• Title/Summary/Keyword: Energy band structure

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Synthesis of Graphene on Hexagonal Boron Nitride by Low Pressure Chemical Vapor

  • Han, Jae-Hyun;Yeo, Jong-Souk
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.391-392
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    • 2012
  • Graphene is a perfectly two-dimensional (2D) atomic crystal which consists of sp2 bonded carbon atoms like a honeycomb lattice. With its unique structure, graphene provides outstanding electrical, mechanical, and optical properties, thus enabling wide variety of applications including a strong potential to extend the technology beyond the conventional Si based electronic materials. Currently, the widespread application for electrostatically switchable devices is limited by its characteristic of zero-energy gap and complex process in its synthesis. Several groups have investigated nanoribbon, strained, or nanomeshed graphenes to induce a band gap. Among various techniques to synthesize graphene, chemical vapor deposition (CVD) is suited to make relatively large scale growth of graphene layers. Direct growth of graphene on hexagonal boron nitride (h-BN) using CVD has gained much attention as the atomically smooth surface, relatively small lattice mismatch (~1.7%) of h-BN provides good quality graphene with high mobility. In addition, induced band gap of graphene on h-BN has been demonstrated to a meaningful value about ~0.5 eV.[1] In this paper, we report the synthesis of grpahene / h-BN bilayer in a chemical vapor deposition (CVD) process by controlling the gas flux ratio and deposition rate with temperature. The h-BN (99.99%) substrate, pure Ar as carrier gas, and $CH_4$ are used to grow graphene. The number of graphene layer grown on the h-BN tends to be proportional to growth time and $CH_4$ gas flow rate. Epitaxially grown graphene on h-BN are characterized by scanning electron microscopy, atomic force microscopy, and Raman spectroscopy.

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Properties of MgMoO4:Eu3+ Phosphor Thin Films Grown by Radio-frequency Magnetron Sputtering Subjected to Thermal Annealing Temperature (열처리 온도 변화에 따른 라디오파 마그네트론 스퍼터링으로 성장된 MgMoO4:Eu3+ 형광체 박막의 특성)

  • Cho, Shinho
    • Current Photovoltaic Research
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    • v.4 no.1
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    • pp.25-29
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    • 2016
  • $Eu^{3+}$-activated $MgMoO_4$ phosphor thin films were grown at $400^{\circ}C$ on quartz substrates by radio-frequency magnetron sputter deposition from a 15 mol% Eu-doped $MgMoO_4$ target. After the deposition, the phosphor thin films were annealed at several temperatures for 30 min in air. The influence of thermal annealing temperature on the structural and optical properties of $MgMoO_4:Eu^{3+}$ phosphor thin films was investigated by using X-ray diffraction (XRD), photoluminescence (PL), and ultraviolet-visible spectrophotometry. The transmittance, optical band gap, and intensities of the luminescence and excitation spectra of the thin films were found to depend on the thermal annealing temperature. The XRD patterns indicated that all the thin films had a monoclinic structure with a main (220) diffraction peak. The highest average transmittance of 91.3% in the wavelength range of 320~1100 nm was obtained for the phosphor thin film annealed at $800^{\circ}C$. At this annealing temperature the optical band gap energy was estimated as 4.83 eV. The emission and excitation spectra exhibited that the $MgMoO_4:Eu^{3+}$ phosphor thin films could be effectively excited by near ultraviolet (281 nm) light, and emitted the dominant 614 nm red light. The results show that increasing RTA temperature can enhance $Eu^{3+}$ emission and excitation intensity.

Investigation of Feasibility of Tunneling Field Effect Transistor (TFET) as Highly Sensitive and Multi-sensing Biosensors

  • Lee, Ryoongbin;Kwon, Dae Woong;Kim, Sihyun;Kim, Dae Hwan;Park, Byung-Gook
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.17 no.1
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    • pp.141-146
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    • 2017
  • In this letter, we propose the use of tunneling field effect transistors (TFET) as a biosensor that detects bio-molecules on the gate oxide. In TFET sensors, the charges of target molecules accumulated at the surface of the gate oxide bend the energy band of p-i-n structure and thus tunneling current varies with the band bending. Sensing parameters of TFET sensors such as threshold voltage ($V_t$) shift and on-current ($I_D$) change are extracted as a function of the charge variation. As a result, it is found that the performances of TFET sensors can surpass those of conventional FET (cFET) based sensors in terms of sensitivity. Furthermore, it is verified that the simultaneous sensing of two different target molecules in a TFET sensor can be performed by using the ambipolar behavior of TFET sensors. Consequently, it is revealed that two different molecules can be sensed simultaneously in a read-out circuit since the multi-sensing is carried out at equivalent current level by the ambipolar behavior.

INTENSITY AND DOPPLER VELOCITY OSCILLATIONS IN PORE ATMOSPHERE

  • Cho, Kyung-Suk;Bong, Su-Chan;Nakariakov, Valery;Lim, Eun-Kyung;Park, Young-Deuk;Chae, Jongchul;Yang, Heesu;Park, Hyung-Min;Yurchyshyn, Vasyl
    • The Bulletin of The Korean Astronomical Society
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    • v.39 no.2
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    • pp.98-98
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    • 2014
  • Due to the simple vertical structure of magnetic field, pores can be exploited to study the transport of mechanical energy by waves along the magnetic field to the chromosphere and corona. For a better understanding of physics of pores, we have investigated chromospheric traveling features running across two merged pores from their centers at the speed about 55 km s-1, in the active region AR 11828. The pores were observed on 2013 August 24 by using high time, spatial, and spectral resolution data from the Fast Imaging Solar Spectrograph (FISS) of the 1.6 meter New Solar Telescope (NST). We infer a LOS velocity by applying the bisector method to the Ca II $8542{\AA}$ band and $H{\alpha}$ band, and investigate intensity and the line-of-sight velocity changes at different wavelengths and different positions at the pores. We find that they have 3 minutes oscillations, and the intensity oscillation from the line center is preceded by that from the core ($-0.3{\AA}$) of the bands. There is no phase difference between the intensity and the LOS velocity oscillations at a given wavelength. The amplitude of LOS velocity from near the core spectra is greater than that from the far core spectra. These results support the interpretation of the observed wave as a slow magnetoacoustic wave propagating along the magnetic field lines in the pores. The apparent horizontal motion and a sudden decrease of its speed beyond the pores can be explained by the projection effect caused by inclination of the magnetic field with a canopy.

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Synthesis and Characterization of Large-Area and Highly Crystalline Molybdenum Disulphide Atomic Layer by Chemical Vapor Deposition

  • Park, Seung-Ho;Kim, Yooseok;Kim, Ji Sun;Lee, Su-Il;Cha, Myoung-Jun;Park, Chong-Yun
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.356.1-356.1
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    • 2014
  • The Isolation of few-layered transition metal dichalcogenides has mainly been performed by mechanical and chemical exfoliation with very low yields. in particular, the two-dimensional layer of molybdenum disulfide (MoS2) has recently attracted much interest due to its direct-gap property and potential application in optoelectronics and energy harvesting. However, the synthetic approach to obtain high-quality and large-area MoS2 atomic thin layers is still rare. In this account, a controlled thermal reduction-sulfurization method is used to synthesize large-MoOx thin films are first deposited on Si/SiO2 substrates, which are then sulfurized (under vacuum) at high temperatures. Samples with different thicknesses have been analyzed by Raman spectroscopy and TEM, and their photoluminescence properties have been evaluated. We demonstrated the presence of mono-, bi-, and few-layered MoS2 on as-grown samples. It is well known that the electronic structure of these materials is very sensitive to the number of layer, ranging from indirect band gap semiconductor in the bulk phase to direct band gap semiconductor in monolayers. This synthetic approach is simple, scalable, and applicable to other transition metal dichalcogenides. Meanwhile, the obtained MoS2 films are transferable to arbitrary substrates, providing great opportunities to make layered composites by stacking various atomically thin layers.

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Operation and Application Guidance for the Ground Based Dual-band Radiometer (지상 기반 듀얼 밴드 라디오미터의 운영 및 활용 가이던스)

  • Jeon, Eun-Hee;Kim, Yeon-Hee;Kim, Ki-Hoon;Lee, Hee-Sang
    • Atmosphere
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    • v.18 no.4
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    • pp.441-458
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    • 2008
  • A TP/WVP-3000A, ground-based microwave radiometer, that was first introduced to South Korea has been operated since August 22, 2007 at the National Center for Intensive Observation of Severe Weathers (NCIO). Using the dual-band, the radiometer provides temperature and humidity soundings from the surface up to 10 km height with the high-temporal resolution of a few minutes. In this study, the performance of the radiometer on the predictability of the high impact weathers was evaluated and various practical applications were investigated. To verify the retrieved profile data from the radiometer, temperature and relative humidity soundings are compared with those from the rawinsonde launched at the NCIO and Gwangju station. The root mean squared errors for temperature and relative humidity soundings were smaller under rainy weather conditions. The correlation coefficient between PWVs (Precipitable Water Vapors) obtained from the radiometer and Global Positioning System satellite at Mokpo station is 0.92 on average. In order to investigate the structure and characteristics of precipitation, stability indexes related to rainfall such as the Convective Available Potential Energy (CAPE), K-index, and Storm RElative Helicity (SREH) were calculated using windprofiler at the NCIO from 14 to 16 September, 2007. CAPE and K-index tended to be large when the thermodynamic unstability was strong. On the other hand, SREH index was dominantly large when the dynamic unstability was strong due to the passage of the typhoon 'Nari'.

Synthesis and Photoluminescence Properties of CaWO4:Eu3+ Phosphors (CaWO4:Eu3+ 형광체의 합성과 발광 특성)

  • Cho, Shin-Ho;Cho, Seon-Woog
    • Korean Journal of Materials Research
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    • v.22 no.5
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    • pp.215-219
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    • 2012
  • Red phosphors $Ca_{1-1.5x}WO_4:{Eu_x}^{3+}$ were synthesized with different concentrations of $Eu^{3+}$ ions by using a solid-state reaction method. The crystal structure of the red phosphors was found to be a tetragonal system. X-ray diffraction (XRD) results showed the (112) main diffraction peak centered at $2{\theta}=28.71^{\circ}$, and the size of crystalline particles exhibited an overall decreasing tendency according to the concentration of $Eu^{3+}$ ions. The excitation spectra of all the phosphors were composed of a broad band centered at 275 nm in the range of 230-310 nm due to $O^{2-}{\rightarrow}W^{6+}$ and a narrow band having a peak at 307 nm caused by $O^{2-}{\rightarrow}Eu^{3+}$. Also, the excitation spectrum presents several strong lines in the range of 305-420 nm, which are assigned to the 4f-4f transitions of the $Eu^{3+}$ ion. In the case of the emission spectrum, all the phosphor powders, irrespective of $Eu^{3+}$ ion concentration, indicated an orange emission peak at 594 nm and a strong red emission spectrum centered at 615 nm, with two weak lines at 648 and 700 nm. The highest red emission intensity occurred at x = 0.10 mol of Eu3+ ion concentration with an asymmetry ratio of 12.5. Especially, the presence of $Eu^{3+}$ in the $Ca_{1-1.5x}WO_4:{Eu_x}^{3+}$ shows very effective use of excitation energy in the range of 305-420 nm, and finally yields a strong emission of red light.

Case Study of Dynamic Amplification Characteristics of the Seismic Stations Using Observed Seismic Waves (관측지진파를 이용한 지반증폭특성 사례분석)

  • Lee, Jundae;Kim, Junkyoung
    • Journal of the Korean GEO-environmental Society
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    • v.10 no.1
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    • pp.35-41
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    • 2009
  • It is necessary to consider the site amplification for estimating SSI (soil structure interaction) and seismic source with more confidence. The horizontal to vertical (H/V) ratio technique in spectral domain is one of several techniques to estimate empirical site transfer function. The technique, originally proposed by Nakamura (1989), is applied to analyze the surface waves in the microtremor records. However, the application of this technique has been widened to the shear wave energy of strong motions for estimating site amplification. The purpose of this paper is to estimate spectral ratio using observed data at the seismic stations distributed within Southern Korean Peninsula from the Fukuoka earthquake including 11 aftershocks. The results show that each station has the its own characteristics of the specific resonance, high-band, and low-band frequency. The characteristics of the resonance frequency is more important because the quality of the seismic records are dependent on the resonance frequency. The result can be used for the study of site classification and removal of the site amplification effects from observed records can give us more reliable seismic source parameters.

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Energy Band Structure and Photocatalytic Property of Fe-doped Zn2TiO4 Material

  • Jang, Jum-Suk;Borse, Pramod H.;Lee, Jae-Sung;Lim, Kwon-Taek;Jung, Ok-Sang;Jeong, Euh-Duck;Bae, Jong-Seong;Won, Mi-Sook;Kim, Hyun-Gyu
    • Bulletin of the Korean Chemical Society
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    • v.30 no.12
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    • pp.3021-3024
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    • 2009
  • $Zn_2Ti_{1-x}Fe_xO_4\;(0\;{\leq}\;x\;{\leq}\;0.7)$ photocatalysts were synthesized by polymerized complex (PC) method and investigated for its physico-chemical as well as optical properties. $Zn_2Ti_{1-x}Fe_xO_4$ can absorb not only UV light but also visible light region due to doping of Fe in the Ti site of $Zn_2TiO_4$ lattice because of the band transition from Fe 3d to the Fe 3d + Ti3d hybrid orbital. The photocatalytic activity of Fe doped $Zn_2TiO_4$ samples for hydrogen production under UV light irradiation decreased with an increase in Fe concentration in $Zn_2TiO_4$. Consequently, there exists an optimized concentration of iron for improved photocatalytic activity under visible light (${\lambda}{\leq}$420 nm)

Structural, Optical and Electrical Properties of ZnO Thin Films with Zn Concentration (Zn 농도변화에 따른 ZnO 박막의 구조, 광학 및 전기적 특성 연구)

  • 한호철;김익주;태원필;김진규;심문식;서수정;김용성
    • Journal of the Korean Ceramic Society
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    • v.40 no.11
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    • pp.1113-1119
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    • 2003
  • We used isopropanol which has low boiling point to prepare thin films at low temperature and changed mole concentration of zinc acetate from 0.3 to 1.3 mol/l. The structural, optical and electrical properties of ZnO thin films with Zn content were investigated. ZnO thin films highly oriented along the c-axis were obtained at Zn concentration of 0.7 mol/l. ZnO thin films with Zn concentration of 0.7 mol/l showed a homogeneous surface layer of nano structure. The transmittance of ZnO thin films by UV-vis. measurement was about 87% under the Zn concentration of 0.7 mol/l, but rapidly decreased over the 1.0 mol/l. The optical band gap energy was obtained from 3.07 to 3.22 eV which is very close to the band gap of bulk ZnO (3.2 eV). The electrical resistivity of ZnO thin films was about 150 $\Omega$-cm that shows little difference with Zn concentration. I-V curves of ZnO thin films exhibited typical ohmic contact properties.