• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.10
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• pp.829-838
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• 2007

The stochiometric mix of evaporating materials for the $CdGa_2Se_4$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, $CdGa_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $630^{\circ}C$ and $420^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD).The carrier density and mobility of $CdGa_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method are $8.27{\times}10^{17}\;cm^{-3},\;345\;cm^2/V{\cdot}s$ at 293 K. respectively. The temperature dependence of the energy band gap of the $CdGa_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $Eg(T)\;=\;2.6400\;eV\;-\;(7.721{\times}10^{-4}\;eV/K)T^2/(T+399\;K)$. After the as-grown single crystal $CdGa_2Se_4$ thin films were annealed in Cd-, Se-, and Ga -atmospheres, the origin of point defects of single crystal $CdGa_2Se_4$ thin films has been investigated by PL at 10 K. The native defects of $V_{Cd}$, $V_{Se}$, $Cd_{int}$, and $Se_{int}$ obtained by PL measurements were classified as donors or accepters. We concluded that the heat-treatment in the Cd-atmosphere converted single crystal $CdGa_2Se_4$ thin films to an optical p-type. Also, we confirmed that Ga in $CdGa_2Se_4/GaAs$ did not form the native defects because Ga in single crystal $CdGa_2Se_4$ thin films existed in the form of stable bonds.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.399-399
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• 2008

Synthesis and characterization of ZnO structure such as nanowires, nanorods, nanotube, nanowall, etc. have been studied to multifunctional application such as optical, nanoscale electronic and chemical devices because it has a room-temperature wide band gap of 3.37eV, large exiton binding energy(60meV) and various properties. Various synthesis methods including chemical vapor deposition (CVD), physical vapor deposition, electrochemical deposition, micro-emulsion, and hydrothermal approach have been reported to fabricate various kinds of ZnO nanostructures. But some of these synthesis methods are expensive and difficult of mass production. Wet chemical method has several advantage such as simple process, mass production, low temperature process, and low cost. In the present work, ZnO nanorods are deposited on ITO/glass substrate by simple wet chemical method. The process is perfomed by two steps. One-step is deposition of ZnO seeds and two-step is growth of ZnO nanorods on substrates. In order to form ZnO seeds on substrates, mixture solution of Zn acetate and Methanol was prepared.(one-step) Seed layers were deposited for control of morpholgy of ZnO seed layers by spin coating process because ZnO seeds is deposited uniformly by centrifugal force of spin coating. The seed-deposited samples were pre-annealed for 30min at $180^{\circ}C$ to enhance adhesion and crystallinnity of ZnO seed layer on substrate. Vertically well-aligned ZnO nanorods were grown by the "dipping-and-holding" process of the substrates into the mixture solution consisting of the mixture solution of DI water, Zinc nitrate and hexamethylenetetramine for 4 hours at $90^{\circ}C$.(two-step) It was found that density and morphology of ZnO nanorods were controlled by manipulation of ZnO seeds through rpm of spin coating. The morphology, crystallinity, optical properties of the grown ZnO nanostructures were carried out by field-emission scanning electron microscopy, high-resolution electron microscopy, photoluminescence, respectively. We are convinced that this method is complementing problems of main techniques of existing reports.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.363-363
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• 2008

The development of dry etching process for sapphire wafer with plasma has been key issues for the opto-electric devices. The challenges are increasing control and obtaining low plasma induced-damage because an unwanted scattering of radiation is caused by the spatial disorder of pattern and variation of surface roughness. The plasma-induced damages during plasma etching process can be classified as impurity contamination of residual etch products or bonding disruption in lattice due to charged particle bombardment. Therefor, fine pattern technology with low damaged etching process and high etch rate are urgently needed. Until now, there are a lot of reports on the etching of sapphire wafer with using $Cl_2$/Ar, $BCl_3$/Ar, HBr/Ar and so on [1]. However, the etch behavior of sapphire wafer have investigated with variation of only one parameter while other parameters are fixed. In this study, we investigated the effect of pressure and other parameters on the etch rate and the selectivity. We selected $BCl_3$ as an etch ant because $BCl_3$ plasmas are widely used in etching process of oxide materials. In plasma, the $BCl_3$ molecule can be dissociated into B radical, $B^+$ ion, Cl radical and $Cl^+$ ion. However, the $BCl_3$ molecule can be dissociated into B radical or $B^+$ ion easier than Cl radical or $Cl^+$ ion. First, we evaluated the etch behaviors of sapphire wafer in $BCl_3$/additive gases (Ar, $N_2,Cl_2$) gases. The behavior of etch rate of sapphire substrate was monitored as a function of additive gas ratio to $BCl_3$ based plasma, total flow rate, r.f. power, d.c. bias under different pressures of 5 mTorr, 10 mTorr, 20 mTorr and 30 mTorr. The etch rates of sapphire wafer, $SiO_2$ and PR were measured with using alpha step surface profiler. In order to understand the changes of radicals, volume density of Cl, B radical and BCl molecule were investigated with optical emission spectroscopy (OES). The chemical states of $Al_2O_3$ thin films were studied with energy dispersive X-ray (EDX) and depth profile anlysis of auger electron spectroscopy (AES). The enhancement of sapphire substrate can be explained by the reactive ion etching mechanism with the competition of the formation of volatile $AlCl_3$, $Al_2Cl_6$ or $BOCl_3$ and the sputter effect by energetic ions.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.11
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• pp.63-70
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• 1999

A PLT(10) thin film has been deposited on $Pt/TiO_2/SiO_2/Si$ substrate by sol-gel method, and its switching characteristics have been investigated with various top electrode areas, input pulse voltages and loan resistances. As the external input pulse voltage increases from 2V to 5V, the switching time decreases from $0.49{\mu}s$ to $0.12{\mu}s$. The activation energy ($E_a$) obtained from the relations between the switching time and the applied pulse voltage is evaluated as 209kV/cm. The switched charge densities at 5V obtained from the hysteresis loop and the polarization switching are $11.69{\mu}C/cm^2$ and $13.02{\mu}C/cm^2$, respectively, which agree relatively well with each other and show the difference of 10%. When the top electrode area increases from TEX>$3.14{\times}10^{-4}cm^2$ to $5.03{\times}10^{-3}cm^2$ and the load resistance increases from 50${\Omega}$ to 3.3$k{\Omega}$, the switching time increases from $0.12{\mu}s$ to $1.88{\mu}s$ and from $0.12{\mu}s$ to $9.7{\mu}s$, respectively. These switching characteristics indicate that PLT(10) thin film can be well applied in nonvolatile memory devices.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.7
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• pp.741-753
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• 2008

This paper explores the throughput performance of CSMA/CA-based DCF protocol over both ideal channels and fading channels with payload size at the MAC layer in the 802.11a wireless LAN. In the ideal channel, there are no errors and at the transmission cycle there is one and only one active station which always has a packet to send and other stations can only accept packets and provide acknowledgements. In the fading channel, bit errors appear in the channel randomly and the number of stations is assumed to be fixed. And each station always has packets for transmission. In other words, we operate in saturation conditions. Up to now conventional research work about DCF throughput analysis of IEEE 802.11 a wireless LAN has been done over the ideal channel, but this paper is done over the Rayleigh/Ricean fading channel. So, the ratio of received average energy per bit-to-noise power spectral density $E_b/N_o$ is set to 25 dB and the ratio of direct-to-diffuse signal power in each sub-channel $\xi$ is set to 6 for combined Rayleigh/Ricean fading channel. In conclusion, it is shown that the saturation throughput is always less than the maximum throughput at all the payload size and the higher the transmission rate be, the higher the decreasing rate of saturation throughput compared to the maximum throughput be.

• The Bulletin of The Korean Astronomical Society
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• v.42 no.2
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• pp.59.5-60
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• 2017

We present the relationship between vector magnetic field parameters and solar major flare occurrence rate. Based on this, we are developing a forecast model of major flare (M and X-class) occurrence rate within a day using hourly vector magnetic field data of Space-weather HMI Active Region Patch (SHARP) from May 2010 to April 2017. In order to reduce the projection effect, we use SHARP data whose longitudes are within ${\pm}60$ degrees. We consider six SHARP magnetic parameters (the total unsigned current helicity, the total photospheric magnetic free energy density, the total unsigned vertical current, the absolute value of the net current helicity, the sum of the net current emanating from each polarity, and the total unsigned magnetic flux) with high F-scores as useful predictors of flaring activity from Bobra and Couvidat (2015). We have considered two cases. In case 1, we have divided the data into two sets separated in chronological order. 75% of the data before a given day are used for setting up a flare model and 25% of the data after that day are used for test. In case 2, the data are divided into two sets every year in order to reduce the solar cycle (SC) phase effect. All magnetic parameters are divided into 100 groups to estimate the corresponding flare occurrence rates. The flare identification is determined by using LMSAL flare locations, giving more numbers of flares than the NGDC flare list. Major results are as follows. First, major flare occurrence rates are well correlated with six magnetic parameters. Second, the occurrence rate ranges from 0.001 to 1 for M and X-class flares. Third, the logarithmic values of flaring rates are well approximated by two linear equations with different slopes: steeper one at lower values and lower one at higher values. Fourth, the sum of the net current emanating from each polarity gives the minimum RMS error between observed flare rates and predicted ones. Fifth, the RMS error for case 2, which is taken to reduce SC phase effect, are smaller than those for case 1.

• Progress in Medical Physics
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• v.20 no.3
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• pp.145-151
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• 2009

This study aims to evaluate CT (Computed Tomography) characteristics through the estimation of HU (Hounsfield Unit) and the corresponding variations using coefficient of variation values for various materials as a function of physical factor. HU values for various materials with varying densities as a function of physical factor were measured using MDCT (Siemens SOMATOM Sensation 4, Germany). The results showed that the HU values were decreased and increased as a function of kVp and material density, respectively. Especially, the HU values for bone and iodine at 140 kVp were 32% and 42% smaller than those at 80 kVp, respectively. In case of iodine, the HU values also decreased and increased as a function of kVp and concentration, respectively. While the HU values were fixed as a function of mAs. The decreased ratio of HU values between 80 keV and 140 keV was different at various concentration and maximum difference was shown as 1.73 at 3% concentration. These results indicated that it may be possible to separate composition of materials, e.g. iodine and bone, using single source CT. The results showed that dual energy techniques using single source CT can be applied to material separation and expand CT imaging techniques to other practical applications.

• Journal of Bio-Environment Control
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• v.19 no.4
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• pp.333-342
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• 2010

For the energy-saving production of fresh vegetables in poor environment such as the Antarctic, a container-type plant factory was designed and developed. To maximize space usage of the 20 feet container ($L5.9m{\times}W2.4m{\times}H2.4m$), a three-level hydroponic cultivation system was installed and the nutrient solution was supplied by bottom watering. Using this system, 3 lettuce cultivars were grown under different the light source (light intensity). After 2 weeks from the transplanting, fluorescent lamp ($145\;{\mu}mol{\cdot}m^{-2}{\cdot}s^{-1}$) showed the best fresh weight of top part and leaf area. However, After 4 weeks, fluorescent lamp plus metal halide lamp ($150\;{\mu}mol{\cdot}m^{-2}{\cdot}s^{-1}$) led to the optimum growth of the each lettuce cultivar. The cultivar, 'Cheongchima', showed the best fresh weight of top part and leaf area, followed by 'Jeokchukmyeon' and 'Lollo rosa'. The chlorophyll concentrations (SPAD) showed no significant difference among the sources of lights. However, 'Cheongchima' showed relatively high chlorophyll concentration. With the above results, we found that the growth of lettuce is depend on light intensity and even at same intensity, the growth is different among the cultivars. Therefore, the selection of optimum cultivar should be considered in the plant factory system that has only weak light density.

• Applied Chemistry for Engineering
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• v.29 no.1
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• pp.103-111
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• 2018

A plasma-catalytic combined process was used as an attempt to improve the conversion efficiency of nitrogen oxides ($NO_x$) over a wide temperature range ($150{\sim}500^{\circ}C$) to cope with the exhaust gas whose temperature varies greatly. Since the catalytic $NO_x$ reduction is effective at high temperatures where the activity of the catalyst itself is high, the $NO_x$ reduction was carried out without plasma generation in the high temperature region. On the other hand, in the low temperature region, the plasma was created in the catalyst bed to make up for the decreased catalytic activity, thereby increasing the $NO_x$ conversion efficiency. Effects of the types of catalysts, the reaction temperature, the concentration of the reducing agent (n-heptane), and the energy density on $NO_x$ conversion efficiency were examined. As a result of comparative analysis of various catalysts, the catalytic $NO_x$ conversion efficiency in the high temperature region was the highest in the case of the $Ag-Zn/{\gamma}-Al_2O_3$ catalyst of more than 90%. In the low temperature region, $NO_x$ was hardly removed by the hydrocarbon selective reduction process, but when the plasma was generated in the catalyst bed, the $NO_x$ conversion sharply increased to about 90%. The $NO_x$ conversion can be maintained high at temperatures of $150{\sim}500^{\circ}C$ by the combination of plasma in accordance with the temperature change of the exhaust gas.

• Applied Chemistry for Engineering
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• v.29 no.5
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• pp.594-603
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• 2018

The effects of operating conditions such as benzene concentration, nitrogen flow rate, steam flow rate, and bed temperature on TSA process were experimentally investigated as a potential VOC removal technology using two kinds of beds packed with activated carbon and zeolite 13X. The TSA cycle studied was composed of the adsorption step, steam desorption step, and drying and cooling step. At 2% benzene concentration, the total adsorption amounts of zeolite 13X and activated carbon were 4.44 g and 3.65 g, respectively. Since the zeolite 13X has a larger packing density than that of the activated carbon, the larger benzene amount could be adsorbed in a single cycle. Increasing the water vapor flow rate to 75 g/hr at 2% benzene concentration reduced the desorption time from 1 hr to a maximum of 33 min. If the desorption time is shortened, the drying and cooling step period can be relatively increased. Accordingly, the steam removal and bed cooling could be sufficiently performed. The desorption amounts increased with the increase of the bed temperature. However, the energy consumption increased while the desorption amount was almost constant above $150^{\circ}C$. In the continuous cycle process, when the amount of remained benzene at the completion of the regeneration step increased, it might cause a decrease in the working capacity of the adsorbent. The continuous cycle process experiment for zeolite 13X showed that the amount of remained benzene at the end of regeneration step maintained a constant value after the fourth cycle.