• Journal of the Korean Society of Fisheries and Ocean Technology
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• v.27 no.1
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• pp.13-20
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• 1991

This paper describes the fish-density dependence of the mean backscattering strength with aggregations of encaged, free-swimming fish of known density in relation to the experimental verification of echo-integration technique for estimating the density of fish shoals. In this experiment, various numbers of gold crussian, Carassius burgeri burgeri, with a mean length of 18.5cm and a mean weight of 205.9g, were introduced into a net cage of approximately 0.76m super(3). During the backscattering measurements. the cage was suspended on the sound axis of the 50kHz transducer having a beam width of 33 degrees at -3dB downpoints. The volume backscattering strengths from fish aggregations were measured as a function of fish density. Data acquisition, processing and analysis were performed by means of the microcomputer-based sonar-echo processor including a FFT analyzer. The calibration of echo-sounder system was carried out at field with a steel ball bearing of 38mm in diameter having the target strength of -40.8dB. The dorsal-aspect target strengths on anesthetized specimens of gold crussian used in the cage experiment were measured and compared with the target strength predicted by the fish density-echo energy relationship for aggregations of free-swimming gold crussian in the cage. The results obtained can be summarized as follows: 1. The target strengths in the dorsal aspect on anesthetized specimens of gold crussian, with the mean length of 19.1cm and the mean weight of 210.5g, varied from -40.9dB to -44.8dB with a mean of -42.6dB. This mean target strength did not differ significantly from that predicted by the regression of echo energy on fish density of free-swimming gold crussian in the cage. It suggests that the target-strength measurements on anesthetized fish was valid and can be representative for live, free-swimming fish. 2. The relationship between mean backscattering strength(, dB) and distribution density of gold $crussian(\rho, $ fish/m super(3)) was expressed by the following equation; =-41.9+11 $Log(\rho)$ with a correlation coefficient of 0.97. This result support the existence of a linear relationship between fish density and echo energy, but suggest that this line has steeper slope than the regression by the theory of estimating the density of fish schools.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.3
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• pp.189-198
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• 2000

The stochiometric mixture of evaporating materials for the $CuGaSe_2$single crystal thin films were prepared from horizontal furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal $CuGaSe_2$, it was found tetragonal structure whose lattice constant $a_0}$ and $c_0$ were 5.615 $\AA$ and 11.025 $\AA$, respectively. To obtains the single crystal thin films, $CuGaSe_2$mixed crystal was deposited on throughly etched GaAs(100) by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $610^{\circ}C$ and $450^{\circ}C$ respectively, and the growth rate of the single crystal thin films was about 0.5$\mu\textrm{m}$/h. The crystalline structure of single crystal thin films was investigated by the double crystal X-ray diffraction (DCXD). Hall effect on this sample was measured by the method of van der Pauw and studied on carrier density and mobility depending on temperature. From Hall data, the mobility was likely to be decreased by pizoelectric scattering in the temperature range 30 K to 150 K and by polar optical scattering in the temperature range 150 K to 293 K. The optical energy gaps were found to be 1.68 eV for CuGaSe$_2$sing1e crystal thin films at room temperature. The temperature dependence of the photocurrent peak energy is well explained by the Varshni equation then the constants in the Varshni equation are given by $\alpha$ = $9.615{\times}10^{-4}$eV/K, and $\beta$ = 335 K. From the photocurrent spectra by illumination of polarized light of the $CuGaSe_2$single crystal thin films. We have found that values of spin orbit coupling $\Delta$So and crystal field splitting $\Delta$Cr was 0.0900 eV and 0.2498 eV, respectively. From the PL spectra at 20 K, the peaks corresponding to free bound excitons and D-A pair and a broad emission band due to SA is identified. The binding energy of the free excitons are determined to be 0.0626 eV and the dissipation energy of the acceptor-bound exciton and donor-bound exciton to be 0.0352 eV, 0.0932 eV, respectively.

• Resources Recycling
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• v.17 no.6
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• pp.34-42
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• 2008

The properties of sodium silicate solution were surveyed by using the yellow silicomolybdic method, and the formation of silica sol from sodium silicate solution and the growth of silica sol were investigated in this study. The $SiO_2$ content of 2 wt% in sodium silicate solution was proper to oxidize sodium silicate with sulfuric acid. After the removal of sodium ions in sodium silicate solution, the pH of silicate solution had to be controlled above 9 for the stabilization of silicate solution. The condensation between silicic acid species and silica nuclei surfaces has been studied at $20{\sim}80^{\circ}C$ and pH 10 in silicate solutions with silica nuclei. The reaction falls into two kinetics regimes, limited at high silicic acid species concentration by polymerization, but at lower concentration by a process whereby deposited silicic acid species condenses further to silica. The overall condensation is first-order in silicic acid species concentration, proceeded toward to pseudo equilibrium concentration, $C_x$, rather than the solubility of amorphous silica. The heat of solution of amorphous silica was 3.34 kcal/mol and exhibits an Arrhenius temperature dependence with an apparent activation energy of 3.16 kcal/mol in the range of $20{\sim}80^{\circ}C$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.14 no.6
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• pp.244-252
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• 2004

A stoichiometric mixture of evaporating materials for $CuInSe_2$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $_CuInSe2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $620^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuInSe_2$ single crystal thin films measured with Hall effect by van der Pauw method are $9.62\times10^{16}/\textrm{cm}^3$, 296 $\textrm{cm}^2$/Vㆍs at 293 K, respectively. The temperature dependence of the energy band gap of the $CuInSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g$(T) = 1.1851 eV -($8.99\times10^{-4} eV/K)T^2$(T + 153 K). The crystal field and the spin-orbit splitting energies for the valence band of the CuInSe$_2$ have been estimated to be 0.0087 eV and 0.2329 eV at 10 K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the Δso definitely exists in the $\Gamma$6 states of the valence band of the $CuInSe_2$. The three photocurrent peaks observed at 10 K are ascribed to the $A_1-, B_1$-와 $C_1$-exciton peaks for n = 1.

• Journal of Korean Ophthalmic Optics Society
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• v.7 no.2
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• pp.209-215
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• 2002

This study investigated the crystal growth, crystalline structure and the basic optical properties of $SnSe/BaF_2$ epilayers. The SnSe epilayer was grown on $BaF_2$(111) insulating substrates using a hot wall epitaxy(HWE) technique. It was found from the analysis of X-ray diffraction patterns that $SnSe/BaF_2$ epilayer was growing to single crystal with orthorhombic structure oriented [111] along the growth direction. Using Rutherford back scattering(RBS), the atomic ratios of the SnSe was found to be stoichiometric, almost 50 : 50. The best values for the full width at half maximum (FWHM) of the DCXRD was 163 arcsec for SnSe epilarer. The epilayer-thickness dependence of the FWHM of the DCXRD shows that the quality of the $SnSe/BaF_2$ is as expected. The dielectric function ${\varepsilon}$(E) of a semiconductor is closely related to its electronic energy band structure and such relation can be drawn from features around the critical points in the optical spectra. The real and imaginary parts(${\varepsilon}_1$ and ${\varepsilon}_2$) of the dielectric function ${\varepsilon}$ of SnSe were measured. These data are analyzed using a theoretical model known as the model dielectric function(MDF). The optical constants related to dielectric function such as the complex refractive index(n*-n+ik), absorption coefficient (${\alpha}$) and normal- incidence reflectivity (R) are also presented for $SnSe/BaF_2$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.15 no.1
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• pp.1-9
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• 2005

A stoichiometric mixture of evaporating materials for AgGaS₂ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, AgGaS₂ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were 590℃ and 440℃, respectively. The temperature dependence of the energy band gap of the AgGaS₂ obtained from the absorption spectra was well described by the Varshni's relation, E/sub g/(T) = 2.7284 eV - (8.695×10/sup -4/ eV/K)T²/(T + 332 K). After the as-grown AgGaS₂ single crystal thin films was annealed in Ag-, S-, and Ga-atmospheres, the origin of point defects of AgGaS₂ single crystal thin films has been investigated by the photoluminescence (PL) at 10 K. The native defects of V/sub Ag/, V/sub s/, Ag/sub int/, and S/sub int/ obtained by PL measurements were classified as a donors or accepters type. And we concluded that the heat-treatment in the Ag-atmosphere converted AgGaS₂ single crystal thin films to an optical n-type. Also, we confirmed that Ga in AgGaS₂/GaAs crystal thin films did not form the native defects because Ga in AgGaS₂ single crystal thin films existed in the form of stable bonds.

• Strategy21
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• s.31
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• pp.142-163
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• 2013

Ieodo is a submerged rock within a Korea's Exclusive Economic Zone(EEZ) in the East China Sea with its most shallow part about 4.6m below the sea level which has no specific rights for the EEZ delimitation. The United Nations Convention on the Law of the Sea (UNCLOS) stipulates that any coastal state has the rights to claim an EEZ that stretches up to 200 nautical miles from its shore, except where there is an overlap with a neighboring country's claims. Korea claims that Ieodo is within its EEZ as it sits on the Korean side of the equidistant line and the reef is located on the Korea section of the continental shelf. China does not recognize Korea's application of the equidistance principle and insists that Ieodo lies on its continental shelf. According to UNCLOS, Ieodo is located in international waters, rather than one country's EEZ as the two countries have failed to reach a final agreement over the delimitation of the maritime border. This study seeks to understand the evolution of the People's Liberation Army Navy(PLAN) strategy as main obstacles for the EEZ delimitation between Korea and China. PLAN's Strategy evolves from "coastal defense" to "offshore defence", since the late 1980s from a "coastal defence" strategy to an "offshore defence" strategy which would extend the perimeter of defence to between 200 nm and 400 nm from the coast. China's economic power has increased It's dependence on open trade routes for energy supplies and for its own imports and exports. China want secure Sea Lane. PLAN's "offshore defence" strategy combines the concept of active defence with the deployment of its military forces beyond its borders. China's navy try to forward base its units and to achieve an ocean going capability. China's navy expects to have a 'Blue Water' capability by 2050. China insists that coastal states do have a right under UNCLOS to regulate the activities of foreign military forces in their EEZs. China protests several times against US military forces operating within It's EEZ. The U.S. position is that EEZs should be consistent with customary international law of the sea, as reflected in UNCLOS. U.S. has a national interest in the preservation of freedom of navigation as recognized in customary international law of the sea and reflected in UNCLOS. U.S. insists that coastal states under UNCLOS do not have the right to regulate foreign military activities in their EEZs. To be consistent with its demand that the U.S. cease performing military operations in china's EEZ, China would not be able to undertake any military operations in the waters of South Korea's EEZ. As such, to preserve its own security interests, China prefers a status quo policy and used strategic ambiguity on the Ieodo issue. PLAN's strategy of coastal defence has been transformed into offensive defence, Korea's EEZ can be a serious limitation to PLAN's operational plan of activities. Considering China'a view of EEZs, China do not want make EEZ delimitation agreement between Korea and China. China argues that the overlapping areas between EEZs should be handled through negotiations and neither side can take unilateral actions before an agreement is reached. China would prefer Ieodo sea zone as a international waters, rather than one country's EEZ.

• Journal of the Korean Electrochemical Society
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• v.20 no.2
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• pp.27-33
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• 2017

Conventional lithium ion batteries suffer from notorious safety issues caused by inevitable lithium dendrite formation and proliferation during over/fast charging processes. The lithium dendrites or mechanical damage on the separator induce internal short circuit in LiB that generates extensive amount of heat within contacted electrode surfaces through the separator. During this heat generation, conventional polyolefin separators shrinks dramatically, and increasing short circuit pathway, that causes the battery to explode. To overcome this serious issue, ceramic coated separators are developed in commercial LiB to enhance thermal and mechanical stability. In this paper, various size(IL = 488.5 nm, I = 538.7 nm, S = 810.3 nm, D = 1533.3 nm) of $Al_2O_3$ particles are coated using styrene-butadiene rubber(SBR) / carboxymethyl cellulose(CMC) binder on PE separator to investigate its thermal stability and electrochemical effect on LiB coin cell with NCM cathode and Li metal anode.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.1
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• pp.6-17
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• 1997

Lithium niobate single crystals with various [Li]/[Nb] ratios were grown by the Czochralski method from melts having compositions varing between 48.6 ~ 58.0 mol % $Li_2O$. A vapor transport equilibration technique has been used to improve the homogeneity and adjust the [Li]/[Nb] ratio in small $LiNbO_3$ single crystals grown by the Czochralski method. When equilibrated with a Li-rich powder (65 mol%$Li_2O$), containing a mixture of $LiNbO_3$ and $Li_3NbO_4$, crystals of nearly stoichiometric composition can be obtained. This was established by studying the composition dependence of the following properties; lineshape, intensity and linewidth for the electron paramagnetic resonance (EPR) of $Fe^{3+}$ energy of the fundamental absorption edge and $OH^-$ absorption spectra.

• Korean Journal of Materials Research
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• v.4 no.6
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• pp.638-643
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• 1994

The Si(ll1) surface structures induced by deposition of Au atoms were investigated by RHEED system. When Au atoms were deposited on the Si(ll1) $7\times7$ surfade, the dependence of structures and phases on the substrate temperatures and coverages was drastic. For O.1ML to 0.4ML of coverage the $7\times7$ structure changes to $7\times7$ + $5\times2$ structure as temperature increases to $350^{\circ}C$-$750^{\circ}C$. Between 0.4M1 to 1.OML the phase changed to $5 \times 2,\alpha- \sqrt{3} \times \sqrt{3},\beta- \sqrt{3} \times \sqrt{3}$ structure according to the substrate temperature and coverages. When the coverages exceeds O.SML, the 6 x 6 structure appears at the substrate temperature range between $270^{\circ}C$-$370^{\circ}C$ and compeletely transforms to 6 x6 at 1,OML. The isothermal desorption of Au on Si(ll1) surface investigated by using AES in the $\alpha- \sqrt{3} \times \sqrt{3},5 \times 2$ structures shows that the desorption energys of $\alpha- \sqrt{3} \times \sqrt{3}$ and 5 x 2 were 79Kcal/mol and 82 Kcal/mol respectively.