• Title/Summary/Keyword: Evaporation Source

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XPS Characterization and Morphology of MgO Thin Films grown on Single-Crystalline Diamond (100)

  • Lee, S.M.;Ito, T.;Murakami, H.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.07a
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    • pp.19-27
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    • 2003
  • Morphology and composition of MgO films grown on single-crystalline diamond (100) have been studied. MgO thin films were deposited in the substrate temperature range from room temperature (RT) to 723K by means of electron beam evaporation using MgO powder source. Atomic force microscopy images indicated that the film grown at RT without $O_2$ supply was relatively uniform and flat whereas that deposited in oxygen ambient yielded higher growth rates and rough surface morphologies. X-ray photoelectron spectroscopy analyses demonstrate that the MgO film deposited at RT without $O_2$ has the closest composition to the stoichiometric MgO, and that a thin contaminant layer composed mainly of magnesium peroxide (before etching) or hydroxide (after etching) was unintentionally formed on the film surface, respectively. These results will be discussed in relation to the interaction among the evaporated species and intentionally supplied oxygen molecules at the growth front as well as the interfacial energy between diamond and MgO.

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A study on the discharge characteristics of liquid nitrogen at atmospheric pressure (대기압하에서 액체질소(LN2)방전특성에 관한 연구)

  • 이영근;주재현;김상구;이광식;이동인
    • Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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    • 1993.10a
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    • pp.58-62
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    • 1993
  • This paper shows the discharge characteristics of liquid nitrogen under plane to plane electrode, needle to plance electrode, inserting teflon insulator in plane to plane electrode at atmospheric pressure. The main experimental device of this paper is cryostat. The important results obtained from this study are sa follows. Breakdown voltage of LN2 under N-P electrode is higher than that of under P-P electrode at atmospheric pressure. Breakdown duration time is longer with increase of electode gap under the P-P, N-P electrodes. The formation of bubbles by evaporation is observed in spite of non-applying source at atmospheric pressure and the creation of corona confirmed. Breakdown voltage and breakdown duration time are in proportion to increase of diameter in case of inserting teflon insulator. Partial discharge characteristics of thickness 0.5[mm] is that 채굼 voltage of teflon insulator rose with increase of diameter in each [pps].

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Evaporation characteristics of some materials by resistive and electron beam heating source (저항가열 및 전자빔 증발원을 이용한 물질의 증발 특성)

  • Jeong, Jae-In;Yang, Ji-Hun
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2014.11a
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    • pp.25-25
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    • 2014
  • 박막의 제조는 많은 연구의 기초가 되는 시편을 만드는 과정으로, 현대의 과학기술 연구개발에서 매우 중요한 공정의 하나이다. 그러나 박막의 제조는 제조하는 사람의 숙련도나 장치에 의존하는 경우가 많고 경우에 따라서는 원하는 특성의 박막을 제조하기 어려운 경우도 많다. 그러다보니 경험이 없는 연구자의 경우는 때때로 까다로움과 번거로움을 느끼게 되며, 안정된 공정을 찾기까지 많은 시간을 소비 하게 된다. 특히 부적절한 증발방법의 선정에 따른 실험 결과는 경제적인 손실을 초래할 뿐만 아니라 실험하는 사람을 좌절시키는 가장 큰 요인이 되어왔다. 본 논문에서는 박막 제조에 널리 이용되는 저항가열 및 전자빔 증발원을 이용하여 다양한 물질에 대한 증발특성을 조사하고 그 결과를 발표하고자 한다.

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Post Exposure Delay Effect Modeling and Simulation in Chemically Amplified Resists (화학증폭형 감광제의 노광후 지연 효과에 대한 모델링 및 시뮬레이션)

  • 김상곤;손동수;박흥진;손영수;오혜근
    • Proceedings of the Optical Society of Korea Conference
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    • 2001.02a
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    • pp.78-79
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    • 2001
  • 노광 후 지연(Post Exposure Delay: PED) 효과는 그림 1과 같이 노광 후 지연 시간에 따른 감광제의 Profile에 thinning, T-top, foot, undercut 를 보여주는 현상으로 화학 증폭형 감광제(Chemically Amplified Resist, CAR) 개발에 있어 PED의 안정성은 중요한 요소이다(1). 따라서 노광후 지연 효과에 대한 모델링은 연구와 개발을 위한 시뮬레이션 tool에 있어 매우 의미 있는 일이다. T-top 이나 undercut 를 형성하는 Surface inhibition layer(SIL) 은 노광 후 지연시 발생되는 environmental base contamination, acid evaporation 이 주요 원인이며 다른 원인으로는 감광제 속에서 acid migration, spin coating 동안에 photoacid generator (PAG)의 고갈, internal basic impurities 이며 그 외에 nonbsic atmospheric contamination, high power laser source의 영향 등이 있다. (중략)

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A Study on Cutting Mechanism and Heat Transfer Analysis in Laser Cutting Process (FDM을 이용한 레이저 절단 공정에서의 절단 메카니즘 및 절단폭의 해석)

  • 박준홍;한국찬;나석주
    • Transactions of the Korean Society of Mechanical Engineers
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    • v.17 no.10
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    • pp.2418-2425
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    • 1993
  • A two-dimensional transient heat transfer model for reactive gas assisted laser cutting process with a moving Gaussian heat source is developed using a numerical finite difference technique. The kerf width, melting front shape and temperature distribution were calculated by using the boundary-fitted coordinate system to handle the ejection of workpiece material and heat input from reaction and evaporation. An analytical solution for cutting front movement was adopted and numerical simulation was performed to calculate the temperature distribution and melting front thickness. To calculate the moving velocity of cutting front, the normal distribution of the cutting gas velocity was used. The kerf width was revealed to be dependent on the cutting velocity, laser power and cutting gas velocity.

Fabrication of Pentacene Thin Film Transistors and Their Electrical Characteristics (Pentacene 박막트랜지스터의 제조와 전기적 특성)

  • 김대엽;최종선;강도열;신동명;김영환
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1999.11a
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    • pp.598-601
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    • 1999
  • There is currently considerable interest in the applications of conjugated polymers, oligomers and small molecules for thin-film electronic devices. Organic materials have potential advantages to be utilized as semiconductors in field effect transistor and light emitting didoes. In this study, Pentacene thin film transistors(TFTs) were fabricated on glass substrate. Aluminum and Gold wei\ulcorner used fur the gate and source/drain electrodes. Silicon dioxde was deposited as a gate insulator by PECVD and patterned by R.I.E. The semiconductor layer of pentacene was thermally evaporated in vaccum at a pressure of about 10$^{-8}$ Torr and a deposition rate 0.3$\AA$/sec. The fabricated devices exhibited the field-effect mobility as large as 0.07cm$^2$/Vs and on/off current ratio larger than 10$^{7}$

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Self-developed Efficiency Measurement System of Organic Light-Emitting Diodes (자체 개발한 유기 발광 소자의 효율 측정 시스템)

  • Han, Wone-Keun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.07a
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    • pp.537-538
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    • 2005
  • A way of measuring an efficiency of organic light-emitting diodes are studied. The efficiency is obtained from the current-voltage-luminance characteristics of the devices. Basically, number of charge carriers are obtained from the current-voltage characteristics, and the number of photons are obtained from the current of Si-photodetector. The organic light-emitting diodes are assumed as a lambertian light source and a program is made for calculating the efficiency. A device structure of ITO/TPD/$Alq_3$/Al is manufactured using thermal-vapor evaporation. This device is set into a measuring system and measured the efficiency. The efficiencies are measured using the lab-made program and commercially available equipments. The obtained values are similar to each other within 10% uncertainty.

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Fabrication of ZnO Nanowires by Green Technology (녹색기술을 이용하여 제작된 ZnO 나노선)

  • Lee, Geun-Hyoung
    • Korean Journal of Metals and Materials
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    • v.50 no.3
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    • pp.233-236
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    • 2012
  • ZnO nanowires were fabricated through thermal evaporation of Zn or ZnS powder using solar energy. The Zn or ZnS powder was heated and evaporated by sunlight. The sunlight was concentrated on the Zn or ZnS powder by a converging lens and then the Zn or ZnS powder was evaporated and oxidized in air. After oxidation, ZnO nanowires were fabricated in the focal point. Strong ultraviolet emission, which corresponds to the near band-edge emission, was observed from the ZnO nanowires synthesized using Zn powder as a source material. Meanwhile, green emission, related to intrinsic defects such as oxygen vacancies, prevailed for the ZnO nanowires fabricated using ZnS powder. No catalysts were used in the fabrication of the ZnO nanowires, which suggested the ZnO nanowires were grown by a vapor-solid mechanism.

Spatial and Temporal Variation Characteristics between Water Quality and Pollutant Loads of Yeong-il Bau(I) - Seasonal Variation of River Discharge and Inflowing Pollutant Loads - (영일만 유입오염부하량과 수질의 시ㆍ공간적 변동특성(I) - 하천유량과 유입오염부하량의 계절변동 -)

  • 윤한삼;이인철;류청로
    • Journal of Ocean Engineering and Technology
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    • v.17 no.4
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    • pp.23-30
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    • 2003
  • This study investigates the seasonal variation and spatial distribution characteristics of pollutant load, as executing the quality valuation of pollutant load inflowing into Yeong-il Bay from on-land including the Hyeong-san River. Annual total pollutant generating rate from Yeong-il Bay region are 202ton-BOD/day, 620ton-SS/day, 42ton-TN/day, and 16ton-TP/day, respectively. Particularly, the generating ration of the pollutant loads from the Hyeong-san River is greater than that of any other watershed of the Yeong-il Bay, of which BOd is about 78.2%, SS 88.5%, T-N 62.5%, T-P 73.1%, As calculating Tank model with input value of daily precipitation and evaporation of 2001 year in drainage basin of the Hyeong-san River, the estimated result of the annual river discharge effluence from this river is 830106㎥, As a result to estimating annual effluence rate outflowing at the rivers from each drainage basin. annual inflow pollutant rates are 10,633ton-BOD/year, 19,302ton-SS/year, 15,369ton-TN/year, 305ton-TP/year, respectively. The population congestion region of the Pohang-city is a greater source of pollutant loads than the Neang-Chun region with wide drainage area. Therefore, the quantity of TN inflowing into Yeong-il Bay is much more than T-P. The accumulation of pollutant load effluenced from on-land will happen at the inner coast region of Yeon-il Bay. Finally, We would make a prediction that the water quality will take a bad turn.

Electrical and Optical Properties with the Thickness of Cu(lnGa)$Se_2$ Absorber Layer (Cu(InGa)$Se_2$ 광흡수막의 두께에 따른 태양전지의 전기광학 특성)

  • Kim, S.K.;Lee, J.C.;Kang, K.H.;Yoon, K.H.;Park, I.J.;Song, J.;Han, S.O.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.05c
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    • pp.108-111
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    • 2002
  • CIGS film has been fabricated on soda-lime glass, which is coated with Mo film. by multi-source evaporation process. The films has been prepared with thickness of 1.0 ${\mu}m$, 1.75${\mu}m$, 2.0${\mu}m$, 2.3${\mu}m$, and 3.0${\mu}m$. X-ray diffraction analysis with film thickness shows that CIGS films exhibit a strong (112) preferred orientation. Furthermore. CIGS films exhibited distinctly decreasing the full width of half-maximum and (112) preferred peak with film thickness. Also, The film's microstructure, such as the preferred orientation, the full width at half-maximum(FWHM), and the interplanar spacing were examined by X-ray diffraction. The preparation condition and the characteristics of the unit layers were as followings ; Mo back contact DC sputter, CIGS absorber layer : three-stage coevaporation, CdS buffer layer : chemical bath deposition, ZnO window layer : RF sputtering, $MgF_2$ antireflectance : E-gun evaporation

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