• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.5
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• pp.389-395
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• 2005

The etching technology of the high aspect ratio contact(HARC) is necessary at the critical contact processes of semiconductor devices. Etching the $SiO_{2}$ contact hole with the sub-micron design rule in manufacturing VLSI devices, the unexpected phenomenon of 'profile tilting' or 'bottom distortion' is often observed. This makes a short circuit between neighboring contact holes, which causes to drop seriously the device yield. As the aspect ratio of contact holes increases, the high C/F ratio gases, $C_{4}F_{6}$, $C_{4}F_{8}$ and $C_{5}F_{8}$, become widely used in order to minimize the mask layer loss during the etching process. These gases provide abundant fluorocarbon polymer as well as high selectivity to the mask layer, and the polymer with high sticking yield accumulates at the top-wall of the contact hole. During the etch process, many electrons are accumulated around the asymmetric hole mouth to distort the electric field, and this distorts the ion trajectory arriving at the hole bottom. These ions with the distorted trajectory induce the deformation of the hole bottom, which is called 'profile tilting' or 'bottom distortion'. To prevent this phenomenon, three methods are suggested here. 1) Using lower C/F ratio gases, $CF_{4}$ or $C_{3}F_{8}$, the amount of the Polymer at the hole mouth is reduced to minimize the asymmetry of the hole top. 2) The number of the neighboring holes with equal distance is maximized to get the more symmetry of the oxygen distribution around the hole. 3) The dual frequency plasma source is used to release the excessive charge build-up at the hole mouth. From the suggested methods, we have obtained the nearly circular hole bottom, which Implies that the ion trajectory Incident on the hole bottom is symmetry.

• Journal of the korean academy of Pediatric Dentistry
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• v.33 no.4
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• pp.653-660
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• 2006

Fuji VII is a glass-ionomer cement specially targeted for early protection in erupting first and second molars. Properties of Fuji VII such as very high level of fluoride release, low viscosity and no need to preliminarily etch the substrate would be useful to erupting molars with primary pit and fissure caries or hypoplastic area for preventive goal or remineralization. The purpose of this study were to evaluate remineralization of Fuji VII glass ionomer cement and to compare with one of other restorative materials such as conventional glass ionomer cement, resin-modified glass ionomer cement, compomer and composite resin. Forty-two extracted human molars were used for this study. All teeth were immersed in demineralizing solution for 48 hours after Class V cavity preparation was made on sound proximal surface. The teeth were randomly divided into six groups and restored with Fuji VII, Fuji II, Fuji II LC improved, F2000, $Filtek^{TM}$ Z250 and control group was unrestored. The middle area with $130{\pm}20{\mu}m$ thickness was separated from specimen using microtome and demineralized area was photographed under polarized microscope. Separated area was relocated to specimen and stored in artificial saliva, After four weeks, changes of demineralized area were observed and compared to them restorated immediately. The results from the this study can be summarized as follows ; 1. Fuji VII, Fuji II, Fuji II LC improved have more prominent remineralization effect than F2000, $Filtek^{TM}$ Z250, control group. 2. No significant differences in remineralization effect are seen between Fuji VII and Fuji II, Fuji II LC improved.