• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.368-368
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• 2010

Monolayers of graphite can be grown by fine controlled surface graphitization on the surfaces of various metallic and semiconducting materials. Epitaxial graphene grown on polished silicon carbide crystal surfaces has drawn much attention due to well known vacuum annealing procedures from surface analysis methods, especially scanning tunneling microscopy(STM) and scanning tunneling spectroscopy(STS). In this study, we have grown single layer and few layer graphene on silicon terminated 6H-SiC(0001) crystals. The growth of graphene layers were observed by low energy electron diffraction(LEED) patterns. Scanning tunneling microscopy and spectroscopy measurements were performed to illustrate the electronic structure which may display some clue on the influence of the underlying structure. Spatially resolved STS results acquired at the edges of epitaxial graphene show in detail the electron density of states, which is compared to theoretical calculations. STM measurements were also done on graphene films grown by chemical vapor deposition(CVD) and transferred onto a SiC(0001) crystal. These observations may provide a hint for the understanding of carrier scattering at the edges.

• Korean Journal of Crystallography
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• v.6 no.1
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• pp.49-55
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• 1995

The oriented islands of cubic galium nitride are grown on the (0001) surface of hexagonal GaN epitaxial films by halide vapour phase epitaxial process. The mutual orientation of cubic β-GaN and hexagonal α-GaN phase was observed as : [110](111) β-GaN//[1120](0001) α-GaN. Trigonally faced islands of β-GaN occupy the twined positions in relation to (111) plane in parallel to the film surface. The band gap value for β-GaN determuned from photo and local catchodoluminescent measurments is estimated to be 3.18±0.30eV at room temperature.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.182-182
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• 1999

The chemisorption effect of CO on the Ni/Cu(001) surface was investigated using LEED(Low Energy Electron Diffraction) and EELS(Electron Energy Loss Spectrscopy0 under the UHV conditions. after mounting the Cu(001) single crystal in the UHV chamber (base pressure 1$\times$10-10Torr), a clean surface was obtained after a few cycles of repeated Ar+ ion sputtering and annealing at about 40$0^{\circ}C$. The epitaxial thin Ni films were formed on the Cu(001) by evaporation from 99.999% Ni block. The pseudomorphic growth and the orderness of the thin Ni films were monitored by c(2$^{\circ}C$2) LEED pattern. CO adlayers on Ni epitaxial thin films were prepared by dosing pure CO has through a leak valve. After CO adsorpton at room temperature, two pairs of peaks were observed by EELS, whose relative intensities are changed as the film thickness is varied and time is elapsed. These two pair of peaks are likely related to different bonding sites (-top and bridge sites) of C-Ni as well as C-O vibration. Experimental results and qualitative interpretation of the spectra wille be discussed. The possibility of using EELS in combination with probe species (CO) to investigate the nature of thin film growth is mentioned. We will report the experimental result of O2 dosage on Ni film and interaction of CO and O2.

• Proceedings of the Korean Magnestics Society Conference
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• 2007.05a
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• pp.266.2-266.2
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• 2007

• Proceedings of the Korean Magnestics Society Conference
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• 2007.05a
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• pp.42.2-42.2
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• 2007

• Proceedings of the Korean Magnestics Society Conference
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• 2007.05a
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• pp.27.1-27.1
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• 2007

• Proceedings of the Korean Vacuum Society Conference
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• 2002.02a
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• pp.92-92
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• 2002

• Proceedings of the Korean Vacuum Society Conference
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• 1997.07a
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• pp.80-80
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• 1997

• Proceedings of the Korean Ceranic Society Conference
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• 2000.04a
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• pp.130.1-130.1
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• 2000

• Proceedings of the Korean Ceranic Society Conference
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• 2003.04a
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• pp.192.1-192
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• 2003