• Journal of the Korean Crystal Growth and Crystal Technology
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• v.34 no.1
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• pp.8-15
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• 2024

The CaF₂ single crystal has notable characteristics such as a large band gap (12 eV), excellent transparency over a wide wavelength range, low refractive index and dispersion. Due to these outstanding properties, CaF₂ single crystal has considered as a promising material for short-wavelength light sources in recent lithography processes. However, there is an inherent birefringence of the material at 157 nm and the resulting aberration can be compensated for through the combination of the (100) plane and the (111) plane. Therefore, it is necessary to investigate the characteristics according to the plane. In this study, we analyzed crystallinity, optical properties of commercial CaF₂ single crystal wafers grown by the Czochralski method. In particular, through chemical etching under various conditions, it was confirmed that the shape of etch pits appears differently depending on the plane and the shape and array of specific etch pits affected by dislocations and defects were examined.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.4
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• pp.344-349
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• 2006

A sublimation epitaxial method, referred to as the Closed Space Technique (CST) was adopted to produce thick SiC epitaxial layers for power device applications. We aimed to systematically investigate the dependence of SiC epilayer quality and growth rate during the sublimation growth using the CST method on various process parameters such as the growth temperature and working pressure. The etched surface of a SiC epitaxial layer grown with low growth rate $(30{\mu}m/h)$ exhibited low etch pit density (EPD) of ${\sim}2000/cm^2$ and a low micropipe density (MPD) of $2/cm^2$. The etched surface of a SiC epitaxial layer grown with high growth rate (above $100{\mu}m/h$) contained a high EPD of ${\sim}3500/cm^2$ and a high MPD of ${\sim}500/cm^2$, which indicates that high growth rate aids the formation of dislocations and micropipes in the epitaxial layer. We also investigated the Schottky barrier diode (SBD) characteristics including a carrier density and depletion layer for Ni/SiC structure and finally proposed a MESFET device fabricated by using selective epilayer process.

• Journal of the Semiconductor & Display Technology
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• v.2 no.2
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• pp.5-8
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• 2003

In this study, as Cu diffusion barrier, tantalum nitrides were successfully deposited on Si(100) substrate and $SiO_2$ by plasma assisted atomic layer deposition(PAALD) and thermal ALD, using pentakis (ethylmethlyamino) tantalum (PEMAT) and NH$_3$ as precursors. The TaN films were deposited at $250^{\circ}C$ by both method. The growth rates of TaN films were 0.8${\AA}$/cycle for PAALD and 0.75${\AA}$/cycle for thermal ALD. TaN films by PAALD showed good surface morphology and excellent step coverage for the trench with an aspect ratio of h/w -1.8:0.12 mm but TaN films by thermal ALD showed bad step coverage for the same trench. The density for PAALD TaN was 11g/cmand one for thermal ALD TaN was 8.3g/$cm^3$. TaN films had 3 atomic % carbon impurity and 4 atomic % oxygen impurity for PAALD and 12 atomic % carbon impurity and 9 atomic % oxygen impurity for thermal ALD. The barrier failure for Cu(200 nm)/TaN(10 nm)/$SiO_2$(85 nm)/ Si structure was shown at temperature above $700^{\circ}C$ by XRD, Cu etch pit analysis.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.5 no.2
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• pp.87-93
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• 1995

Strontium titanate single crystal was grown by floating wne method. Growth conditions are as follows; at air atmosphere, rotation rate of upper and lower shafts were 20 - 25 rpm, 15 - 20 rpm respectively and growth rate was 3 mmlhr. As grown crystal was light brown color and transparent. After annealing, color was faded away. Growth direction was [112] direction and it was confirmed that grown crystal has $SrTiO_3$single phase and stoichiometric composition by XRD and EDS. Etch pit pattern was investigated after chemical etching in $350^{\circ}C$, KOH solution for 5 min and dielectric constant was measured at the range of room temperature ~ $350^{\circ}C$ .

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.338-339
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• 2005

The wider surface of the aluminum foil, electrochemically very important and it is necessary to increase the surface area. A study has been made of the fabrication condition for etching cube texture of high purity aluminium foil and of electrochemical etching of the aluminium foil. In the present work, it is shown there exists a relation between the influence of the pre-treatment time in the NaOH & HCI solution and $H_2SO_4$ concentration in the conversion solution. Also effect of temperature during AC etching was also studied. Result of the etched aluminum film is shown in the typical SEM images. Its electrochemical characteristics were investigated by cyclic voltammetry. And effects of current density and frequency is also reported. Cyclic voltammogram showed that the protective oxide film was formedon the inner surfaces of etch pit. the frequency influence resistance of oxide film in AC etching.

• Applied Chemistry for Engineering
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• v.9 no.4
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• pp.463-468
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• 1998

When sulfuric acid was added in HCl etching solution, corrosion of aluminum metal was inhibited by the chemical adsorption of sulfate ions. In the presence of $SO_4^{-2}$, cyclic voltammetry showed that the protective oxide film was formed on the inner surfaces of etch pits and, pit density was increased by nucleation on both the aluminum surface and the pits inside. Structure and distribution of etch pits found in AC etching of aluminum were strongly influenced by the concentration of $SO_4^{-2}$ and the amount of cathodic pulse charging. Below $0.8mC/cm^2$ of cathodic pulse charging, oxide films formed inside actively dissolving pits indicated the higher resistance to pit nucleation as the concentration of $SO_4^{-2}$ increases. However, the structural change of oxide films occurred above the $0.8mC/cm^2$ charging and the effect of $SO_4^{-2}$ was minimized, and it resulted in the rapid formation of etch pits.

• Journal of the Korean Institute of Telematics and Electronics
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• v.21 no.5
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• pp.41-45
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• 1984

The production of high-quality epitaxial layers almost always involves an etching step of silicon substrates with HCl gas prior to epitaxy, In this work, an investigation has been made on the etch rate and the etch-pit formation as a function of HCl gas concentration and etch temperature at atmospheric pressure (1 atm.) and reduced pressure (0.1 atom.). As a result, it is found that the etch rate is proportional to the square of the HCI gas concentration (XHC12) and the apparent ativation energy is between 0 and 111 Kcal/mole for both ammospheric and reduced pressure operation. From these results, it is expected that the HCI etching of silicon in reduced pressure operation proceeds, as in atmospheric operation, via the reaction ; Si + 2HCl ↔ SiCl2 + H2.

• Proceedings of the IEEK Conference
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• 2000.06b
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• pp.68-71
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• 2000

In this paper, we have measured the oxygen contents by FTIR in silicon wafer various process technology(slicing, lapping, polishing). The measured data are also compared with the data of etching process(KOH, Bright etching). Also we have measured the surface morpology in backside silicon wafer after etching treatment and etch pit density due to OISF after 4 step high temperature annealing process with optical microscope.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.20 no.4
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• pp.164-167
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• 2010

Bulk GaN single crystal with 1.5 mm thickness was successfully grown by hydride vapor phase epitaxy (HVPE) technique. Free-standing GaN substrates of $10{\times}10,\;15{\times}15$ mm size were fabricate after lift-off of sapphire substrate and their optical properties were characterized properties for device applications. X-ray diffraction patterns showed (002) and (004) peak, and the FWHM of the X-ray rocking curve (XRC) measurement in (002) was 98 arcsec. A sharp photoluminescence spectrum at 363 nm was observed and defect spectrum at visible range was not detected. The hexagonal-shaped etch-pits are formed on the GaN surface in $200^{\circ}C\;H_3PO_4$ at 5 minutes. The defect density calculated from observed etch-pits on surface was around $5{\times}10^6/cm^2$. This indicates that the fabricated GaN substrates can be used for applications in the field of optodevice, and high power electronics.

• Journal of Sensor Science and Technology
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• v.12 no.6
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• pp.282-288
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• 2003

We report the growth of HgCdTe by metal organic vapor phase epitaxy (MOVPE), using (211)B CdTe/Si substrates grown by molecular beam epitaxy (MBE). The surface morphology of these films is very smooth with hillock free. The etch pit densities (EPD) and full widths at half maximum (FWHM) of x-ray rocking curves exhibited that the crystalline quality of HgCdTe epilayer on MBE grown CdTe/Si was improved compare to HgCdTe on GaAs substrate. The Hall parameters of undoped HgCdTe layers on CdTe/Si showed n-type behavior with carrier concentration of $8{\times}10^{14}/cm^3$ at 77K. But HgCdTe on GaAs showed p-type conductivity due to in corporation of p-type impurities during GaAs substrate preparation. It is thought that these results are applicable for large area HgCdTe forcal plane arrays of $1024{\times}1024$ format and beyound.