• The Journal of the Korea Contents Association
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• v.4 no.1
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• pp.18-23
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• 2004

In this paper, we propose a new visual feature extraction method for content-based image retrieval(CBIR) based on wavelet transform which has both spatial-frequency characteristic and multi-resolution characteristic. We extract visual features for each frequency band in wavelet transformation and use them to CBIR. The lowest frequency band involves spacial information of original image. We extract L feature vectors using fuzzy homogeneity in the wavelet domain, which consider both the wavelet coefficients and the spacial information of each coefficient. Also, we extract 3 feature vectors wing the energy values of high frequency bands, and store those to image database. As a query, we retrieve the most similar image from image database according to the 10 largest homograms(normalized fuzzy homogeneity vectors) and 3 energy values. Simulation results show that the proposed method has good accuracy in image retrieval using 90 texture images.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.13 no.1
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• pp.333-342
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• 2012

This paper presents a vowel onset point (VOP) detection method based on the human auditory system. This method maps the "perceptual" frequency scale, i.e. Mel scale onto a linear acoustic frequency, and then establishes a series of Triangular Mel-weighted Filter Bank simulate the function of band pass filtering in human ear. This nonlinear critical-band filter bank helps greatly reduce the data dimensionality, and eliminate the effect of harmonic waves to make the formants more prominent in the nonlinear spaced Mel spectrum. The sum of mel spectrum peaks energy is extracted as feature for each frame, and the instinct at which the energy amplitude starts rising sharply is detected as VOP, by convolving with Gabor window. For the single-word database which contains 12 vowels articulated with different kinds of consonants, the experimental results showed a good average detection rate of 72.73%, higher than other vowel detection methods based on short-time energy and zero-crossing rate.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.146-146
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• 2011

The blue light emitting diode (LED) structure based on non-polar a-plane (11-20) GaN which was coated TiO2 nanoparticles using spin coating method was grown on r-plane (1-102) sapphire substrates to improve light extraction efficiency. We report on the emission and structural properties with temperature dependence of photoluminescence (PL) and x-ray rocking curves (XRC). From PL results at 13 K of undoped GaN samples, basal plane stacking fault (BSF) and near band edge (NBE) emission peak were observed at 3.434 eV and 3.484 eV, respectively. We also found the temperature-induced band-gap shrinkage, which was fitted well with empirical Varshini's equation. The PL intensity of TiO2 nanoparticles ?coated multiple quantum well (MQW) sample is decayed slower than that of no coating sample with increasing temperature. The anisotrophic strain and azimuth angle dependence in the films were shown from XRC results. The full width at half maximum (FWHM) along the GaN [11-20] and [1-100] directions were 564.9 arcsec and 490.8 arcsec, respectively. A small deviation of FWHM values at in-plane direction is attributed to uniform in-plane strain.

• Korean Journal of Food Science and Technology
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• v.10 no.4
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• pp.415-422
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• 1978

Some minor Korean beans including red bean, mung bean and kidney bean were subjected to proximate analysis, fractionation by the solubility method and polyacrylamide gel disc electrophoresis of proteins to obtain the following results. 1) Proximate composition of the beans showed that fat content was less than 1%, carbohydrate was about 60% and protein content was in the range of $20{\sim}25%$. 2) Total globulin content of the proteins was $46{\sim}59%$, a little lower than in soybean, in the order of mung bean> kidney bean> red bean. Albumin content was comparable in kidney bean, and lower in red bean and mung bean as compared with that in soybean. Glutelin content was relatively higher, being in the range of $10{\sim}19%$ and in the order of red bean> mung bean> kidney bean. 3) According to the electrophoretic pattern, total protein fractions extracted with pH 7.6 buffer from red bean, mung bean and kidney bean showed 9.12 and 11 bands, respectively, whereas those extracted with pH 4.8 buffer showed 13, 13 and 12 bands, respectively. Water extracts of red bean, mung bean and kidney bean showed 10, 8 and 9 bands, respectively, while albumin fractions showed 8, 9 and 7 bands and globulin fractions, 4 bands in all of three beans. The band having a Rm value of $0.5{\sim}0.7$ in the globulin fraction from three beans was not observed in the water extract and appears to be specific to water insoluble globulin.

• Applied Chemistry for Engineering
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• v.10 no.1
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• pp.105-111
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• 1999

When the preparation method of iron silicide films possess the annealing process, the interfacial state of the films is not fine. The good quality films were obtained as the plasma was used without annealing processing. Since the injected precursors were various active species in the plasma state, the organic compound was contained in the prepared films. We confirmed the formation of Fe-Si bonds as well as the organic compound by Fe and Si vibration mode in Raman scattering spectrum at $250cm^{-1}$ and Ft-IR. Because of epitaxy growth being progressed by the high energy of plasma at the low temperature of substrate, iron silicide was epitaxially grown to ${\beta}$-phase that had lattice structure such as [220]/[202] and [115]. Band gap of the prepared films had value of 1.182~1.174 eV and optical gap energy was shown value of 3.4~3.7 eV. The Urbach tail and the sub-band-gap absorptions were appeared by organic compound in films. We knew that the prepared films by plasma were obtained a good quality films because of being grown single crystal.

• Journal of Sensor Science and Technology
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• v.24 no.6
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• pp.404-411
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• 2015

A stoichiometric mixture of evaporating materials for $BaAl_2Se_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $BaAl_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $610^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $BaAl_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method are $8.29{\times}10^{-16}cm^{-3}$ and $278cm^2/vs$ at 293 K, respectively. The temperature dependence of the energy band gap of the $BaAl_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=3.4205eV-(4.3112{\times}10^{-4}eV/K)T^2/(T+232 K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $BaAl_2Se_4$ have been estimated to be 249.4 meV and 263.4 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $BaAl_2Se_4/GaAs$ epilayer. The three photocurrent peaks observed at 10 K are ascribed to the $A_1$-, $B_1$-exciton for n =1 and $C_{31}$-exciton peaks for n=31.

• Korean Journal of Materials Research
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• v.12 no.11
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• pp.875-879
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• 2002

$Pb_{1-x}$ $Cd_{x}$ $I_2$ (x=0.0, 0.2, 0.5, 0.7, 0.9, 1.0) single crystals were grown by using Bridgman method and their structural and optical properties were investigated from the measurement of X-ray diffraction, optical absorption and photoluminescence. As-grown single crystals have hexagonal closed packed layered structure. The values of lattice constant c decrease with increasing composition x. Direct and indirect transition optical energy band gaps are calculated from optical absorption spectra measured at room temperature. They increase exponentially from 2.3eV to 3.2 eV with increasing composition x. The energies of photoluminescence peak due to donor bound exciton measured at 6K increase with increasing composition . However, the peak energies of donor-acceptor pair (DAP) are independent of the optical energy band gaps of $Pb_{1-x}$/$Cd_{x}$ $I_2$ single crystals.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.5 no.3
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• pp.240-249
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• 1995

Rutile type of $TiO_{2}$ single crystal was grown by floating zone method in order to obtain the highly transparent and contamination-free single crystal. The linear refractive index of perpendicular and parallel to c-axis was measured as a function o f wavelength from 500 to 1000nm. The optical energy band gap was estimated as 2.99 eV from the absorption spectrum. The theoretical $\chi^{(3)}$} value of $TiO_{2}$ was discussed in comparison with that of $SiO_{2}$ quartz single crystal on the basis of semiempirical model. On the other hand, the second-hyperpolarizability, ${\gamma}({Ti}^{4+})$ was calculated in order to describe the effect of $Ti_{4}$ ion on the third order nonlinear optical properties.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.12 no.4
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• pp.196-201
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• 2002

The $AgInS_{2}$ epilayers with a chalcopyrite structure grown using a hot-wall epitaxy method have been confirmed to be a high quality crystal. From the optical absorption measurements, a temperature dependence of the energy band gap on $AgInS_{2}/GaAs$ was found to be $Eg(T)=2.1365eV-(9.89{\times}10^{-3}eV)T^{2}/(2930+T)$. After the as-grown $AgInS_{2}/GaAs$ was annealed in Ag-, S-, and In-atmospheres, the origin of point defects of $AgInS_{2}/GaAs$ has been investigated by using photoluminescence measurements at 10 K. The native defects of $V_{Ag},\;V_{S},\;Ag_{int}$ and $S_{int}$ obtained from photoluminescence measurements were classified as donors or accepters. It was concluded that the heat-treatment in the S-atmosphere converted $AgInS_{2}/GaAs$ to an optical p-type. Also, it was confirmed that In in $AgInS_{2}/GaAs$ did not form the native defects because In in $AgInS_{2}$ did exist in the stable form.

• Journal of the Institute of Electronics and Information Engineers
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• v.52 no.12
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• pp.67-73
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• 2015

This paper presents a fully integrated 3 - 5 GHz IR-UWB(impulse radio ultra-wide band) RFIC for Location based system. The receiver architecture adopts the energy detection method and for high speed sampling, the equivalent time sampling technique using the integrated DLL(delay locked loop) and 4 bit ADC. The digitally synthesized UWB impulse generator with low power consumption is also designed. The designed IR-UWB RFIC is implemented on $0.18{\mu}m$ CMOS technology. The receiver's sensitivity is -85.7 dBm and the current consumption of receiver and transmitter is 32 mA and 25.5 mA respectively at 1.8 V supply.