• Nuclear Engineering and Technology
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• 제52권11호
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• pp.2585-2593
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• 2020

Swift heavy ion (SHI) beam irradiation can generate desirable defects in materials by transferring sufficient energy to the lattice that favours huge possibilities in tailoring of materials. The effect of Ag¹⁵⁺ ion irradiation with energy 200 MeV on spray deposited V₂O₅ thin films of thickness 253 nm is studied at various ion doses from 5 × 10¹¹ to 1 × 10¹³ ions/㎠. The XRD results of pristine film confirmed orthorhombic structure of V₂O₅ and its average crystallite size was found to be 20 nm. The peak at 394 cm^-1 in Raman spectra confirmed O-V-O bonding of V₂O₅, whereas 917 cm^-1 arise because of distortion in stoichiometry by a loss of oxygen atoms. Raman peaks vanished completely above the ion fluence of 5 × 10¹² ions/㎠. Optical studies by UV-Vis spectroscopy shows decrement in transmittance with an increase in ion fluence up to 5 × 10¹² ions/㎠. The red shift is observed both in the direct and indirect band gaps until 5 × 10¹² ions/㎠. The surface topography of the pristine film revealed sheath like structure with randomly distributed spherical nano-particles. The roughness of film decreased and the density of spherical nanoparticles increased upon irradiation. Irradiation improved the conductivity significantly for fluence 5 × 10¹¹ ions/㎠ due to band gap reduction and grain growth.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.193-196
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• 2001

Single phase CuInS$_2$ thin film with the highest diffraction peak (112) at diffraction angle (2$\theta$) of 27.7$^{\circ}$ and the second highest diffraction peak (220) at diffraction angle (2$\theta$) of 46.25$^{\circ}$ was well made with chalcopyrite structure at substrate temperature of 70 $^{\circ}C$, annealing temperature of 25$0^{\circ}C$, annealing time of 60 min. The CuInS$_2$ thin film had the greatest grain size of 1.2 ${\mu}{\textrm}{m}$ and Cu/In composition ratio of 1.03. Lattice constant of a and c of that CuInS$_2$ thin film was 5.60 $\AA$ and 11.12 $\AA$ respectively. Single phase CuInS$_2$ thin films were accepted from Cu/In composition ratio of 0.84 to 1.3. P-type CuInS$_2$ thin films were appeared at over Cu/In composition ratio of 0.99. Under Cu/In composition ratio of 0.96, conduction types of CuInS$_2$ thin films were n-type. Also, fundamental absorption wavelength, the absorption coefficient and optical energy band gap of p-type CuInS$_2$ thin film with Cu/In composition ratio of 1.3 was 837 nm, 3.0x10 $^4$ $cm^{-1}$ / and 1.48 eV respectively. When CuAn composition ratio was 0.84, fundamental absorption wavelength, the absorption coefficient and optical energy band gap of n-type CuInS$_2$ thin film was 821 nm, 6.0x10$^4$ $cm^{-1}$ / and 1.51 eV respectively.

• Journal of Power Electronics
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• 제11권6호
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• pp.870-879
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• 2011

Regulated peak power tracking (RPPT) systems such as the series structure and the series-parallel structures are commonly used in satellite space power systems. However, these structures process the solar array power or the battery power to the load through two cascaded regulators during one orbit cycle, which reduces the energy transfer efficiency. Also the battery charging time is increased due to placement of converter between the battery and the solar array. In this paper a parallel structure has been proposed which can improve the energy transfer efficiency and the battery charging time for satellite space power RPPT systems. An analogue controller is used to control all of the required functions, such as load voltage regulation and solar array stabilization with maximum power point tracking (MPPT). In order to compare the system efficiency and the battery charging efficiency of the proposed structure with those of a series (conventional) structure and a simplified series-parallel structure, simulations are performed and the results are analyzed using a loss analysis model. The proposed structure charges the battery more quickly when compared to the other two structures. Also the efficiency of the proposed structure has been improved under different modes of solar array operation when compared with the other two structures. To verify the system, experiments are carried out under different modes of solar array operation, including PPT charge, battery discharge, and eclipse and trickle charge.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.174-175
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• 2012

(In, Ga) N-based III-nitride semiconductor materials have been viewed as the most promising materials for the applications of blue and green light emitting devices such as light-emitting diodes (LEDs) and laser diodes. Although the InGaN alloy can have wide range of visible wavelength by changing the In composition, it is very hard to grow high quality epilayers of In-rich InGaN because of the thermal instability as well as the large lattice and thermal mismatches. In order to avoid phase separation of InGaN, various kinds of structures of InGaN have been studied. If high-quality In-rich InGaN/GaN multiple quantum well (MQW) structures are available, it is expected to achieve highly efficient phosphor-free white LEDs. In this study, we proposed a novel InGaN double hetero-structure grown on GaN nano-pyramids to generate broad-band red-color emission with high quantum efficiency. In this work, we systematically studied the optical properties of the InGaN pyramid structures. The nano-sized hexagonal pyramid structures were grown on the n-type GaN template by metalorganic chemical vapor deposition. SiNx mask was formed on the n-type GaN template with uniformly patterned circle pattern by laser holography. GaN pyramid structures were selectively grown on the opening area of mask by lateral over-growth followed by growth of InGaN/GaN double hetero-structure. The bird's eye-view scanning electron microscope (SEM) image shows that uniform hexagonal pyramid structures are well arranged. We showed that the pyramid structures have high crystal quality and the thickness of InGaN is varied along the height of pyramids via transmission electron microscope. Because the InGaN/GaN double hetero-structure was grown on the nano-pyramid GaN and on the planar GaN, simultaneously, we investigated the comparative study of the optical properties. Photoluminescence (PL) spectra of nano-pyramid sample and planar sample measured at 10 K. Although the growth condition were exactly the same for two samples, the nano-pyramid sample have much lower energy emission centered at 615 nm, compared to 438 nm for planar sample. Moreover, nano-pyramid sample shows broad-band spectrum, which is originate from structural properties of nano-pyramid structure. To study thermal activation energy and potential fluctuation, we measured PL with changing temperature from 10 K to 300 K. We also measured PL with changing the excitation power from 48 ${\mu}W$ to 48 mW. We can discriminate the origin of the broad-band spectra from the defect-related yellow luminescence of GaN by carrying out PL excitation experiments. The nano-pyramid structure provided highly efficient broad-band red-color emission for the future applications of phosphor-free white LEDs.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2011년도 임시총회 및 하계학술연구발표회
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• pp.129-129
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• 2011

The limited understanding of the surface properties of $Pt_3Ni$ for the oxygen reduction reaction (ORR) in polymer electrolyte membrane fuel cell (PEMFC) has motivated the study of properties and electronic structures of seven layered $Pt_3Ni$ (001), (110), and (111) surfaces. The first principle method based on density functional theory (DFT) is carried out. It is found that the bulk $Pt_3Ni$ has a ferromagnetic ground state with the ordered fcc type L12 structure, which is in good agreement with other results. Non magnetic Pt has the induced magnetic moment due to the strong hybridization between 3d Ni and 5d Pt. The magnetic moment of Pt and Ni enhanced on the surface of each due to surface effect however the magnetic moment of surface Pt in the Pt-segregated Pt3Ni (111) decreased and the magnetic moment of Ni in Ni rich subsurface increased significantly. The calculated d band centers of Pt explain the possibilities for oxygen absorption and play the important roles in altering the catalytic properties. The spin polarized densities of states are presented in order to understand physical properties of Pt in different surfaces in detail.

• 한국정보통신학회논문지
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• 제21권7호
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• pp.1313-1319
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• 2017

본 논문에서는 IEEE 802.15.6 초광대역(Ultra Wide Band, UWB) 무선 인체 영역 네트워크(Wireless Body Area Networks, WBAN)에서 다중 홉 전송에 대한 성능을 평가한다. IEEE 802.15.6 UWB WBAN에 대한 물리 계층 패킷 구조와 인코딩, 디코딩 과정을 고려한다. 데이터 페이로드의 길이, 전송 전력 세기, 노드들간 거리에 따라 한 홉 전송, 두 홉 전송, 세 홉 전송에 대한 데이터 전송 성공률과 에너지 효율을 제안하고 분석한다. 시뮬레이션을 통해, 한 홉 전송, 두 홉 전송, 세 홉 전송에서 데이터 페이로드의 길이, 전송 전력 세기, 노드들간 거리의 변화에 따라 달라지는 데이터 전송 성공률과 에너지 효율에 대해 비교하고 평가한다. 최종적으로 다양한 변수와 상황에 따라 다중 홉 전송에 대한 에너지 효율을 파악하고, 에너지 효율이 가장 높은 전송 방법을 택하여 전송할 수 있음을 보인다.

• 공업화학
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• 제23권6호
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• pp.539-545
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• 2012

전자를 끌어당기는 benzotriazole을 vinylene으로 thiophene과 연결한 3-(2-benzo-triazolovinyl)thiophene (BVT)을 합성하고, FT-IR 및 $^1H$-NMR, $^{13}C$-NMR, 2D hetero-cosy spectra로 구조분석을 하였다. 합성한 BVT와 3-octylthiophene (OT)을 공중합 하였다. 공중합체들은 수평균 분자량 12000 (PDI 2.67)과 15000 (PDI 2.55)을 나타내었으며, THF, TCE와 chloroform 등의 유기용매에 잘 용해되었다. 공중합체들의 BVT와 OT의 공중합된 비율은 $^1H$-NMR spectra에 의하여 BVT : OT = 1 : 1.8과 1 : 2.8 (mol/mol)로 확인되었다. 파장 470 nm와 465 nm에서 UV-vis 최대 흡수를 나타내었고, photoluminescence (PL)는 각각 ${\lambda}_{max}$ = 662 nm와 641 nm로 나타나 적색계로 관찰되었다. 공중합체의 band gap은 각각 1.96 eV, 2.02 eV로 poly(3-octylthiophene)보다 더 증가하였다. 또한, poly(3-octylthiophene)에 비해서 HOMO 에너지 준위는 모두 낮아졌으나, LUMO 에너지 준위는 모두 높아졌다.

• 방사선산업학회지
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• 제10권1호
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• pp.1-5
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• 2016

In this study, the effect of high-energy proton irradiation on the optical properties of polyacrylonitrile (PAN) films was investigated. PAN thin films spin-coated on a substrate were irradiated 150 keV proton ions at various fluences. The changes in the chemical structure and optical properties were investigated by FT-IR and UV-vis spectroscopy. The results of the FT-IR analysis revealed that the cyclization reaction took place by proton irradiation and the degree of cyclization increased with an increasing fluence. Based on the UV-vis analysis, the optical band gap of PAN decreased from 2.84 to 2.52 eV with an increasing fluence due to the formation of carbon clusters by proton irradiation. In addition, the number of carbon atoms per carbon cluster and the number of carbon atoms per conjugation length were found to be increased with an increasing fluence.

• 한국재료학회지
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• 제23권12호
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• pp.714-721
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• 2013

A stoichiometric mixture of evaporating materials for $ZnAl_2Se_4$ single-crystal thin films was prepared in a horizontal electric furnace. These $ZnAl_2Se_4$ polycrystals had a defect chalcopyrite structure, and its lattice constants were $a_0=5.5563{\AA}$ and $c_0=10.8897{\AA}$.To obtain a single-crystal thin film, mixed $ZnAl_2Se_4$ crystal was deposited on the thoroughly etched semi-insulating GaAs(100) substrate by a hot wall epitaxy (HWE) system. The source and the substrate temperatures were $620^{\circ}C$ and $400^{\circ}C$, respectively. The crystalline structure of the single-crystal thin film was investigated by using a double crystal X-ray rocking curve and X-ray diffraction ${\omega}-2{\theta}$ scans. The carrier density and mobility of the $ZnAl_2Se_4$ single-crystal thin film were $8.23{\times}10^{16}cm^{-3}$ and $287m^2/vs$ at 293 K, respectively. To identify the band gap energy, the optical absorption spectra of the $ZnAl_2Se_4$ single-crystal thin film was investigated in the temperature region of 10-293 K. The temperature dependence of the direct optical energy gap is well presented by Varshni's relation: $E_g(T)=E_g(0)-({\alpha}T^2/T+{\beta})$. The constants of Varshni's equation had the values of $E_g(0)=3.5269eV$, ${\alpha}=2.03{\times}10^{-3}eV/K$ and ${\beta}=501.9K$ for the $ZnAl_2Se_4$ single-crystal thin film. The crystal field and the spin-orbit splitting energies for the valence band of the $ZnAl_2Se_4$ were estimated to be 109.5 meV and 124.6 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $ZnAl_2Se_4/GaAs$ epilayer. The three photocurrent peaks observed at 10 K are ascribed to the $A_1$-, $B_1$-exciton for n = 1 and $C_{21}$-exciton peaks for n = 21.

• 한국자기학회지
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• 제15권5호
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• pp.261-264
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• 2005

띠 Jahn-Teller 효과를 기반으로 $Th_{3}P_4$형 구조 화합물인 $La_{3}S_4$와 $Ce_{3}S_4$의 탄성상수 $C'=(C_{11}-C_{12})/2$의 차이점을 연구하였다. 같은 구조를 갖는 두 화합물간의 유일한 차이점은 $Ce_{3}S_4$에는 자기적인 성질을 가진 f 전자가 존재한다는 것이다. 입방 결정장에 의해 둘로 갈라져 있는 $Ce^{3+}$ 이온의 f 전자 에너지 상태가 띠 Jahn-Teller 효과에 의한 탄성유화 현상에 미치는 영향을 조사하고, f 전자가 탄성유화를 억제하는 것을 보였다. 또한, 탄성상수의 계산을 통하여 얻어진 $Ce^{3+}$ 이온의 에너지 갈라짐 값이 자기 감수율의 측정에 의해 얻어진 실험치에 근접함을 확인하였다.