• 한국조명전기설비학회:학술대회논문집
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• 한국조명전기설비학회 2008년도 춘계학술대회 논문집
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• pp.151-154
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• 2008

The field emission lamps have the advantages to their cold cathode-characteristic and the eco-friendly, We realized that the dual emitter system showed very simple structure which gate and cathode electrodes are formed on the same glass surface. In this paper, we reported the properties of dual emitters depended on variation of gate width and spacing for optimum panel structure. In combination of dual emitter structure and bi-polar driving, electron beam spreads more than normal gate structure or diode structure, and emission uniformity increased in dual emitter structure at 5"-diagonal.

• 한국정보통신학회:학술대회논문집
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• 한국정보통신학회 2013년도 춘계학술대회
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• pp.329-331
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• 2013

IEEE 802.11은 무선 네트워크에서 주된 기술로 자리를 잡고있다. 하지만 공평성 문제가 에드 � 네트워크 상에서 발생한다. 두 개의 독립적인 송신 노드들이 매체를 독점하여 사용함으로써 중간의 다른 노드가 패킷을 전송하는 것을 막는 현상까지 발생한다. 본 논문에서는 T-MAC에서 발생할 수 있는 불공정 대역폭 분배 문제를 해결하기 위해 (m,k)-firm 기법을 사용한 가변적으로 변할 수 있는 TA 시간 적용 기법을 제시한다. 시뮬레이션 결과 자신이 트래픽을 전송할 기회를 가질 확률이 기존 기법보다 증가되는 것을 볼 수 있다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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• pp.685-688
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• 2002

In this paper, it is reported that the anode current changes at the constantly applied gate voltages and the current-voltage (I-V) characteristics of Si, Co silicide and Mo silicide field emitter arrays (FEAs) depending on vacuum level from a $10^{-9}$ torr to a $10^{-6}$ torr. The mechanism of the robustness of anode current degradation of Mo silicide FEAs under poor vacuum conditions can be explained by the model of tolerance for the oxygen adsorption and oxidation at the silicide surface. Also, we present the changes of emitting area and work function of the emitters according to vacuum level.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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• pp.681-684
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• 2002

To investigate thermal effects of silicon field emitter, we fabricated and characterized single silicon tips with various tip radii, which generate different joule heating. Through I-V and stability tests, the changes of emission characteristics and tip structures due to different tip heating were observed and discussed. From the results, we confirmed that the changes of emission characteristics due to thermal effects in silicon emitter could occur at relatively small emission currents and concluded that the thermal effects should be also considered under normal operation condition above 1 ${\mu}A$.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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• pp.651-654
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• 2002

We carried out 2-dimensional numerical calculations of electrostatic potential for triode field emitters with planar cathodes using the finite element method. As it turned out, the conventional triode structure with a planar cathode suffered from large gate current and wide spreading of emitted electrons. To circumvent these shortcomings, we proposed a new triode structure. By simply inserting a conducting layer of proper thickness on top of the cathode layer, we were able to modify the electric field distribution on the cathode surface so that low gate current and electron-focusing effect were achieved, simultaneously.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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• pp.1020-1023
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• 2002

We successfully developed a-Si TFT controlled active matrix cathode (AMC) with gated Mo emitters. Also, we could remove emitter failures of the AMC through a novel surface treatment of Mo-tips, which indicates reduction of $MoO_3$ or chemical wet etching of $MoO_3$ by surface treatment. Transient behaviors of the AMC are strongly dependent on not only DC characteristics of device but also the device structure. Brightness and gray scale were well realized by low-voltage scan and data signals addressed to a-Si TFTs.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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• pp.305-308
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• 2002

Field emission from single-walled carbon nanotubes (SWNTs) aligned on a patterned gold surface is reported. The SWNTs emitters were prepared at room temperature by a self-assembly monolayer technique. SWNTs were cut into sub-micron length by sonication in an acidic solution. Cut SWNTs were attached on the gold surface by the reaction between the thiol groups and the gold surface. The field emission measurement showed that the turn-on field was 4.8 $V/{\mu}m$ at the emission current density of 10 ${\mu}A/cm^2$. The current density was 0.5 $mA/cm^2$ at 6.6 $V/{\mu}m$. This approach provides a novel route for fabricating CNT-based field emission displays.

• Journal of Korean Vacuum Science & Technology
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• 제3권1호
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• pp.30-32
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• 1999

Electron beam trajectory simulation results on the high voltage FED with cone-type field emitters predict that the cross-talk phenomena would be seen due to the divergence of the electron beam. In this study, computer simulations with design of experiment technique and the SNU-FEAT program were carried out for five input parameters of the aperture focusing structure. The results tell that the focusing voltage is a dominant factor. And, the beam divergence index could be reduced to 10.7$\mu\textrm{m}$ with the aperture focusing structure, however, the operating voltage of the field emitter is predicted to increase by 40% maximum.

• 천문학회지
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• 제36권4호
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• pp.283-283
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• 2003

The first sentence in the second paragraph of INTRODUCTION, 'The first discovery of a galaxy beyond z=5 was reported by Weymann et al. (1998); HDF 4-470.3 at z=5.60.' should be read as 'The first discovery of a galaxy beyond z=5 was reported by Dey et al. (1998); 0140+326 RD1 at z=5.34'. The authors sincerely regret this error.

• 반도체디스플레이기술학회지
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• 제11권1호
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• pp.61-65
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• 2012

In this study, for use of carbon nanotubes (CNTs) as a cold cathode of x-ray tubes, we examine the effects of selective growth of CNTs on their field emission properties and long-term stability. The selective growth of CNTs was performed by selectively etching the catalyst layer which was used for CNTs' nucleation. CNTs were grown on conical-type tungsten substrates using an inductively-coupled plasma chemical vapor deposition system. For all the grown CNTs, their morphologies and microstructures were analyzed by field-emission scanning electron microscope and Raman spectroscopy. The electron-emission properties of CNTs and the long-term stability of emission currents were measured and characterized according to the CNTs' growth position on the substrate.