• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.1
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• pp.12-17
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• 1999

$MgIn_2Se_4 and MgIn_2Se_4 : Ni^{2+}$ single crystals were grown in the rhombohedral structure by the chemical transport reaction (C.T.R.) method using iodine as a transport agent. The optical absorption measured near the fundamental band edge showed that the optical energy band structure of these compounds had a direct band gap. The fundamental absorption band edge of these single crystals shift to a shorter wavelength region by decreasing temperature and the temperature dependence of the optical energy gaps in these compounds satisfy Varshni equation. The impurity optical absorption peaks due to nickel are observed in $MgIn_2Se_4 and MgIn_2Se_4 : Ni^{2+}$ single crystal. These impurity optical absorption peaks can be attributed to the electronic transitions between the split energy levels of $Ni_{2+}$ ions located at $T_d$ symmetry site of $MgIn_2Se_4$ host lattice. In the hotoluminescence spectrum of the single crystal at 10 K, a blue emission with a peak at 687nm and a green emission with a peak at 815nm for the $MgIn_2Se_4$ single crystal were observed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.179-180
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• 2007

Single crystal $AgGaSe_2$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at $420^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $AgGaSe_2$ source at $630^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $AgGaSe_2$ thin films measured with Hall effect by van der Pauw method are $4.05{\times}\;10^{16}/cm^3$, $139\;cm^2/V{\cdot}s$ at 293 K. respectively. The temperature dependence of the energy band gap of the $AgGaSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=1.9501\;eV\;-\;(8.79{\times}10^{-4}\;eV/K)T^2$/(T + 250 K). The crystal field and the spin-orbit splitting energies for the valence band of the $AgGaSe_2$ have been estimated to be 0.3132 eV and 0.3725 eV at 10 K, respectively, by means of the phcitocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}So$ definitely exists in the $\Gamma_5$ states of the valence band of the $AgGaSe_2$. The three photocurrent peaks observed at 10 K are ascribed to the $A_1$-, $B_1$-, and $C_1$-exciton peaks for n = 1.

• Journal of the Korean Electrochemical Society
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• v.14 no.3
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• pp.145-151
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• 2011

ZnSe, as a II-VI compound semiconductor which has a wide band gap in the visible region is applicable to the various fields such as laser diode, display and solar cell. By using the electrochemical deposition method, ZnSe thin film was synthesized on the ITO glass substrate. The synthesis of ZnSe grains and their structure having zinc blende shape were verified through the analysis of XRD and SEM. UV spectrophotometric method determined the band gap as the value of 2.76 eV. Applying the DFT (Density Functional Theory) in the molecular dynamics, the band structure of ZnSe grains was analyzed. For ZnSe grains with zinc blende structure, the band structure and its density of state were simulated using LDA (Local Density Approximation), PBE (Perdew Burke Ernzerhof), and B3LYP (Becke, 3-parameter, Lee-Yang-Parr) functionals. Among the calculations of energy band gap upon each functional, the simulated one of 2.65 eV based on the B3LYP functional was mostly near by the experimental measurement.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2005.05a
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• pp.971-977
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• 2005

Power Flow Analysis (PFA) is developed for the effective predictions of frequency-averaged vibrational response in medium-to-high frequency ranges. In PFA, the power coefficients of semi-infinite structure and for-field energy density are used to predict the vibrational responses of structures. Generally, at high frequencies, PFA can predict narrow-band frequency-averaged vibrational responses of built-up structures. However, in low- to medium frequency ranges, the dynamic responses obtained by PFA represent broad-band frequency-averaged vibrational energy densities. For the prediction of vibrational response variance in Power Flow Finite Element Method (PFFEM), the variances of input power and joint element matrix describing structural coupling relationship are derived. Finally, for the validity of developed formulation, numerical examples for two co-planer plates are performed and the vibrational response variance of the structure are compared with the results of classical and PFFEM solutions.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.380-380
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• 2010

The chalcopyrite $ZnIn_2S_4$ epilayers were grown on the GaAs substrate by using a hot-wall epitaxy (HWE) method. The crystal field and the spin-orbit splitting energies for the valence band of the $ZnIn_2S_4$ have been estimated to be 0.1541 eV and 0.0129 eV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the $\Gamma_5$ states of the valence band of the $ZnIn_2S_4$/GaAs epilayer. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1^-}$, $B_{1^-}$, and $C_1$-exciton peaks for n = 1. Also, we obtained the $A_{\infty^-}$ and B-exciton peaks from the PC spectrum at 293 K.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.459.1-459.1
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• 2014

Because both $TiO_2$ and ZnO has superior characteristic optically and electrically, there are various of research for these materials. However, they have large band gap energy which correspond with not visible light, but UV light. To make up for this disadvantage, Quantum dots (CdS, CdSe) which can absorb the visible light could be deposited on $ZnO/TiO_2$ nanostructure so that the the photoelectrochecmical cell can absorb the light that has larger region of wavelength. Both $TiO_2$ and ZnO can be grown to one-dimensional nanowire structure at low temperature through solutional method. Three-dimensional hierarcical $ZnO/TiO_2$ nanostructure is fabricated by applying these process. Large surface area of this structure make the light absorbed more efficiently. Through type 2 like-cascade energy band structure of nanostructure, the efficient separation of electron-hole pairs is expected. Photoelectrochemical charateristics are found by using these nanostructure to photoelectrode.

• Proceedings of the KIEE Conference
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• 2002.06a
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• pp.94-97
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• 2002

CdS and $CdS:Co^{2+}$ single crystals were grown by CTR method using iodine as transport material. The grown single crystals have defect chalcopyrite structure with direct band gap. The optical energy band gap was decreased according to add of Co-impurity. We can observed the Co-impurity optical absorption peaks assigned to the $Co^{2+}$ ion sited at the $T_d$ symmetry lattice and we consider that they were attributed to the electron transitions between energy levels of ions.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2009.10a
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• pp.705-708
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• 2009

This research describes a neural network-based phoneme segmenter for recognizing spontaneous speech. The input of the phoneme segmenter for spontaneous speech is 16th order mel-scaled FFT, normalized frame energy, ratio of energy among 0~3[KHz] band and more than 3[KHz] band. All the features are differences of two consecutive 10 [msec] frame. The main body of the segmenter is single-hidden layer MLP(Multi-Layer Perceptron) with 72 inputs, 20 hidden nodes, and one output node. The segmentation accuracy is 78% with 7.8% insertion.

• Proceedings of the Korean Magnestics Society Conference
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• 2012.11a
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• pp.172-172
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• 2012

A Pt-skin $Pt_3Ni$(111) surface was reported to show high catalytic activity. In this study, we investigated the magnetic properties and electronic structures of the various oriented surfaces of bulk-terminated and Pt-segregated $Pt_3Ni$ by using a first-principles calculation method. The magnetic moments of Pt and Ni are appreciably enhanced at the bulk-terminated surfaces compared to the corresponding bulk values, whereas the magnetic moment of Pt on the Pt-segregated $Pt_3Ni$(111) surface is just slightly enhanced because of the reduced number of Ni neighboring atoms. Spin-decomposed density of states shows that the dz2 orbital plays a dominant role in determining the magnetic moments of Pt atoms in the different orientations. The lowering of the d-band center energy (-2.22 eV to -2.46 eV to -2.51 eV to -2.65 eV) in the sequence of bulk-terminated (100), (110), (111), and Pt-segregated (111) may explain the observed dependence of catalytic activity on surface orientation. Our d-band center calculation suggests that an observed enhanced catalytic activity of a $Pt_3Ni$(111) surface originates from the Pt-segregation.

• Proceedings of the KIEE Conference
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• 1996.07a
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• pp.525-527
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• 1996

Hysteresis current control is one of the simplest techniques used to control currents for high speed drive systems, because of its simplicity of implementation, fast current control response, and inherent peak current limiting capability. However the conventional fixed-band hysteresis control has a variable switching frequency throughout the fundamental period, and consequently the load current harmonics spreaded on the wide frequency range. In this paper, a simple, novel alterative approach is proposed for a variable-hysteresis band current controller which uses feedback techniques to achieve constant switching frequency with good dynamic response. The method is easily implemented in hardware, the resultant controller is easily tuned to a particular load, and has good immunity to variation in PV parameter and dc supply voltage.