• Progress in Superconductivity
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• v.7 no.2
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• pp.152-157
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• 2006

New precursor solution with dichloroacetic acid (DCA) was developed for fabricating high $J_c$ REBCO film. DCA based-precursor solution was coated on $LaAlO_3$(001) substrate by dip coating method. Processing parameters such as oxygen partial pressure, water vapor, ramping rate and pyrolysis temperature were controlled in order to obtain a good epitaxial film. The film with thickness of 0.5 micrometer was obtained by single coating and no crack was observed at calcined films. Oxygen partial pressure was controlled in the range of $100{\sim}1,000$ ppm and conversion heat treatment was carried out at the temperature range of $705-765^{\circ}C$. A critical transition temperature ($T_c$) of 90 K and a critical transport current density ($J_c$) of $>0.5\;MA/cm^2$ (77 K and self-field) were obtained for the GdBCO film. It is thought that fluorine-free MOD solution using DCA is promising precursor solution for fabricating high quality REBCO films.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.313-313
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• 2012

ZnO and $SnO_2$, well-known wide direct band-gap semiconductors, have been considered as the most promising functional materials due to their highly sensitive gas sensing and excellent optical properties. ZnO/$SnO_2$ epitaxial hetrostructure exhibited unique luminescence properties in contrast with individual tetra-pod ZnO and $SnO_2$ nanostructures. Polycrystalline $SnO_2$-based samples $Zn_xSn_{1-x}O_2$(x=0, 0.01, 0.03, 0.05) were prepared by solid state reaction and eco-friendly hydrothermal techniques. Scanning electron microscopy equipped with electron dispersive x-ray spectra confirms the formation of near stoichiometric $Zn_xSn_{1-x}O_2$ nanorods of diameter ~10 nm. X-ray diffraction analysis revealed the rutile structure, except for x=0.07, which may have a small part of $Zn_2SnO_4$ as a secondary phase.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.126-126
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• 2012

Copper is considered to be the most promising substrate, especially Cu(111), for the growth of high quality monolayer graphene. Since interactions between graphene and Cu substrates will influence on the orientation, quality, and electrical properties of synthesized graphene, we experimentally determine a weak interfacial interaction between Cu(111) substrate and graphene using angle-resolved photoemission spectroscopy (ARPES). The measurement was conducted from the initial stage to the formation of a graphene monolayer. Graphene growth was initiated along the Cu(111) lattice, and two rotated graphene domains were grown, where no significant differences were observed in the band structure depending on different orientations. The interaction, including electron transfer from the Cu(111) to graphene, was limited between the Shockley state of the Cu(111) surface and the ${\pi}$ bands of graphene. These results provide direct information on the growth behavior and interactions between the Cu(111) and graphene.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.433-433
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• 2011

Since the concept of graphene was established, it has been intensively investigated by researchers. The unique characteristics of graphene have been reported, the graphene attracted a lot of attention for material overcomes the limitations of existing semiconductor materials. Because of these trends, economical fabrication technique is becoming more and more important topic. Especially, the epitaxial growth method by sublimating the silicon atoms on Silicon carbide (SiC) substrate have been reported on the mass production of high quality graphene sheets. Although SiC exists in a variety of polytypes, the 3C-SiC polytypes is the only polytype that grows directly on Si substrate. To practical use of graphene for electronic devices, the technique, forming the graphene on 3C-SiC(111)/Si structure, is much helpful technique. In this paper, we report on the growth of graphene on 3C-SiC(111) surface. To investigate the morphology of formed graphene on the 3C-SiC(111) surface, the radial distribution function (RDF) was calculated using molecular dynamics (MD) simulation. Through the comparison between the kinetic energies and the diffusion energy barrier of surface carbon atoms, we successfully determined that the graphitization strongly depends on temperature. This graphitization occurs above the annealing temperature of 1500K, and is also closely related to the behavior of carbon atoms on SiC surface. By analyzing the results, we found that the diffusion energy barrier is the key parameter of graphene growth on SiC surface.

• Korean Journal of Materials Research
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• v.5 no.3
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• pp.297-309
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• 1995

본 연구에서는 이온선보조증착법에 의해 Si(100)기판위에 정합성장된 $Si_{0.5}$Ge_{0.5}$층의 핵성성과 성장을 고찰하였다. 성장층에 대한 AFM(Atomic Force Microscopy), RHEED(Reflection High Energy Electron diffraction) 등의 분석결과 Si(100)기판위에 이온선보조증착에 의하여 성장된 $Si_{0.5}$Ge_{0.5}$층은 Stranski-Kranstanov(SK)기구로 성장되며, 300eV, 10 $\mu$A/$cm^{2}$의 Ar이온선을 조사시키는 경우 결정성이 향상되었고, SK 성장 방식의 임계두께가 증가하였다. Ar 이온선 조사에 의해 MBE에 의한 정합성장온도(55$0^{\circ}C$-$600^{\circ}C$)보다 훨씬 낮은 20$0^{\circ}C$에서 정합성장이 가능하였으며, $x_{mn}$값은 10.5%로 MBE에 의한 정합성장시 보고된 $x_{mn}$ 값보다 낮았다. 이온충돌에 의해 발생한 3차원 island의 분해와 표면확산의 증가가 $Si_{0.5}$Ge_{0.5}$층의 성장에 현저한 영향을 미쳤으며, 이온충돌의 영향은 3차원 island의 생성보다 3차원 island의 분해가 더 안정한 낮은 증착온도에서만 관찰되었다.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2003.02a
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• pp.287-290
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• 2003

For microwave device applications, c-axis oriented high temperature superconducting YBa$_2$Cu$_3$O$_{7-{\delta}}$ (HTS-YBCO) epitaxial thin films on the r-cut sapphire substrate(Al$_2$O$_3$) were prepared. In order to reduce the lattice mismatch with a substrate and to enhance the crystallity of HTS thin films, CeO$_2$ buffer layer on the r-cut sapphire substrate was grown by the RF-magnetron sputtering. The YBCO films on the CeO$_2$ buffer layer were deposited using the pulsed-laser deposition (PLD) method. These HTS YBCO /CeO$_2$/Al$_2$O$_3$ multilayer thin films(30 $\times$ 30 mm$^2$) routinely exhibited a critical temperature(T$_{c}$) of 89 K from the R-T measurement. Using HTS YBCO/CeO$_2$ /Al$_2$O$_3$ multilayer thin film. We fabricated and characterized the microwave passive devices (planar type filters) with cryopack-age such as the coupled -line type low-pass filter (LPF) and the open-loop meander type bandpass filter (BPF).filter (BPF).).

• Journal of the Korean Ceramic Society
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• v.45 no.6
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• pp.358-362
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• 2008

$BiFeO_3$ films were hetero-epitaxially grown on $SrTiO_3$ substrate with a various orientation by pulse laser deposition. $BiFeO_3$ films grown on (111) $SrTiO_3$ substrate have a rhombohedral structure, identical to that of single crystals. On the other hand, films grown on (110) or (001) $SrTiO_3$ substrate are monoclinically distorted from the rhombohedral structure due to the epitaxial constraint. The easy axis of spontaneous polarization is close to [111] for the variously oriented films. Dramatically enhanced polarization and magnetization have been found for $BiFeO_3$ thin films grown on $SrTiO_3$ substrate comparing to that of $BiFeO_3$ crystals. The results are explained in terms of an epitaxially-induced transition between cycloidal and homogeneous spin states, via magneto-electric interactions.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.151-154
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• 2002

AP/RPCVD를 이용하여 $650^{\circ}C$의 저온에서 실리콘-게르마늄의 선택적 단결정 성장 (Selective Epitaxy Growth: SEG) 을 수행하였다. 본 실험에서는 $SiH_4$, $GeH_4$ 그리고 HCl 가스를 사용하여 잠입시간 동안 실리콘-게르마늄막을 성장시키고 연속해서 HCI 가스만을 주입하여 산화막 위에 형성되어진 작은 결정입자들을 식각하는 공정을 반복적으로 수행하였다. HCl 의 식각에 의해 한 주기의 잠입기 후에도 다시 잠입기가 존재함을 확인하였고, 이 성장법을 통하여 한 주기의 잠업시간 동안 증착할 수 있는 두께 이상으로 실리콘-게르마늄막의 선택적 성장이 가능하였다. 이는 저온 선택적 실리콘-게르마늄 성장 시 RPCVD에서 보이는 낮은 선택성과 $SiH_4$의 짧은 장입시간으로 인해 원하는 두께까지 확보하기 힘든 단점을 극복한 것이다. 선택성을 향상시키기 위해 실리콘-게르마늄 증착중 주입된 HCI의 유량에 따라 잠입시간과 증착속도에 영향을 주었으며, 연속공정을 위한 식각공정은 20sccm의 HCI을 20초간 주입하여 선택성을 유지하였다. 또한 보론 불순물의 첨가가 선택적으로 성장되는 박막의 결정성에 미치는 영향도 분석되었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.08a
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• pp.59-62
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• 2003

Our Zn diffusion into n-type $GaAs_{0.60}P_{0.40}$ used ampoule-tube method to increase IV. N-type epitaxial wafers were preferred by $H_2SO_4$-based pre-treatment. $SiO_2$ thin film was deposited by PECVD for some wafers. Diffusion times and diffusion temperatures respectability are 1, 2, 3 hr and 775, $805^{\circ}C$. LED chips were fabricated by the diffused wafers at Fab. The peak wavelength of all chips showed about 625~650 nm and red color. The highest IV is about 270 mcd at the diffusion condition of $775^{\circ}C$, 3h for the wafers which didn't deposit $SiO_2$ thin films. Also, the longer diffusion time is the higher IV for the wafers which deposit $SiO_2$ thin films.

• Transactions on Electrical and Electronic Materials
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• v.11 no.2
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• pp.54-60
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• 2010

Polymer-assisted deposition is a chemical solution route to high quality thin films. In this process, the polymer controls the viscosity and binds metal ions, resulting in a homogeneous distribution of metal precursors in the solution and the formation of crack-free and uniform films after thermal treatment. We review our recent effort to epitaxially grow metal-nitride thin films, such as hexagonal GaN, cubic TiN, AlN, NbN, and VN, mixed-nitride $Ti_{1-x}Al_xN$, ternary nitrides tetragonal $SrTiN_2$, $BaZrN_2$, and $BaHfN_2$, hexagonal $FeMoN_2$, and nanocomposite TiN-$BaZrN_2$.