• 반도체디스플레이기술학회지
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• 제16권3호
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• pp.41-46
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• 2017

This study aims to select suitable co-solvents and to obtain optimal process conditions in order to improve process efficiency and productivity through experimental results obtained under various experimental conditions for the etching and rinsing process using liquid carbon dioxide and supercritical carbon dioxide. Acetone was confirmed to be effective through basic experiments and used as the etching solution for MEMS-wafer etching in this study. In the case of using liquid carbon dioxide as the solvent and acetone as the etching solution, these two components were not mixed well and showed a phase separation. Liquid carbon dioxide in the lower layer interfered with contact between acetone and Mems-wafer during etching, and the results after rinsing and drying were not good. Based on the results obtained under various experimental conditions, the optimum process for treating MEMS-wafer using supercritical CO2 as the solvent, acetone as the etching solution, and methanol as the rinsing solution was set up, and MEMS-wafer without stiction can be obtained by continuous etching, rinsing and drying process. In addition, the amount of the etching solution (acetone) and the cleaning liquid (methanol) compared to the initial experimental values can be greatly reduced through optimization of process conditions.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.859-862
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• 2001

This study describes a selective Ag etching solution for use with pattern on the surface of copper. This etching solution uses potassium iodide and potassium sulfate as the ligand that coordinates to the metal ions and ferricyanide as the oxidant. The etching rate was depended on the concentration of co-ligands and time. But the etching rate wasn't depended on the pH(2∼6), and oxidant(K$_3$Fe(CN)$\_$6/). Complete etching of silver can be achieved rapidly within 90sec for 4.46${\mu}$m thick metal films when aqueous solutions containing K$_3$Fe(CN)$\_$6/, K$_2$S$_2$O$\_$8/ and KI was used. This etching solution was characteristic of anisotropic etching.

• 소성∙가공
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• 제13권3호
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• pp.268-272
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• 2004

Transparent materials such as fused silica are widely utilized in optical and optoelectronics field because of its outstanding properties, such as transparency in a wide wavelength range, strong damage resistance for laser irradiation, and high thermal and chemical stability. In this study, we made a few micro patterns on the surface of fused silica plate using laser induced wet etching. KrF excimer laser was used as a light source. There were no burrs and micro cracks on the etched surface of fused silica and the flatness of the etched surface was fairly good. We investigated the influence of etchant upon the etch rate and quality in laser induced wet etching. Pyrene-acetone solution and toluene were used as etchant. In the side of etch rate, toluene solution was better than pyrene-acetone solution. But we made in wider range of energy density using pyrene-acetone solution. But pyrene-acetone solution gave us wider window of energy density for successful micro patterning.

• 한국표면공학회지
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• 제47권3호
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• pp.128-136
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• 2014

In the present study, we successfully developed an eco-friendly chemical etching solution and proper condition for plating on ABS material. The mechanism of forming Ni plating layer on ABS substrate is known as following. In general, the etching solution used for the etching process is a solution of chromic acid and sulfuric acid. The etching solution is given to the surface resulting in elution of butadiene group, so-called anchor effect. Such a rough surface can easily adsorb catalyst resulting in the increase of adhesion between ABS substrate and Ni plating layer. However a use of chromic acid is harmful to environment. It is, therefore, essential to develop a new alternative solution. In the present study, we proposed an eco-friendly etching solution composed of potassium permanganate, sulfuric acid and phosphoric acid. This solution was testified to observe the surface microstructure and the pore size of electrical Ni plating layer, and the adhesive correlation between deposited layers fabricated by electro Ni plating was confirmed. The result of the present study, the newly developed, eco-friendly etching solution, which is a mixture of potassium permanganate 25 g/L, sulfuric acid 650ml/L and phosphoric acid 250ml/L, has a similar etching effect and adhesion property, compared with the commercially used chromium acid solution in the condition at $70^{\circ}C$ for 5 min.

• JSTS:Journal of Semiconductor Technology and Science
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• 제13권6호
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• pp.668-675
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• 2013

We investigate the effect of the ageing time and etching time on the etching rate of SiGe mixed etching solution, namely 1 vp HF (6%), 2 vp $H_2O_2$ (30%) and 3 vp $CH_3COOH$ (99.8%). For this etching solution, we found that the etch rate of SiGe layer is saturated after the ageing time of 72 hours, and the selectivity of $Si_{0.8}Ge_{0.2}$ layer and Si layer is 20:1 at ageing time of 72 hours. The collapse was appeared at the etching time of 9min with etching solution of after saturation ageing time.

• 한국전기전자재료학회논문지
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• 제15권2호
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• pp.105-109
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• 2002

The wet etching characteristics of magnetic materials such as NiFe and CoFe were investigated in terms of etch rate and etch profile by using variouus etching solutions (etchants). Among the various etching solutions, HNO$_3$, HCl, and H$_2$SO$_4$were selected for the etching of magnetic materials and showed distinct results. In the case of NiFe films, faster etch rate were obtained with HNO$_3$solution. When NiFe films ere etched with HCl solution, white etch residues were found on the surface of etched films. From FEAES analysis of these etch residues, they were proved to be by-product from the reaction of NiFe with Cl element. CoFe thin films showed the similar trend to the case of NiFe films. They were etched fast in HNO$_3$ solution while Chl solution represented slow etching. The etch profiles of CoFe films showed smooth etch profile but revealed the partial etching around the patterns in HNO$_3$solution of relatively high concentration. It was observed that the etched surface was clean and smooth, and that white etch residues were also remained on the etched films.

• 한국표면공학회지
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• 제28권2호
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• pp.101-109
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• 1995

Electroetching rates of $FeCl_3$ solution were increased according to increasing solution temperature. Activation energy of electroetching at Be'36 and 5A/$dm^2$ condition was 28.3Kcal and also, at Be'46 and 5A/dm$^2$ condition was 33.2Kcal. At Be'36 concentration of $FeCl_3$ solution, electroetching rate were more higher than at Be'46 concentration. Surfaces of etched grooves obtained at 8A/$dm^2$ or higher current density in 46 Be' concentration of $FeCl_3$ solution were observed to be flat and smooth owing to suppressing chemical etching reaction. Distinctly etched boundaries became to be appeared at 2A/$dm^2$ in Be'41 electroetching condition by differential effects. In case of applying 8A/$dm^2$ current density to Be'46 of $FeCl_3$ solution, etching depth were 4 times and side etching were 6 times more than chemical etching case respectively.

• 한국표면공학회지
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• 제5권2호
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• pp.1-4
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• 1972

We have studied about the optimum chemical etching and sensitizing conditions of the plating on plastics. As specimen 'Mitzubishi Nobren MM2A' was used. The results were as follow. 1) The optimum chemical etching conditions. Etched the specimens for $10{\sim}40$ minutes at $70{\sim}80^{\circ}C$ with the etching solution of table 1, and for $10{\sim}15$ minutes at $65{\sim}70^{\circ}C$ with the etching solution of table 2 Table 1. Etching solution (I) Composition : $H_2SO_4(95%)-Component : 250 ml, Composition : $H_3PO_4(85%)$ - Component : 75ml, Composition : $K_2Cr_2O_7$ - Component : 12.5g, 2) The optimum sensitizing conditions. Sensitized the specimens for $60{\sim}90$ seconds at $25^{\circ}C$ with the sensitizing solution of table 3 Table 2. Etching solution (II) Composition : $H_2SO_4(95%)$ - Component : 22.5ml, Composition : $H_3PO_4(85%)$ - Component : 15ml, Composition : $CrO_3$ - Component : 105g, Composition : Water - Component : 150 ml, Table 3. Sensitizing solution Composition : $SnCl_2$ - Component : 9g, Composition : HCl(35%) - Component : 36ml, Composition : Water - Component : 300 ml

• 대한기계학회논문집A
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• 제25권12호
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• pp.1911-1918
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• 2001

Recently the non-destructive test technique which uses the grain boundary etching characteristics owing to the variation of material structures has been proposed. However, during in-serviced GEM test there are a lot of variables such as the changes of temperature and concentration of etching solution, the roughness condition of surface polished etc.. The purpose of this paper is to investigate the influences of these test variables on GEM test results in order to establish a reliable and sensitive of GEM evaluation technique. The experiments are conducted in various solution temperatures, 10$\^{C}$, 15$\^{C}$, 20$\^{C}$, and 25$\^{C}$ and in 70% and 100% concentrations of that, and in various surface roughnesses polished by #800, #2000, and 0.3㎛ alumina powder. Through the test with variables, it is verified that the decrease of temperature and concentration of etching solution and the coarsened surface roughness by not using polishing cloth and powder induce some badly and/or greatly influences on GEM test results like grain boundary etching width(W$\_$GB) and intersecting point ratio(N$\_$i/N$\_$0/). Therefore, to get reliable and good GEM test results, it must be prepared the surface of specimen polished by polishing cloth and 0.3㎛ alumina powder and the saturated picric acid solution having 25$\^{C}$ and be maintained the constant temperature(25$\^{C}$) during GEM test.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1996년도 추계학술대회 논문집
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• pp.334-337
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• 1996

Si anisotropic etching is a key technology for micromachining. The main advantages of tetramethyl ammonium hydroxide (TMAH)-based solution are their full compatibility with IC process. In this work the anisotropic etching of single crystal Si in a TMAH (($CH_3$)$_4$NOH) based solution was studied. The influence of the addition of IPA to TMAH solution on their etching characteristics was also presented. The crystal planes bounding the etch front and their etch rates were determined as a function of temperature, crystal orientation, and etchant concentration. The etch rates of (100) oriented Si crystal planes decreased linearly with increasing the IPA concentration, The etched (100) planes were covered by Pyramidal-shaped hillocks below 15 wt.%, but very smooth surfaces were obtained above 20 wt.%. The addition of IPA to TMAH solution leads to smoother surfaces of sidewalls etched planes.