• 제목/요약/키워드: Exchange bias field

검색결과 57건 처리시간 0.031초

Positive Exchange Bias in Thin Film Multilayers Produced with Nano-oxide Layer

  • 전병선;황찬용
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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    • pp.304-305
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    • 2013
  • We report a positive exchange bias (HE) in thinmultilayered filmscontaining nano-oxide layer. The positive HE, obtained for our system results from an antiferromagnetic coupling between the ferromagnetic (FM) CoFe and the antiferromagnetic (AFM) CoO layers, which spontaneously form on top of the nano-oxide layer (NOL). The shift in the hysteresis loop along the direction of thecooling field and the change in the sign of exchange bias are evidence of antiferromagnetic interfacial exchange coupling between the CoO and CoFe layers. Our calculation indicates that uncompensated oxygen moments in the NOL results in antiferromagnetic interfacial exchange coupling between the CoO and CoFe layers. One of the interesting features observed with our system is that it displays the positive HE even above the bulk Neel temperature (TN) of CoO. Although the positive HEsystem has a different AFM/FM interfacial spin structure compare to that of the negative HE one, the results of the angular dependence measurements show that the magnetization reversal mechanism can be considered within the framework of the coherent rotation model.

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Exchange Bias in Cr2O3/Fe3O4 Core/Shell Nanoparticles

  • Yun, B.K.;Koo, Y.S.;Jung, J.H.
    • Journal of Magnetics
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    • 제14권4호
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    • pp.147-149
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    • 2009
  • We report the exchange bias in antiferromagnet/ferrimagnet $Cr_2O_3/Fe_3O_4$ core/shell nanoparticles. The magnetic field hysteresis curve for $Cr_2O_3/Fe_3O_4$ nanoparticles after field-cooling (FC) clearly showed both horizontal ($H_{EB}{\sim}$610 Oe) and vertical (${\Delta}M{\sim}$5.6 emu/g) shifts at 5 K. These shifts disappeared as the temperature increased toward the Neel temperature of $Cr_2O_3\;(T_N{\sim}$307 K). The $H_{EB}\;and\;{\Delta}M$ values were sharply decreased between the $1^{st}\;and\;the\;2^{nd}$ magnetic field cycles, and then slowly decreased with further cycling. These results are discussed in terms of the formation of single domains with pinned, uncompensated, antiferromagnetic spin and their evolution into multi-domains with cycling.

Temperature dependence of exchange bias in Co/Ni anti-dot arrays

  • Seo, M.S.;Deshpande, N.G.;Lee, S.J.;Lee, Y.P.;Rhee, J.Y.;Kim, K.W.
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제40회 동계학술대회 초록집
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    • pp.436-436
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    • 2011
  • Recently, spintronic devices with submicron structures are widely investigated to take advantage of their unique micromagnetic properties. In this work, we study the temperature dependence of exchange bias in bilayer anti-dot arrays made by depositing Co (40 nm)/Ni (5 nm) ferromagnetic bilayer on Si substrate to form anti-dot arrays with a diameter $1{\mu}m$. The anti-dot patterning was done only for the upper Co layer, while the Ni underlayer was kept unperforated. The temperature dependences of magnetoresistance (MR) and exchange bias were studied along magnetic easy and hard axes. The in-plane MR measurements were performed using a physical-property measurement system (PPMS ; Quantum Design Inc.) at various temperatures. The standard in-line four-point probe configuration was used for the electrical contacts. As temperature was varied, the MR data were obtained in which in-plane field (H=3 kOe) was applied in the directions along the hard and the easy axes with respect to the lattice plane. The temperature dependences of magnetic anisotropy and exchange bias were also studied along the magnetic easy and hard axes. As temperature decreases, the single peak splits into two peaks. While no exchange bias was observed along the magnetic easy axis, the exchange bias field steadily increased with decreasing temperature along the magnetic hard axis. These results were interpreted in connection with the magnetic anisotropy and the effect of the anti-dots in pinning domain wall motion along the respective direction.

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Magnetization Process in Vortex-imprinted Ni80Fe20/Ir20Mn80 Square Elements

  • Xu, H.;Kolthammer, J.;Rudge, J.;Girgis, E.;Choi, B.C.;Hong, Y.K.;Abo, G.;Speliotis, Th.;Niarchos, D.
    • Journal of Magnetics
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    • 제16권2호
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    • pp.83-87
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    • 2011
  • The vortex-driven magnetization process of micron-sized, exchange-coupled square elements with composition of $Ni_{80}Fe_{20}$ (12 nm)/$Ir_{20}Mn_{80}$ (5 nm) is investigated. The exchange-bias is introduced by field-cooling through the blocking temperature (TB) of the system, whereby Landau-shaped vortex states of the $Ni_{80}Fe_{20}$ layer are imprinted into the $Ir_{20}Mn_{80}$. In the case of zero-field cooling, the exchange-coupling at the ferromagnetic/antiferromagnetic interface significantly enhances the vortex stability by increasing the nucleation and annihilation fields, while reducing coercivity and remanence. For the field-cooled elements, the hysteresis loops are shifted along the cooling field axis. The loop shift is attributed to the imprinting of displaced vortex state of $Ni_{80}Fe_{20}$ into $Ir_{20}Mn_{80}$, which leads to asymmetric effective local pinning fields at the interface. The asymmetry of the hysteresis loop and the strength of the exchange-bias field can be tuned by varying the strength of cooling field. Micromagnetic modeling reproduces the experimentally observed vortex-driven magnetization process if the local pinning fields induced by exchange-coupling of the ferromagnetic and antiferromagnetic layers are taken into account.

Universal time relaxation behavior of the exchange bias in ferromagnetic/antiferromagnetic bilayers

  • Dho Joonghoe
    • 한국자기학회:학술대회 개요집
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    • 한국자기학회 2005년도 동계학술연구발표회 및 2차 아시안포럼
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    • pp.80-81
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    • 2005
  • The resilience of the exchange bias ($H_{EX}$) in ferromagnet / antiferromagnet bilayers is generally studied in terms of repeated hysteresis loop cycling or by protracted annealing under reversed field (training and long-term relaxation respectively). The stability of $H_{EX}$ is fundamental for practical application of exchange bias systems. In this paper we report measurements of training and relaxation in FeNi films coupled with the antiferromagnet FeMn. We show that $H_{EX}$ suppressed both by training and relaxation was partially recovered as soon as a field cycling for consecutive hysteresis loop measurement was stopped or the magnetization of the ferromagnet was switched back to the biased direction.

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Annealing Effect on Exchange Bias in NiFe/FeMn/CoFe Trilayer Thin Films

  • Kim, Ki-Yeon;Choi, Hyeok-Cheol;You, Chun-Yeol;Lee, Jeong-Soo
    • Journal of Magnetics
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    • 제13권3호
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    • pp.97-101
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    • 2008
  • We investigated the exchange bias fields at the NiFe/FeMn and FeMn/CoFe interfaces in 18.9-nm NiFe/15.0-nm FeMn/17.6-nm CoFe trilayer thin films as the annealing temperature was varied from room temperature to $250^{\circ}C$ in a vacuum for 1 hour in a magnetic field of 150 Oe. Interestingly, magnetic hysteresis (M-H) measurements showed that NiFe/FeMn/CoFe trilayer thin films exhibited a completely contrasting variation of the exchange bias fields at both the NiFe/FeMn and FeMn/CoFe interfaces with annealing temperatures. High-angle X-ray diffraction (XRD) measurements indicated the absence of any discernible effect of thermal treatment on the NiFe(111) and FeMn(111) peaks. The compositional depth profile obtained from X-ray photoelectron spectroscopy (XPS) results presented the asymmetric compositional depth profiles of the Mn and Fe atoms throughout the FeMn layer. We contend that this asymmetric compositional depth profile and the preferential Mn diffusion into the NiFe layer, compared to that into the CoFe layer, are conclusive experimental evidence of the contrasting variation of the exchange bias fields at two interfaces having a common polycrystalline FeMn(111) layer.

자기 저항 헤드의 이중 자기 교환 바이어스를 위한 $NiFe/TbCo/Si_3N_4$ 박막제조 (Magnetoresistive heads with dual exchange bias using $NiFe/TbCo/Si_3N_4$ thin films)

  • 김영채;오장근;조순철
    • 한국자기학회지
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    • 제4권3호
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    • pp.239-243
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    • 1994
  • NiFe와 TbCo의 게면에서의 자기 교환 결합을 이용하여 자기 저항 소자에 수평 및 수직 바이어스 자장을 제공할수 있도록 $NiFe/TbCo/Si_3N_4$ 박막을 제조하였다. Tb의 면적비가 36 %이고, 기판 바이어스를 인가하지 않았을때 100~180 Oe의 교환 자장을 얻을 수 있었다. NiFe, TbCo, 그리고 보호막으로 사용되는 $Si_3N_4$ 각층의 두께는 각각 $470\;{\AA},\;2400\;{\AA},\;600\;{\AA}$ 이었다. NiFe를 1000 W의 전력과 2.5 mTorr의 아르곤 압력에 제작한 시편에서 1.45 %의 자기 저항 변화율을 얻을 수 있었다. 미세 소자로 제작된 NiFe의 자기 저항 변화율은 1.31 %로 감소 하였으며, 감자화 자장의 영향으로 박막이 완전히 포화되지 못한 곡선을 보였다. 150 Oe의 교환 자 장을 갖는 박막을 자화 용이 방향과 $36^{\circ}$의 각도로 소자를 제작한 결과 약 85 Oe 정도의 자기 저항 응답 곡선의 천이를 보였으며, 소자의 동작점이 응답의 선형 구간으로 이동하였다. 또한 Barkhausen 잡음이 교환 자장에 의한 수평 바이어스에 의하여 제거되었다.

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Switchable Uncompensated Antiferromagnetic Spins: Their Role in Exchange Bias

  • Lee, Ki-Suk;Kim, Sang-Koog;Kortright J.B.;Kim, Kwang-Youn;Shin, Sung-Chul
    • Journal of Magnetics
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    • 제10권1호
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    • pp.36-39
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    • 2005
  • We report element-resolved and interface-sensitive magnetization reversals investigated from an oppositely exchange-biased NiFe/FeMn/Co structure by employing soft x-ray resonant Kerr rotation measurements. We have found not only switchable uncompensated antiferromagnetic regions with its sizable thicknesses at both interfaces of the FeMn layer but also their strong coupling to the individual ferromagnetic layers. These experimental results provide a better insight into experimentally observed reductions in exchange-bias field on the basis of an interface-proximity model proposed in this work.

교환 결합력을 갖는 CoFe/MnIr 박막에서 강자성 공명 선폭의 각도 의존성 연구 (Angular Dependence of Ferromagnetic Resonance Linewidth in Exchange Coupled CoFe/MnIr Bilayers)

  • 윤석수;김동영
    • 한국자기학회지
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    • 제26권2호
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    • pp.50-54
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    • 2016
  • 본 연구에서는 교환 결합력을 갖는 CoFe/MnIr 박막 재료의 각도에 따른 강자성 공명 선폭 변화 특성을 분석하였다. 선폭의 최대 및 최소값은 교환 결합력에 의한 일방 이방성의 자화 곤란축 및 용이축 방향에서 각각 관측되었으며, 고정된 MnIr의 스핀에 의한 교환 바이어스 자기장의 각도 의존성과 일치하였다. 따라서, 최대 선폭은 고정된 MnIr 스핀의 반대 방향에서 자기장 방향으로 꼬여있는(twist) CoFe의 자화에 기인한다. 한편, CoFe 단일 박막에 비하여 증가된 최소 선폭은 각도 의존성이 없는 회전 이방성 자기장과 관련되며, 선폭 증가의 원인은 MnIr 입도의 자화 용이축 분포 특성으로 설명된다.

Co/Cu/Co/FeMn 스핀밸브의 자기저항 특성 향상 연구 (Study on the Improvement of Exchange Bias and Magnetoresistance in Co/Cu/Co/FeMn Spin Valve by Heat Treatment)

  • 김홍진;배준수;노은선;이택동;이혁모
    • 한국자기학회지
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    • 제12권1호
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    • pp.24-29
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    • 2002
  • 반강자성 FeMn과 강자성 Co를 이용한 기판/Co/Cu/Co/FeMn 구조의 스핀밸브를 제조하여 자기저항 특성을 조사하였다. Cu를 하지층으로 하여 FeMn 반강자성층을 형성시킨 결과 ${\gamma}$y-FeMn과 고착층 Co와의 교환이방성 결합이 향상되었다. FeMn증착시 Ar 압력과 power를 달리해가며 최적의 FeMn 증착조건을 고찰하였다. 이로부터 FeMn과 Co간의 계면이 평탄해질수록 교환결합의 세기가 증가함을 알 수 있었다. AES 분석으로부터 열처리에 의해 Co와 Cu간 계면고용층이 소멸됨을 확인하였다. 기판/Co/Cu/Co/FeMn 스핀밸브를 열처리함으로써 교환이방성 결합과 자기저항비를 각각 3배와 1.4배 이상 향상시켰다.