• Electrical & Electronic Materials
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• v.8 no.4
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• pp.443-450
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• 1995

A directional coupler which on the X-cut $LiNbO_3$ substrate is fabricated by using proton exchange method and self-aligned method. After proton exchange process, the waveguide is formed by annealing process. The relation ship between refractive index change of waveguide and maximum output was studied along with the annealing time. A self-aligned method was used to simplify the fabrication process of the waveguide and to maximize the efficiency of electric field. The on-off state of modulator has been observered with the switching of the directional coupler by the electric field effect and also the switching voltage of the directional coupler has been measured with 8.0 [V].

• Electrical & Electronic Materials
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• v.9 no.10
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• pp.1060-1065
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• 1996

We have studied the magnetoresistance phenomena on spin valve thin films of antiferromagnetic NiO/CoO. Interlayer coupling oscillates between the antiferrocoupling and ferrocoupling with the variation of Cu thickness. The exchange coupling strength between NiO (antiferromagnetic) and NiFe(ferromagnetic) as a function of NiO texture and interface roughness is investigated by CoO insertion. CoO has significantly higher anisotropy in the (111) plane and interface roughness. It seems that the MR-ratio is increased by CoO inserted films. From the AFM and XRD data, the increase of MR-ratio and exchange field is influenced by the roughness of CoO.

• Journal of Magnetics
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• v.4 no.3
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• pp.88-91
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• 1999

A series of NiO/NiFe bilayer films are deposited with the variation of Ar sputtering pressure for the NiO layers only. As the pressure for the NiO layers increases, the exchange anisotropy field (HEX) decreases gradually and becomes extinct at 2.5 mTorr, at which the maximum coercive force (HC) in the NiO/NiFe films is obtained. Randomly oriented columnar structures with HEX a few tens of Oe and oriented columnar structures with zero HEX are observed in the NiP layers by highvoltage hihg-resolution transmission electron microscopy. The vanishing of the HEX in the oriented structures is attributed to the lack of exchange anisotropy energy (EEX) between NiO and NiFe layers, which results in little contribution of interfacial unidirectional pinning anisotropy to the interface of NiO/NiFe bilayer.

• Proceedings of the Korean Magnestics Society Conference
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• 2005.12a
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• pp.80-81
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• 2005

The resilience of the exchange bias ($H_{EX}$) in ferromagnet / antiferromagnet bilayers is generally studied in terms of repeated hysteresis loop cycling or by protracted annealing under reversed field (training and long-term relaxation respectively). The stability of $H_{EX}$ is fundamental for practical application of exchange bias systems. In this paper we report measurements of training and relaxation in FeNi films coupled with the antiferromagnet FeMn. We show that $H_{EX}$ suppressed both by training and relaxation was partially recovered as soon as a field cycling for consecutive hysteresis loop measurement was stopped or the magnetization of the ferromagnet was switched back to the biased direction.

• Proceedings of the Korean Society of Soil and Groundwater Environment Conference
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• 2006.04a
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• pp.138-138
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• 2006

• Journal of the Korean Magnetics Society
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• v.22 no.6
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• pp.204-209
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• 2012

We measure the ferromagnetic resonance signals in order to analyze the exchange coupling energy due to the uncompensated antiferromagnetic spins in exchange coupled CoFe/MnIr bilayers. The exchange bias fields ($H_{ex}$) and rotatable anisotropy fields ($H_{ra}$) are obtained from the ferromagnetic resonance fields measured with in-plane angle in thermal annealed samples with $t_{AF}$= 0, 3, and 10 nm. The sum of the $H_{ex}$ and $H_{ra}$ do not depend on the MnIr thickness, which means that all the uncompensated AF spins are aligned to one direction in $300^{\circ}C$ annealed samples. Therefore, the uncompensated AF spins are divided into two different parts. One parts are fixed at the interface between CoFe/MnIr bilayers and induces the $H_{ex}$, other parts are rotatable with magnetic field and induces the $H_{ra}$. Finally, the exchange coupling energy can be expressed by the sum of the exchange bias energy and rotatable anisotropy energy.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.26 no.9
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• pp.1201-1208
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• 2002

A numerical flow-field analysis is performed to investigate flow configurations in the anode, cathode and cooling channels on the bipolar plates of a proton exchange membrane fuel cell (PEMFC). Continuous open-faced flow channels are formed on the bipolar plate surface to supply hydrogen, air and water. In this analysis, two types of channel pattern are considered: serpentine and spiral. The averaged pressure distribution and velocity profiles of the hydrogen, air and water channels are calculated by two-dimensional flow-field analysis. The equations for the conservation of mass and momentum in the two-dimensional fluid flow analysis are slightly modified to include the characteristics of the PEMFC. The analysis results indicate that the serpentine flow-fields are locally unstable (because two channels are cross at right angles). The spiral flow-fields has more stable than the serpentine, due to rotational fluid-flow inertia forces. From this study, the spiral channel pattern is suggested for a channel pattern of the bipolar plate of the PEMFC to obtain better performance.

• Journal of the Korean Magnetics Society
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• v.5 no.5
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• pp.570-574
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• 1995

Magnetoresistance of NiFeCo/Cu/NiFeCo/FeMn uncoupled exchange biased sandwiches has been studied. The magnetoresistance change ratio, ${\Delta}R/R_{s}$ showed 4.1 % at a saturation field as low as 11 Oe in $Si/Ti(50\;{\AA})/NiFeCo(70\;{\AA})/Cu(23\;{\AA})/NiFeCo(70\;{\AA})/FeMn(150\;{\AA})/Cu(50\;{\AA})$ spin valve structure. In this system, the magnetoresistance was affected by interlayer material and thickness. When Ti and Cu were used as the interlayer material in this structure, maximum magnetoresistance change ratio were 0.32 % and 4.1 %, respectively. 6.1 % MR ratio was obtained in $Si/Ti(50\;{\AA})/NiFeCo(70\;{\AA})/Cu(15\;{\AA})/NiFeCo(70\;{\AA})/FeMn(150\;{\AA})/Cu(50\;{\AA})$ spin valve structure. The magnetoresistance change ratio decreased monotonically as the interlayer thickness increased. It was found that the exchange bias field exerted by FeMn layer to the adjacent NiFeCo layer was ~25 Oe, far smaller than that reported in NiFe/Cu/NiFe/FeMn spin valve structure(Dieny et. al., ~400 Oe). The relationship between the film texture and exchange anisotropy ha been examined for spin valve structures with Ti, Cu, or non-buffer layer.

• Journal of the Korean Magnetics Society
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• v.10 no.3
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• pp.112-117
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• 2000

We inserted CoO layer in NiO spin-valves to improve on magnetoresistance and exchange coupling field. The magnetoresistance ratio was increased from 4.5 % to 5.5 % with the increase of CoO thickness. We can not find the dependence between (111) texture and exchange coupling by the measurement of XRD of CoO/NiO spin-valves. The surface roughness of CoO layer, 6.1 $\AA$ is twice more than that of NiO layer, 3.1 $\AA$. The increase of exchange coupling field and coercive field in the CoO/NiO spin-valves will be due to increasing roughness. We prepared the NiO/CoO/NiO/CoO/NiO spin-valves to reduce coercive field and the coercive field decreased from 110 Oe to 50 Oe, and the coupling field is not changed from 70 Oe.

• Journal of the Korean Magnetics Society
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• v.25 no.3
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• pp.74-78
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• 2015

We measured the low field microwave absorption (LFMA) and ferromagnetic resonance (FMR) signals at various magnetic field angle in exchange biased CoFe/MnIr thin film. The LFMA signals were dominantly related to the magnetization rotation process. In order to analyze the LFMA signal, we calculated transverse magnetization ($M_{\tau}$) and permeability (${\mu}_{\tau}$) for CoFe/MnIr thin film by using S-W model, which magnetic parameters of exchange bias ($H_{ex}$ = 58.5 Oe) and uniaxial anisotropy field ($H_k$ = 30Oe) was obtained from FMR signals. The LFMA signal at hard axis showed similar behavior compared with that of $M_{\tau}$. As the magnetic field angle approach to the perpendicular to hard axis, the LFMA signals were depending on both of $M_{\tau}$ and ${\mu}_{\tau}$.