• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.15 no.7
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• pp.677-684
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• 2004

This paper presents direct T $M_{01}$-T $E_{11}$ small mode converter using circular waveguide with tilted structure for X-band high power system. It is designed to transmit microwave energy from Relativistic Backward-Wave Oscillator(RBWO) source to hem antenna effectively, with optimized geometry a parameter study The simulated and measured results of return loss, fractional power of each mode, impedance bandwidth and mode pattern are provided.d.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.85-86
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• 2006

Single crystal $AgGaSe_2$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at $420^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $AgGaSe_2$ source at $630^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The temperature dependence of the energy band gap of the $AgGaSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=19501 eV-(879{\times}10^{-4} eV/K)T^2/(T+250 K)$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.307-308
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• 2008

Zinc oxide is a direct band gap wurtzite-type semiconductor with band gap energy of 3.37eV at room temperature. the n-type doped ZnO oxides, B doped ZnO (BZO) is widely studied in TCOs materials as it shows good electrical, optical, and luminescent properties. we focused on the fabrication of B doped ZnO films with glass substrate using the LSMCD at low temperature. And Novel boron-doped ZnO thin films were deposited and characterized from the structural, optical, electrical point of view. The structure, morphology, and optical properties of the films were studied as a function of by employing the XRD, SEM, Hall system and micro Raman system.

• Transactions on Electrical and Electronic Materials
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• v.3 no.1
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• pp.23-29
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• 2002

The electronic properties of Carbon Nanotube(CNT) are currently the focus of considerable interest. In this paper, the electronic properties of finite length effect in CNT for the carbon nano-scale device is presented. To Calculate the electronic properties of CNT, Empirical potential method (the extended Brenner potential for C-Si-H) for carbon and Tight Binding molecular dynamic (TBMD) simulation are used. As a result of study, we have known that the value of the band gap decreases with increasing the length of the tube. The energy band gap of (6,6) armchair CNT have the ranges between 0.3 eV and 2.5 eV. Also, our results are in agreements with the result of the other computational techniques.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.218.2-218.2
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• 2013

In this study, CdS thin films were deposited onto glass substrates by radio frequency magnetron sputtering. The films were grown at various substrate temperatures in the range of 100 to $250^{\circ}C$. The effects of substrate temperatures on the structural and optical properties were examined. The XRD analysis revealed that CdS films were polycrystalline and retained the mixed structure of hexagonal wurtzite and cubic phase. The percentages of hexagonal structured crystallites in the films were seen to be increased by increasing substrate temperatures. The film grown at $250^{\circ}C$ showed a relatively high transmittance of 80% in the visible region, with an energy band gap of 2.45 eV. The transmittance date analysis indicated that the optical band gap was closely related to the substrate temperatures.

• Transactions of the Korean Society for Noise and Vibration Engineering
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• v.15 no.2 s.95
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• pp.161-168
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• 2005

The absorbing material is mostly used to changing the acoustic energy to the heat energy in the passive control, and that consists of the porous media. That controls an air borne noise while the stiffened plates, damping material and additional mass control a structure borne noise. The additional mass can decrease the sound by mass effect and shift of natural frequency, and damping material can decrease the sound by damping effect. The passive acoustic control using these kinds of control materials has an advantage that is possible to control the acoustic in the wide frequency band and the whole space at a price as compared with the active control using the various electronic circuit and actuator. But the space efficiency decreased and the control ability isn't up to the active control. So it is necessary to maximize the control ability in the specific frequency to raise the capacity of passive control minimizing the diminution of space efficiency such an active control. Therefore, the characteristics of control materials and the optimum layout of control materials that attached to the boundary of structure-acoustic coupled cavity were studied using sequential optimization on this study.

• Journal of Powder Materials
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• v.22 no.6
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• pp.391-395
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• 2015

We report on the successful fabrication of ZnO nanorod (NR)/polystyrene (PS) nanosphere hybrid nanostructure by combining drop coating and hydrothermal methods. Especially, by adopting an atomic layer deposition method for seed layer formation, very uniform ZnO NR structure is grown on the complicated PS surfaces. By using zinc nitrate hexahydrate $[Zn(NO_3)_2{\cdot}6H_2O]$ and hexamine $[(CH_2)_6N_4]$ as sources for Zn and O in hydrothermal process, hexagonal shaped single crystal ZnO NRs are synthesized without dissolution of PS in hydrothermal solution. X-ray diffraction results show that the ZnO NRs are grown along c-axis with single crystalline structure and there is no trace of impurities or unintentionally formed intermetallic compounds. Photoluminescence spectrum measured at room temperature for the ZnO NRs on flat Si and PS show typical two emission bands, which are corresponding to the band-edge and deep level emissions in ZnO crystal. Based on these structural and optical investigations, we confirm that the ZnO NRs can be grown well even on the complicated PS surface morphology to form the chestnut-shaped hybrid nanostructures for the energy generation and storage applications.

• Bulletin of the Korean Chemical Society
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• v.25 no.3
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• pp.373-376
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• 2004

A novel Er(III) complex with oxydiacetate and 1,10-phenanthroline was synthesized and its structure and luminescence properties were characterized. The complex of $[Er(ODA){\cdot}(phen){\cdot}4H_2O]^+$ crystallizes in the monoclinic space group $P2_1$/n with a = 12.216(4) ${\AA}$, b = 16.680(2) ${\AA}$, c = 12.627(3) ${\AA}$, ${\beta}=108.30(2)^{\circ}$, V = 2442.7(11) ${\AA}^3$, Z = 4 and ${\rho}=1.841 g/cm^3$. When the complex is excited at the He-Cd 325-nm line, it produces two broad bands spanning the regions 350-650 nm and 1200-1650 nm. The emission band of the complex is characterized by a series of spectral dips in the visible emission profile. The complex exhibits sensitized near- IR emission via two kinds of energy transfers from phen to Er(III): nonradiative and radiative energy transfers.

• Proceeding of EDISON Challenge
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• 2013.04a
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• pp.256-259
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• 2013

We investigate co-doping effects of conjugated P-N B-N with increasing of N concentration in the graphene sheets using a first principles based on the density functional theory. N doping sites of the graphene consider two possible sites (pyridinic and porphyrin-like). Energy calculation shows that additional doping of B atom in the porphyrin-like N doped graphene ($V+B-N_x$) is hard to form. At the low chemical potential of N, one N atom with additional doping in the graphene ($V+P-N_1$, $P/B-N_1$) has low formation energy on the other hand at high chemical potential of N, high concentration of N ($V+P-N_4$, $P/B-N_3$) in the graphene is governing conformation. From the results of electronic band structure calculation, it is found that $V+P-N_4$ and $P/B-N_3$ cases change the Fermi energy therefore type change is occurred. On the other hand, the cases of $V+P-N_1$ and N+B recover the electronic structure of pristine graphene.

• Applied Science and Convergence Technology
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• v.23 no.6
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• pp.376-386
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• 2014

Zinc oxysulfide nanocrystals (ZnOS NCs) were synthesized by forming ZnS phase on a ZnO matrix. ZnO nanocrystals (NCs) with a diameter of 10 nm were synthesized by forced hydrolysis in an organic solvent. As-synthesized ZnO NCs aggregated with each other due to the high surface energy. As acetic acid (AA) was added into the milky suspension of the aggregated ZnO NCs, transparent solution of well dispersed ZnO NCs formed. Finally ZnOS NCs were formed by adding thioacetic acid (TAA) to the transparent solution. The effect of recrystallization on the structural, optical and electrical properties of the ZnOS NCs were studied. The results of UV-vis absorption confirmed the band gap tunability caused by increasing the curing temperature of ZnOS thin films. This may have originated from the larger effective size due to the recrystallization of zinc sulfide (ZnS). From XRD result we identified that ZnOS thin films have a zinc blende crystal structure of ZnS without wurtzite ZnO structure. This is probably due to the small amount of ZnO phases. These assertions were verified through EDS of FE-SEM, XPS and EDS mapping of HR-TEM results; we clearly proved that ZnOS were comprised of ZnS and ZnO phases.