• 한국원자력학회:학술대회논문집
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• 한국원자력학회 2005년도 춘계학술발표회
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• pp.291-292
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• 2005

• 한국진공학회지
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• 제10권3호
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• pp.283-288
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• 2001

본 연구에서는 분자동력학 방법을 사용하여 알루미늄 덩어리 충돌에 관하여 연구하였다. 충돌에 따른 운동량 및 충격력 변화를 통하여, 덩어리 충돌은 단일입자충돌(single particle collision) 특성 일부와 선형사슬충돌(linear chain collisions) 특성 일부를 가지는 것을 살펴보았다. 또한 연속적인 덩어리 증착을 통하여 성장된 박막의 특성을 살펴보았다 원자당 에너지가 너무 낮은 경우보다는 일정 에너지 이상에서 혼합(intermixing) 발생이 잘 이루어지며 짝은 어닐링 공정으로 좋은 박막을 얻을 수 있다는 것을 살펴보았다.

• 공업화학
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• 제19권1호
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• pp.117-121
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• 2008

본 연구에서는 정전분무법을 이용하여 YSZ 박막을 제조하였다. 제조된 박막은 제조시 전구체 용액, 지지체 온도 등에 크게 영향을 받았으며, 특히 지지체 온도가 $400^{\circ}C$일 때 치밀한 YSZ 박막을 형성할 수 있었다. 최적조건 하에서 정전분무법을 활용하면 약 $12{\mu}m/h $의 속도로 치밀한 YSZ 박막을 형성할 수 있었다. 제조된 박막은 XRD, FE-SEM, EDX 등을 이용하여 분석하였다.

• 태양에너지
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• 제6권1호
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• pp.12-23
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• 1986

The PECVD $SiN_x:H$ films were made from the $SiH_4-N_2$ gas mixtures under such deposition conditions as 0.01 to 1.0 of $SiH_4/N_2$ volume ratio, 0.1 to $0.8W/cm^2$ of RF power, and 100 to $400^{\circ}C$ of substrate temperature. The deposition rate, refractive index, hydrogen concentration, N/Si composition, optical gap and electric conductivity were measured, and the thermal stability and the optimum deposition conditions were investigated for the application of these films to the solar cell materials.

• 한국세라믹학회지
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• 제56권3호
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• pp.269-276
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• 2019

This article reports on the conditions required for the growth of crystalline boron films on silicon substrates by hot filament chemical vapor deposition method. The reactive gas was 3% diborane diluted in hydrogen. The films were characterized by optical, electronic, and atomic force microscopies; x-ray diffraction; and energy dispersive, electron energy loss, Raman, x-ray photoelectron, and Auger spectroscopies. The parameters that affect the morphologies of the films have been investigated. It was concluded that faceted crystals are produced at low B₂H₆ flows and working pressures below 200 mT. α-boron is produced between 530 and 600℃. Deposition outside this range produces thin films with a wide variety of morphologies. This result indicates that the films crystallize through a process called "abnormal or discontinuous grain growth." It is assumed that this is due to the anisotropic surfaces of boron allotropes.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제48권5호
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• pp.344-348
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• 1999

Diamond like carbon(DLC) thin films possesed not only marvelous material characteristics such as large thermal conductivity, high hardness and being chemically inert, but also possesed negative electron affinity (NEA) properties. The NEA is an extremely desirable property of the material used in microelestronics and vacuum microelestronics device. DLC films were fabricated by pulsed laser deposition(PLD). Theeffect of the laser energy density and the substrate temperature on the properies of DLC films was investigated. The experiment was accomplished at temperatures in the range of room temperature to $600^{\circ}C$. The laser energy density was in the range of 6 $J/cm^2$ to 16 $J/cm^2$.

• Journal of Korean Vacuum Science & Technology
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• 제3권2호
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• pp.116-120
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• 1999

Possible role of hydrogen atoms on the formation of microcrystalline silicon films was schematically investigated using a plasma enhanced chemical vapor deposition system. A layer-by-layer technique that can alternate deposition of ${\alpha}$-Si thin film and then exposure of H2 plasma was used for this end. The experimental process was extensively carried out under different hydrogen plasma times (t2) at a fixed number of 20 cycles in the deposition. structural properties, such as crystalline volume fractions and grain shapes were analyzed by using a Raman spectroscopy and a scanning electron microscopy. Electrical transports were characterized by the temperature dependence of the dark conductivity that gives rise to the calculation of activation energy (Ea). Optical absorption was measured using an ultra violet spectrophotometer, resulting in the optical energy gap (Eopt). Our experimental results indicate that both of the hydrogen etching and the structural relaxation effects on the film surface seem to be responsible for the growth mechanism of the crystallites in the ${\mu}$c-si films.

• Progress in Superconductivity
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• 제7권2호
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• pp.130-134
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• 2006

Buffer layers such as $CeO_2\;and\;Yb_2O_3$ films for YBCO coated conductors were deposited on (100) $SrTiO_3$ single crystals and (100) textured Ni substrates by a metal organic chemical vapor deposition (MOCVD) system of the hot-wall type. The substrates were moved with the velocity of 40 cm/hr. Source flow rate, $Ar/O_2$ flow rate and deposition temperature were main processing variables. The degree of film epitaxy and surface morphology were investigated using XRD and SEM, respectively. On a STO substrate, the $CeO_2$ film was well grown epitaxially above the deposition temperature of $450^{\circ}C$. However, on a Ni substrate, the XRD showed NiO (111) and (200) peaks due to Ni oxidation as well as (111) and (200) film growth. For the films deposited with $O_2$ gas as oxygen source, it was found that the NiO film was formed at the interface between the buffer layer and the Ni substrate. The NiO layer interrupts the epitaxial growth of the buffer layer. It seems that the epitaxial growth of the buffer layer on Ni metal substrates using $O_2$ gas is difficult. We are considering a new method avoiding Ni oxidation with $H_2O$ vapor instead of $O_2$ gas.

• 한국기계가공학회지
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• 제20권9호
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• pp.1-10
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• 2021

Recently, the repair and recycling of damaged mechanical parts via metal additive manufacturing processes have been industrial points of interest. This is because the repair and recycling of damaged mechanical parts can reduce energy and resource consumption. The directed energy deposition(DED) process has various advantages such as the possibility of selective deposition, large building space, and a small heat-affected zone. Hence, it is a suitable process for repairing damaged mechanical parts. The shaft is a core component of various mechanical systems. Although there is a high demand for the repair of the shaft, it is difficult to repair with traditional welding processes because of the thermal deformation problem. The objective of this study is to propose a repair procedure for a damaged shaft using the DED process and discuss its applications. Three types of cases, including a small shaft with a damaged surface, a medium-size shaft with a worn bearing joint, and a large shaft with serious damage, were repaired using the proposed procedure. The microstructure and hardness were examined to discuss the characteristics of the repaired component. The efficiency of the repair of the damaged shaft is also discussed.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.201-202
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• 2003

We developed a novel growth method of aligned carbon nanotubes. Aligned carbon nanotubes are grown on a metal catalyst on a glass substrate using biased Helicon plasma chemical vapor deposition (HPECVD) of $CH_4/H_2$ gases from 400 C to 500 C. The Helicon plasma source is one of the high-density plasma sources and is promising for low temperature carbon deposition. A Ni film was used as a catalyst to reduce the activation energy of the nanotubes' growth. The carbon nanotubes were deposited on the nickel catalysis layer selectively.