polycrystalline Si grains up to 100nm in diameter.

• Proceedings of the KIPE Conference
• /
• 2001.10a
• /
• pp.89-92
• /
• 2001

Silent gas discharge method has been widely applied for ozone production, ultraviolet light and UV laser generation. Since ozone and ultraviolet applications have tendency to spread widely in industry, the development of efficient and low-cost power supply for such systems is a task of great impotency. This paper introduces high-frequency inverter type mode power supply designed for ozone generation tube and ultraviolet generation excimer lamp and considerations on this inverter and pulse density modulation control strategy applied in it.

• Journal of the Korean Institute of Telematics and Electronics D
• /
• v.34D no.1
• /
• pp.35-40
• /
• 1997

A new method to form the gate oxide and recrystllize the polycrystalline silicon (poly-Si) active layer simultaneously is proposed and fabricated successfully. During te irradiation of excimer laser, the poly-Si film is recrystallized, while the oxygen ion impurities injected into the amorphous silicon(a-Si) film are activated by laser energy and react with silicon atoms to form SiO2. We investigated the characteristics of the sample fabricated by proposed method using AES, TEM, AFM. The electrical performance of oxide was verified by ramp up voltage method. Our experimental results show that a high quality oxide, a pol-Si film with fine grain, and a smooth and clean interface between oxide and poly-Si film have been successfully obtained by the proposed fabrication method. The interface roughness of oxide/poly-Si fabricated by new method is superior to film by conventional fabrication os that the proposed method may improve the performance of poly-Si TFTs.

• Transactions of Materials Processing
• /
• v.13 no.3
• /
• pp.268-272
• /
• 2004

Transparent materials such as fused silica are widely utilized in optical and optoelectronics field because of its outstanding properties, such as transparency in a wide wavelength range, strong damage resistance for laser irradiation, and high thermal and chemical stability. In this study, we made a few micro patterns on the surface of fused silica plate using laser induced wet etching. KrF excimer laser was used as a light source. There were no burrs and micro cracks on the etched surface of fused silica and the flatness of the etched surface was fairly good. We investigated the influence of etchant upon the etch rate and quality in laser induced wet etching. Pyrene-acetone solution and toluene were used as etchant. In the side of etch rate, toluene solution was better than pyrene-acetone solution. But we made in wider range of energy density using pyrene-acetone solution. But pyrene-acetone solution gave us wider window of energy density for successful micro patterning.

• Proceedings of the KOSOMBE Conference
• /
• v.1994 no.05
• /
• pp.127-130
• /
• 1994

This study is focused on investigating the mechanical properties of the human cornea and its shape through the inverse nonlinear finite element approach using the clinical and experimental data. The results of the inverse approach were used to construct the finite element model of the photorefractive excimer laser surgery for the myopia patients. The results of the finite element model were compared with those of the current clinical experiences and showed good agreements. Finally this study came to the conclusion that the finite element method has potential of the application to the medicine.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.07a
• /
• pp.562-565
• /
• 2001

In this paper, novel device structures in order to realize ultra fast and ultra small silicon devices are investigated using ultra-high vacuum chemical vapor deposition(UHVCVD) and Excimer Laser Annealing (ELA). Based on these fundamental technologies for the deep sub-micron device, high speed and low power devices can be fabricated. These junction formation technologies based on damage-free process for replacing of low energy ion implantation involve solid phase diffusion and vapor phase diffusion. As a result, ultra shallow junction depths by ELA are analyzed to 10~20nm for arsenic dosage(2${\times}$10$\_$14//$\textrm{cm}^2$), exciter laser source(λ=248nm) is KrF, and sheet resistances are measured to 1k$\Omega$/$\square$ at junction depth of 15nm and realized sub-50nm n-MOSFET.

• 한국초전도학회:학술대회논문집
• /
• v.9
• /
• pp.43-47
• /
• 1999

Instead of using KrF excimer lasers( ${\lambda}$ = 248 nm) in depositing oxide thin films, as in the most of the laboratories in Korea, we have used an ArF excimer laser( ${\lambda}$ = 197 nm) which has a shorter wavelength. By using a beam which has a shorter wavelength, we could obtain higher quality and smoother surface YBCO thin films. We fabricated YBCO thin films with the various substrate temperature conditions and analyzed the characteristics of these films. We also studied the charateristics of the films fabricated under the various conditions of the power of laser and the oxygen pressure. The characterization tools used in this work were a transport measurement setup, an XRD , and a SEM. We also fabricated STO/YBCO multilayers to use in SFQ devices fabrication. XRD patterns of the multilayers showed that the multilayer films were grown epitaxially.

• Proceedings of the Korean Society for Technology of Plasticity Conference
• /
• 2004.05a
• /
• pp.245-249
• /
• 2004

Transparent materials such as fused silica are important materials in optical and optoelectronics field because of its outstanding properties, such as transparency in a wide wavelength range, strong damage resistance for laser irradiation, and high thermal and chemical stability. However, these properties make it difficult to micromachine silica in micro-sized quantities. In this study, we fabricated a micro patterns on the surface of fused silica plate using laser induced wet etching. KrF excimer laser was used as a light source. There were no burrs and micro cracks on the etched surface of fused silica and the flatness of the etched surface was fairly good. We investigated the influence of etchant upon the etch rate and quality in laser induced wet etching. Pyrene-acetone, toluene, and pyrene-toluene solution were used as etchant. In the side of etch rate, toluene and pyrene-toluene solution were better than pyrene-acetone solution.

• Bulletin of the Korean Chemical Society
• /
• v.35 no.11
• /
• pp.3158-3162
• /
• 2014

Various pyrene derivatives were synthesized and systematically examined in micelles. Synthesized mono and bispyrene derivatives were tested in micelles so that they displayed a strong excimer band and the excimer band was quenched in the presence of TNT and RDX. In the optimized condition, the binding constant for TNT of a simple dipyrene derivative 4 was increased up to $1.0{\times}10^6M^{-1}$ in cetyl trimethylammonium bromide (CTAB) micelles, which allowed for the detection of 2 ppb of TNT and 334 ppb of RDX by fluorescence titrations.