• Title/Summary/Keyword: Evaporated Gold Film

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Measurement of Mechanical Properties of a Thermally Evaporated Gold Film Using Blister Test (블리스터 시험법을 이용한 열증착 금박막의 기계적 성질 측정)

  • Moon, Ho-Jeong;Ham, Soon-Sik;Earmme, Yun-Young;Cho, Young-Ho
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.20 no.3
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    • pp.882-890
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    • 1996
  • Mechanical properties, including Young's modulus, residual stress and rupture strength, of a thermally evaporated gold film have been measured form a blister test. In a theoretical study, the priniple of minimum potential energy and that of virtual work have been applied to the pressurized circular membrane problem, and load-deflection relations have been derived for typical membrane deflection mode of spheroidal shape. In an experimental study, circular gold membranes of 4800 A-thickness and 3.5mm diameter were fabricated by the silicon electropolishing technique. Mecahnical properties of the thin gold films were deduced from the load-deflection curves obtained by the blister test, Young's moduli, obtianed from blister test, have been in the range of 45-70 GPa, while those of bulk gold have been in the range of 78-80 GPa. Residual stresses in the evaporated gold films have been measured as 28-110MPa in tension, The rupture strength of the gold film has turned out to be almost equal to that of dental gold alloy (310-380MPa). It has been demonstrated that the present specimen fabrication method and blister test apparatus have been effective for simultaneous measurement of Young's modulus, residual stress and repture strength of thin solid films. Especially, the electropolishing technique employed here has provided a simple and practical way to fabricate thin membranes in a circular or an arbitrary shape, which could not be obtained by the conventional anisotropic silicon mecromachining technique.

Nano-Scale Patterning by Gold Self-Assembly on PS-PB-PS Triblock Copolymer Thin Film Templates (PS-PB-PS 삼블럭 공중합체 박막형판에서의 금의 자기응집에 의한 Nano-Scale 패턴형성)

  • Kim, G.;Libera, M.
    • Elastomers and Composites
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    • v.34 no.1
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    • pp.45-52
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    • 1999
  • This paper describes how the gold particles self assemble on the specific phase on the microphase separated block copolymer thin film and form a well ordered patterns. For this study, polystyrene-polybutadiene-polystyrene (PS-PB-PS) triblock copolymer (30wt % PS) thin films (${\sim}100nm$) having a cylindrical morphology were cast from 0.1wt% toluene solution to be used as polymer thin film templates. The films having either vertical PS cylinders or in-plane PS cylinders in PB matrix from each different solvent evaporation condition were obtained. Cross-sectional transmission electron microscopy(TEM) was used to study the surface and bulk morphologies of block copolymer thin films. Small amount of gold particles was evaporated on a block copolymer thin film template to obtain a nano-scale pattern. When an as-cast thin film template was used, gold particles preferentially self assemble on the low surface tension PB phase and a relatively well ordered pattern in nano-scale was produced. However, after the formation of a low surface energy PB rich layer upon annealing, a gold self-assembled pattern was not observed.

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Fabrication of Pentacene Thin Film Transistors and Their Electrical Characteristics (Pentacene 박막트랜지스터의 제조와 전기적 특성)

  • 김대엽;최종선;강도열;신동명;김영환
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1999.11a
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    • pp.598-601
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    • 1999
  • There is currently considerable interest in the applications of conjugated polymers, oligomers and small molecules for thin-film electronic devices. Organic materials have potential advantages to be utilized as semiconductors in field effect transistor and light emitting didoes. In this study, Pentacene thin film transistors(TFTs) were fabricated on glass substrate. Aluminum and Gold wei\ulcorner used fur the gate and source/drain electrodes. Silicon dioxde was deposited as a gate insulator by PECVD and patterned by R.I.E. The semiconductor layer of pentacene was thermally evaporated in vaccum at a pressure of about 10$^{-8}$ Torr and a deposition rate 0.3$\AA$/sec. The fabricated devices exhibited the field-effect mobility as large as 0.07cm$^2$/Vs and on/off current ratio larger than 10$^{7}$

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The Properties of Au-Al Alloy Thin Films with a Thermal Evaporator for Purple Gold (퍼플골드를 위한 열증착법으로 제조된 Au-Al 합금 박막의 물성연구)

  • Kim, Jun-Hwan;Song, Oh-Sung
    • Journal of the Korean Vacuum Society
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    • v.17 no.5
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    • pp.466-472
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    • 2008
  • Purple Gold is the alloy consisting of 78wt%Au-22wt%Al, and is expressed as a chemical formula, $AuAl_2$. Lately it is being used for the material of accessories or the decorative ornaments, being one of the colored golds having the peculiar purple color, like White Gold and Pink Gold. Purple Gold has the weak point in shaping through casting process due to the bad malleability and castability, being the intermetalic compound of Au and Al. Therefore, it is possible to produce the final product only by the cutting and the grinding process or to use it as a decorative coat with the thin film evaporation. This study implemented two kinds of thin film experiments. One is the case that heat treatment was made after Au and Al deposition evaporated separately with a weight ratio 78:22 on the 200nm$SiO_2$/Si substrate. The other is the case that the surface deposition was made through the vacuum evaporation, keeping the glass substrate temperature remain room temperature, using the bulk $AuAl_2$ as a source. The final film property was measured, focusing on the Purple Gold's color and thickness through the bare eye inspection, the microstructure analysis, the surface resistance analysis, the color difference analysis, and XRD analysis. Purple Gold was not formed, as the excessive surface agglomeration occurred, in case of being produced and treated thermally with 12.5nmAu/40nmAl/200nm$SiO_2$/Si structure. Our results suggest that of Purple Gold films, showing the same purple color as the bulk's, were successfully deposited with the direct thermal evaporation from the $AuAl_2$ bulk source.

Fabrication of Uncooled Pyroelectric Infrared Detector using Surface M Micromachining Technology (표면 마이크로 가공기술을 이용한 비냉각 초전형 적외선 검출소자 제작)

  • 장철영;고성용;이석헌;김동진;김진섭;이재신;이정희;한석룡;이용현
    • Proceedings of the IEEK Conference
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    • 2000.06b
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    • pp.115-118
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    • 2000
  • Uncooled pyroelectric infrared detectors based on BST(B $a_{-x}$S $r_{x}$Ti $O_3$) thin films have been fabricated by RF magnetron sputtering and surface Micromachining technology. The detectors form BST thin film ferroelectric capacitors grown by RF magnetron sputtering on N/O/N(S $i_3$ $N_4$/ $SiO_2$/S $i_3$ $N_4$) membrane. The sputtered BST thin film exhibits highly c-axis oriented crystal structure that no poling treatment for sensing applications is required. This is an essential factor to increase the yield for realization of an infrared image sensor. surface-Micromachining technology is used to lower the thermal mass of the detector by giving maximum sensor efficiency Gold-black is evaporated on top of the sensing elements used the thermal evaporator. fabricated uncooled pyroelectric infrared detectors is highly output voltage at the low temperature(1$^{\circ}C$).).).

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Electrical Characteristics of Pentacene Thin Film Transistors.

  • Kim, Dae-Yop;Lee, Jae-Hyuk;Kang, Dou-Youl;Choi, Jong-Sun;Kim, Young-Kwan;Shin, Dong-Myung
    • 한국정보디스플레이학회:학술대회논문집
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    • 2000.01a
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    • pp.69-70
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    • 2000
  • There are currently considerable interest in the applications of conjugated polymers, oligomers, and small molecules for thin-film electronic devices. Organic materials have potential advantages to be utilized as semiconductors in field-effect transistors and light-emitting diodes. In this study, pentacene thin-film transistors (TFTs) were fabricated on glass substrate. Aluminums were used for gate electrodes. Silicon dioxide was deposited as a gate insulator by PECVD and patterned by reactive ion etching (R.I.E). Gold was used for the electrodes of source and drain. The active semiconductor pentacene layer was thermally evaporated in vacuum at a pressure of about $10^{-8}$ Torr and a deposition rate $0.3{\AA}/s$. The fabricated devices exhibited the field-effect mobility as large as 0.07 $cm^2/V.s$ and on/off current ratio as larger than $10^7$.

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A STUDY ON THE ELECTRICAL CHARACTERISTICS IMPROVEMENTS OF PENTACENE-BASED ORGANIC THIN FILM TRANSISTORS (Pentacene을 이용한 유기 TFT의 전기적 특성 향상에 관한 연구)

  • Lee, Jong-Hyuk;Park, Jae-Hoon;Ryu, Se-Won;Kim, Hyung-Joon;Choi, Jong-Sun
    • Proceedings of the KIEE Conference
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    • 2001.07c
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    • pp.1515-1517
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    • 2001
  • In this work the electrical characteristics of organic TFTs with the semiconductor-insulator interfaces have been interested. Pentacene is used as an active semiconducting layer. The semiconductor layer of pentacene was thermally evaporated in vacuum at a pressure of about $2{\times}10^{-6}$ Torr and at a deposition rate of 0.3$\AA$/sec. Aluminium and gold were used for gate and source/drain electrodes. before pentacene is deposited on the insulator, the gate dielectric surfaces of two samples were rubbed with lateral and perpendicular to direction of the channel length respectively.

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ELECTRICAL CHARACTERISTICS OF ORGANIC THIN FILM TRANSISTORS USING FLEXIBLE SUBSTRATE (Flexible한 기판을 사용한 유기 박막 트랜지스터의 전기적 특성 연구)

  • Lee, Jong-Hyuk;Kang, Chang-Heon;Hong, Sung-Jin;Kwak, Yun-Hee;Choi, Jong-Sun
    • Proceedings of the KIEE Conference
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    • 2002.07c
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    • pp.1590-1592
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    • 2002
  • In this work the electrical characteristics of organic TFTs using organic insulator and flexible polyester substrate have been investigated. Pentacene and PVP(polyvinylphenol) are used as an active semiconducting layer and dielectric layer respectively. Pentacene was thermally evaporated in vacuum at a pressure of about $1{\times}10^{-6}$ Torr and at a deposition rate of $0.5{\AA}$/sec, and PVP was spin-coated. Aluminium and gold were used for gate and source/drain electrodes. 0.1mm thick flexible polyester substrate was used instead of glass or silicon wafer.

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The X-ray Detection and morphology Characteristics on Evaporation Temperature of amorphous Selenium based digital X-ray detector (비정질 셀레늄의 박막 제조공정에 따른 미세구조와 IV특성)

  • Gong, H.G.;Cha, B.Y.;Lee, G.H.;Kim, J.H.;Nam, S.H.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.05b
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    • pp.51-54
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    • 2002
  • Recently, due to its better photosensitivity in X-ray, the amorphous selenium based photoreceptor is used on digital direct method conversion material. Compared to other photoconductive material, amorphous selenium has good X-ray response characteristic and low leakage current. It has many parameters of detecting X-ray response on selenium. Among of them, it is well known that manufacture of a-Se is the most basic element. In this paper, we fabricated two types of amorphous selenium sample which had time variable. The one was fabricated continuous deposition sample and the other was step by step sample. Thickness of sample was $300{\mu}m$ and top electrode was evaporated gold. We investigated the leakage current and photo current of them and analysed their electrical characteristics. For analyzing morphology of samples, SEM and surface was pictured. We found that step by step deposition method could be applied for novel fabricating amorphous selenium film.

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High Tc Superconducting Microstrip Patch antenna ; Characterization of Superconducting Antenna using Non-Radiating Edge Feeding Technique (고온 초전도 마이크로스트립 패치 안테나; 비방사면 급전방식을 이용한 초전도 안테나 특성)

  • Chung, Dong-Chul;Park, Sung-Jin;Hwang, Jong-Sun;Park, Jong-Kwang;Han, Byoung-Sung
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.49 no.7
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    • pp.375-381
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    • 2000
  • In this paper, we described the characterization of High-Tc Superconducting(HTS) microstrip antenna using non-radiating edge feeding technique and reported the microwave properties of HTS antennas with temperature. To do this, we prepared the $YBa_2Cu_3O_{7-x}$ superconducting thin film on MgO substrate using pulse-laser deposition techniques. The HTS microstrip antenna using non-radiating feeding technique was fabricated using chemical wet-etching. Then it was compared with identical antenna patterned with evaporated gold. The diverse measured results have been reported in terms of the input impedance, resonant frequency and return loss. In additional, at around the critical temperature, the effect of kinetic inductance which affect the resonant characteristic of the HTS microstrip antenna was reported.

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