• 세라미스트
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• 제22권4호
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• pp.350-356
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• 2019

Recently, transition metal dichalcogenide (TMDC) monolayers have been the subject of research exploring the physical phenomenon generated by low dimensionality and high symmetry. One of the keys to understanding new physical observations is the electronic band structure of 2D TMDCs. Angle-resolved photoelectron spectroscopy (ARPES) is, to this point, the best technique for obtaining information on the electronic structure of 2D TMDCs. However, through ARPES research, obtaining the long-range well-ordered single crystal samples always proves a challenging and obstacle presenting issue, which has been limiting towards measuring the electronic band structures of samples. This is particularly true in general 2D TMDCs cases. Here, we introduce the approach, with a mathematical framework, to overcome such ARPES limitations by employing the high level of symmetry of 2D TMDCs. Their high symmetry enables measurement of the clear and sharp electronic band dispersion, which is dominated by the band dispersion of single-crystal TMDCs along the two high symmetry directions Γ-K and Γ-M. In addition, we present two important studies and observations for the direct measuring of the exciton binding energy and charge transfer of 2D TMDCs, both being established by the above novel approach.

• 한국수소및신에너지학회논문집
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• 제22권5호
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• pp.656-662
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• 2011

The purpose of this study was to correlate between photoelectrochemcial hydrogen production rate and electron transfer with various types of metal doped $TiO_2$ nanotubes as photoanodes. In order to fabricate light sensitized photoanode, CdS, $WO_3$, and Pt were doped by electrodeposition method. As the results of experiments, the electron transfer was favorable from higher position to lower position of conduction band (CB). In consequence, the higher hydrogen production rate was as follows, CdS/$TiO_2$ (100 $umol/hr-cm^2$) > $WO_3/TiO_2$ (20 $umol/hr-cm^2$) > Pt/$TiO_2$ (10 $umol/hr-cm^2$). The surface characterizations exhibited that crystal structure, morphological and electrical properties of various metal depoed $TiO_2$ nanotubes by the results of SEM, TEM, XPS, and photocurrent measurements.

• 한국통신학회논문지
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• 제21권7호
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• pp.1613-1623
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• 1996

In this paper, an image coding scheme using removal of isolated coefficients and quadtree structure in wavelet transformed domain, is suggested. The number of significant coefficients can be reduced by quantizing in different stages according to the weights of the each band. The quadtree structure preseves the location information while significantly reducing the number of bits required to represent the locality of an image. To increase the efficienty of the wavelet transformed images using quadtree, the energy of the isolated coefficients is analyzed and those with low energy are eliminated. Furthermore, to control the bit rate the entropy of each block is sorted according to its energy concentration and the number of bits required for encoding, and the blocks with low energy are removed to achieve the desired compression rate.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.267-267
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• 2013

Band engineering of a nanowire is related to the question what is the minimum size of a nanowire-based device. At the subnanometer scale, there has been a long standing problem whether it is possible to both control an energy band of an isolated nanowire by a dopant and measure it using angle-resolved photoemission spectroscopy (ARPES). This is because an extra atom in the subnanometer wire plays as a defect rather than a dopant and it is challenging to assemble isolated subnanometer wires into an array for an ARPES measurement. We demonstrate that only one of multiple metallic subnanometer wires canbe controlled electronically by a dopant maintaining the whole metallic bands of other wires, which was observed directly by ARPES. Here,the multiple metallic subnanometer wires were produced on a stepped Si(111) surface by a self-assembly method. The selective band engineering proves that the selectively-controlled metallic wire is nearly isolated electronically from other metallic wires and an electronic structure controlcan be realized down to subnanometer scale.

• 한국전기전자재료학회논문지
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• 제28권3호
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• pp.185-190
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• 2015

In this study, we fabricated the indium gallium zinc oxide (IGZO), zinc oxide (ZnO), aluminum zinc oxide (AZO). oxide and silver are deposited by magnetron sputtering and thermal evaporator, respectively transparency and energy bandgap were changed by the thickness of silver layer. To fabricate metal oxide metal (OMO) structure, IGZO sputtered on a corning 1,737 glass substrate was used as bottom oxide material and then silver was evaporated on the IGZO layer, finally IGZO was sputtered on the silver layer we get the final OMO structure. The radio-frequency power of the target was fixed at 30 W. The chamber pressure was set to $6.0{\times}10^{-3}$ Torr, and the gas ratio of Ar was fixed at 25 sccm. The silver thickness are varied from 3 to 15 nm. The OMO thin films was analyzed using XRD. XRD shows broad peak which clearly indicates amorphous phase. ZnO, AZO, OMO show the peak [002] direction at $34^{\circ}$. This indicate that ZnO, AZO OMO structure show the crystalline peak. Average transmittance of visible region was over 75%, while that of infrared region was under 20%. Energy band gap of OMO layer was increased with increasing thickness of Ag layer. As a result total transmittance was decreased.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.144-145
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• 2009

Single crystal $CdGa_2Se_4$ layers were grown on a thoroughly etched semi-insulating GaAs(100) substrate at $420^{\circ}C$ with the hot wall epitaxy (HWE) system by evaporating the poly crystal source of $CdGa_2Se_4$ at $630\;^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $CdGa_2Se_4$ thin films measured with Hall effect by van der Pauw method are $8.27\;\times\;10^{17}\;cm^{-3}$, $345\;cm^2/V{\cdot}s$ at 293 K, respectively. The photocurrent and the absorption spectra of $CdGa_2Se_4$/SI(Semi-Insulated) GaAs(100) are measured ranging from 293 K to 10K. The temperature dependence of the energy band gap of the $CdGa_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g$(T) = 2.6400 eV - ($7.721\;{\times}\;10^{-4}\;eV/K)T^2$/(T + 399 K). Using the photocurrent spectra and the Hopfield quasi cubic model, the crystal field energy(${\Delta}cr$) and the spin-orbit splitting energy(${\Delta}so$) for the valence band of the $CdGa_2Se_4$ have been estimated to be 106.5 meV and 418.9 meV at 10 K, respectively. The three photocurrent peaks observed at 10 K are ascribed to the $A_1$-, $B_1$-, and $C_{11}$-exciton peaks.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.97-98
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• 2007

A stoichiometric. mixture of evaporating materials for $CuGaSe_2$ single crystal thin films was prepared from horizontal electric furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal $CuGaSe_2$, it was found tetragonal structure whose lattice constant $a_0$ and $c_0$ were $5.615\;{\AA}$ and $11.025\;{\AA}$, respectively. To obtain the single crystal thin films, $CuGaSe_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $610^{\circ}C$ and $450^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuGaSe_2$ single crystal thin films measured with Hall effect by van der Pauw method are $4.87{\times}10^{17}\;cm^{-3}$ and $129\;cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuGaSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;1.7998\;eV\;-\;(8.7489\;{\times}\;10^{-4}\;eV/K)T^2/(T\;+\;335\;K)$.

• 공업화학
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• 제3권2호
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• pp.240-246
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• 1992

X선 광전자분광법을 이용하여 교환된 제올라이트내 산소원자의 전자구조를 조사하였다. $Na^+$, $Fe^{2+}$ 및 $Fe^{3+}$로 교환된 X형 및 Y형 제올라이트에 대하여 얻어진 $O_{1S}$스펙트럼은 골격산소의 결합에너지를 밝히기 위하여 분해하였다. 각 스펙트럼에서는 2-3개의 분해띠들이 있었다. 분해된 각 띠들의 특성은 교환된 양이온에 따라서 $O_{1S}$ 전자의 결합에너지와 띠면적의 관점에서 고찰되었다. 분해된 띠들을 각각 골격내 가교산소에 의한 것(띠 1), 양이온에 결합된 산소에 의한 것(띠 2), 양이온에 배위된 물분자내 산소에 의한 것(띠 3)으로 해석되었다. $O_{1S}$스펙트럼 면적의 대부분을 차지하고 있는 띠 1은 제올라이트내 Al함량의 감소에 따라서 결합에너지상의 증가를 나타내었다.

• KCI Concrete Journal
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• 제12권1호
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• pp.57-68
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• 2000

The effect of structure size on the nominal strength of unidirectional fiber-polymer composites, failing by propagation of a kink band with fiber microbuckling, is analyzed experimentally and theoretically. Tests of novel geometrically similar carbon-PEEK specimens, with notches slanted so as to lead to a pure kink band (without shear or splitting cracks), are conducted. The specimens are rectangular strips of widths 15.875, 31.75. and 63.5 mm (0.625, 1.25 and 2.5 in and gage lengths 39.7, 79.375 and 158.75 mm (1.563, 3.125 and 6.25 in.). They reveal the existence of a strong (deterministic. non-statistical) size effect. The doubly logarithmic plot of the nominal strength (load divided by size and thickness) versus the characteristic size agrees with the approximate size effect law proposed for quasibrittle failures in 1983 by Bazant This law represents a gradual transition from a horizontal asymptote, representing the case of no size effect (characteristic of plasticity or strength criteria), to an asymptote of slope -1/2 (characteristic of linear elastic fracture mechanics. LEFM) . The size effect law for notched specimens permits easy identification of the fracture energy of the kink bandand the length of the fracture process zone at the front of the band solely from the measurements of maximum loads. Optimum fits of the test results by the size effect law are obtained, and the size effect law parameters are then used to identify the material fracture characteristics, Particularly the fracture energy and the effective length of the fracture process zone. The results suggest that composite size effect must be considered in strengthening existing concrete structural members such as bridge columns and beams using a composite retrofitting technique.

• 한국전기전자재료학회논문지
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• 제17권7호
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• pp.691-696
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• 2004

The electronic state and chemical bonding of $\beta$-MnO$_2$ with transition metal dopants were theoretically investigated by DV-X$_{\alpha}$ (the discrete variational X$_{\alpha}$) method, which is a sort of the first principles molecular orbital method using the Hartree-Fock-Slater approximation. The calculations were performed with a $_Mn_{14}$ MO$_{56}$ )$^{-52}$ (M = transition metals) cluster model. The electron energy level, the density of states (DOS), the overlap population, the charge density distribution, and the net charges, were calculated. The energy level diagram of MnO$_2$ shows the different band structure and electron occupancy between the up spin states and down spin states. The dopant levels decrease between the conduction band and the valence band with the increase of the atomic number of dopants. The covalency of chemical bonding was shown to increase and ionicity decreased in increasing the atomic number of dopants. Calculated results were discussed on the basis of the interaction between transition metal 3d and oxygen 2p orbital. In conclusion it is expected that when the transition metals are added to MnO$_2$ the band gap decreases and the electronic conductivity increases with the increase of the atomic number of dopants. the atomic number of dopants.