Proceedings of the Korean Vacuum Society Conference
/
2015.08a
/
pp.191.2-191.2
/
2015
Details of carrier dynamics in self-assembled quantum dots (QDs) with a particular attention to nonradiative processes are not only interesting for fundamental physics, but it is also relevant to performance of optoelectronic devices and the exploitation of nanocrystals in practical applications. In general, the possible processes in such systems can be considered as radiative relaxation, carrier transfer between dots of different dimensions, Auger nonradiactive scattering, thermal escape from the dot, and trapping in surface and/or defects states. Authors of recent studies have proposed a mechanism for the carrier dynamics of time-resolved photoluminescence CdTe (a type II-VI QDs) systems. This mechanism involves the activation of phonons mediated by electron-phonon interactions. Confinement of both electrons and holes is strongly dependent on the thermal escape process, which can include multi-longitudinal optical phonon absorption resulting from carriers trapped in QD surface defects. Furthermore, the discrete quantized energies in the QD density of states (1S, 2S, 1P, etc.) arise mainly from ${\delta}$-functions in the QDs, which are related to different orbitals. Multiple discrete transitions between well separated energy states may play a critical role in carrier dynamics at low temperature when the thermal escape processes is not available. The decay time in QD structures slightly increases with temperature due to the redistribution of the QDs into discrete levels. Among II-VI QDs, wide-gap CdZnTe QD structures characterized by large excitonic binding energies are of great interest because of their potential use in optoelectronic devices that operate in the green spectral range. Furthermore, CdZnTe layers have emerged as excellent candidates for possible fabrication of ferroelectric non-volatile flash memory. In this study, we investigated the optical properties of CdZnTe/ZnTe QDs on Si substrate grown using molecular beam epitaxy. Time-resolved and temperature-dependent PL measurements were carried out in order to investigate the temperature-dependent carrier dynamics and the activation energy of CdZnTe/ZnTe QDs on Si substrate.
Proceedings of the Korea Association of Crystal Growth Conference
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1996.06a
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pp.5-18
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1996
The solid state cesium ion source os alumino-silicate based zeolite which contains cerium. The material is an ionic conductor. Cesiums are stably stored in the material and one can extract the cesiums by applying electric field across the electrolyte. Cesium ion bombardment has the unique property of producing high negative ion yield. This ion source is used as the primary source for the production of a negative ion without any gas discharge or the need for a carrier gas. The deposition of materials as an ionic species in the energy range of 1.0 to 300eV is recently recognized as a very promising new thin film technique. This energetic non-thermal equilibrium deposition process produces films by “Kinetic Bonding / Energetic Condensation" mechansim not governed by the common place thermo-mechanical reaction. Under these highly non-equilibrium conditions meta-stable materials are realized and the negative ion is considered to be an optimum paeticle or tool for the purpose. This process differs fundamentally from the conventional ion beam assisted deposition (IBAD) technique such that the ion beam energy transfer to the deposition process is directly coupled the process. Since cesium ion beam sputter deposition process is forming materials with high kinetic energy of metal ion beams, the process provider following unique advantages:(1) to synthesize non thermal-equilibrium materials, (2) to form materials at lower processing temperature than used for conventional chemical of physical vapor deposition, (3) to deposit very uniform, dense, and good adhesive films (4) to make higher doposition rate, (5) to control the ion flux and ion energy independently. Solid state cesium ion beam sputter deposition system has been developed. This source is capable of producing variety of metal ion beams such as C, Si, W, Ta, Mo, Al, Au, Ag, Cr etc. Using this deposition system, several researches have been performed. (1) To produce superior quality amorphous diamond films (2) to produce carbon nitirde hard coatings(Carbon nitride is a new material whose hardness is comparable to the diamond and also has a very high thermal stability.) (3) to produce cesiated amorphous diamond thin film coated Si surface exhibiting negative electron affinity characteristics. In this presentation, the principles of solid state cesium ion beam sputter deposition and several applications of negative metal ion source will be introduced.
Some new nanohybrid materials have been synthesized by intercalating the oxotitanium(IV) meso-tetrakis(4- sulfonatophenyl) porphyrin$(O=Ti^{(IV)} TSPP)$ into the Zn/Al layered double hydroxides (LDHs), and their structures and photophysical properties have been investigated by various laser spectroscopic techniques. According to the XRD pattern of the synthesized nanohybrid materials, the macrocycle plane of $O=Ti^{(IV)}$ TSPP are grafted perpendicular to the LDH layers. The $O=Ti^{(IV)}$ TSPP-intercalated LDH exhibits band broadening of the absorption spectrum and a blue shift of Q-band as compared to that observed in solution. Resonance Raman spectral measurements demonstrate that the positively charged LDHs give rise to a slight decrease of the electronic density of the porphyrin ring accompanying a small change of the electronic distribution of the $O=Ti^{(IV)}$ TSPP. Consequently the LDH environment affects the energies of the two highest occupied molecular orbitals (HOMOs) of the $O=Ti^{(IV)}$) TSPP, $a_{1u}$ and $a_{2u}$, producing a mixed orbital character. Being consistent with these electronic structural changes of $O=Ti^{(IV)}$ TSPP in LDH, both the fluorescence spectral change and the fsdiffuse reflectance transient measurements imply that the photoexcitation of the $O=Ti^{(IV)}$ TSPP intercalated into LDH undergoes fast relaxation to the O=Ti(IV) $TSPP^+-LDH^- $charge transfer (CT) state within a few picoseconds, followed by a photoinduced electron transfer between the O=Ti(IV) TSPP and LDHs with a rate constant greater than %1×10^{10}S^{-1}$. No evidence is found for back electron transfer. In conclusion, the $O=Ti^{(IV)}$ TSPP intercalated LDH seems to be a possible candidate for an artificial reaction center for an efficient solar energy conversion system.
Cytochrome-c-oxidase in mitochondria membrane is one of the most important factors for energy generation in the cell. As well as it is electron transfer enzyme, it is also heavily related to the apoptosis and other pathologic conditions. Meanwhile, porin is a protein located in inner and outer membranes of mitochondria, which is assumed to be functionally correlated with cytochrome-c-oxidase. It functions as forming electron transfer chain and conveying ATP. Therefore, using the immune-microscopy, It compared the distribution of cytochrome-c-oxidase and porin to figure out the formation and changes on cytochrome-c-oxidase in mitochondrial cristae. The sarcroplasm of cardic muscle tissue has many mitochondria. They are classified into two groups: the mitochondria with many cytochrome-c-oxidase and the mitochondria with only porins. The mitochondria with porins had few cytochrome-c-oxidases in their membrane; in contrast, the other mitochondria with rich cytochrome-c-oxidase had few porins in their walls. In addition, according to the location of the tissue in bovine heart, distribution of those kind of mitochondria had been clearly separated. As a result, it could be assumed that immature mitochondria has many porins to transfer the protein materials from sarcroplasm through the porins, and they made cytochrome-c-oxidase until it is enough, and then they decreased the porin and maintained minimum number of the porin.
The word of lignin is derived from the Latin word 'ligum' meaning wood. Lignin is complex polymer consisting of coniferyl alcohol, sinapyl alcohol and p-coumaryl alcohol unit and has an amorphous, three dimensional network structure which is hard to be hydrolyzed by acid. Lignin is found in the cell wall of plants lignified. The mode of polymerization of these alcohols in the cell wall lead to a heterogeneous branched and cross-linked polymer in which phenyl propane units are linked by carbon-carbon and carbon-oxygen bonds. This polymerization of precursors, p-coumaryl alcohol, coniferyl alcohol and sinapyl alcohol to lignin is formed by enzymic dehydrolyzation. The reaction is initiated by an electron transfer which results in the formation of resonance-stabilized phenoxy radical. The combination of these radicals produces a variety of dimers, trimers and oligomers and so on. Lignin research has been divided into basic and practical application field. The basic studies contains biosynthesis, chemical structure, distribution in the cell wall and reactivity by reductants, oxidants and organic solvents. The application research will be approached the reaction of lignin in various pulp making involving pulp bleaching and its effect on pulp qualities. Lignin also will be studied for the production of fine chemicals, polymer products and the conservation into an energy source like petroleum oil because the amount of lignin produced in pulp making process is more than 51,000,000 tons per year in the world. Both basic and application research must lay emphasis on the development for the utilization of lignin and the pulping process. But these researches can not be completed without understanding lignin structure containing functional groups. Therefore, this paper was focused on the review of lignin formulation which has been studied since 1948 in chronological order. This review was based on monomers, dimers, trimers and tetramers of phenyl propane unit structures which were isolated and identified by different methods from various wood.ious wood.
Proceedings of the Korean Vacuum Society Conference
/
2014.02a
/
pp.114.1-114.1
/
2014
Copper is considered to be the most promising substrate for the growth of high-quality and large area graphene by chemical vapor deposition (CVD), in particular, on the (111) facet. Because the interactions between graphene and Cu substrates influence the orientation, quality, and properties of the synthesized graphene, we studied the interactions using angle-resolved photoemission spectroscopy. The evolution of both the Shockley surface state of the Cu(111) and the p band of the graphene was measured from the initial stage of CVD growth to the formation of a monolayer. Graphene growth was initiated along the Cu(111) lattice, where the Dirac band crossed the Fermi energy ($E_F$) at the K point without hybridization with the d-band of Cu. Then two rotated domains were additionally grown as the area covered with graphene became wider. The Dirac energy was about 0.4 eV and the energy of the Shockley surface state of Cu(111) shifted toward the $E_F$) by 0.15 eV upon graphene formation. These results indicate weak interactions between graphene and Cu, and that the electron transfer is limited to that between the Shockley surface state of Cu(111) and the p band of graphene. This weak interaction and slight lattice mismatch between graphene and Cu resulted in the growth of rotated graphene domains ($9.6^{\circ}$ and $8.4^{\circ}$), which showed no significant differences in the Dirac band with respect to different orientations. These rotated graphene domains resulted in grain boundaries which would hinder a large-sized single monolayer growth on Cu substrates.
The chemical behavior of the trivalent lanthanide$(Pr^{3+}, Eu^{3+}, Gd^{3+} 그리고 Yb^{3+})$complexes with organo-ligand (2,2,6,6-tetramethyl-3,5-heptanedione) has been investigated by the use of UV/Vis-spectrophotometric, magnetics, and electrochemical method. The two or three energy absorption bands are observed by the spectra of these complexes. The magnetitude of crystal field splitting energy, the spin pairing energy and bond stength was obtained from the spectra of the complexes. These are found to be localization, low-spin (or high-spin state, and strong bonding strength. The magnetic dipole moment are found to be diamagnetic complexes (or paramagnetic). The electrochemical behavior of complexes was observed by the use of cyclic voltammetry in aprotic media. These reduction peaks were irreversible two and three step reduction processes by electron transfer.
Proceedings of the Korean Vacuum Society Conference
/
2013.08a
/
pp.146.2-146.2
/
2013
Copper is considered to be the most promising substrate for the growth of high-quality and large area graphene by chemical vapor deposition (CVD), in particular, on the (111) facet. Because the interactions between graphene and Cu substrates influence the orientation, quality, and properties of the synthesized graphene, we studied the interactions using angle-resolved photoemission spectroscopy. The evolution of both the Shockley surface state of the Cu(111) and the ${\pi}$ band of the graphene was measured from the initial stage of CVD growth to the formation of a monolayer. Graphene growth was initiated along the Cu(111) lattice, where the Dirac band crossed the Fermi energy (EF) at the K point without hybridization with the d-band of Cu. Then two rotated domains were additionally grown as the area covered with graphene became wider. The Dirac energy was about -0.4 eV and the energy of the Shockley surface state of Cu(111) shifted toward the EF by ~0.15 eV upon graphene formation. These results indicate weak interactions between graphene and Cu, and the electron transfer is limited to that between the Shockley surface state of Cu(111) and the ${\pi}$ band of graphene. This weak interaction and slight lattice mismatch between graphene and Cu resulted in the growth of rotated graphene domains ($9.6^{\circ}$ and $8.4^{\circ}$), which showed no significant differences in the Dirac band with respect to different orientations. These rotated graphene domains resulted in grain boundaries which would hinder a large-sized single monolayer growth on Cu substrates.
The removal of 2,4-dichlorophenoxyacetic acid (2,4-D) in aqueous solution by coupled electro-oxidation and Fe(II) activated persulfate oxidation process was investigated. The electrochemical oxidation was performed using carbon sheet electrode and persulfate using Fe(II) ion as an activator. The oxidation efficiency was investigated by varying current density (2 - 10 mA/㎠), electrolyte (Na2SO4) concentration (10 - 100 mM), persulfate concentration (5 - 20 mM), and Fe(II) concentration (10 - 20 mM). The 2,4-D removal efficiency was in the order of Fe(II) activated persulfate-assisted electrochemical oxidation (Fe(II)/PS/ECO, 91%) > persulfate-electrochemical oxidation (PS/ECO, 51%) > electro-oxidation (EO, 36%). The persulfate can be activated by electron transfer in PS/ECO system, however, the addition of Fe(II) as an activator enhanced 2,4-D degradation in the Fe(II)/PS/ECO system. The 2,4-D removal efficiency was not affected by the initial pHs (3 - 9). The presence of anions (Cl- and HCO3-) inhibited the 2,4-D removal in Fe(II)/PS/ECO system due to scavenging of sulfate radical. Scavenger experiment using tert-butyl alcohol (TBA) and methanol (MeOH) confirmed that although both sulfate (SO4•-) and hydroxyl (•OH) radicals existed in Fe(II)/PS/ECO system, hydroxyl radical (SO4•-) was the predominant radical.
Journal of the Korean Graphic Arts Communication Society
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v.22
no.2
/
pp.179-198
/
2004
Organic electroluminescent devices are light-emitting diodes in which the active materials consist entirely of organic materials. Recently, many fluorescent organic materials have been reported and the study on synthesis and application of new organic light-emitting materials has been demanded. This paper reports the optical and electrical characteristics of OLEDs using novel polymers containing biphenyl structure. First, Optical properties of novel light-emitting biphenyl derivatives doped with poly(9-vinyl carbazole)(PVK) and emitted blue, bluish green color, which is attributed to the overlap area between PL spectrum of host(PVK) and absorption spectra of guests(polymer). This is correspondent with F$\"{o}$rster energy transfer process in the blends. And, OLED devices were fabricated using poly (3,4-ethylenedioxy thiophene) (PEDOT) as a hole injection material and tris-(8-hydroxyquinoline) aluminum ($Alq_3$) as an electron transporting material. EL devices fabricated as ITO/PEDOT/PVK doped with biphenyl derivatives/$Alq_3$/Li:Al and I-V-L chatacteristics and emitting efficiency of EL devices were examined. Finally, the drift mobility of PVK doped with biphenyl derivatives and $Alq_3$ were measured by TOF technique varying applied electric field. EL efficiency was increased as the ratio of hole mobility of PVK doped with biphenyl derivatives and electron mobility of $Alq_3$ was close to one.
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