• 한국진공학회지
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• 제7권1호
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• pp.66-71
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• 1998

두가지 종류의 Ga2S3:Er(A형 및 B형) 단결성을 iodine을 수송매체로 사용하는 화학 수송법으로 성장 시켰다. 성장된 단결정은 모두 단사정계 결정구조를 갖고 있었다. 광흡수 측정으로부터 구한 광학적 에너지띠 간격은 13K에서 A형 단결정이 3.375$\pm$0.001cV, B형 단 결정이 3.365$\pm$0.001eV로 주어졌다. 이들 $Ga_2S_3:Er$:Er단결정을 Cd-He 레이저의 325nm-선으로 여기하여 측정한 photoluminescence 스펙트럼에서, A형 단결정은 444nm에 피크가 위치하는 강한 청색발광띠가 나타났다. B형 단결정은 513nm과 695nm에 피크가 위치하는 녹색발광띠 및 적색발광띠 및 적색발광띠만이 나타났다. 두가지 종류의 단결정 모두에서 525nm과 695nm에 피크가 위치하는 녹색발광띠 및 적색발광띠만이 나타났다. 두가지 종류의 단결정 모두에서 525nm, 553nm, 664nm, 812nm, 986nm, 1540nm 파장 영역 부근에 위치하는 예리 한 발광피크들이 나타났으며, 이들 예리한 발광피크는 $Er^{3+}$ 이온의 에너지 준위 사이의 전자 전이에 의하여 나타나는 것으로 해석된다.

• Korean Chemical Engineering Research
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• 제43권1호
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• pp.1-8
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• 2005

본 연구에서는 광촉매의 광자효율을 증가시키고, 물성을 변화시켜 광촉매 성능을 향상시키기 위하여, 자동차 폐 촉매에서 추출된 귀금속 용액 또는 $H_2PtCl_6$ 용액을 수열합성법에 의해 제조된 $TiO_2$와 상업용 $TiO_2$인 P-25(Degussa Co.)를 함침시켜 변조된 광촉매를 제조하였다. 그리고 변조된 광촉매는 ICP-AES, EDS, UV-DRS, XRD, XANES, SEM에 이용하여 물성분석 하였다. 그리고 폐 자동차 촉매전환기의 추출용액을 함침시킨 광촉매를 변조하여 band-gap energy를 1.76eV(705 nm)의 가시광 영역까지 조절하였다. 변조된 광촉매는 PVC가 주성분인 벽지 코팅제와 농도별로 혼합하여 광화학반응을 위한 기능성 도료를 제조하였다. 이 도료를 사용하여 광촉매가 코팅된 기능성 벽지를 제조하였으며, 제조된 벽지의 광촉매 성능을 평가하였다. 반응모델 물질로 NO를 이용하여 촉매 조성, 반응물 농도, 벽지의 촉매 담지량, 반응시간에 따른 광 화학반응속도를 측정하였다. 그 결과 폐 자동차 촉매전환기의 추출용액으로 변조된 $TiO_2$의 광촉매 활성이 크게 증가하였음을 알 수 있었고 그 중에서도 P-25에 추출용액을 함침시킨 P-25(w)의 광촉매가 가장 우수한 광촉매활성도를 나타내었다.

• 문화기술의 융합
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• 제6권4호
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• pp.761-766
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• 2020

페네틸아민 유도체는 생화학적 작용을 하는 물질로 향정신성 약물로 많이 응용되고 있다. 특히 에페드린, 암페타민, 펜터마인 그리고 도파민과 같은 물질의 정량적 검출과 관련해서는 전기화학적, 진공자외선법, 그리고 가스크로마토그래피법 등의 선행연구가 많이 진행되었다. 그러나 분자 단위의 구조적 특성에 따른 연구는 많이 보고되지 않았다. 따라서 이 연구에서는 페네틸아민 유도체의 구조적 특성을 알아보기 위하여 (HyperChem8.0, HC)의 반경험적 PM3 방법을 이용하여 에페드린, 암페타민, 펜터마인 그리고 도파민의 전체에너지, 밴드갭, 정전포텐셜, 전하량을 계산하여 각 유도체의 분자구조적 변화에 따른 화학적 특성을 조사하였다. 그 결과 총에너지의 경우 -43,171.8, -32,9538.3, -36,407.3 그리고 -43,061.2 Kcal/mol로 각각 나타났으며 밴드 갭의 경우 10.1637937, 9.9531666, 9.7878002 그리고 9.0589282 eV로 나타났다. 또한, 정전포텐셜의 경우 1.301~-0.045, 1.694~0.299, 0.694~-0.158 그리고 1.587~-0.048로 각각 나타났다. 마지막으로 알짜전하 분포를 살펴보면 산소 원자, 질소 원자 그리고 탄소 원자의 경우 각각 -0.312~-0.242, -0.161~-0.051 그리고 ＋0.13~-0.12로 나타났다. 이와 같은 결과는 페네틸아민 유도체에 공통으로 존재하는 페닐기와 산소 및 질소 원자를 중심으로 화학작용이 진행될 것으로 예상한다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.441-442
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• 2012

SnNb2O6 nanoplates were prepared by a solvothermal synthesis with water and ethanol mixed solvent. For improvement of their properties, as-prepared SnNb2O6 nanoplates also were calcined. The prepared powder was characterized by X-ray diffraction (XRD), field emission scanning electron microscope (FESEM), Transmission electron microscope (TEM), UV-vis spectroscopy, Raman spectrometer, Brunauer-Emmett-Teller (BET). The calcined nanoplates have a smaller surface area than the as-prepared nanoplates have. Nevertheless, in the case of the optical absorption properties, the calcined nanoplates could absorb more photon energy, due to their smaller band gaps. The Raman analysis revealed that the Nb-O bond length in the calcined nanoplates was longer than that in the as-prepared nanoplate. The higher optical absorption capability of the calcined nanoplates was attributed to the local structure variation within them. Furthermore the high crystallinity of the calcined nanoplates is effective in improving the generation of charge carriers. So, It was found that the calcined nanoplates exhibited superior photocatalytic activity for the evolution of H2 from an aqueous methanol solution than the as-prepared nanoplates under UV and visible irradiation. Therefore, the enhanced photocatalytic activity of the calcined nanoplate powder for H2 evolution was mainly attributed to its high crystallinity and improved optical absorption property resulting from the variation of the crystal structure.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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• pp.154-154
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• 2003

A stoichiometric mixture of evaporating materials for CuGaSe2 single crystal thin films was prepared from horizontal electric furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal CuGaSe2, it was found tetragonal structure whose lattice constant at and co were 5.615 ${\AA}$ and 11.025 ${\AA}$, respectively. To obtain the single crystal thin films, CuGaSe2 mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (MWE) system. The source and substrate temperatures were Slot and 450$^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (UXD). The carrier density and mobility of CuGaSe2 single crystal thin films measured with Hall effect by van der Pauw method are 5.0l${\times}$10$\^$17/ cm$\^$-3/ and 245 $\textrm{cm}^2$/V$.$s at 293K, respectively. The temperature dependence of the energy band gap of the CuGaSe2 obtained from the absorption spectra was well described by the Varshni's relation, Eg(T) = 1.7998 eV - (8.7489${\times}$10$\^$-4/ eV/K)T$^2$/(T + 335 K. After the as-grown CuGaSe2 single crystal thin films was annealed in Cu-, Se-, and Ca-atmospheres, the origin of point defects of CuGaSe2 single crystal thin films has been investigated by the photoluminescence(PL) at 10 K The native defects of V$\_$CU/, V$\_$Se/, Cu$\_$int/, and Se$\_$int/ obtained by PL measurements were classified as a donors or accepters type. And we concluded that the heat-treatment in the Cu-atmosphere converted CuGaSe2 single crystal thin films to an optical n-type. Also, we confirmed that Ga in CuGaSe2/GaAs did not form the native defects because Ga in CuGaSe2 single crystal thin films existed in the form of stable bonds.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.264-264
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• 2013

Strong metal-support interaction effect is an important issue in determining the catalytic ac-tivity for heterogeneous catalysis. In this study, we investigated the support effect and the role of organic capping layers of two-dimensional Pt nanocatalysts on reducible metal oxide supports under the CO oxidation. Several reducible metal oxide supports including CeO2, Nb2O5, and TiO2 thin films were prepared via sol-gel techniques. The structure, chemical state and optical property were characterized using XRD, XPS, TEM, SEM, and UV-VIS spectrometer. We found that the reducible metal oxide supports have a homogeneous thin thickness and crystalline structure after annealing at high temperature showing the different optical band gap energy. Langmuir-Blodgett technique and arc plasma deposition process were employed to ob-tain Pt nanoparticle arrays with capping and without capping layers, respectively on the oxide support to assess the role of the supports and capping layers on the catalytic activity of Pt catalysts under the CO oxidation. The catalytic performance of CO oxidation over Pt supported on metal oxide thin films under oxidizing reaction conditions (40 Torr CO and 100 Torr O2) was tested. The results show that the catalytic activity significantly depends on the metal oxide support and organic capping layers of Pt nanoparticles, revealing the strong metal-support interaction on these nanocatalysts systems.

• Transactions on Electrical and Electronic Materials
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• 제6권5호
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• pp.233-237
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• 2005

In the device structure of ITO/hole injection layer/N, N'-biphenyl-N, N'-bis-(1-naphenyl)-[1,1'-biphenyl]4,4'-diamine(NPB)/tris(8-hydroxyquinoline) aluminum$(Alq_3)/Al$, we investigated an effect of hole-injection materials (PTFE, PVK) on the electrical characteristics and efficiency of organic light-emitting diodes. A thermal evaporation was performed to make a thickness of NPB layer with a evaporation rate of $0.5\~1.0\;\AA/s$ in a base pressure of $5\times10^{-6}$ Torr. We measured current-voltage characteristics and efficiency with a thickness variation of hole-injection layer. The PTFE and PVK hole-injection layer improve a performance of the device in several aspects, such as good mechanical junction, reducing the operating voltage and energy band adjustment. Compared with the devices without a hole-injection layer, we have obtained that an optimal thickness of NPB was 20 nm in the device structure of $ITO/NPB/Alq_3/Al$. And using the PTFE or PVK hole-injection layer, the external quantum efficiencies of the devices were improved by $24.5\%\;and\;51.3\%$, respectively.

• 한국진공학회지
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• 제18권5호
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• pp.384-389
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• 2009

ZnO는 육방정계결정구조의 물질로서 3.37 eV의 넓은 띠 간격과 60 meV의 큰 exciton 결합에너지에 따른 높은 효율의 자외선발광으로 짧은 파장의 빛 (녹, 청, 자외선)을 내는 LED (Light Emitting Diode) 분야에서 관심을 기울이고 있는 물질이다. LED제작을 위해서는 n형의 ZnO와 p형의 ZnO가 필요하지만 기본적으로 ZnO은 n형이므로 신뢰성 있는 p형 ZnO박막을 제작하기 위한 노력이 기울여지고 있다. 본 연구에서는 ALD (Atomic Layer Deposition)로 제작된 ZnO박막에 20 keV의 에너지를 갖는 질소이온을 $10^{13}{\sim}10^{15}ions/cm^2$로 조사한 후 Hall 효과 측정장치를 이용하여 질소이온 조사에 따른 전기적 특성변화를 조사하였다.

• Bulletin of the Korean Chemical Society
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• 제35권10호
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• pp.3052-3058
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• 2014

In this article, we have designed and synthesized a novel donor-${\pi}$-acceptor (D-${\pi}$-A) type porphyrin-based sensitizer (denoted UI-5), in which a carboxyl anchoring group and a 9,9-dimethyl fluorene were introduced at the meso-positions of porphyrin ring via phenylethynyl and ethynyl bridging units, respectively. Long alkoxy chains in ortho-positions of the phenyls were supposed to reduce the degree of dye aggregation, which tends to affect electron injection yield in a photovoltaic cell. The cyclic voltammetry was employed to determine the band gap of UI-5 to be 1.41 eV based on the HOMO and LUMO energy levels, which were estimated by the onset oxidation and reduction potentials. The incident monochromatic photon-to-current conversion efficiency of the UI-5 DSSC assembled with double-layer (20 nm-sized $TiO_2$/400 nm-sized $TiO_2$) film electrodes appeared lower upon overall ranges of the excitation wavelengths, but exhibited a higher value over the NIR ranges (${\lambda}$ = 650-700 nm) compared to the common reference sensitizer N719. The UI-5-sensitized cell yielded a relatively poor device performance with an overall conversion efficiency of 0.74% with a short circuit photocurrent density of $3.05mA/cm^2$, an open circuit voltage of 0.54 mV and a fill factor of 0.44 under the standard global air mass (AM 1.5) solar conditions. However, our report about the synthesis and the photovoltaic characteristics of a porphyrin-based sensitizer in a D-${\pi}$-A structure demonstrated a significant complex relationship between the sensitizer structure and the cell performance.

• 한국재료학회지
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• 제15권8호
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• pp.491-495
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• 2005

(Zn,Mg)O (ZMO) thin films doped with Ga $(0\~0.03mol\%)$ in the target source were prepared by pulsed laser deposition on c-plane sapphire substrates at $500^{\circ}C$, and the effect of Ga contents on the properties of the electrical, optical and crystal properties of the deposited films was investigated. From X-ray diffraction patterns, ZMO film doped with $0.02 mol\%$ Ga showed crystal structure with c-axis preferred orientation, showing only the (0002) and (0004) diffraction peaks. In contrast, ZMO film doped with $Ga=0.03 mol\%$ showed a randomly oriented crystal structure. All the samples were highly transparent, showing the transmittance values of above $85\%$ in the visible region. For all the Ga doped ZMO films, the value of energy band gap was found to be about 3.5 eV, regardless of their Ga contents. From the Hall measurements, the resistivity and the carrier density for the ZMO film doped with $0.01 mol\%$ Ga were about $5\times10^{-4}\Omega-cm$ and $2\times10^{21}cm^{-3}$, respectively.