• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1997년도 Proceedings of the 12th KACG Technical Meeting and the 4th Korea-Japan EMGS (Electronic Materials Growth Symposium)
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• pp.253-259
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• 1997

The iron doped GaAs single crystals were grown by liquid phase epitaxial method and its some physical properties were evaluated with a view to investigate the crystal quality and emission property. The isomer shift of 0.303mm/sec is calculated from low-temperature M ssbauer spectroscopy and we know that charge state of iron ion is 3+ in GaAs crystal. In low temperature photoluminescence, the deep emission bands with wide-line width have been observed at 0.99eV and 1.15eV in addition to sharp excitonic peaks. We attributed that these deep emissions are originated from substitutional Fe-acceptor which has charge state of 3+ and 2+, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.115-115
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• 2009

Epitaxial ZnO film was grown on Si(111) substrate with oxidazed CrN buffer by plasma-assisted molecular beam epitaxy (PAMBE). The growth and structural properties are investigated. The single crystalline growth was revealed by in-situ RHEED analysis. Crystalline quality of ZnO film grown on oxidized CrN buffer was investigated by the X-ray rocking curves. The FWHMs of (0002) XRCs was $1.379^{\circ}$. This value was smaller than the ZnO film grown directly on (111) Si substrate.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 춘계학술대회 논문집
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• pp.26-30
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• 1995

We describe the preparation and characterization of epitaxial thin films made with high temperature superconductor, $YBa_2Cu_3O_{7-\delta}$. The influence of processing parameters for YBCO thin films on MgO substrates in-situ grown by the pulsed laser deposition, including parameters of a laser beam energy, oxygen pressure, substrate temperature, target-substrate dis-tance is discussed. The characteristics of YBCO thin films were analyzed by using XRD, R-T measurement, AFM, crosssectional TEM, and RBS. For examples of microwave device applications, The fabrication and characterization of the microstrip lowpass filter and bandpass filter are also presented.

• 전기의세계
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• 제25권5호
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• pp.63-69
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• 1976

Among various types of photo-electric energy conversion element which can transfer solar energy into electric energy through the photo voltaic effect, Si solar cells were investigated on photoelectric characteristics, improvements of its efficiency and economical evaluation for its production cost. To study the above subjects, we decided best conditions on fabricating of thin film Si solar cell by epitaxial growth and knew that the thin solar cell by epitaxial growth was more efficient than that by diffusion process. And also higher photo voltaic output was obtained as a effect of SiO as antireflection coating by several methods, i.e. vacuum evaporating techniques of electrode to decrease the contact resistance and to form best ohmic contact, and concentration techniques of sun's ray by lenz or both-sided illumination through special structure for reflection using mirrors.

• 한국결정성장학회지
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• 제14권5호
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• pp.215-219
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• 2004

ZnO 에피박막을 사파이어 기판의 (0001)면 상에 RF magnetron sputtering 법으로 성장하였다. 박막의 성장속도는 약 0.1~0.2$\mu\textrm{m}$/hr 였으며, 기판온도가 $600^{\circ}C$일 때, 약 400~500nm두께의 단결정상의 박막을 성장할 수 있었다. 성장된 단결정상 박막에 대하여 XRD분석과 TEM을 이용하여 박막의 품질과 미세구조를 평가하였다.

• 한국세라믹학회지
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• 제36권10호
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• pp.1075-1079
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• 1999

LaSrCoO3 thin films were spin-coated onto the SrTiO3(100) substrates by the chemical solution process. X-ray diffraction $\theta$-2$\theta$ scans and X-ray diffraction $\beta$ scans were used to determine the crystallinity and in -plane alignment behavior of the films. The X-ray diffraction pattern showed the film obtained by annealing at 80$0^{\circ}C$ was highly oriented. The X-ray diffraction pole-figure analysis and reciprocal-space mapping (2$\theta$-$\Delta$$\omega$ scans) of the resulting film showed that the film comprising the pseduocubic phase had an epitaxial relationship with the SriO3 substrate.

• 한국항해학회지
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• 제16권2호
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• pp.21-27
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• 1992

Shortening the lasing wavelength(particularly below infrared ; the visible region) of laser diodes is very attractive because it can provide a wide range of applications in the fields of optical information, measurement, sensor, the development of medical instrument, and optical communication through plastic fibers. According to the recent researches on the field, InGaAsP/GaAs was suggested as a material for red-light laser. In this study, in order to grow InGaAsP/GaAs epitaxial layer on InGaAsP/GaAs by LPE, we used GaP and InP two phase solution technique for 670nm and 780 nm region, respectively. Through the X-ray diffraction measurement for the epitaxial layer grown from the experiments, we found that the lattice mismatch of $In_{0.46}Ga_{0.54}As_{0.07}P_{0.93}$/GaAs and $In_{0.19}Ga_{0.81}As_{0.62}P_{0.38}$/GaAs was about +0.3% and +0.1%, respectively.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1994년도 하계학술대회 논문집 C
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• pp.1448-1450
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• 1994

The breakdown voltages of punchthrough-mode diodes with cylindrical junction are analytically calculated, The proposed method, which is based on th Gauss's law, estimates the lateral expansion of the depletion region as well as the electric field and the charge distribution. The proposed method is given in terms of epitaxial layer width, the epitaxial layer doping concentration, and curvature radius of the junction edge. The calculation results agree well with the MEDICI simulation results for various device parameters.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.1036-1038
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• 2001

The sapphire orientation dependence of the crystallization of ZnO thin films has been studied using real-time synchrotron x-ray scattering. The amorphous ZnO thin films with a 2400-${\AA}$-thick were grown on sapphire(110) and sapphire(001) substrates by radio frequency magnetron sputtering at room temperature. The amorphous ZnO films were crystallization into epitaxial ZnO(002) grains both on the sapphire(110) and on the sapphire(001) substrates. The epitaxial quality, such as mosaic distribution and crystal domain size, of the ZnO grains on the sapphire(110) is high, similar to that of the ZnO grains on the sapphire(001). With increasing the annealing temperature to 600$^{\circ}C$, the mosaic distribution and the crystal domain size of ZnO(002) grains in the film normal direction was improved and decreased, respectively.

• Journal of Korean Vacuum Science & Technology
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• 제3권2호
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• pp.139-144
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• 1999

Hydrogen concentration depth profiles in homoepitaxial Si(001) films grown from hyper-thermal Si beams generated by ultrahigh vacuum (UHV) ion-beam sputtering have been measured by nuclear reaction analyses as a function of film growth temperature and deposition rate. Bulk H concentrations CH in the crystalline Si layers were found tio be below detection limits, 1${\times}$1019cm-3, with no indication of significant H surface segregation at the crystalline/amorphous interface region. This is quite different than the case for growth by molecular-beam epitaxy (MBE) where strong surface segregation was observed for similar deposition conditions with average CH values of 1${\times}$1020cm-3 in the amorphous overlayer. The markedly decreased H concentrations in the present experiments are due primarily to hydrogen desorption by incident hyperthermal Si atoms. Reduced H surface coverages during growth combined with collisionally-induced filling of interisland trenches and enhanced interlayer mass transport provide an increase in critical epitaxial thicknesses by up to an order of magnitude over previous MBE results.