• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.31-31
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• 2010

The growth of the high-quality GaN epilayers is of significant technological importance because of their commercializedoptoelectronic applications as high-brightness light-emitting diodes (LEDs) and laser diodes (LDs) in the visible and ultraviolet spectral range. The GaN-based heterostructural epilayers have the polar c-axis of the hexagonal structure perpendicular to the interfaces of the active layers. The Ga and N atoms in the c-GaN are alternatively stacked along the polar [0001] crystallographic direction, which leads to spontaneous polarization. In addition, in the InGaN/GaN MQWs, the stress applied along the same axis contributes topiezoelectric polarization, and thus the total polarization is determined as the sum of spontaneous and piezoelectric polarizations. The total polarization in the c-GaN heterolayers, which can generate internal fields and spatial separation of the electron and hole wave functions and consequently a decrease of efficiency and peak shift. One of the possible solutions to eliminate these undesirable effects is to grow GaN-based epilayers in nonpolar orientations. The polarization effects in the GaN are eliminated by growing the films along the nonpolar [$11\bar{2}0$] ($\alpha$-GaN) or [$1\bar{1}00$] (m-GaN) orientation. Although the use of the nonpolar epilayers in wurtzite structure clearly removes the polarization matters, however, it induces another problem related to the formation of a high density of planar defects. The large lattice mismatch between sapphiresubstrates and GaN layers leads to a high density of defects (dislocations and stacking faults). The dominant defects observed in the GaN epilayers with wurtzite structure are one-dimensional (1D) dislocations and two-dimensional (2D) stacking faults. In particular, the 1D threading dislocations in the c-GaN are generated from the film/substrate interface due to their large lattice and thermal coefficient mismatch. However, because the c-GaN epilayers were grown along the normal direction to the basal slip planes, the generation of basal stacking faults (BSFs) is localized on the c-plane and the generated BSFs did not propagate into the surface during the growth. Thus, the primary defects in the c-GaN epilayers are 1D threading dislocations. Occasionally, the particular planar defects such as prismatic stacking faults (PSFs) and inversion domain boundaries are observed. However, since the basal slip planes in the $\alpha$-GaN are parallel to the growth direction unlike c-GaN, the BSFs with lower formation energy can be easily formed along the growth direction, where the BSFs propagate straightly into the surface. Consequently, the lattice mismatch between film and substrate in $\alpha$-GaN epilayers is mainly relaxed through the formation of BSFs. These 2D planar defects are placed along only one direction in the cross-sectional view. Thus, the nonpolar $\alpha$-GaN films have different atomic arrangements along the two orthogonal directions ($[0001]_{GaN}$ and $[\bar{1}100]_{GaN}$ axes) on the $\alpha$-plane, which are expected to induce anisotropic biaxial strain. In this study, the anisotropic strain relaxation behaviors in the nonpolar $\alpha$-GaN epilayers grown on ($1\bar{1}02$) r-plane sapphire substrates by metalorganic chemical vapor deposition (MOCVO) were investigated, and the formation mechanism of the abnormal zigzag shape PSFs was discussed using high-resolution transmission electron microscope (HRTEM).

• Journal of Biomedical Engineering Research
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• v.25 no.2
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• pp.157-163
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• 2004

Nitrogen ion implantation and ion plating techniques were applied for improvement of the wear resistance of metallic implant materials. In this work, the wear dissolution behaviour of a nitrogen ion implanted super stainless steel (S.S.S, 22Cr-20Ni-6Mo-0.25N) was compared with those of S.S.S, 316L SS and TiN coated 316L SS. The amounts of Cr and Ni ions worn-out from the specimens were Investigated using an electrothermal atomic absorption spectrometry. Furthermore, the Ti(Grade 2) disks were coated with TiN, ZrN and TiCN by use of low temperature arc vapor deposition and the wear resistance of the coating layers was compared with that of titanium. The chemical compositions of the nitrogen ion implanted and nitride coated layers were examined with a scanting auger electron spectroscopy. It wat observed that the metal ions released from the nitrogen ion implanted S.S.S surface were significantly reduced. From the results obtained, it was shown that the nitrogen ion implanted zone obtained with 100 KeV ion energy was easily removed within 200,000 revolutions from a wear dissolution testing under a similar load condition when applied to artificial hip joint. The remarkable improvement in wear resistance weir confirmed by the nitrides coated Ti materials and the wear properties differ greatly according to the chemical composition of the coating layers. for specimens with the same coating thickness of about 3$\mu\textrm{m}$, TiCN coated Ti showed the highest wear resistance. However, after removing the coating layers, the wear rates of all nitrides coated Ti reverted to their normal rates of below 10,000 revolutions from Ti-disk-on-disk wear testing under the same load condition. From the results obtained, it is suggested that the insufficient depth of the 100 Kel N$\^$＋/ ion implanted zone and of the nitrides coated layers of 3$\mu\textrm{m}$ are subject to restriction when used as frictional parts of load bearing implants.

• Economic and Environmental Geology
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• v.22 no.3
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• pp.221-235
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• 1989

Gold-silver mineralization of the Goryeong-Waegwan area was deposited in three stages of quartz and calcite veins which fill fissures in Cretaceous sedimentary rocks of the Sindong Group. Radiometric dating indicates that mineralization is Late Cretaceous age(98 Ma) likely associated genetically with intrusion of a small biotite granite stock. Fluid inclusion and stable isotope data indicate that Au-Ag ore was deposited at temperatures between $280^{\circ}C$ and $230^{\circ}C$ from fluids with salinities between 1.7 and 8.7 equiv.wt.% NaCl. Evidence of boiling indicates pressures of <100 bars, corresponding to depths of 425 and 1,150m, respectively, assuming lithostatic and hydrostatic loads. Within ore stage I there is an apparent decrease in ${\delta}^{34}S$ values of $H_2S$ with paragenetic time, from +1.4 to -2.5 per mil. This pattern was likely achieved through progressive increases in pH and activity of oxygen accompanying boiling. Measured and calculated hydrogen and oxygen isotope values of ore-forming fluids(${\delta}D$ = -90 to -100 per mil; ${\delta}^{18}O$ = +3.9 to -11.4 per mil) indicate meteoric water dominance, approaching unex-changed meteoric water values. Au-Ag deposition is thought to be the result of cooling and dilution of a boiling fluid through mixing with less evolved meteoric waters.

• Korean Journal of Materials Research
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• v.8 no.12
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• pp.1158-1164
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• 1998

Aluminium sulfate solution was prepared by sulfuric acid treatment from gibbsite. Aluminium sulfate hydrate [$Al_2(SO_4)_3$ · $nH_2O$] was precipitated from aluminium sulfate solution by adding it into ethylalcohol. From XRD analysis as-prepared $Al_2(SO_4)_3$ · $nH_2O$ was confirmed to have mixed-crystalization water(n=18, 16, 12, 6). The average water of crystalization calculated from thermogravimetry(TG) was 14.7. Aluminium sulfate hydrate [$Al_2(SO_4)_3$ · $nH_2O$] was thermally decomposed and converted to $Al_2(SO_4)_3$ at $800^{\circ}C$, $\gamma-Al_2O_3$ at $900-1000^{\circ}C$, and $\alpha-Al_2O_3$ at $1200^{\circ}C$. Ni-doped $\gamma-Al_2O_3$, was synthesized from the slurry of as-prepared $\gamma-Al_2O_3$, with the ratio of [Ni]/[Al]=0.5. The reaction conditions of synthesis were determined as initial pH 9.0 and temperature $80^{\circ}C$ The basicity(pH) of slurry was controlled by using urea and $NH_4OH$ solution. Urea was also used for deposition-precipitation. For determining termination of reaction, the data acquisition was performed by oxidation reduction potential(ORP), conductivity and pH value in the process of reaction. Termination of the reaction was decided by observing the reaction steps and rapid decrease in conductivity. On the other hand, BET(Brunauer, Emmett and Teller) and thermal diffusity of Ni- doped $\gamma-Al_2O_3$, with various content of Ni were measured and compared. Thermal stability of Ni- doped $\gamma-Al_2O_3$ at $1250^{\circ}C$ was confirmed from BET and XRD analysis. The surface state of Ni-doped $\gamma-Al_2O_3$ was investigated by X-ray photoelectron spectroscopy(XPS). The binding energy at $Ni2P_{3/2}$ increased with increasing the formation of $NiAl_2O_4$ phase.

• The Sea:JOURNAL OF THE KOREAN SOCIETY OF OCEANOGRAPHY
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• v.5 no.2
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• pp.105-118
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• 2000

Anchored measurements (12.5 hr) of suspended sediment concentration and other hydrodynamic parameters were carried out at two stations located at the entrance to Hampyung Bay in summer (August 1999). Tidal variations in water temperature and salinity were in the range of 26.0-27.9$^{\circ}C$ and 30.9-31.5, respectively, indicating exchange offshore and offshore water mass. Active tidal mixing processes at the entrance appear to destroy the otherwise vertical stratification in temperature and salinity in spite of strong solar heating in summer. On the contrary, suspended sediment concentrations show a marked stratification with increasing concentrations toward bottom layer. Clastic particles in suspended sediments consist mostly of very fine to fine silt (4-16 ${\mu}$m) with a poorly-sorted value of 14.7-25.9 ${\mu}$m. However, at slack time with less turbulent energy, flocs larger than 40 ${\mu}$m are formed by cohesion and inter-collision of particles, resulting in a higher settling velocity. Strong ebb-dominated and weak flood dominated tidal currents, in the southwestern and the northeastern part, respectively, result in a seaward residual flow of -10${\sim}$-20 cm $s^{-1}$ at station H1 and a bayward residual flow less than 5.0 cm $s^{-1}$ at station H2. However, mean concentration of suspended sediments at station H1 is higher at flood (95.0-144.1 mg $1^{-1}$) than in ebb (75.8-120.9 mg $1^{-1}$). On the contrary, at the station H2, the trend is reversed with higher concentration at the ebb (84.7-158.4 mg $1^{-1}$) than that at the flood (53.0-107.9 mg $1^{-1}$). As a result, seaward net suspended sediment fluxes ($f_{s}$) are calculated to be -1.7 ${\sim}$-$15.610^{3}$ kg $m^{-2}$ $s^{-1}$ through the whole water column. However, the stations H1 and H2 show definitely different values of the flux with higher ones in the former than in the latter. Alternatively, depth-integrated net suspended sediment loads ($\c{Q}_{s}$) for one tidal cycle are also toward the offshore with ranges of 0.37${\times}$$10^{3}$ kg $m^{-1}$ and 0.21${\times}$$10^{3}$ kg $m^{-1}$, at station H1 and H2, respectively. This seaward transport of suspended sediment in summer suggests that summer-time erosion in the Hampyung muddy tidal flats is a rather exceptional phenomenon compared to the general deposition reported for many other tidal flats on the west coast of Korea.