• Journal of Sensor Science and Technology
• /
• v.7 no.1
• /
• pp.51-60
• /
• 1998

La-modified $PbTiO_{3}$(PLT) thin plates were prepared for the fabrication of PLT pyroelectric IR sensors. The effects of the preparation parameters such as tile sintering temperature, the La content, and the ambient powder quantity, on the microstructural and dielectric properties of PLT thin plates were investigated by X-ray diffraction, scanning electron microscope, and measurements of relative density and dielectric properties. With an increased La content, the tetragonality c/a was decreased but the densification and the grain size were increased, which is considered to be due to the increased Pb vacancy concentration to maintain charge neutrality at the increased of La content. When the quantity of the ambient powder wvas increased, the tetragonality was slightly increased, which is believed io be due to the reduced evaporation of PbO. But the e(fect is insignificant compared to that of La content. The dielectric constant at room temperature was increased and the Curie temperature was decreased in accordance with the decreased tetragonality ratio c/a with the increase of La content. The dielectric constant and tan ${\delta}$ of $500{\mu}m$ thick PLT thin plate with 10 wt% excess PbO and 10 mol% La contant sintered at $1250^{\circ}C$ for 2 hours in ambient powder of $0.02\;g/cm^{3}$ were 360 and 0.02, respectively.

• Journal of the Korean Ceramic Society
• /
• v.26 no.4
• /
• pp.568-574
• /
• 1989

Effect of PbO addition on sintering and piezoelectric properties at 0.45Pb(Ni1/3Nb2/3)O3-0.40PbTiO3-0.15PbZrO3 composition which is tetragonal phase was investigated. In this composition, Porosity and dielectric constant were increased with excess PbO addition, but Kp and d31 was not changed. These variation of physical properties could be interpreted as composition change of solid grains from tetragonal to MPB region due to amount of PbO-rich liquid changing.

• Journal of the Korean Ceramic Society
• /
• v.29 no.10
• /
• pp.815-821
• /
• 1992

The batches having excess SiO2 to tetrasilicic mica KMg2.5 (Si4O10)F2 were melted at 1450℃. The fabricated samples were heat-treated for the nucleation and the crystallization. The crystallized samples were investigated on several properties. The tetrasilicic mica composition with excess 10 wt% SiO2 was successful both in glassifying and in crystallizing. The optimum temperatures for the nucleation and the crystallization were 680℃ and 1000-1100℃, respectively. The mica and the cristobalite crystallines were identified after heat-treatment. The properties of the samples processed appropriately were as follows, bulk density 2.64g/㎤, thermal expansion coefficient ∼80×10-7/℃, Vicker's hardness ∼105 Kgf/㎟, bending strength ∼666Kgf/㎟, dielectric constant ∼11.1, tan δ 2.5%, volume resistivity 2.35×107∼1.3×1011{{{{ OMEGA }}cm, surface roughness 6.984㎛.

• Proceedings of the IEEK Conference
• /
• 2004.06b
• /
• pp.363-366
• /
• 2004

PZT thin films were formed by rf-magnetron sputtering on $Pt/Ti/SiO_2/Si$ substrate. Bulk PZT target containing $5\%$ excess PbO was used. They were formed with in-situ process at $650^{\circ}C$ as total thickness of 175 and 250 nm after the depositing of thin PZT films at room temperature, i. e. 2-step Sputtering. It was found that the ferroelectric perovskite phase is formed at $650^{\circ}C$ by XRD and the interface between room temp.-layer and $650^{\circ}C$ -layer is not existent. In the samples undergoing 2-step sputtering the dielectric constant was 600 or more and the leakage current density was $2{\times}10^{-7}A/cm^2$. So, we found that the room temp.-layer on the bottom electrode stabilize the underlaid layers.

• Journal of Korean Vacuum Science & Technology
• /
• v.3 no.1
• /
• pp.16-23
• /
• 1999

Deposition of parylene (PA) films has been explored at substrate temperatures below 2$0^{\circ}C$ and pressures below 4 torr. The film thickness was measured using AFM and the film thickness measured was 3,500-12,000$\AA$ and the growth rate was 20-70$\AA$/min. T도 dielectric constant of the deposited PA films was found to be 2.66 and the dielectric strength was in excess of 2$\times$105V/cm. The growth rate became a maximum at a precursor decomposition temperature of $600^{\circ}C$. It was found that the growth rate decreased with increasing substrate temperature, whereas it increased with increasing pressure. At a precursor decomposition temperature of 75$0^{\circ}C$ or at a deposition pressure above 1 Torr the film surface became rough due to particle formation in the gas phase. The condensation of a p-xylylene monomer on the substrate surface turned out to be a rate-limiting step in the growth of the PA films.

• Proceedings of the KIEE Conference
• /
• 1995.07c
• /
• pp.1022-1024
• /
• 1995

In this study, $Pb(Zr_xTi_{1-x})O_3$(x=0.65, 0.52, 0.35) thin films were fabricated by Sol-Gel method. A stock solution with excess Pb 10[mol.%] of $Pb(Zr_xTi_{1-x})O_3$ was made and spin-coated on the Pt/$SiO_2$/Si substrate at 4000[rpm] for 30[sec.]. Coated specimens were dried on the hot-plate at $400[^{\circ}C]$ for 10[min.]. Sintering temperature and time were $500{\sim}800[^{\circ}C]$ and $1{\sim}60$[min.]. To investigate crystallization condition, PZT thin films were analyzed with sintering temperature, time and composition by the XRD. The microstructure of thin films were investigated by SEM. The ferroelectric perovskite phases precipitated under the sintering of $700[^{\circ}C]$ for 1 hour. In the PZT(52/48) composition, dielectric constant and dielectric loss were 2133, 2.2[%] at room temperature, respectively.

• The Korean Journal of Ceramics
• /
• v.4 no.3
• /
• pp.249-253
• /
• 1998

The influence of PbO additive on dielectric properties and sintering behavior of $(Pb_{0.46}Ca_{0.55})$ {$(Fe__1/2}Nb_{1/2}){0.9}Sn_{{0.1}$}$O_3$ ceramics has been investigated. The incorporation of a limited excess PbO ($\leq$2.0 wt. %) in the starting materials is quite beneficial for densification in the temperature range of 1150~$1175^{\circ}C$ in air. At a small doping level (0.8 wt. %) the ceramics prepared from powders calcined at $900^{\circ}C$ showed the best dielectric properties. The dielectric constants ($\varepsilon_r$) and Q.f were found to be 85.8~85.6 and 8530~8600 GHz, respectively. The temperature coefficient of resonant frequency ($\tau_f$) varied in the range of -2~4 $ppm/^{\circ}C$. Examination of the microstructure as well as analysis of the second phases in these materials revealed the presence of the pyrochlore-type phase which is detrimental to the dielectrics.

• The Transactions of the Korean Institute of Electrical Engineers
• /
• v.44 no.7
• /
• pp.914-918
• /
• 1995

In this study, Pb(Zr$_{x}$ Ti$_{1-x}$ )O$_{3}$ (x=0.65, 0.52, 0.35) thin films were fabricated by Sol-Gel method. A stock solution with excess Pb 10[mol%] of Pb(Zr$_{x}$ Ti$_{1-x}$ )O$_{3}$ was made and spin-coated on the Pt/SiO$_{2}$/Si substrate at 4000[rpm] for 30[sec.]. Coated specimens were dried on the hot-plate at 400[.deg. C] for 10[min.]. Sintering temperature and time were 500~800[.deg. C] and 1~60[min.]. The coating process was repeated 6 times and the final thickness of the thin films were about 4800[A]. To investigate crystallization condition, PZT thin films were analyzed with sintering temperature, time and composition by the XRD. The microstructure of thin fulms were investigated by SEM. The ferroelectric perovskite phases precipitated under the sintering of 700[.deg. C] for 1 hours. In the PZT(52/48) composition, dielectric constant and dielectric loss were 2133, 2.2[%] at room temperature, respectively.ively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2000.11a
• /
• pp.320-323
• /
• 2000

We attempted to fabricate polyurethane derivatives (PU-CN, PU-DCM) LB films by using LB method. Also, we investigated the monolayer behavior at the air-water interface by surface pressure-area ($\pi$-A) isotherms. And, the surface morphologies and the physicochemical properties of LB films were investigated by atomic force microscopy (AFM) and UV-vis spectroscopy, respectively. Also, the electrical properties of polyurethane derivatives LB films were investigated by using the conductivity and the dielectric constant. In the AFM images, we conclude that surface morphology of PU-DCM LB films is smooth and homogeneous and has optimal hydrophobicity and good stability, whereas PU-CN LB films give rougher surfaces with more excess material. In the I-V characteristics, the conductivity is different as to the polyurethane derivatives, it is considered that this phenomena could be described by the difference of lumophore pendant which was adhered at PU main chain.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.12 no.4
• /
• pp.184-189
• /
• 2002

The electrical and optical properties of $(Pb_{0.91}La_{0.09})(Zr_{0.65}Ti_{0.35})O_3$(PLZT) thin films by MOCVD using ultrasonic spraying were investigated. To compensate the Pb loss by evaporation, 5 and 10 wt% of excess Pb was added to 0.2 M precursor. After deposition of films on ITO-coated glasses in oxygen atmosphere for 30 min, films were heated by in-situ RTA (rapid thermal annealing) method. When the films were heat treated at $600^{\circ}C$, perovskite single phase was obtained. The optical property of the film with 10 wt% excess Pb was excellent showing about 84 % of transmittance near 520 nm. The dielectric constant of the film was about 308 and the leakage current of the film was lower than the Pb excess 0, 5 wt% PLZT thin films.